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Unusual Electron-Phonon Interactions in Highly Anisotropic Two-Dimensional $Ta_2$$Ni_3$$Te_5$
Authors:
Fei Wang,
Qiaohui Zhou,
Hong Tang,
Fan Zhang,
Yanxing Li,
Ana M Sanchez,
Keyuan Bai,
Sidra Younus,
Chih-Kang Shih,
Adrienn Ruzsinszky,
Xin Lu,
Jiang Wei
Abstract:
Electron-phonon interactions (EPIs) represent a fundamental cornerstone of condensed matter physics, commanding persistent attention due to their pivotal role in driving novel quantum phenomena within low-dimensional materials. Here, we unveil unusual anisotropic electron-phonon coupling behaviors in quasi-one-dimensional $Ta_2$$Ni_3$$Te_5$ nano-flakes through a powerful combination of angle-resol…
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Electron-phonon interactions (EPIs) represent a fundamental cornerstone of condensed matter physics, commanding persistent attention due to their pivotal role in driving novel quantum phenomena within low-dimensional materials. Here, we unveil unusual anisotropic electron-phonon coupling behaviors in quasi-one-dimensional $Ta_2$$Ni_3$$Te_5$ nano-flakes through a powerful combination of angle-resolved polarized Raman spectroscopy and density functional perturbation theory (DFPT). High-resolution transmission electron microscopy and scanning tunneling microscopy directly visualize the pronounced quasi-one-dimensional atomic chains within the crystal structure, establishing a structural foundation for the observed anisotropic interactions. Our Raman investigations reveal remarkable polarization-dependent responses in $A_g$ phonon modes that deviate significantly from conventional behavior, which our theoretical analyses attribute to complex anisotropic electron-photon and electron-phonon interactions. Temperature-dependent Raman measurements further uncover an intriguing phonon decay mechanism involving both three- and four-phonon processes, with the latter showing significant contributions in some modes - a possible manifestation of strong anisotropic electron-phonon interactions. Beyond revealing $Ta_2$$Ni_3$$Te_5$ as an exceptional platform for exploring anisotropic EPIs, this work demonstrates that integrating angle-resolved polarized Raman spectroscopy with DFPT calculations offers a powerful methodology for investigating electron-phonon interactions in emerging low-dimensional quantum materials.
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Submitted 6 June, 2025;
originally announced June 2025.
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Atomic-scale mapping of interfacial phonon modes in epitaxial YBa2Cu3O7-δ / (La,Sr)(Al,Ta)O3 thin films: The role of surface phonons
Authors:
Joaquin E. Reyes Gonzalez,
Charles Zhang,
Rainni K. Chen,
John Y. T. Wei,
Maureen J. Lagos
Abstract:
We investigate the behavior of phonons at the epitaxial interface between YBa2Cu3O7-δ thin film and (La,Sr)(Al,Ta)O3 substrate using vibrational electron energy loss spectroscopy. Interfacial phonon modes with different degrees of scattering localization were identified. We find evidence that surface contributions from the surrounding environment can impose additional scattering modulation into lo…
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We investigate the behavior of phonons at the epitaxial interface between YBa2Cu3O7-δ thin film and (La,Sr)(Al,Ta)O3 substrate using vibrational electron energy loss spectroscopy. Interfacial phonon modes with different degrees of scattering localization were identified. We find evidence that surface contributions from the surrounding environment can impose additional scattering modulation into local EELS measurements at the interface. A method to remove those contributions is then used to isolate the phonon information at the interface. This work unveils interfacial phonon modes in a high-Tc cuprate superconductor, that are not accessible with traditional phonon spectroscopy techniques, and provides a method for probing interfacial phonons in complex oxide heterostructures.
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Submitted 2 June, 2025;
originally announced June 2025.
