Showing 1–50 of 120 results for author: Wei, S

Emergent Multiferroic Altermagnets and Spin Control via Noncollinear Molecular Polarization

Authors: Ziye Zhu, Yuntian Liu, Xunkai Duan, Jiayong Zhang, Bowen Hao, Su-Huai Wei, Igor Zutic, Tong Zhou

Abstract: Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectricity with altermagnetism to enable magnetoelectric coupling and electric control of spin has drawn significant attention. However, its experimental realization and precise spin manipulation remain elusive. Here, by focu… ▽ More Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectricity with altermagnetism to enable magnetoelectric coupling and electric control of spin has drawn significant attention. However, its experimental realization and precise spin manipulation remain elusive. Here, by focusing on molecular ferroelectrics, the first discovered ferroelectrics renowned for their highly controllable molecular polarizations and structural flexibility, we reveal that these obstacles can be removed by an emergent multiferroic altermagnets with tunable spin polarization in a large class of fabricated organic materials. Using a symmetry-based design and a tight-binding model, we uncover the underlying mechanism of such molecular ferroelectric altermagnets and demonstrate how noncollinear molecular polarization can switch the spin polarization on and off and even reverse its sign. From the first-principles calculations, we verify the feasibility of these materials in a series of well-established hybrid organic-inorganic perovskites and metal-organic frameworks. Our findings bridge molecular ferroelectrics and altermagnetic spintronics, highlighting an unexplored potential of multifunctional organic multiferroics. △ Less

Submitted 9 July, 2025; originally announced July 2025.

Comments: 7 pages, 4 figures

Bipolar doping in van der Waals semiconductor through Flexo-doping

Authors: Bo Zhang, Hui Xia, Zhengdong Huang, Yaqian Liu, Jun Kang, Liaoxin Sun, Tianxin Li, Su-Huai Wei, Wei Lu

Abstract: Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here, we demonstrate a physical doping technique to directly write nanoscale doping patterns into layered semiconductors (MoS2). By applying localized tensile and com… ▽ More Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here, we demonstrate a physical doping technique to directly write nanoscale doping patterns into layered semiconductors (MoS2). By applying localized tensile and compressive stress via an atomic force microscopy probe, p and n type conductance are simultaneously written into the designed area with sub-100-nm resolution, as verified by spatially resolved capacitance and photocurrent experiments. Density functional theory calculations reveal strain-driven shifts of donor and acceptor levels, as large as several hundreds of meV, linking mechanical stress to semiconductor doping. Fabricated strain-engineered junction efficiently rectifies the current flow and performs logic operations with stable dynamic response. This strain-driven approach enables spatially precise doping in van der Waals materials without degrading crystallinity, offering a versatile platform for nanoscale semiconductor devices. △ Less

Submitted 9 May, 2025; originally announced May 2025.

From Continuous to First-Order-Like: Amorphous-to-Amorphous Transition in Phase-Change Materials

Authors: Tomoki Fujita, Yoshio Kono, Yuhan Chen, Jens Moesgaard, Seiya Takahashi, Arune Makareviciute, Sho Kakizawa, Davide Campi, Marco Bernasconi, Koji Ohara, Ichiro Inoue, Yujiro Hayashi, Makina Yabashi, Eiji Nishibori, Riccardo Mazzarello, Shuai Wei

Abstract: Polymorphism is ubiquitous in crystalline solids. Amorphous solids, such as glassy water and silicon, may undergo amorphous-to-amorphous transitions (AATs). The nature of AATs remains ambiguous, due to diverse system-dependent behaviors and experimental challenges to characterize disordered structures. Here, we identify two ordered motifs in amorphous phase-change materials and monitor their inter… ▽ More Polymorphism is ubiquitous in crystalline solids. Amorphous solids, such as glassy water and silicon, may undergo amorphous-to-amorphous transitions (AATs). The nature of AATs remains ambiguous, due to diverse system-dependent behaviors and experimental challenges to characterize disordered structures. Here, we identify two ordered motifs in amorphous phase-change materials and monitor their interplay upon pressure-induced AATs. Tuning temperature, we find a crossover from continuous to first-order-like AATs. The crossover emerges at a special pressure-temperature combination, where the AAT encounters a maximum in crystallization rate. Analyzing the two ordered motifs in a two-state model, we draw a phenomenological parallel to the phase transition behavior of supercooled water near its second critical point. This analogy raises an intriguing question regarding the existence of a critical-like point within amorphous solids. △ Less

Submitted 9 April, 2025; originally announced April 2025.

Large deviations of density fluctuations in the boundary driven Quantum Symmetric Simple Inclusion Process

Authors: Denis Bernard, Tony Jin, Stefano Scopa, Shiyi Wei

Abstract: We consider the boundary driven Quantum Symmetric Simple Inclusion Process (QSSIP) which describes a one-dimensional system of bosonic particles with stochastic nearest-neighbor hopping, modeled as a Brownian motion, with gain/loss processes at the endpoints of the chain driving the system out-of-equilibrium. Although the averaged QSSIP dynamics differs from that of the Quantum Symmetric Simple Ex… ▽ More We consider the boundary driven Quantum Symmetric Simple Inclusion Process (QSSIP) which describes a one-dimensional system of bosonic particles with stochastic nearest-neighbor hopping, modeled as a Brownian motion, with gain/loss processes at the endpoints of the chain driving the system out-of-equilibrium. Although the averaged QSSIP dynamics differs from that of the Quantum Symmetric Simple Exclusion Process (QSSEP) - the analogous system where bosons are replaced by fermions - we show that, paradoxically, the dynamics of their matrices of two-point functions, along with all their fluctuations, coincide. In contrary, the underlying classical models differs significantly, as the bosonic statistics allow the inclusion of multiple particles at the same site, in contrast to (symmetric) simple exclusion processes (SSEP). We provide an exact derivation of the large deviation function of density fluctuations in QSSIP and, as a consequence, in the classical inclusion process (SSIP) by exploiting its quantum formulation. Remarkably, our study highlights that, both in QSSEP and QSSIP, fluctuations of the local densities are typically classical, i.e. the cumulant generating functions of the local densities are asymptotically self-averaging and converge toward those of the classical SSEP and SSIP, realization-wise. This provides a test of the conjectured almost sure classical behavior of transport fluctuations, at leading order in the system size, in noisy diffusive quantum many-body systems. △ Less

Submitted 24 March, 2025; originally announced March 2025.

Comments: 11 pages, 2 figures

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Authors: Shanshan Wang, Menglin Huang, Su-Huai Wei, Xin-Gao Gong, Shiyou Chen

Abstract: The ABC model has been widely used to describe the carrier recombination rate, in which the rate of non-radiative recombination assisted by deep-level defects is assumed to depend linearly on excess carrier density $Δn$, leading to a constant recombination coefficient A. However, for multi-level defects that are prevalent in semiconductors, we demonstrate here that the rate should depend nonlinear… ▽ More The ABC model has been widely used to describe the carrier recombination rate, in which the rate of non-radiative recombination assisted by deep-level defects is assumed to depend linearly on excess carrier density $Δn$, leading to a constant recombination coefficient A. However, for multi-level defects that are prevalent in semiconductors, we demonstrate here that the rate should depend nonlinearly on $Δn$. When $Δn$ varies, the carrier capture and emission of defects can change the defect density distribution in different charge states, which can further change the carrier capture and emission rates of the defects and thus make the recombination rate depend non-linearly on $Δn$, leading to an $A(n)$ function. However, in many recent calculation studies on carrier recombination rate of multi-level defects, only carrier capture was considered while carrier emission from defect levels was neglected, causing incorrect charge-state distribution and misleading linear dependence of the rate on $Δn$. For $\text{V}_{\text{Ga}}$-$\text{O}_{\text{N}}$ in GaN and $\text{Pb}_\text{I}$ in CsPbI$_3$, our calculations showed that neglecting the carrier emission can cause the recombination rate underestimation by more than 8 orders of magnitude when $Δn$ is $10^{15}$ cm$^{-3}$. Our findings suggest that the recent studies on carrier recombination assisted by multi-level defects should be revisited with carrier emission considered, and the widely-used $ABC$ model should be reformed into the $A(n)BC$ model. △ Less

Submitted 24 February, 2025; originally announced February 2025.

PICTS: A Novel Deep Reinforcement Learning Approach for Dynamic P-I Control in Scanning Probe Microscopy

Authors: Ziwei Wei, Shuming Wei, Qibin Zeng, Wanheng Lu, Huajun Liu, Kaiyang Zeng

Abstract: We have developed a Parallel Integrated Control and Training System, leveraging the deep reinforcement learning to dynamically adjust the control strategies in real time for scanning probe microscopy techniques. We have developed a Parallel Integrated Control and Training System, leveraging the deep reinforcement learning to dynamically adjust the control strategies in real time for scanning probe microscopy techniques. △ Less

Submitted 11 February, 2025; originally announced February 2025.

Comments: 21 pages, 6 figures

Universality of percolation at dynamic pseudocritical point

Authors: Qiyuan Shi, Shuo Wei, Youjin Deng, Ming Li

Abstract: Universality, encompassing critical exponents, scaling functions, and dimensionless quantities, is fundamental to phase transition theory. In finite systems, universal behaviors are also expected to emerge at the pseudocritical point. Focusing on two-dimensional percolation, we show that the size distribution of the largest cluster asymptotically approaches to a Gumbel form in the subcritical phas… ▽ More Universality, encompassing critical exponents, scaling functions, and dimensionless quantities, is fundamental to phase transition theory. In finite systems, universal behaviors are also expected to emerge at the pseudocritical point. Focusing on two-dimensional percolation, we show that the size distribution of the largest cluster asymptotically approaches to a Gumbel form in the subcritical phase, a Gaussian form in the supercritical phase, and transitions within the critical finite-size scaling window. Numerical results indicate that, at consistently defined pseudocritical points, this distribution exhibits a universal form across various lattices and percolation models (bond or site), within error bars, yet differs from the distribution at the critical point. The critical polynomial, universally zero for two-dimensional percolation at the critical point, becomes nonzero at pseudocritical points. Nevertheless, numerical evidence suggests that the critical polynomial, along with other dimensionless quantities such as wrapping probabilities and Binder cumulants, assumes fixed values at the pseudocritical point that are independent of the percolation type (bond or site) but vary with lattice structures. These findings imply that while strict universality breaks down at the pseudocritical point, certain extreme-value statistics and dimensionless quantities exhibit quasi-universality, revealing a subtle connection between scaling behaviors at critical and pseudocritical points. △ Less

Submitted 23 April, 2025; v1 submitted 3 February, 2025; originally announced February 2025.

