Hydrogen response to high-density dislocations in bulk perovskite oxide SrTiO3
Authors:
Xufei Fang,
Lars Dörrer,
Svetlana Korneychuk,
Maria Vrellou,
Alexander Welle,
Stefan Wagner,
Astrid Pundt,
Harald Schmidt,
Christoph Kirchlechner
Abstract:
Hydrogen plays an increasingly important role in green energy technologies. For instance, proton-conducting oxides with high performance for fuel cell components or electrolysers need to be developed. However, this requires a fundamental understanding of hydrogen-defects interactions. While point defects and grain boundaries in oxides have been extensively studied, the role of dislocations as line…
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Hydrogen plays an increasingly important role in green energy technologies. For instance, proton-conducting oxides with high performance for fuel cell components or electrolysers need to be developed. However, this requires a fundamental understanding of hydrogen-defects interactions. While point defects and grain boundaries in oxides have been extensively studied, the role of dislocations as line defects remains less understood, primarily due to the challenge for effective dislocation engineering in brittle oxides. In this work, we demonstrate the impact of dislocations in bulk single-crystal perovskite oxide SrTiO3 on hydrogen uptake and diffusion using deuterium as tracer. Dislocations with a high density up to ~10 to the power of 14 per square meter were mechanically introduced at room temperature. Exposing this dislocation-rich and the reference regions (with a dislocation density of ~10 to the power of 10 per square meter) to deuterium at 400 °C for 1h, followed by secondary ion mass spectrometry measurements, we observed a ~100 times increase in deuterium incorporation in the dislocation-rich region. The result suggests that dislocations in oxides can act as an effective reservoir for deuterium. This proof-of-concept brings new insights into the emerging hydrogen-dislocation interactions in functional oxides.
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Submitted 14 June, 2025;
originally announced June 2025.
High quality superconducting tantalum resonators with beta phase defects
Authors:
Ritika Dhundhwal,
Haoran Duan,
Lucas Brauch,
Soroush Arabi,
Dirk Fuchs,
Amir-Abbas Haghighirad,
Alexander Welle,
Florentine Scharwaechter,
Sudip Pal,
Marc Scheffler,
José Palomo,
Zaki Leghtas,
Anil Murani,
Horst Hahn,
Jasmin Aghassi-Hagmann,
Christian Kübel,
Wulf Wulfhekel,
Ioan M. Pop,
Thomas Reisinger
Abstract:
For practical superconducting quantum processors, orders of magnitude improvement in coherence is required, motivating efforts to optimize hardware design and explore new materials. Among the latter, the coherence of superconducting transmon qubits has been shown to improve by forming the qubit capacitor pads from $α$-tantalum, avoiding the meta-stable $β$-phase that forms when depositing tantalum…
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For practical superconducting quantum processors, orders of magnitude improvement in coherence is required, motivating efforts to optimize hardware design and explore new materials. Among the latter, the coherence of superconducting transmon qubits has been shown to improve by forming the qubit capacitor pads from $α$-tantalum, avoiding the meta-stable $β$-phase that forms when depositing tantalum at room temperature, and has been previously identified to be a source of microwave losses. In this work, we show lumped element resonators containing $β$-phase tantalum in the form of inclusions near the metal-substrate interface with internal quality factors ($Q_\text{i}$) up to $(5.0 \pm 2.5) \times 10^6$ in the single photon regime. They outperform resonators with no sign of the $β$-phase in x-ray diffraction and thermal quasi-particle loss. Our results indicate that small concentrations of $β$-phase can be beneficial, enhancing critical magnetic fields and potentially, for improving coherence in tantalum based superconducting circuits.
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Submitted 24 February, 2025;
originally announced February 2025.