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Diverse edge states of nanoribbons and excitonic insulator states of the monolayer Ta2Ni3Te5
Authors:
Hong Tang,
Jiang Wei,
Gabor I. Csonka,
Adrienn Ruzsinszky
Abstract:
Ta2Ni3Te5, a layered transition metal chalcogenide with quasi-one-dimensional electronic states, exhibits rich topological and correlated phenomena. Using first-principles calculations, we explore Ta2Ni3Te5 nanoribbons, demonstrating tunable electronic and magnetic properties-ranging from metallic to semimetallic and semiconducting (band gaps of 29.7-60.8 meV), and from ferromagnetic to antiferrom…
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Ta2Ni3Te5, a layered transition metal chalcogenide with quasi-one-dimensional electronic states, exhibits rich topological and correlated phenomena. Using first-principles calculations, we explore Ta2Ni3Te5 nanoribbons, demonstrating tunable electronic and magnetic properties-ranging from metallic to semimetallic and semiconducting (band gaps of 29.7-60.8 meV), and from ferromagnetic to antiferromagnetic-controlled by edge (Ni or Ta), ribbon width, and H/F saturation. Additionally, GW and Bethe-Salpeter equation (BSE) calculations, complemented by metaGGA-based modified BSE, reveal that the Ta2Ni3Te5 monolayer is an excitonic insulator, with an exciton binding energy exceeding its band gap. These diverse properties position Ta2Ni3Te5 nanoribbons and monolayers as promising candidates for nanoelectronics, spintronics, and optoelectronics, motivating further experimental exploration.
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Submitted 28 May, 2025;
originally announced May 2025.
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Probing orbital magnetism of a kagome metal CsV3Sb5 by a tuning fork resonator
Authors:
Hengrui Gui,
Lin Yang,
Xiaoyu Wang,
Dong Chen,
Zekai Shi,
Jiawen Zhang,
Jia Wei,
Keyi Zhou,
Walter Schnelle,
Yongjun Zhang,
Yu Liu,
Alimamy F. Bangura,
Ziqiang Wang,
Claudia Felser,
Huiqiu Yuan,
Lin Jiao
Abstract:
The recently discovered kagome metal CsV$_3$Sb$_5$ exhibits a complex phase diagram that encompasses frustrated magnetism, topological charge density wave (CDW), and superconductivity. One CDW state that breaks time-reversal symmetry was proposed in this compound, while the exact nature of the putative magnetic state remains elusive. To examine the thermodynamic state of CsV$_3$Sb$_5$ and assess t…
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The recently discovered kagome metal CsV$_3$Sb$_5$ exhibits a complex phase diagram that encompasses frustrated magnetism, topological charge density wave (CDW), and superconductivity. One CDW state that breaks time-reversal symmetry was proposed in this compound, while the exact nature of the putative magnetic state remains elusive. To examine the thermodynamic state of CsV$_3$Sb$_5$ and assess the character of the associated magnetism, we conducted tuning fork resonator measurements of magnetotropic susceptibility over a broad range of angles, magnetic fields, and temperature. We found a cascade of phase transition in the CDW phase. Of particular interest is a highly anisotropic magnetic structure that arises below about 30~K, with a magnetic moment along the $c$-axis that has an extremely small magnitude. This magnetic state demonstrates extremely slow dynamics and small saturate field, all suggest that electronic phase below 30~K breaks time reversal symmetry and has an unconventional origin.
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Submitted 8 May, 2025;
originally announced May 2025.
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Liquid crystalline structures formed by sphere-rod amphiphilic molecules in solvents
Authors:
Nilanthi P. Haputhanthrige,
Yifan Zhou,
Jingfan Wei,
Min Gao,
Tianbo Liu,
Oleg D. Lavrentovich
Abstract:
Self-assembly of amphiphilic molecules is an important phenomenon attracting a broad range of research. In this work, we study the self-assembly of KTOF4 sphere-rod amphiphilic molecules in mixed water-dioxane solvents. The molecules are of a T-shaped geometry, comprised of a hydrophilic spherical Keggin-type cluster attached by a flexible bridge to the center of a hydrophobic rod-like oligodialky…
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Self-assembly of amphiphilic molecules is an important phenomenon attracting a broad range of research. In this work, we study the self-assembly of KTOF4 sphere-rod amphiphilic molecules in mixed water-dioxane solvents. The molecules are of a T-shaped geometry, comprised of a hydrophilic spherical Keggin-type cluster attached by a flexible bridge to the center of a hydrophobic rod-like oligodialkylfluorene (OF), which consists of four OF units. Transmission electron microscopy (TEM) uncovers self-assembled spherical structures of KTOF4 in dilute solutions. These spheres are filled with smectic-like layers of KTOF4 separated by layers of the solution. There are two types of layer packings: (i) concentric spheres and (ii) flat layers. The concentric spheres form when the dioxane volume fraction in the solution is 35-50 vol%. The flat layers are formed when the dioxane volume fraction is either below (20 and 30 vol%.) or above (55 and 60 vol%.) the indicated range. The layered structures show no in-plane orientational order and thus resemble thermotropic smectic A liquid crystals and their lyotropic analogs. The layered packings reveal edge and screw dislocations. Evaporation of the solvent produces a bulk birefringent liquid crystal phase with textures resembling the ones of uniaxial nematic liquid crystals. These findings demonstrate that sphere-rod molecules produce a variety of self-assembled structures that are controlled by the solvent properties.