Journal ref: Chinese Phys. B 34 040501(2025)

Is p-type doping in TeO2 feasible?

Authors: Zewen Xiao, Chen Qiu, Su-Huai Wei, Hideo Hosono

Abstract: Wide-bandgap two-dimensional (2D) beta-TeO2 has been reported as a high-mobility p-type transparent semiconductor (Nat. Electron. 2021, 4, 277-283), attracting significant attention. This "breakthrough" not only challenges the conventional characterization of TeO2 as an insulator but also conflicts with the anticipated difficulty in hole doping of TeO2 by established chemical trends. Notably, the… ▽ More Wide-bandgap two-dimensional (2D) beta-TeO2 has been reported as a high-mobility p-type transparent semiconductor (Nat. Electron. 2021, 4, 277-283), attracting significant attention. This "breakthrough" not only challenges the conventional characterization of TeO2 as an insulator but also conflicts with the anticipated difficulty in hole doping of TeO2 by established chemical trends. Notably, the reported Fermi level of 0.9 eV above the valence band maximum (VBM) actually suggests that the material is an insulator, contradicting the high hole density obtained by Hall effect measurement. Furthermore, the detected residual Se and the possible reduced elemental Te in the 2D beta-TeO2 samples introduces complexity, considering that elemental Se, Te, and Te1-xSex themselves are high-mobility p-type semiconductor. Therefore, doubts regarding the true cause of the p-type conductivity observed in the 2D beta-TeO2 samples arise. In this work, we employ density functional theory calculations to illustrate that TeO2, whether in its bulk forms of alpha-, beta-, or gamma-TeO2, or in 2D beta-TeO2, inherently exhibits insulating properties and poses challenges in carrier doping due to its shallow conduction band minimum and deep valence band maximum (VBM). Our findings shed light on the insulating electrical properties and doping difficulty of TeO2, contrasting with the claimed p-type conductivity in the 2D beta-TeO2 samples, prompting inquiries into the true origin of the p-type conductivity. △ Less

Submitted 29 November, 2024; originally announced December 2024.

Journal ref: Chin. Phys. Lett. 42, 016103 (2025)

Mechanism of $E'_γ$ Defect Generation in Ionizing-irradiated $a$-SiO$_2$: The Nonradiative Carrier Capture-Structural Relaxation Model

Authors: Yu Song, Chen Qiu, Su-Huai Wei

Abstract: The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E'_γ$ defects in the $a$-SiO$_2$ dielectrics, but the conventional ``hole transport-trapping'' model of defect generation fails to explain recent basic experiments. Here, we propose an essentially new ``nonradiative carrier capture-structural relaxation'' (NCCSR) mechanism that can consistently explain the… ▽ More The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E'_γ$ defects in the $a$-SiO$_2$ dielectrics, but the conventional ``hole transport-trapping'' model of defect generation fails to explain recent basic experiments. Here, we propose an essentially new ``nonradiative carrier capture-structural relaxation'' (NCCSR) mechanism that can consistently explain the puzzling temperature/electric-field dependence, based on spin-polarized HSE06 hybrid functional calculations and existing experimental alignment of defect formation energies and charge capture cross-sections of large-sample oxygen vacancies in $a$-SiO$_2$. It is revealed that, the long-assumed $V_{Oγ}$ precursors with high formation energy cannot survive in high temperature-grown $a$-SiO$_2$; whereas the stable $V_{Oδ}$ can capture irradiation-induced holes via strong electron-phonon coupling, generating metastable $E'_δ$ that most relax into stable $E'_γ$. A fractional power-law (FPL) dynamic model is derived based on the mechanism and the Kohlrausch-Williams Watts (KWW) decay function. It can uniformly describe nonlinear data over a wide dose and temperature range. This work not only provides a solid cornerstone for prediction and hardening of TID effects of SiO$_2$-based semiconductor devices, but also offers a general approach for studying ionizing radiation physics in alternative dielectrics with intrinsic electronic metastability and dispersion. △ Less

Submitted 4 June, 2025; v1 submitted 15 October, 2024; originally announced October 2024.

Comments: 5 pages, 3 figures in the main text; 4 figures, 2 tables in the appendix

Segregation at prior austenite grain boundaries: the competition between boron and hydrogen

Authors: Guillaume Hachet, Ali Tehranchi, Hao Shi, Manoj Prabhakar, Shaolou Wei, Katja Angenendt, Stefan Zaefferer, Baptiste Gault, Binhan Sun, Dirk Ponge, Dierk Raabe

Abstract: The interaction between boron and hydrogen at grain boundaries has been investigated experimentally and numerically in boron-doped and boron-free martensitic steels using thermal desorption spectrometry (TDS) and ab initio calculations. The calculations show that boron and hydrogen are attracted to grain boundaries but boron can repel hydrogen. This behavior has also been observed using TDS measur… ▽ More The interaction between boron and hydrogen at grain boundaries has been investigated experimentally and numerically in boron-doped and boron-free martensitic steels using thermal desorption spectrometry (TDS) and ab initio calculations. The calculations show that boron and hydrogen are attracted to grain boundaries but boron can repel hydrogen. This behavior has also been observed using TDS measurements, with the disappearance of one peak when boron is incorporated into the microstructure. Additionally, the microstructure of both steels has been studied through electron backscattered diffraction, electron channeling contrast imaging, synchrotron X-ray measurements, and atom probe tomography. While they have a similar grain size, grain boundary distribution, and dislocation densities, a pronounced boron segregation into PAGBs is observed for boron-doped steels. Then, the equilibrium hydrogen concentration in different trapping sites has been evaluated using the Langmuir-McLean approximation. This thermodynamic model shows that the distribution of hydrogen is identical for all traps when the total hydrogen concentration is low for boron-free steel. However, when it increases, traps of the lowest segregation energies (mostly PAGBs) are firstly saturated, which promotes failure initiation at this defect type. This finding partially explains why PAGBs are the weakest microstructure feature when martensitic steels are exposed to hydrogen-containing environments. △ Less

Submitted 22 November, 2024; v1 submitted 4 July, 2024; originally announced July 2024.

Comments: Pre-printed version

Journal ref: International Journal of Hydrogen Energy 95 (2024), 734-746

Additively manufacturable high-strength aluminum alloys with thermally stable microstructures enabled by hybrid machine learning-based design

Authors: S. Mohadeseh Taheri-Mousavi, Michael Xu, Florian Hengsbach, Clay Houser, Zhaoxuan Ge, Benjamin Glaser, Shaolou Wei, Mikro Schaper, James M. LeBeau, Greg B. Olson, A. John Hart

Abstract: Additively manufactured (AM) aluminum alloys with high strength and thermal stability have broad applications in turbine engines, vacuum pumps, heat exchangers, and many other industrial systems. Employing precipitates with an L1$_2$ structure to block dislocation motions is a widespread strategy to strengthen aluminum. However, to achieve high strength, a high volume fraction of small precipitate… ▽ More Additively manufactured (AM) aluminum alloys with high strength and thermal stability have broad applications in turbine engines, vacuum pumps, heat exchangers, and many other industrial systems. Employing precipitates with an L1$_2$ structure to block dislocation motions is a widespread strategy to strengthen aluminum. However, to achieve high strength, a high volume fraction of small precipitates is required, and these characteristics are generally mutually exclusive. Here, we show that for certain compositions of Al alloys, L1$_2$ phases initially precipitate as sub-micron metastable ternary phases under the rapid solidification conditions of powder bed AM, yet the subsequent L1$_2$ phases that precipitate during heat treatment of the sample remain at the nanoscale, imparting high strength. For strength to be retained at elevated temperature, these nanoprecipitates must have low coarsening rates. To inversely design the composition of an alloy to have these target microstructural features, we used hybrid calculation of phase diagram (CALPHAD)-based integrated computational materials engineering (ICME) and Bayesian optimization techniques. We tested our approach by designing an Al-Er-Zr-Y-Yb-Ni model alloy, and the selected composition was manufactured in powder form as AM feedstock. The strength of specimens manufactured via laser powder bed fusion (LPBF) from the designed composition is comparable to that of wrought Al 7075, yet without cracking that occurs upon LPBF of Al 7075. After high-temperature (400$^\circ$C) aging the designed alloy is 50% stronger than the strongest known benchmark printable Al alloy. △ Less

Submitted 19 January, 2025; v1 submitted 25 June, 2024; originally announced June 2024.