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Submitted 10 February, 2025;
originally announced February 2025.
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Stacking effects on magnetic, vibrational, and optical properties of CrSBr bilayers
Authors:
Huicong Li,
Yali Yang,
Zhonghao Xia,
Yateng Wang,
Jiacheng Wei,
Jiangang He,
Rongming Wang
Abstract:
The van der Waals layered semiconductor CrSBr, which exhibits A-type antiferromagnetism and a relatively high Néel temperature, has been successfully exfoliated into atomically thin sheets. In this study, we investigate the structural, lattice dynamical, electronic, magnetic, and optical properties of four distinct stacking structures of CrSBr bilayers using first-principles calculations and Monte…
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The van der Waals layered semiconductor CrSBr, which exhibits A-type antiferromagnetism and a relatively high Néel temperature, has been successfully exfoliated into atomically thin sheets. In this study, we investigate the structural, lattice dynamical, electronic, magnetic, and optical properties of four distinct stacking structures of CrSBr bilayers using first-principles calculations and Monte Carlo simulations. Our findings show that though the most energetically favorable bilayer structure retains the stacking pattern of the bulk counterpart, three other high-symmetry stacking structures can be achieved by sliding one of the layers along three distinct directions, with energy costs comparable to that observed in MoS$_2$ bilayer. All these four bilayers exhibit semiconductor behavior with A-type antiferromagnetic ordering, similar to the bulk material, and demonstrate closely aligned Néel temperatures. Moreover, these bilayers exhibit relatively low lattice thermal conductivities, pronounced anisotropy, and a strong dependence on stacking patterns. This behavior is attributed to significant phonon-phonon scattering arising from avoided crossings between acoustic and optical phonons, as well as the presence of flat optical phonon bands in the low-frequency region. While the electronic structures and optical properties of these bilayers show weak dependence on the stacking pattern for antiferromagnetic ordering, they undergo significant changes for ferromagnetic ordering, influencing the band gap, valence and conduction band splitting, and effective mass. Furthermore, we found that antiferromagnetic ordering can transition to ferromagnetic under intense visible light illumination. Thus, the integration of layer stacking and visible light illumination offers an effective means to control the heat transfer, magnetic, and optical properties of CrSBr bilayers.
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Submitted 5 February, 2025;
originally announced February 2025.
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Rashba effect modulation in two-dimensional A2B2Te6 (A = Sb, Bi; B = Si, Ge) materials via charge transfer
Authors:
Haipeng Wu,
Qikun Tian,
Jinghui Wei,
Ziyu Xing,
Guangzhao Qin,
Zhenzhen Qin
Abstract:
Designing two-dimensional (2D) Rashba semiconductors, exploring the underlying mechanism of Rashba effect, and further proposing efficient and controllable approaches are crucial for the development of spintronics. On the basis of first-principles calculations, we here theoretically design all possible types (common, inverse, and composite) of Janus structures and successfully achieve numerous ide…
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Designing two-dimensional (2D) Rashba semiconductors, exploring the underlying mechanism of Rashba effect, and further proposing efficient and controllable approaches are crucial for the development of spintronics. On the basis of first-principles calculations, we here theoretically design all possible types (common, inverse, and composite) of Janus structures and successfully achieve numerous ideal 2D Rashba semiconductors from a series of five atomic-layer A2B2Te6 (A = Sb, Bi; B = Si, Ge) materials. Considering the different Rashba constant αR and its modulation trend under external electric field, we comprehensively analyze the intrinsic electric field Ein in terms of work function, electrostatic potential, dipole moment, and inner charge transfer. Inspired by the quantitative relationship between charge transfer and the strength of Ein and even the αR, we propose a straightforward strategy of introducing a single adatom onto the surface of 2D monolayer to introduce and modulate the Rashba effect. Lastly, we also examine the growth feasibility and electronic structures of the Janus Sb2Ge2Se3Te3 system and Janus-adsorbed systems on a 2D BN substrate. Our work not only conducts a detailed analysis of A2B2Te6-based Rashba systems, but also proposes a new strategy for efficiently and controllably modulating the αR through the reconfiguration of charge transfer.