Unveiling the Boson Peaks in Amorphous Phase-Change Materials

Authors: Jens Moesgaard, Tomoki Fujita, Shuai Wei

Abstract: The Boson peak is a universal phenomenon in amorphous solids. It can be observed as an anomalous contribution to the low-temperature heat capacity over the Debye model. Amorphous phase-change materials (PCMs) such as Ge-Sb-Te are a family of poor glass formers with fast crystallization kinetics, being of interest for phase-change memory applications. So far, whether Boson peaks exist in PCMs is un… ▽ More The Boson peak is a universal phenomenon in amorphous solids. It can be observed as an anomalous contribution to the low-temperature heat capacity over the Debye model. Amorphous phase-change materials (PCMs) such as Ge-Sb-Te are a family of poor glass formers with fast crystallization kinetics, being of interest for phase-change memory applications. So far, whether Boson peaks exist in PCMs is unknown and, if they do, their relevance to PCM properties is unclear. Here, we investigate the thermodynamic properties of the pseudo-binary compositions on the tie-line between Ge15Te85 and Ge15Sb85 from a few Kelvins to the liquidus temperatures. Our results demonstrate the evidence of the pronounced Boson peaks in heat capacity below 10 K in the amorphous phase of all compositions. By fitting the data using the Debye model combined with the Einstein model, we can extract the characteristic parameters of the Boson peaks and attribute their origin to the excess vibrational modes of dynamic defects in the amorphous solids. We find that these parameters correlate almost linearly with the Sb-content of the alloys, despite the nonmonotonic behaviors in glass forming abilities. A larger contribution of excess vibrational modes correlates with a larger width of enthalpy relaxation below the glass transition temperature Tg. In a broader context, we show that the correlations of the characteristic parameters of the Boson peaks with Tg and kinetic fragility, vary according to the type of bonding. Specifically, metallic glasses and conventional covalent glasses exhibit distinct patterns of dependence, whereas PCMs manifest characteristics that lie in between. A deeper understanding of the Boson peaks in PCMs holds the promise to enable predictions of material properties at higher temperatures based on features observed in low-temperature heat capacity. △ Less

Submitted 26 April, 2024; originally announced April 2024.

3D deep learning for enhanced atom probe tomography analysis of nanoscale microstructures

Authors: Jiwei Yu, Zhangwei Wang, Aparna Saksena, Shaolou Wei, Ye Wei, Timoteo Colnaghi, Andreas Marek, Markus Rampp, Min Song, Baptiste Gault, Yue Li

Abstract: Quantitative analysis of microstructural features on the nanoscale, including precipitates, local chemical orderings (LCOs) or structural defects (e.g. stacking faults) plays a pivotal role in understanding the mechanical and physical responses of engineering materials. Atom probe tomography (APT), known for its exceptional combination of chemical sensitivity and sub-nanometer resolution, primaril… ▽ More Quantitative analysis of microstructural features on the nanoscale, including precipitates, local chemical orderings (LCOs) or structural defects (e.g. stacking faults) plays a pivotal role in understanding the mechanical and physical responses of engineering materials. Atom probe tomography (APT), known for its exceptional combination of chemical sensitivity and sub-nanometer resolution, primarily identifies microstructures through compositional segregations. However, this fails when there is no significant segregation, as can be the case for LCOs and stacking faults. Here, we introduce a 3D deep learning approach, AtomNet, designed to process APT point cloud data at the single-atom level for nanoscale microstructure extraction, simultaneously considering compositional and structural information. AtomNet is showcased in segmenting L12-type nanoprecipitates from the matrix in an AlLiMg alloy, irrespective of crystallographic orientations, which outperforms previous methods. AtomNet also allows for 3D imaging of L10-type LCOs in an AuCu alloy, a challenging task for conventional analysis due to their small size and subtle compositional differences. Finally, we demonstrate the use of AtomNet for revealing 2D stacking faults in a Co-based superalloy, without any defected training data, expanding the capabilities of APT for automated exploration of hidden microstructures. AtomNet pushes the boundaries of APT analysis, and holds promise in establishing precise quantitative microstructure-property relationships across a diverse range of metallic materials. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Ubiquitous short-range order in multi-principal element alloys

Authors: Ying Han, Hangman Chen, Yongwen Sun, Jian Liu, Shaolou Wei, Bijun Xie, Zhiyu Zhang, Yingxin Zhu, Meng Li, Judith Yang, Wen Chen, Penghui Cao, Yang Yang

Abstract: Recent research in multi-principal element alloys (MPEAs) has increasingly focused on the exploration and exploitation of short-range order (SRO) to enhance material performance. However, the understanding of SRO formation and the precise tuning of it within MPEAs remains poorly understood, limiting the comprehension of its impact on material properties and impeding the advancement of SRO engineer… ▽ More Recent research in multi-principal element alloys (MPEAs) has increasingly focused on the exploration and exploitation of short-range order (SRO) to enhance material performance. However, the understanding of SRO formation and the precise tuning of it within MPEAs remains poorly understood, limiting the comprehension of its impact on material properties and impeding the advancement of SRO engineering. Here, leveraging advanced additive manufacturing techniques that produce samples with a wide range of cooling rates (up to 10^7 K/s) and an improved quantitative electron microscopy method, we characterize SRO in three CoCrNi-based MPEAs to unravel the role of processing route and thermal history on SRO. Surprisingly, irrespective of the processing and thermal treatment applied, all samples exhibit similar levels of SRO, suggesting that prevalent SRO may form during the solidification process. Atomistic simulations of solidification verify that local chemical ordering arises in the liquid-solid interface (solidification front) even under the extreme cooling rate of 10^11 K/s. This phenomenon stems from the swift atomic diffusion in the supercooled liquid, which matches or even surpasses the rate of solidification. Therefore, SRO is an inherent characteristic of most MPEAs, insensitive to variations in cooling rates and annealing treatments typically available in experiments. Integrating thermal treatment with other strategies, such as mechanical deformation and irradiation, might be more effective approaches for harnessing SRO to achieve controlled material properties. △ Less

Submitted 23 February, 2024; originally announced February 2024.

Comments: 27 pages, 5 figures

Directly observing atomic-scale relaxations of a glass forming liquid using femtosecond X-ray photon correlation spectroscopy

Authors: Tomoki Fujita, Yanwen Sun, Haoyuan Li, Thies J. Albert, Sanghoon Song, Takahiro Sato, Jens Moesgaard, Antoine Cornet, Peihao Sun, Ying Chen, Mianzhen Mo, Narges Amini, Fan Yang, Arune Makareviciute, Garrett Coleman, Pierre Lucas, Jan Peter Embs, Vincent Esposito, Joan Vila-Comamala, Nan Wang, Talgat Mamyrbayev, Christian David, Jerome Hastings, Beatrice Ruta, Paul Fuoss , et al. (3 additional authors not shown)

Abstract: Glass forming liquids exhibit structural relaxation behaviors, reflecting underlying atomic rearrangements on a wide range of timescales. These behaviors play a crucial role in determining many material properties. However, the relaxation processes on the atomic scale are not well understood due to the experimental difficulties in directly characterizing the evolving correlations of atomic order i… ▽ More Glass forming liquids exhibit structural relaxation behaviors, reflecting underlying atomic rearrangements on a wide range of timescales. These behaviors play a crucial role in determining many material properties. However, the relaxation processes on the atomic scale are not well understood due to the experimental difficulties in directly characterizing the evolving correlations of atomic order in disordered systems. Here, taking the model system Ge15Te85, we demonstrate an experimental approach that probes the relaxation dynamics by scattering the coherent X-ray pulses with femtosecond duration produced by X-ray free electron lasers (XFELs). By collecting the summed speckle patterns from two rapidly successive, nearly identical X-ray pulses generated using a split-delay system, we can extract the contrast decay of speckle patterns originating from sample dynamics and observe the full decorrelation of local order on the sub-picosecond timescale. This provides the direct atomic-level evidence of fragile liquid behavior of Ge15Te85. Our results demonstrate the strategy for XFEL-based X-ray photon correlation spectroscopy (XPCS), attaining femtosecond temporal and atomic-scale spatial resolutions. This twelve orders of magnitude extension from the millisecond regime of synchrotron-based XPCS opens a new avenue of experimental studies of relaxation dynamics in liquids, glasses, and other highly disordered systems. △ Less

Submitted 8 June, 2024; v1 submitted 13 December, 2023; originally announced December 2023.

Boundary algebras of the Kitaev Quantum Double model

Authors: Mario Tomba, Shuqi Wei, Brett Hungar, Daniel Wallick, Kyle Kawagoe, Chian Yeong Chuah, David Penneys

Abstract: The recent article [arXiv:2307.12552] gave local topological order (LTO) axioms for a quantum spin system, showed they held in Kitaev's Toric Code and in Levin-Wen string net models, and gave a bulk boundary correspondence to describe bulk excitations in terms of the boundary net of algebras. In this article, we prove the LTO axioms for Kitaev's Quantum Double model for a finite group $G$. We iden… ▽ More The recent article [arXiv:2307.12552] gave local topological order (LTO) axioms for a quantum spin system, showed they held in Kitaev's Toric Code and in Levin-Wen string net models, and gave a bulk boundary correspondence to describe bulk excitations in terms of the boundary net of algebras. In this article, we prove the LTO axioms for Kitaev's Quantum Double model for a finite group $G$. We identify the boundary nets of algebras with fusion categorical nets associated to $(\mathsf{Hilb}(G),\mathbb{C}[G])$ or $(\mathsf{Rep}(G),\mathbb{C}^G)$ depending on whether the boundary cut is rough or smooth respectively. This allows us to make connections to work of Ogata on the type of the cone von Neumann algebras in the algebraic quantum field theory approach to topological superselection sectors. We show that the boundary algebras can also be calculated from a trivial $G$-symmetry protected topological phase ($G$-SPT), and that the gauging map preserves the boundary algebras. Finally, we compute the boundary algebras for the (3+1)D Quantum Double model associated to an abelian group. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: 18 pages, many tikz figures

MSC Class: 81T05; 81T25 (primary); 18M20; 46L60; 81V27 (secondary)

A powered full quantum eigensolver for energy band structures

Authors: Bozhi Wang, Jingwei Wen, Jiawei Wu, Haonan Xie, Fan Yang, Shijie Wei, Gui-lu Long

Abstract: There has been an increasing research focus on quantum algorithms for condensed matter systems recently, particularly on calculating energy band structures. Here, we propose a quantum algorithm, the powered full quantum eigensolver(P-FQE), by using the exponentiation of operators of the full quantum eigensolver(FQE). This leads to an exponential increase in the success probability of measuring the… ▽ More There has been an increasing research focus on quantum algorithms for condensed matter systems recently, particularly on calculating energy band structures. Here, we propose a quantum algorithm, the powered full quantum eigensolver(P-FQE), by using the exponentiation of operators of the full quantum eigensolver(FQE). This leads to an exponential increase in the success probability of measuring the target state in certain circumstances where the number of generating elements involved in the exponentiation of operators exhibit a log polynomial dependence on the number of orbitals. Furthermore, we conduct numerical calculations for band structure determination of the twisted double-layer graphene. We experimentally demonstrate the feasibility and robustness of the P-FQE algorithm using superconducting quantum computers for graphene and Weyl semimetal. One significant advantage of our algorithm is its ability to reduce the requirements of extremely high-performance hardware, making it more suitable for energy spectra determination on noisy intermediate-scale quantum (NISQ) devices. △ Less

Submitted 6 August, 2023; originally announced August 2023.

Theoretical understanding of correlation between magnetic phase transition and the superconducting dome in high-Tc cuprates

Authors: Chen Zhang, Cai-Xin Zhang, Su-Huai Wei, Haiqing Lin, Hui-Xiong Deng

Abstract: Many issues concerning the origin of high-temperature superconductivity (HTS) are still under debate. For example, how the magnetic ordering varies with doping and its relationship with the superconducting temperature; and why the maximal Tc always occurs near the quantum critical point. In this paper, taking hole-doped La2CuO4 as a classical example, we employ the first-principles band structure… ▽ More Many issues concerning the origin of high-temperature superconductivity (HTS) are still under debate. For example, how the magnetic ordering varies with doping and its relationship with the superconducting temperature; and why the maximal Tc always occurs near the quantum critical point. In this paper, taking hole-doped La2CuO4 as a classical example, we employ the first-principles band structure and total energy calculations and Monte Carlo simulations to explore how the symmetry-breaking magnetic ground state evolves with hole doping and the origin of a dome-shaped superconductivity region in the phase diagram. We demonstrate that the local antiferromagnetic ordering and doping play key roles in determining the electron-phonon coupling, thus Tc. Initially, the La2CuO4 possesses a checkerboard local antiferromagnetic ground state. As the hole doping increases, Tc increases with the increase of the density of states at the Fermi surface. But as the doping increases further, the strength of the antiferromagnetic interaction weakens. At the critical doping level, a magnetic phase transition occurs that reduces the local antiferromagnetism-assisted electron-phonon coupling, thus diminishing the Tc. The superconductivity disappears in the heavily overdoped region when the antiferromagnetic ordering disappears. These observations could account for why cuprates have a dome-shaped superconductivity region in the phase diagram. Our study, thus, contributes to a fundamental understanding of the correlation between doping, local magnetic ordering, and superconductivity of HTS. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 14 pages, 3 figures in the main text; 11 pages, 7 figures in the supplementary materials

Determination of Local Short-Range Order in TiVNbHf(Al)

Authors: Michael Xu, Shaolou Wei, Cemal C. Tasan, James M. LeBeau

Abstract: The presence of short-range chemical order can be a key factor in determining the mechanical behavior of metals, but directly and unambiguously determining its distribution in complex concentrated alloy systems can be challenging. Here, we directly identify and quantify chemical order in the globally single phase BCC-TiVNbHf(Al) system using aberration corrected scanning transmission electron micr… ▽ More The presence of short-range chemical order can be a key factor in determining the mechanical behavior of metals, but directly and unambiguously determining its distribution in complex concentrated alloy systems can be challenging. Here, we directly identify and quantify chemical order in the globally single phase BCC-TiVNbHf(Al) system using aberration corrected scanning transmission electron microscopy (STEM) paired with spatial statistics methods. To overcome the difficulties of short-range order (SRO) quantification with STEM when the components of an alloy exhibit large atomic number differences and near equiatomic ratios, 'null hypothesis' tests are used to separate experiment from a random chemical distribution. Experiment is found to deviate from both the case of an ideal random solid solution and a fully ordered structure with statistical significance. We also identify local chemical order in TiVNbHf and confirm and quantify the enhancement of SRO with the addition of Al. These results provide insights into local chemical order in the promising TiVNbHf(Al) refractory alloys while highlighting the utility of spatial statistics in characterizing nanoscale SRO in compositionally complex systems. △ Less

Submitted 3 February, 2023; originally announced February 2023.

Graph deep learning accelerated efficient crystal structure search and feature extraction

Authors: Chuannan Li, Hanpu Liang, Xie Zhang, Zijing Lin, Su-Huai Wei

Abstract: Structural search and feature extraction are a central subject in modern materials design, the efficiency of which is currently limited, but can be potentially boosted by machine learning (ML). Here, we develop an ML-based prediction-analysis framework, which includes a symmetry-based combinatorial crystal optimization program (SCCOP) and a feature additive attribution model, to significantly redu… ▽ More Structural search and feature extraction are a central subject in modern materials design, the efficiency of which is currently limited, but can be potentially boosted by machine learning (ML). Here, we develop an ML-based prediction-analysis framework, which includes a symmetry-based combinatorial crystal optimization program (SCCOP) and a feature additive attribution model, to significantly reduce computational costs and to extract property-related structural features. Our method is highly accurate and predictive, and extracts structural features from desired structures to guide materials design. As a case study, we apply our new approach to a two-dimensional B-C-N system, which identifies 28 previously undiscovered stable structures out of 82 compositions; our analysis further establishes the structural features that contribute most to energy and bandgap. Compared to conventional approaches, SCCOP is about 10 times faster while maintaining a comparable accuracy. Our new framework is generally applicable to all types of systems for precise and efficient structural search, providing new insights into the relationship between ML-extracted structural features and physical properties. △ Less

Submitted 7 February, 2023; originally announced February 2023.

Ultrafast spintronics with geometric effects in non-adiabatic wave-packet dynamics

Authors: Matisse Wei-Yuan Tu, Li-Sheng Lin, Chung-Yu Wang, Jyh-Pin Chou, Sin-Yi Wei, Chien-Ming Tu, Chia-Nung Kuo, Chin-Shan Lue, Chih-Wei Luo

Abstract: Motivated by the intriguing possibilities of steering ultrafast non-adiabatic processes through the geometric properties of bands in quantum materials by laser pulses, we extend a wave-packet transport theory, previously well-established in the adiabatic regime that intuitively captured geometric properties of bands, to the transient and non-adiabatic regime. This extension facilitates us to inves… ▽ More Motivated by the intriguing possibilities of steering ultrafast non-adiabatic processes through the geometric properties of bands in quantum materials by laser pulses, we extend a wave-packet transport theory, previously well-established in the adiabatic regime that intuitively captured geometric properties of bands, to the transient and non-adiabatic regime. This extension facilitates us to investigate macroscopic ways of manifesting microscopic band-geometric effects that highlight the special capability of non-adiabatic drivings not available to adiabatic drivings. These include imprinting band-geometric properties to the current rate after switching off the laser pulses and the induction of intrinsic macroscopic spin polarisation with an orientation not accessible by adiabatic processes. In particular, the microscopic geometrically-rooted intrinsic spin coherence is shown to underlie the spin-mediated parts of the macroscopic photocurrents. Through explicit calculations of an example with Rashba spin-orbit coupling, the spin-mediated part is shown to be discernible from the non-spin-mediated part in terms of the anisotropy of the photocurrents. Working principles behind the above theoretical results allegedly applicable beyond the Rashba example are distilled to inspect experimental data collected for SnSe, exhibiting considerable anisotropic effects. Consistency between theory and experiment is observed, paving the way of further exploration into the above intended direction. △ Less

Submitted 29 October, 2024; v1 submitted 9 August, 2022; originally announced August 2022.

Comments: substantially revised and comparison to experiments added. 15+26 pages, 7 figures

First-principles Study of Non-Collinear Spin Fluctuations Using Self-adaptive Spin-constrained Method

Authors: Zefeng Cai, Ke Wang, Yong Xu, Su-Huai Wei, Ben Xu

Abstract: Spin fluctuations have a substantial influence on the electron and lattice behaviors in magnetic materials, which, however, is difficult to be tracked properly by prevalent first-principles methods. We propose a versatile self-adaptive spin-constrained density functional theory formalism. Applying it to the simulation of itinerant ferromagnetic Fe, we present the potential energy surface comprisin… ▽ More Spin fluctuations have a substantial influence on the electron and lattice behaviors in magnetic materials, which, however, is difficult to be tracked properly by prevalent first-principles methods. We propose a versatile self-adaptive spin-constrained density functional theory formalism. Applying it to the simulation of itinerant ferromagnetic Fe, we present the potential energy surface comprising longitudinal and transverse variations of magnetization. Moreover, this method enables us to identify the delicate coupling between the magnetic moments and other degrees of freedom by following energy variation. As manifestations, magnetic interaction, electronic band structure, and phonon dispersion curves are illustrated for single-layered CrI$_3$ with excited magnetic configuration. All the above information can be obtained not only for spin fluctuations but also for non-collinear spin configurations with arbitrarily modulations; thus, it holds promise for future applications in condensed-matter physics research. △ Less

Submitted 12 February, 2023; v1 submitted 9 August, 2022; originally announced August 2022.