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Submitted 9 January, 2025;
originally announced January 2025.
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Reproducible Monolayer MoS2 Devices Free of Resist Contamination by Gold Mask Lithography
Authors:
Yumeng Liu,
Yizhuo Wang,
Zhengfang Fan,
Jianyong Wei,
Shuwen Guo,
Zhijuan Su,
Yaping Dan
Abstract:
Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce surface contamination to 2D materials, leading to poor electrical contacts when metals are deposited. In this work, we present a novel fabrication method using gold as a mask for patterning and etching, which protects 2D materials from…
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Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce surface contamination to 2D materials, leading to poor electrical contacts when metals are deposited. In this work, we present a novel fabrication method using gold as a mask for patterning and etching, which protects 2D materials from contamination in the metal contact region. This technique enabled the fabrication of monolayer MoS2 transistors with clean gold contacts. Additionally, we achieved MoS2 devices with Ohmic contacts, mass-produced traditional lithography and gold mask lithography devices (100 of each), with the latter having a much higher current statistical variance than the former, which demonstrated the effectiveness of this method for contamination-free 2D transistors and potential applications in integrated circuits
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Submitted 4 November, 2024;
originally announced November 2024.
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Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4-x) family
Authors:
Jinghui Wei,
Qikun Tian,
XinTing Xu,
Guangzhao Qin,
Xu Zuo,
Zhenzhen Qin
Abstract:
The Rashba effect in Janus structures, accompanied by nontrivial topology, plays an important role in spintronics and even photovoltaic applications. Herein, through first-principles calculations, we systematically investigate the geometric stability and electronic structures of 135 kinds of Janus MAA'ZxZ'(4-x) family derived from two-dimensional MA2Z4 (M=Mg, Ga, Sr; A=Al, Ga; Z=S, Se, Te) monolay…
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The Rashba effect in Janus structures, accompanied by nontrivial topology, plays an important role in spintronics and even photovoltaic applications. Herein, through first-principles calculations, we systematically investigate the geometric stability and electronic structures of 135 kinds of Janus MAA'ZxZ'(4-x) family derived from two-dimensional MA2Z4 (M=Mg, Ga, Sr; A=Al, Ga; Z=S, Se, Te) monolayers, and design numerous Rashba semiconductors and inversion-asymmetric topological insulators. Specifically, there are a total of 26 Rashba semiconductors with isolated spin splitting bands contributed by Se/Te-pz orbitals at conduction band minimum, and the magnitude of the Rashba constant correlates strongly with both the intrinsic electric field and the strength of spin-orbit coupling (SOC). As the atomic number increases, the bandgap of Janus MAA'ZxZ'(4-x) continually decreases until it shrinks to a point where, when SOC is considered, band inversion occurs, leading to a reopening of the bandgap with nontrivial topological phases. In conjunction with band inversion, pz orbitals near the Fermi level can introduce double Rashba splitting featuring a distinctive hybrid spin texture, which can be further effectively adjusted through small biaxial strains and show a continuous evolution of topological to non-topological accompanied by different spin textures. This work provides significant insights into Rashba and topology physics and further presents indispensable inversion asymmetry materials for the development of nonlinear optoelectronics.
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Submitted 10 April, 2025; v1 submitted 25 October, 2024;
originally announced October 2024.
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Domino-like magnetic phase transition induced by a bias voltage in FeRh thin film
Authors:
Huiliang Wu,
Jianbo Wang,
Chenbo Zhao,
Qingfeng Zhan,
Jiangtao Xue,
Senfu Zhang,
Jinwu Wei,
Xiangqian Wang,
Qingfang Liu
Abstract:
The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span about tens of thousands Oersted which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6*10^4 Oe to lower than 2*10^3 Oe at room temperature. Meanwhile, nonv…
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The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span about tens of thousands Oersted which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6*10^4 Oe to lower than 2*10^3 Oe at room temperature. Meanwhile, nonvolatile switchings between pure magnetic phases of FeRh at room temperature also can be realized by applying voltage pulses. The critical condition and phase diagram for domino-like MPTs are obtained in theory and our experiments support it well. Our works not only benefit the studies and applications of MPT-based devices but also are significant in the applications of the phase transition systems with resistance change.