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal

Authors: Mengying Bian, Liang Zhu, Xiao Wang, Junho Choi, Rajesh V. Chopdekar, Sichen Wei, Lishu Wu, Chang Huai, Austin Marga, Qishuo Yang, Yuguang C. Li, Fei Yao, Ting Yu, Scott A. Crooker, Xuemei M Cheng, Renat F. Sabirianov, Shengbai Zhang, Junhao Lin, Yanglong Hou, Hao Zeng

Abstract: Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting th… ▽ More Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few ten microns, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)-7 x 7 (WSe2) supercell matching, forming a single crystalline moire superlattice. Our work has established a conceptually distinct paradigm of thin film epitaxy termed dative epitaxy, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Journal ref: Advanced Materials 2022, 2200117

Robust Kagome Electronic Structure in Topological Quantum Magnets XMn6Sn6 (X = Dy, Tb, Gd, Y)

Authors: X. Gu, C. Chen, W. S. Wei, J. Y. Liu, X. Du, D. Pei, J. S. Zhou, R. Z. Xu, Z. X. Yin, W. X. Zhao, Y. D. Li, C. Jozwiak, A. Bostwick, E. Rotenberg, D. Backes, L. S. I. Veiga, S. Dhesi, T. Hesjedal, G. van der Laan, H. F. Du, W. J. Jiang, Y. P. Qi, G. Li, W. J. Shi, Z. K. Liu , et al. (2 additional authors not shown)

Abstract: Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of XMn6Sn6… ▽ More Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of XMn6Sn6 (X = Dy, Tb, Gd, Y) family compounds. We observe the Dirac fermion and the flat band arising from the magnetic kagome lattice of Mn atoms. Interestingly, the flat band locates in the same energy region in all compounds studied, regardless of their different magnetic ground states and 4f electronic configurations. These observations suggest a robust Mn magnetic kagome lattice across the XMn6Sn6 family, thus providing an ideal platform for the search and investigation on new emergent phenomena in magnetic topological materials. △ Less

Submitted 20 March, 2022; originally announced March 2022.

Comments: PRB accepted

Designing Ultra-Flat Bands in Twisted Bilayer Materials at Large Twist Angles without specific degree

Authors: Shengdan Tao, Xuanlin Zhang, Jiaojiao Zhu, Pimo He, Shengyuan A. Yang, Yunhao Lu, Su-Huai Wei

Abstract: Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new… ▽ More Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moire superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer alpha-In2Se3 and bilayer InSe. For bilayer alpha-In2Se3, we show that a twist angle -13.2 degree is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle -1.1 degree. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way towards engineering such flat bands in a large family of 2D materials. △ Less

Submitted 28 February, 2022; originally announced February 2022.

Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations

Authors: Shanshan Wang, Menglin Huang, Yu-Ning Wu, Weibin Chu, Jin Zhao, Aron Walsh, Xin-Gao Gong, Su-Huai Wei, Shiyou Chen

Abstract: The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations based on time-dependent density functional theory (TDDFT) are widely used to study excited-state carrier dynamics. However, the calculated carrier lifetimes are often different from experimental results by orders of mag… ▽ More The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations based on time-dependent density functional theory (TDDFT) are widely used to study excited-state carrier dynamics. However, the calculated carrier lifetimes are often different from experimental results by orders of magnitude. In this work, by revisiting the definition of carrier lifetime and considering different recombination mechanisms, we report a systematic procedure for calculating the effective carrier lifetime in realistic semiconductor crystals that can be compared directly to experimental measurements. The procedure shows that considering all recombination mechanisms and using reasonable densities of carriers and defects are crucial in calculating the effective lifetime. When NAMD simulations consider only Shockey-Read-Hall (SRH) defect-assisted and band-to-band non-radiative recombination while neglect band-to-band radiative recombination, and the densities of non-equilibrium carriers and defects in supercell simulations are much higher than those in realistic semiconductors under solar illumination, the calculated lifetimes are ineffective and thus differ from experiments. Using our procedure, the calculated effective lifetime of the halide perovskite CH3NH3PbI3 agrees with experiments. It is mainly determined by band-to-band radiative and defect-assisted non-radiative recombination, while band-to-band non-radiative recombination is negligible. These results indicate that it is possible to calculate carrier lifetimes accurately based on NAMD simulations, but the directly calculated values should be converted to effective lifetimes for comparison to experiments. The revised procedure can be widely applied in future carrier lifetime simulations. △ Less

Submitted 16 February, 2022; originally announced February 2022.

Comments: 30 pages, 5 figures

Journal ref: Nature Computational Science 2, 486 (2022)

Temperature Effect on Charge-state Transition Levels of Defects in Semiconductors

Authors: Shuang Qiao, Yu-Ning Wu, Xiaolan Yan, Bartomeu Monserrat, Su-Huai Wei, Bing Huang

Abstract: Defects are crucial in determining the overall physical properties of semiconductors. Generally, the charge-state transition level (TEL), one of the key physical quantities that determines the dopability of defects in semiconductors, is temperature dependent. However, little is known about the temperature dependence of TEL, and, as a result, almost all existing defect theories in semiconductors ar… ▽ More Defects are crucial in determining the overall physical properties of semiconductors. Generally, the charge-state transition level (TEL), one of the key physical quantities that determines the dopability of defects in semiconductors, is temperature dependent. However, little is known about the temperature dependence of TEL, and, as a result, almost all existing defect theories in semiconductors are built on a temperature-independent approximation. In this article, by deriving the basic formulas for temperature-dependent TEL, we have established two fundamental rules for the temperature dependence of TEL in semiconductors. Based on these rules, surprisingly, it is found that the temperature dependences of TEL for different defects are rather diverse: it can become shallower, deeper, or stay unchanged. This defect-specific behavior is mainly determined by the synergistic or opposing effects between free energy corrections (determined by the local volume change around the defect during a charge-state transition) and band edge changes (which differ for different semiconductors). These basic formulas and rules, confirmed by a large number of state-of-the-art temperature-dependent defect calculations in GaN, may potentially be widely adopted as guidelines for understanding or optimizing doping behaviors in semiconductors at finite temperatures. △ Less

Submitted 1 January, 2022; originally announced January 2022.

Dual-Phase MoS$_2$ And MXene Nanohybrids for Efficient Electrocatalytic Hydrogen Evolution

Authors: Sichen Wei, Yu Fu, Huamin Li, Fei Yao

Abstract: Molybdenum Disulfide (MoS$_2$) has been recognized as a potential substitution of Platinum (Pt) for electrochemical hydrogen evolution reaction (HER). However, the broad adoption of MoS$_2$ is hindered by its limited number of active sites and relatively low inherent electrical conductivity. In this work, we demonstrated a synergistic enhancement of both active site exposure and electrical conduct… ▽ More Molybdenum Disulfide (MoS$_2$) has been recognized as a potential substitution of Platinum (Pt) for electrochemical hydrogen evolution reaction (HER). However, the broad adoption of MoS$_2$ is hindered by its limited number of active sites and relatively low inherent electrical conductivity. In this work, we demonstrated a synergistic enhancement of both active site exposure and electrical conductivity by a one-step solvothermal synthesis technique. The 1T-phase enriched MoS$_2$ was directly formed on the titanium carbide (Ti$_3$C$_2$Tx, MXene) with carbon nanotubes (CNTs) acting as crosslinks. The existence of edge-enriched metallic phase MoS$_2$, the conductive backbone of MXene along with the crosslinking function of CNTs clearly improved the overall electrical conductivity of the catalyst. Moreover, the integration of two-dimensional (2D) MoS$_2$ with MXene effectively suppressed the MXene oxidation and 2D layer restacking, leading to good catalytic stability. As a result, an overpotential of 169 mV and a low Tafel slope of 51 mV/dec was successfully achieved. This work provides a new route for 2D-based electrocatalyst engineering and sheds light on the development of the next-generation PGM-free HER electrocatalysts. △ Less

Submitted 23 September, 2021; originally announced September 2021.

Machine-Learning Enabled Search for The Next-Generation Catalyst for Hydrogen Evolution Reaction

Authors: S. Wei, S. Baek, H. Yue, S. Yun, S. Park, Y. Lee, J. Zhao, H. Li, K. Reyes, F. Yao

Abstract: The development of active catalysts for hydrogen evolution reaction (HER) made from low-cost materials constitutes a crucial challenge in the utilization of hydrogen energy. Earth-abundant molybdenum disulfide (MoS$_2$) has been discovered recently with good activity and stability for HER. In this report, we employed the hydrothermal technique for MoS$_2$ synthesis which is a cost-effective and en… ▽ More The development of active catalysts for hydrogen evolution reaction (HER) made from low-cost materials constitutes a crucial challenge in the utilization of hydrogen energy. Earth-abundant molybdenum disulfide (MoS$_2$) has been discovered recently with good activity and stability for HER. In this report, we employed the hydrothermal technique for MoS$_2$ synthesis which is a cost-effective and environmentally friendly approach and has the potential for future mass production. To investigate the structure-property relationship, scanning electron microscope (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and various electrochemical characterizations have been conducted. A strong correlation between the material structure and the HER performance has been observed. Moreover, machine-learning (ML) techniques were built and subsequently used within a Bayesian Optimization framework to validate the optimal parameter combinations for synthesizing high-quality MoS$_2$ catalyst within the limited parameter space. The model will be able to guide the wet chemical synthesis of MoS$_2$ and produce the most effective HER catalyst eventually. △ Less

Submitted 22 September, 2021; originally announced September 2021.

Interplay between magnetism and superconductivity in UTe2

Authors: Di S. Wei, David Saykin, Oliver Y. Miller, Sheng Ran, Shanta R. Saha, Daniel F. Agterberg, Joerg Schmalian, Nicholas P. Butch, Johnpierre Paglione, Aharon Kapitulnik

Abstract: Time-reversal symmetry breaking (TRSB) in UTe2 was inferred from observations of a spontaneous Kerr response in the superconducting state after cooling in zero magnetic field, while a finite c-axis magnetic field training was further used to determine the nature of the non-unitary composite order-parameter of this material. Here we present an extensive study of the magnetic-field-trained Kerr effe… ▽ More Time-reversal symmetry breaking (TRSB) in UTe2 was inferred from observations of a spontaneous Kerr response in the superconducting state after cooling in zero magnetic field, while a finite c-axis magnetic field training was further used to determine the nature of the non-unitary composite order-parameter of this material. Here we present an extensive study of the magnetic-field-trained Kerr effect, which unveils a unique critical state of pinned ferromagnetic vortices. We show that a remanent Kerr signal that appears following the removal of a training magnetic field, which reflects the response of the TRSB order parameter and the external magnetic field through the paramagnetic susceptibility. This unambiguously demonstrate the importance of the ferromagnetic fluctuations and their intimate relation to the composite order parameter. Focusing the measurement to the center of the sample, we are able to accurately determine the maximum field that is screened by the critical state and the respective critical current. Measurements in the presence of magnetic field show the tendency of the superconductor to produce shielding currents that oppose the increase in vortex-induced magnetization due to the diverging paramagnetic susceptibility. △ Less

Submitted 22 August, 2021; originally announced August 2021.

Comments: Manuscript and Supplementary Information as a single PDF

Emerging Oscillating Reactions at the Insulator/Semiconductor Solid/Solid Interface via Proton Implantation

Authors: Dechao Meng, Guanghui Zhang, Ming Li, Zeng-hui Yang, Hang Zhou, Mu Lan, Yang Liu, Shouliang Hu, Yu Song, Chunsheng Jiang, Lei Chen, Hengli Duan, Wensheng Yan, Jianming Xue, Xu Zuo, Yijia Du, Gang Dai, Su-Huai Wei

Abstract: Most oscillating reactions (ORs) happen in solutions. Few existing solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or solid/liquid interfaces, or at the all-solid interfaces neighboring to metals or ionic conductors (e.g., electrolysis or electroplate). We report in this paper a new type of all-solid based OR that happens at the insulator (amorphous SiO$_2$)/semiconductor… ▽ More Most oscillating reactions (ORs) happen in solutions. Few existing solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or solid/liquid interfaces, or at the all-solid interfaces neighboring to metals or ionic conductors (e.g., electrolysis or electroplate). We report in this paper a new type of all-solid based OR that happens at the insulator (amorphous SiO$_2$)/semiconductor (Si) interface with the interfacial point defects as the oscillating species. This OR is the first example of the point-defect coupled ORs (PDC-ORs) proposed by H. Schmalzried et al. and J. Janek et al. decades ago. We use proton implantation as the driving force of the oscillation, and employ techniques common in semiconductor device characterization to monitor the oscillation in situ. This approach not only overcomes the difficulties associated with detecting reactions in solids, but also accurately measure the oscillating ultra-low concentration ($10^{10}\sim10^{11}$ cm$^{-2}$) of the interfacial charged point-defects. We propose a mechanism for the reported PDC-OR based on the Brusselator model by identifying the interfacial reactions. △ Less

Submitted 13 July, 2021; originally announced July 2021.

Comments: 57 pages, 12 figures

Superconductivity in ThMo2Si2C with Mo2C Square Net

Authors: Zichen Liu, Baizhuo Li, Yusen Xiao, Qingchen Duan, Yanwei Cui, YuXue Mei, Qian Tao, Shuli Wei, Shugang Tan, Qiang Jing, Qing Lu, Yuping Sun, Yunyan Liu, Shenggui Fu, Hao Jiang, Zhi Ren, Zhu'an Xu, Cao Wang, Guanghan Cao

Abstract: We report the superconductivity of a new quaternary compound ThMo$_2$Si$_2$C, synthesized with the arc-melting technique. The compound crystallizes in a tetragonal CeCr$_2$Si$_2$C-type structure with cell parameters of $a$ = 4.2296 Åand $c$ = 5.3571 Å. An interlayer Si-Si covalent bonding is suggested by the atomic distance. The electrical resistivity and magnetic susceptibility measurements indic… ▽ More We report the superconductivity of a new quaternary compound ThMo$_2$Si$_2$C, synthesized with the arc-melting technique. The compound crystallizes in a tetragonal CeCr$_2$Si$_2$C-type structure with cell parameters of $a$ = 4.2296 Åand $c$ = 5.3571 Å. An interlayer Si-Si covalent bonding is suggested by the atomic distance. The electrical resistivity and magnetic susceptibility measurements indicate a Pauli-paramagnetic metal with dominant electron-electron scattering in the normal-state. Bulk superconductivity at 2.2 K is demonstrated with a dimensionless specific-heat jump of $ΔC/γ_{\rm n}T$ = 0.98. The superconducting parameters of the critical magnetic fields, coherence length, penetration depth, and superconducting energy gap are given. △ Less

Submitted 20 April, 2021; originally announced April 2021.

Comments: 14 pages, 6 figures, 3 tables. Accepted for publication in SCIENCE CHINA Physics, Mechanics & Astronomy

Journal ref: Sci. China Phys. Mech. Astron. 64, 277411 (2021)

Glass Transition of the Phase Change Material AIST and its Impact on Crystallization

Authors: Julian Pries, Julia Sehringer, Shuai Wei, Pierre Lucas, Matthias Wuttig

Abstract: Engineering phase change materials (PCM) to realize superior data storage devices requires a detailed understanding of crystallization kinetics and its temperature dependence. The temperature dependence of crystallization differs distinctly between crystallizing from the glassy phase and the undercooled liquid (UCL). Hence, knowing the phase from which crystallization occurs is necessary for predi… ▽ More Engineering phase change materials (PCM) to realize superior data storage devices requires a detailed understanding of crystallization kinetics and its temperature dependence. The temperature dependence of crystallization differs distinctly between crystallizing from the glassy phase and the undercooled liquid (UCL). Hence, knowing the phase from which crystallization occurs is necessary for predicting the switching ability. Here, we measure the glassy dynamics and crystallization kinetics using calorimetry for heating rates spanning over six orders of magnitude. Our results show that the prominent PCM (Ag,In)-doped Sb2Te (AIST) exhibits a change from crystallizing from the glassy phase to crystallizing from the UCL at a critical heating rate of 5,000 K/s. Above the glass transition, the activation energy of crystallization changes drastically enabling rapid crystallization at elevated temperatures. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Covalent 2D Cr$_2$Te$_3$ ferromagnet

Authors: Mengying Bian, Aleksandr N. Kamenskii, Mengjiao Han, Wenjie Li, Sichen Wei, Xuezeng Tian, David B. Eason, Fan Sun, Keke He, Haolei Hui, Fei Yao, Renat Sabirianov, Jonathan P. Bird, Chunlei Yang, Jianwei Miao, Junhao Lin, Scott A. Crooker, Yanglong Hou, Hao Zeng

Abstract: To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr$_2$Te$_3$ with a thickness down to one-unit-cell. The 2D Cr$_2$Te$_3$ crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a tran… ▽ More To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr$_2$Te$_3$ with a thickness down to one-unit-cell. The 2D Cr$_2$Te$_3$ crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a transition from canted to collinear ferromagnetism, a transition from perpendicular to in-plane anisotropy, and emergent half-metallic behavior in atomically-thin Cr$_2$Te$_3$, suggesting its potential application for injecting carriers with high spin polarization into spintronic devices. △ Less

Submitted 27 February, 2021; originally announced March 2021.

Journal ref: MATER. RES. LETT.9 (2021), 205-212

Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding

Authors: Christoph Persch, Maximilian J. Müller, Aakash Yadav, Julian Pries, Natalie Honné, Peter Kerres, Shuai Wei, Hajime Tanaka, Paolo Fantini, Enrico Varesi, Fabio Pellizzer, Matthias Wuttig

Abstract: Controlling a state of material between its crystalline and glassy phase has fostered many real-world applications. Nevertheless, design rules for crystallization and vitrification kinetics still lack predictive power. Here, we identify stoichiometry trends for these processes in phase change materials, i.e. along the GeTe-GeSe, GeTe-SnTe, and GeTe-Sb2Te3 pseudo-binary lines employing a pump-probe… ▽ More Controlling a state of material between its crystalline and glassy phase has fostered many real-world applications. Nevertheless, design rules for crystallization and vitrification kinetics still lack predictive power. Here, we identify stoichiometry trends for these processes in phase change materials, i.e. along the GeTe-GeSe, GeTe-SnTe, and GeTe-Sb2Te3 pseudo-binary lines employing a pump-probe laser setup and calorimetry. We discover a clear stoichiometry dependence of crystallization speed along a line connecting regions characterized by two fundamental bonding types, metallic and covalent bonding. Increasing covalency slows down crystallization by six orders of magnitude and promotes vitrification. The stoichiometry dependence is correlated with material properties, such as the optical properties of the crystalline phase and a bond indicator, the number of electrons shared between adjacent atoms. A quantum-chemical map explains these trends and provides a blueprint to design crystallization kinetics. △ Less

Submitted 26 February, 2021; originally announced March 2021.