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Submitted 1 December, 2024; v1 submitted 23 September, 2024;
originally announced September 2024.
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Enhanced Polarizability and Tunable Diamagnetic Shifts from Charged Localized Emitters in WSe2 on a Relaxor Ferroelectric
Authors:
Qiaohui Zhou,
Fei Wang,
Ali Soleymani,
Kenji Watanabe,
Takashi Taniguchi,
Jiang Wei,
Xin Lu
Abstract:
Strain modulation is a crucial way in engineering nanoscale materials. It is even more important for single photon emitters in layered materials, where strain can create quantum emitters and control their energies. Here we report the localized, charge-enhanced coupling between the charged localized emitters in monolayer tungsten diselenide (WSe2) to the piezoelectric relaxor ferroelectric substrat…
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Strain modulation is a crucial way in engineering nanoscale materials. It is even more important for single photon emitters in layered materials, where strain can create quantum emitters and control their energies. Here we report the localized, charge-enhanced coupling between the charged localized emitters in monolayer tungsten diselenide (WSe2) to the piezoelectric relaxor ferroelectric substrate. In addition to the strain effect, we observe a gigantic polarizability volume with the enhancement factor up to 1010. The enormous polarizability leads to a large Quantum-confined Stark shift under a small variation of electric field, indicating the potential of integrating layered materials with functional substrates for quantum sensing. We further demonstrate the tunable diamagnetic shift and g-factor with strain varying by ~0.05%, which confirms the existence of enhanced interaction between the localized oscillating dipoles and the ferroelectric domains. Our results signify the prospect of charged quantum emitters in layered materials for quantum sciences and technology.
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Submitted 27 December, 2024; v1 submitted 11 September, 2024;
originally announced September 2024.
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Tunable polar distortions and magnetism in Gd$_x$La$_{1-x}$PtSb epitaxial films
Authors:
Dongxue Du,
Cheyu Zhang,
Jingrui Wei,
Yujia Teng,
Konrad Genser,
Paul M. Voyles,
Karin M. Rabe,
Jason K. Kawasaki
Abstract:
Hexagonal $ABC$ intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of $BC$ atomic planes. We report the impact of isovalent lanthanide substitution on the buckling, structural phase transitions, and electronic and magnetic properties of Gd$_x$La$_{1-x}$PtSb films grown by molecular beam epitaxy (MBE) on c-plane sapph…
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Hexagonal $ABC$ intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of $BC$ atomic planes. We report the impact of isovalent lanthanide substitution on the buckling, structural phase transitions, and electronic and magnetic properties of Gd$_x$La$_{1-x}$PtSb films grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The Gd$_x$La$_{1-x}$PtSb films form a solid solution from x = 0 to 1 and retain the polar hexagonal structure ($P6_3 mc$) out to $x \leq 0.95$. With increasing $x$, the PtSb buckling increases and the out of plane lattice constant $c$ decreases due to the lanthanide contraction. While hexagonal LaPtSb is a highly conductive polar metal, the carrier density decreases with $x$ until an abrupt phase transition to a zero band overlap semimetal is found for cubic GdPtSb at $x=1$. The magnetic susceptibility peaks at small but finite $x$, which we attribute to Ruderman Kittel Kasuya Yosida (RKKY) coupling between localized $4f$ moments, whose concentration increases with $x$, and free carriers that decrease with $x$. Samples with $x\geq 0.3$ show antiferromagnetic Curie-Weiss behavior and a Neel temperature that increases with $x$. The Gd$_x$La$_{1-x}$PtSb system provides opportunities to dramatically alter the polar buckling and concentration of local $4f$ moments, for tuning chiral spin textures and topological phases.
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Submitted 15 August, 2024;
originally announced August 2024.