Thermodynamics of free and bound magnons in graphene

Authors: Andrew T. Pierce, Yonglong Xie, Seung Hwan Lee, Patrick R. Forrester, Di S. Wei, Kenji Watanabe, Takashi Taniguchi, Bertrand I. Halperin, Amir Yacoby

Abstract: Symmetry-broken electronic phases support neutral collective excitations. For example, monolayer graphene in the quantum Hall regime hosts a nearly ideal ferromagnetic phase at filling factor $ν=1$ that spontaneously breaks spin rotation symmetry. This ferromagnet has been shown to support spin-wave excitations known as magnons which can be generated and detected electrically. While long-distance… ▽ More Symmetry-broken electronic phases support neutral collective excitations. For example, monolayer graphene in the quantum Hall regime hosts a nearly ideal ferromagnetic phase at filling factor $ν=1$ that spontaneously breaks spin rotation symmetry. This ferromagnet has been shown to support spin-wave excitations known as magnons which can be generated and detected electrically. While long-distance magnon propagation has been demonstrated via transport measurements, important thermodynamic properties of such magnon populations--including the magnon chemical potential and density--have thus far proven out of reach of experiments. Here, we present local measurements of the electron compressibility under the influence of magnons, which reveal a reduction of the $ν=1$ gap by up to 20%. Combining these measurements with estimates of the temperature, our analysis reveals that the injected magnons bind to electrons and holes to form skyrmions, and it enables extraction of the free magnon density, magnon chemical potential, and average skyrmion spin. Our methods furnish a novel means of probing the thermodynamic properties of charge-neutral excitations that is applicable to other symmetry-broken electronic phases. △ Less

Submitted 26 February, 2021; originally announced March 2021.

s-d coupling enhanced phonon anharmonicity in copper-based compounds

Authors: Kaike Yang, Huai Yang, Yujia Sun, Zhongming Wei, Jun Zhang, Jun-Wei Luo, Ping-Heng Tan, Shu-Shen Li, Su-Huai Wei, Hui-Xiong Deng

Abstract: Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogenides and copper halides are known to possess extreme low thermal conductivity, whereas the fundamental origin of the low thermal conductivity observed in the copper-based materials remains elusive. Here, we reveal that s… ▽ More Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogenides and copper halides are known to possess extreme low thermal conductivity, whereas the fundamental origin of the low thermal conductivity observed in the copper-based materials remains elusive. Here, we reveal that s-d coupling induced giant phonon anharmonicity is the fundamental mechanism responsible for the ultralow thermal conductivity of copper compounds. The symmetry controlled strong coupling of high-lying occupied copper 3d orbital with the unoccupied 4s state under thermal vibration remarkably lowers the lattice potential barrier, which enhances anharmonic scattering between phonons. This understanding is confirmed by temperature-dependent Raman spectra measurements. Our study offers an insight at atomic level connecting electronic structures with phonon vibration modes, and thus sheds light on materials properties that rely on electron-phonon coupling, such as thermoelectricity and superconductivity. △ Less

Submitted 24 February, 2021; originally announced February 2021.

Two-dimensional Cold Electron Transport for Steep-slope Transistors

Authors: Maomao Liu, Hemendra Nath Jaiswal, Simran Shahi, Sichen Wei, Yu Fu, Chaoran Chang, Anindita Chakravarty, Xiaochi Liu, Cheng Yang, Yanpeng Liu, Young Hee Lee, Fei Yao, Huamin Li

Abstract: Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D fiel… ▽ More Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a novel graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic cooling effect with the effective electron temperature of ~145 K in the monolayer MoS2, which enable the transport factor lowering and thus the steep-slope switching (across for 3 decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 μA/μm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the great potential of 2D Dirac-source cold electron transistor as an innovative steep-slope transistor concept, and provides new opportunities for 2D materials toward future energy-efficient nanoelectronics. △ Less

Submitted 27 December, 2020; originally announced December 2020.

Comments: currently under review

Materials design principles towards high hole mobility learning from an abnormally low hole mobility of silicon

Authors: Q. L. Yang, H. X. Deng, S. H. Wei, S. S. Li, J. W. Luo

Abstract: Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV column in the Periodic Table. In the past half-century, extensive efforts have been made to overcome the challenges of Si technology caused by low mobility in Si.… ▽ More Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV column in the Periodic Table. In the past half-century, extensive efforts have been made to overcome the challenges of Si technology caused by low mobility in Si. However, the fundamental understanding of the underlying mechanisms remains lacking. Here, we theoretically reproduce the experimental data for conventional group IV and III-V semiconductors without involving adjustable parameters by curing the shortcoming of classical models. We uncover that the abnormally low hole mobility in Si originating from a combination of the strong interband scattering resulting from its weak spin-orbit coupling and the intensive participation of optical phonons in hole-phonon scattering. In contrast, the strong spin-orbit coupling in Ge leads to a negligible interband scattering; the strong bond and light atom mass in diamond give rise to high optical phonons frequency, preventing their participation in scattering. Based on these understandings rooted into the fundamental atomic properties, we present design principles for semiconducting materials towards high hole mobility. △ Less

Submitted 4 November, 2020; originally announced November 2020.

Comments: 17 pages, 3 figures

Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review

Authors: Yu Song, Su-Huai Wei

Abstract: The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference between the practical and summed damages, indicating significant irradiation synergistic effects (ISEs). Understanding the behaviors and mechanisms of ISEs is e… ▽ More The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference between the practical and summed damages, indicating significant irradiation synergistic effects (ISEs). Understanding the behaviors and mechanisms of ISEs is essential to predict the practical damages. In this work, we first make a brief review on the state of the art, critically emphasizing on the difficulty encountered in previous models to understand the dose rate dependence of the ISEs. We then introduce in detail our models explaining this basic phenomenon, which can be described as follows. Firstly, we show our experimental works on PNP and NPN transistors. A variable neutron fluence and $γ$-ray dose setup is adopted. Fluence-dependent `tick'-like and sublinear dose profiles are observed for PNP and NPN transistors, respectively. Secondly, we describe our theoretical investigations on the positive ISE in NPN transistors. We propose an atomistic model of transformation and annihilation of $\rm V_2$ displacement defects in p-type silicon under ionization irradiation, which is totally different from the traditional picture of Coulomb interaction of oxide trapped charges in silica on charge carriers in irradiated silicon. The predicted novel dose and fluence dependences are fully verified by the experimental data. Thirdly, the mechanism of the observed negative ISE in PNP transistors is investigated in a similar way as in the NPN transistor case. The difference is that in n-type silicon, VO displacement defects also undergo an ionization-induced transformation and annihilation process. Our results show that, the evolution of displacement defects due to carrier-enhanced defect diffusion and reaction is the dominating mechanism of the ISEs. △ Less

Submitted 12 November, 2020; v1 submitted 25 October, 2020; originally announced October 2020.

Comments: 11 pages, 10 figures; accepted by ACS Applied Electronic Materials

Journal ref: ACS Applied Electronic Materials 2 (12), 3783 (2020)

Exploring In$_2$(Se$_{1-x}$Te$_x$)$_3$ alloys as photovoltaic materials

Authors: Wei Li, Xuefen Cai, Nicholas Valdes, Tianshi Wang, William Shafarman, Su-Huai Wei, Anderson Janotti

Abstract: In$_2$Se$_3$ in the three-dimensional (3D) hexagonal crystal structure with space group $P6_1$ ($γ$-In$_2$Se$_3$) has a direct band gap of $\sim$1.8 eV and high absorption coefficient, making it a promising semiconductor material for optoelectronics. Incorporating Te allows for tuning the band gap, adding flexibility to device design and extending the application range. Here we report the growth a… ▽ More In$_2$Se$_3$ in the three-dimensional (3D) hexagonal crystal structure with space group $P6_1$ ($γ$-In$_2$Se$_3$) has a direct band gap of $\sim$1.8 eV and high absorption coefficient, making it a promising semiconductor material for optoelectronics. Incorporating Te allows for tuning the band gap, adding flexibility to device design and extending the application range. Here we report the growth and characterization of $γ$-In$_2$Se$_3$ thin films, and results of hybrid density functional theory calculations to assess the electronic and optical properties of $γ$-In$_2$Se$_3$ and $γ$-In$_2$(Se$_{1-x}$Te$_x$)$_3$ alloys. The calculated band gap of 1.84 eV for $γ$-In$_2$Se$_3$ is in good agreement with data from the absorption spectrum, and the absorption coefficient is found to be as high as that of direct band gap conventional III-V and II-VI semiconductors. Incorporation of Te in the form of $γ$-In$_2$(Se$_{1-x}$Te$_x$)$_3$ alloys is an effective way to tune the band gap from 1.84 eV down to 1.23 eV, thus covering the optimal band gap range for solar cells. We also discuss band gap bowing and mixing enthalpies, aiming at adding $γ$-In$_2$Se$_3$ and $γ$-In$_2$(Se$_{1-x}$Te$_x$)$_3$ alloys to the available toolbox of materials for solar cells and other optoelectronic devices. △ Less

Submitted 28 September, 2020; v1 submitted 27 September, 2020; originally announced September 2020.

A Unified Theory and Fundamental Rules of Strain-dependent Doping Behaviors in Semiconductors

Authors: Xiaolan Yan, Pei Li, Su-Huai Wei, Bing Huang

Abstract: Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of fundamental rules. In this Letter, for the first time, we develop a unified theory to understand the total energy changes of defects (or dopants) with different charge states under strains, which can exhibit either parabolic or superli… ▽ More Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of fundamental rules. In this Letter, for the first time, we develop a unified theory to understand the total energy changes of defects (or dopants) with different charge states under strains, which can exhibit either parabolic or superlinear behaviors, determined by the size of defect-induced local volume change (ΔV). In general, ΔV increases (decreases) when an electron is added (removed) to (from) the defect site. Consequently, in terms of this unified theory, three fundamental rules can be obtained to further understand or predict the diverse strain-dependent doping behaviors, i.e., defect formation energies, charge-state transition levels, and Fermi pinning levels, in semiconductors. These three fundamental rules could be generally applied to improve the doping performance or overcome the doping bottlenecks in various semiconductors. △ Less

Submitted 26 March, 2021; v1 submitted 21 August, 2020; originally announced August 2020.

Journal ref: Chin. Phys. Lett., 2021 38 (8): 087103

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

Authors: Yu Song, Guanghui Zhang, Xue-Fen Cai, Yang Liu, Hang Zhou, Le Zhong, Gang Dai, Xu Zuo, Su-Huai Wei

Abstract: Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a uniform generation of $E'$ centers in the bulk silica region and their irreversible conversion to $P_b$ centers at the silica-silicon interface. But, the traditio… ▽ More Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a uniform generation of $E'$ centers in the bulk silica region and their irreversible conversion to $P_b$ centers at the silica-silicon interface. But, the traditional model fails to explain experimentally observed dependence of the defect concentrations on dose, especially at low dose rate. Here, we propose that, the generation of $E'$ is decelerated due to the dispersive diffusion of induced holes in the disordered silica and the conversion of $P_b$ is reversible due to recombination-enhanced defect reactions under irradiation. It is shown that the derived analytic model based on these new understandings can consistently explain the fundamental but puzzling dependence of the defect concentrations on dose and dose rate in a wide range. △ Less

Submitted 24 March, 2021; v1 submitted 10 August, 2020; originally announced August 2020.

Comments: 5 pages, 1 page of supplementary materials

Journal ref: Small 18, 2107516 (2022)

Universal criticality of thermodynamic curvatures for charged AdS black holes

Authors: Seyed Ali Hosseini Mansoori, Morteza Rafiee, Shao-Wen Wei

Abstract: In this paper, we analytically study the critical exponents and universal amplitudes of the thermodynamic curvatures such as the intrinsic and extrinsic curvature at the critical point of the small-large black hole phase transition for the charged AdS black holes. At the critical point, it is found that the normalized intrinsic curvature $R_N$ and extrinsic curvature $K_N$ has critical exponents 2… ▽ More In this paper, we analytically study the critical exponents and universal amplitudes of the thermodynamic curvatures such as the intrinsic and extrinsic curvature at the critical point of the small-large black hole phase transition for the charged AdS black holes. At the critical point, it is found that the normalized intrinsic curvature $R_N$ and extrinsic curvature $K_N$ has critical exponents 2 and 1, respectively. Based on them, the universal amplitudes $R_Nt^2$ and $K_Nt$ are calculated with the temperature parameter $t=T/T_c-1$ where $T_c$ the critical value of the temperature. Near the critical point, we find that the critical amplitude of $R_Nt^2$ and $K_Nt$ is $-\frac{1}{2}$ when $t\rightarrow0^+$, whereas $R_Nt^2\approx -\frac{1}{8}$ and $K_Nt\approx-\frac{1}{4}$ in the limit $t\rightarrow0^-$. These results not only hold for the four dimensional charged AdS black hole, but also for the higher dimensional cases. Therefore, such universal properties will cast new insight into the thermodynamic geometries and black hole phase transitions. △ Less

Submitted 21 December, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 18 pages, 3 figures, 3 tables, Accepted by PRD

Journal ref: Phys. Rev. D 102, 124066 (2020)

Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2

Authors: Tiantian Jia, Jesús Carrete, Georg K. H. Madsen, Yongsheng Zhang, Suhuai Wei

Abstract: The thermoelectric properties of the three pyrite-type IIB-VIA2 dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated and compared with those of the prototype ZnSe2 in order to optimize their thermoelectric properties. Using the phonon Boltzmann transport equation, we find that they all have ultralow lattice thermal conductivities. By analyzing their vibrational properties, these… ▽ More The thermoelectric properties of the three pyrite-type IIB-VIA2 dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated and compared with those of the prototype ZnSe2 in order to optimize their thermoelectric properties. Using the phonon Boltzmann transport equation, we find that they all have ultralow lattice thermal conductivities. By analyzing their vibrational properties, these are attributed to soft phonon modes derived from the loosely bound rattling-like metal atoms and to strong anharmonicities caused by the vibrations of all atoms perpendicular to the strongly bound nonmetallic dimers. Additionally, by correlating those properties along the series, we elucidate a number of chemical trends. We find that heavier atom masses, larger atomic displacement parameters and longer bond lengths between metal and nonmetal atoms can be beneficial to the looser rattling of the metal atoms and therefore lead to softer phonon modes, and that stronger nonmetallic dimer bonds can boost the anharmonicities, both leading to lower thermal conductivities. Furthermore, we find that all three compounds have complex energy isosurfaces at valence and conduction band edges that simultaneously allow for large density-of-states effective masses and small conductivity effective masses for both p-type and n-type carriers. Consequently, the calculated thermoelectric figures of merit (ZT), can reach large values both for p-type and n-type doping. Our study illustrates the effects of rattling-like metal atoms and localized nonmetallic dimers on the thermal transport properties and the importance of different carrier effective masses to electrical transport properties in these pyrite-type dichalcogenides, which can be used to predict and optimize the thermoelectric properties of other thermoelectric compounds in the future. △ Less

Submitted 7 March, 2022; v1 submitted 12 May, 2020; originally announced May 2020.

Theoretical investigation on magnetic property of monolayer CrI3 from microscale to macroscale

Authors: Songrui Wei, Dingchen Wang, Yadong Wei, Han Zhang

Abstract: Magnetic two-dimensional (2D) materials have received tremendous attention recently due to its potential application in spintronics and other magnetism related fields. To our knowledge, five kinds of 2D materials with intrinsic magnetism have been synthesized in experiment. They are CrI3, Cr2Ge2Te6, FePS3, Fe3GeTe2 and VSe2. Apart from the above intrinsic magnetic 2D materials, many strategies hav… ▽ More Magnetic two-dimensional (2D) materials have received tremendous attention recently due to its potential application in spintronics and other magnetism related fields. To our knowledge, five kinds of 2D materials with intrinsic magnetism have been synthesized in experiment. They are CrI3, Cr2Ge2Te6, FePS3, Fe3GeTe2 and VSe2. Apart from the above intrinsic magnetic 2D materials, many strategies have also been proposed to induce magnetism in normal 2D materials such as atomic modification, spin valve and proximity effect. Various devices have also been designed to fulfill the basic functions of spintronics: inducing spin, manipulating spin and detecting spin. △ Less

Submitted 1 April, 2020; originally announced April 2020.

Comments: 5 pages, 6 figures, 2 tables

Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride

Authors: Hemendra Nath Jaiswal, Maomao Liu, Simran Shahi, Sichen Wei, Jihea Lee, Anindita Chakravarty, Yutong Guo, Ruiqiang Wang, Jung Mu Lee, Chaoran Chang, Yu Fu, Ripudaman Dixit, Xiaochi Liu, Cheng Yang, Fei Yao, Huamin Li

Abstract: Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator… ▽ More Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and demonstrate a novel diode-like selective enhancement of the carrier transport through it. Compared to the conventional MS contact, the MIS contact dominated by both thermionic emission and quantum tunneling can significantly reduce the contact resistance and boost the electron transport from the semiconductor to the metal, but has negligible effects on the electron transport oppositely. We also investigate the negative barrier height with the concept of carrier collection barrier, and show its critical role at the drain end for determining the overall transistor performance. △ Less

Submitted 21 July, 2020; v1 submitted 28 March, 2020; originally announced March 2020.

Comments: Currently under review

Weyl Superconductivity in UTe2

Authors: Ian M. Hayes, Di S. Wei, Tristin Metz, Jian Zhang, Yun Suk Eo, Sheng Ran, Shanta R. Saha, John Collini, Nicholas P. Butch, Daniel F. Agterberg, Aharon Kapitulnik, Johnpierre Paglione

Abstract: The search for a material platform for topological quantum computation has recently focused on unconventional superconductors. Such material systems, where the superconducting order parameter breaks a symmetry of the crystal point group, are capable of hosting novel phenomena, including emergent Majorana quasiparticles. Unique among unconventional superconductors is the recently discovered UTe2, w… ▽ More The search for a material platform for topological quantum computation has recently focused on unconventional superconductors. Such material systems, where the superconducting order parameter breaks a symmetry of the crystal point group, are capable of hosting novel phenomena, including emergent Majorana quasiparticles. Unique among unconventional superconductors is the recently discovered UTe2, where spin-triplet superconductivity emerges from a paramagnetic normal state. Although UTe2 could be considered a relative of a family of known ferromagnetic superconductors, the unique crystal structure of this material and experimentally suggested zero Curie temperature pose a great challenge to determining the symmetries, magnetism, and topology underlying the superconducting state. These emergent properties will determine the utility of UTe2 for future spintronics and quantum information applications. Here, we report observations of a non-zero polar Kerr effect and of two transitions in the specific heat upon entering the superconducting state, which together show that the superconductivity in UTe2 is characterized by an order parameter with two components that breaks time reversal symmetry. These data allow us to place firm constraints on the symmetries of the order parameter, which strongly suggest that UTe2 is a Weyl superconductor that hosts chiral Fermi arc surface states. △ Less

Submitted 6 February, 2020; originally announced February 2020.

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

Authors: Maomao Liu, Sichen Wei, Simran Shahi, Hemendra Nath Jaiswal, Paolo Paletti, Sara Fathipour, Maja Remskar, Jun Jiao, Wansik Hwang, Fei Yao, Huamin Li

Abstract: High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly dis… ▽ More High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1 - 3 orders of magnitude, and consequently elevate electron mobilities by 5 - 7 times higher. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Comments: Under review

Strain tunable pudding-mold-type band structure and thermoelectric properties of SnP$_3$ monolayer

Authors: Shasha Wei, Cong Wang, Guoying Gao

Abstract: Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP3 monolayer. Our first-principles c… ▽ More Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP3 monolayer. Our first-principles calculations combined with Boltzmann transport theory indicate that SnP3 monolayer has the pudding-mold-type valence band structure, giving rise to a large p-type Seebeck coefficient and a high p-type power factor. The compressive biaxial strain can decrease the energy gap and result in the metallicity. In contrast, the tensile biaxial strain increases the energy gap, and increases the n-type Seebeck coefficient and decreases the n-type electrical conductivity. Although the lattice thermal conductivity becomes larger at a tensile biaxial strain due to the increased maximum frequency of the acoustic phonon modes and the increased phonon group velocity, it is still low, only e.g. 3.1 W/(mK) at room temperature with the 6% tensile biaxial strain. Therefore, SnP3 monolayer is a good thermoelectric material with low lattice thermal conductivity even at the 6% tensile strain, and the tensile strain is beneficial to the increase of the n-type Seebeck coefficient. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Comments: 16 pages, 6 figures. Submitted to J. Phys.: Condens. Matter