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High Performance MoS2 Phototransistors Photogated by PN Junction
Authors:
Seyed Saleh Mousavi Khaleghi,
Jianyong Wei,
Yumeng Liu,
Zhengfang Fan,
Kai Li,
Kenneth B. Crozier,
Yaping Dan
Abstract:
Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by integrating few-layer MoS2 on a PN junction formed in a silicon (Si) substrate. The photovoltage created in the PN junction under light illumination electrically ga…
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Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by integrating few-layer MoS2 on a PN junction formed in a silicon (Si) substrate. The photovoltage created in the PN junction under light illumination electrically gates the MoS2 channel, creating a strong photoresponse in MoS2. We present an analytical model for the photoresponse of our device and show that it is in good agreement with measured experimental photocurrent in MoS2 and photovoltage in the Si PN junction. This device structure separates light absorption and electrical response functions, which provides us an opportunity to design new types of photodetectors. For example, incorporating ferroelectric materials into the gate structure can produce a negative capacitance that boosts gate voltage, enabling low power, high sensitivity phototransistor; this, combined with separating light absorption and electrical functions, enables advanced high-performance photodetectors.
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Submitted 7 August, 2024;
originally announced August 2024.
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Real-space tilting method for atomic resolution STEM imaging of nanocrystalline materials
Authors:
Jiake Wei,
Zhangze Xu,
Wenjie Shen,
Bin Feng,
Ryo Ishikawa,
Naoya Shibata,
Yuichi Ikuhara,
Xuedong Bai
Abstract:
Atomic-resolution scanning transmission electron microscopy (STEM) characterization requires precise tilting of the specimen to high symmetric zone axis, which is usually processed in reciprocal space by following the diffraction patterns. However, for small-sized nanocrystalline materials, their diffraction patterns are too faint to guide the tilting process. Here, a simple and effective tilting…
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Atomic-resolution scanning transmission electron microscopy (STEM) characterization requires precise tilting of the specimen to high symmetric zone axis, which is usually processed in reciprocal space by following the diffraction patterns. However, for small-sized nanocrystalline materials, their diffraction patterns are too faint to guide the tilting process. Here, a simple and effective tilting method is developed based on the diffraction contrast change of the shadow image in the Ronchigram. We can calculate the misorientation angle of the specimen and tilt it to the zone axis based on the position of the shadow image with lowest intensity. This method requires no prior knowledge of the sample and the maximum misorientation angle we can correct is greater than +-6.9 degree with sub-mrad accuracy. It is processed in real space, without recording the diffraction patterns of the specimens, which can effectively apply to nanocrystalline materials. Combined with the scripting to control the microscope, we can automatically tilt the sample to the zone axis under low dose condition (<0.17 e-/A2/s), which could facilitate the imaging of beam sensitive materials such as zeolites or metal organic frameworks. This automated tilting method could contribute to the atomic-scale characterization of the nanocrystalline materials by STEM imaging.
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Submitted 2 June, 2024;
originally announced June 2024.
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Analytical photoresponses of Schottky contact MoS2 phototransistors
Authors:
Jianyong Wei,
Yumeng Liu,
Yizhuo Wang,
Kai Li,
Zhentao Lian,
Maosong Xie,
Xinhan Yang,
Seyed Saleh Mousavi Khaleghi,
Fuxing Dai,
Weida Hu,
Xuejiao Gao,
Rui Yang,
Yaping Dan
Abstract:
High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two misplaced assumptions. In this work, we established an explicit analytical device model for Schottky contact MoS2 phototransistors that fits well with experimental…
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High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two misplaced assumptions. In this work, we established an explicit analytical device model for Schottky contact MoS2 phototransistors that fits well with experimental data. From the fitting results, we found that the Richardson constant of the MoS2 Schottky contact is temperature dependent, indicating that the Schottky contacts for the 2D material is best described by the mixed thermionic emission and diffusion model. Based on this device model, we further established an analytical photoresponse for the few-layer MoS2 phototransistors, from which we found the voltage distribution on the two Schottky contacts and the channel, and extracted the minority carrier recombination lifetimes. The lifetimes are comparable with the values found from transient photoluminescence measurements, which therefore validates our analytical photoresponses for Schottky contact 2D semiconducting phototransistors.
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Submitted 25 May, 2024;
originally announced May 2024.
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Hierarchy of Exchange-Correlation Functionals in Computing Lattice Thermal Conductivities of Rocksalt and Zincblende Semiconductors
Authors:
Jiacheng Wei,
Zhonghao Xia,
Yi Xia,
Jiangang He
Abstract:
Lattice thermal conductivity ($κ_{\rm L}$) is a crucial characteristic of crystalline solids with significant implications for practical applications. While the higher order of anharmonicity of phonon gas model is commonly used for explaining extraordinary heat transfer behaviors in crystals, the impact of exchange-correlation (XC) functionals in DFT on describing anharmonicity has been largely ov…
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Lattice thermal conductivity ($κ_{\rm L}$) is a crucial characteristic of crystalline solids with significant implications for practical applications. While the higher order of anharmonicity of phonon gas model is commonly used for explaining extraordinary heat transfer behaviors in crystals, the impact of exchange-correlation (XC) functionals in DFT on describing anharmonicity has been largely overlooked. Most XC functionals in solids focus on ground state properties that mainly involve the harmonic approximation, neglecting temperature effects, and their reliability in studying anharmonic properties remains insufficiently explored. In this study, we systematically investigate the room-temperature $κ_{\rm L}$ of 16 binary compounds with rocksalt and zincblende structures using 8 XC functionals such as LDA, PBE, PBEsol, optB86b, revTPSS, SCAN, rSCAN, r$^2$SCAN in combination with three perturbation orders, including phonon within harmonic approximation (HA) plus three-phonon scattering (HA+3ph), phonon calculated using self-consistent phonon theory (SCPH) plus three-phonon scattering (SCPH+3ph), and SCPH phonon plus three- and four-phonon scattering (SCPH+3,4ph). Our results show that the XC functional exhibits strong entanglement with perturbation order and the mean relative absolute error (MRAE) of the computed $κ_{\rm L}$ is strongly influenced by both the XC functional and perturbation order, leading to error cancellation or amplification. The minimal (maximal) MRAE is achieved with revTPSS (rSCAN) at the HA+3ph level, SCAN (r$^2$SCAN) at the SCPH+3ph level, and PBEsol (rSCAN) at the SCPH+3,4ph level. Among these functionals, PBEsol exhibits the highest accuracy at the highest perturbation order. The SCAN-related functionals demonstrate moderate accuracy but are suffer from numerical instability and high computational costs.
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Submitted 9 April, 2024;
originally announced April 2024.
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Probing critical phenomena in open quantum systems using atom arrays
Authors:
Fang Fang,
Kenneth Wang,
Vincent S. Liu,
Yu Wang,
Ryan Cimmino,
Julia Wei,
Marcus Bintz,
Avery Parr,
Jack Kemp,
Kang-Kuen Ni,
Norman Y. Yao
Abstract:
At continuous phase transitions, quantum many-body systems exhibit scale-invariance and complex, emergent universal behavior. Most strikingly, at a quantum critical point, correlations decay as a power law, with exponents determined by a set of universal scaling dimensions. Experimentally probing such power-law correlations is extremely challenging, owing to the complex interplay between decoheren…
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At continuous phase transitions, quantum many-body systems exhibit scale-invariance and complex, emergent universal behavior. Most strikingly, at a quantum critical point, correlations decay as a power law, with exponents determined by a set of universal scaling dimensions. Experimentally probing such power-law correlations is extremely challenging, owing to the complex interplay between decoherence, the vanishing energy gap, and boundary effects. Here, we employ a Rydberg quantum simulator to adiabatically prepare critical ground states of both a one-dimensional ring and a two-dimensional square lattice. By accounting for and tuning the openness of our quantum system, which is well-captured by the introduction of a single phenomenological length scale, we are able to directly observe power-law correlations and extract the corresponding scaling dimensions. Moreover, in two dimensions, we observe a decoupling between phase transitions in the bulk and on the boundary, allowing us to identify two distinct boundary universality classes. Our work demonstrates that direct adiabatic preparation of critical states in quantum simulators can complement recent approaches to studying quantum criticality using the Kibble-Zurek mechanism or digital quantum circuits.
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Submitted 23 February, 2024;
originally announced February 2024.
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Optically and remotely controlling localization of exciton polariton condensates in a potential lattice
Authors:
Qiang Ai,
Jan Wingenbach,
Xinmiao Yang,
Jing Wei,
Zaharias Hatzopoulos,
Pavlos G. Savvidis,
Stefan Schumacher,
Xuekai Ma,
Tingge Gao
Abstract:
Exciton polaritons are inherently tunable systems with adjustable potential landscape. In this work we show that exciton polariton condensates can be selectively localized in a fixed optically induced periodic lattice with uniform potential depth, by judiciously controlling a second focused pump of very small size away from the lattice chain. Specifically, the localized polariton condensate can be…
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Exciton polaritons are inherently tunable systems with adjustable potential landscape. In this work we show that exciton polariton condensates can be selectively localized in a fixed optically induced periodic lattice with uniform potential depth, by judiciously controlling a second focused pump of very small size away from the lattice chain. Specifically, the localized polariton condensate can be tuned among different potential traps by adjusting the relative distance between the small pump spot and the potential lattice. The adjustment of the excitation position of the smaller pump spot and its combination with the fixed larger pump spot for the potential creation induce the mode selection determined by gain profile, group velocity, and potential distribution within the system. The localization of the exciton polariton condensate and its control are independent of the orientation of the potential lattice, thus, even in slightly disordered system, one can selectively excite such localized polariton condensates. Our results illuminate a path to the remote manipulation of exciton polariton bosonic condensates in fixed integrated photonic chips and circuits.
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Submitted 23 January, 2025; v1 submitted 7 January, 2024;
originally announced January 2024.
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Functional Group Induced Transformations in Stacking and Electron Structure in Mo2CTx/NiS Heterostructures
Authors:
Jiamin Liu,
Guo Li,
Xinxu Zhang,
Jiahao Wei,
Hui Jia,
Yulong Wu,
Changlong Liu,
Yonghui Li
Abstract:
The two-dimensional transition metal carbide/nitride family (MXenes) has garnered significant attention due to their highly customizable surface functional groups. Leveraging modern material science techniques, the customizability of MXenes can be enhanced further through the construction of associated heterostructures. As indicated by recent research, the Mo2CTx/NiS heterostructure has emerged as…
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The two-dimensional transition metal carbide/nitride family (MXenes) has garnered significant attention due to their highly customizable surface functional groups. Leveraging modern material science techniques, the customizability of MXenes can be enhanced further through the construction of associated heterostructures. As indicated by recent research, the Mo2CTx/NiS heterostructure has emerged as a promising candidate exhibiting superior physical and chemical application potential. The geometrical structure of Mo2CTx/NiS heterostructure is modeled and 6 possible configurations are validated by Density Functional Theory simulations. The variation in functional groups leads to structural changes in Mo2CTx/NiS interfaces, primarily attributed to the competition between van der Waals and covalent interactions. The presence of different functional groups results in significant band fluctuations near the Fermi level for Ni and Mo atoms, influencing the role of atoms and electron's ability to escape near the interface. This, in turn, modulates the strength of covalent interactions at the MXenes/NiS interface and alters the ease of dissociation of the MXenes/NiS complex. Notably, the Mo2CO2/NiS(P6_3/mmc) heterostructure exhibits polymorphism, signifying that two atomic arrangements can stabilize the structure. The transition process between these polymorphs is also simulated, further indicating the modulation of the electronic level of properties by a sliding operation.
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Submitted 27 October, 2023;
originally announced October 2023.
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Predicting emergence of crystals from amorphous matter with deep learning
Authors:
Muratahan Aykol,
Amil Merchant,
Simon Batzner,
Jennifer N. Wei,
Ekin Dogus Cubuk
Abstract:
Crystallization of the amorphous phases into metastable crystals plays a fundamental role in the formation of new matter, from geological to biological processes in nature to synthesis and development of new materials in the laboratory. Predicting the outcome of such phase transitions reliably would enable new research directions in these areas, but has remained beyond reach with molecular modelin…
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Crystallization of the amorphous phases into metastable crystals plays a fundamental role in the formation of new matter, from geological to biological processes in nature to synthesis and development of new materials in the laboratory. Predicting the outcome of such phase transitions reliably would enable new research directions in these areas, but has remained beyond reach with molecular modeling or ab-initio methods. Here, we show that crystallization products of amorphous phases can be predicted in any inorganic chemistry by sampling the crystallization pathways of their local structural motifs at the atomistic level using universal deep learning potentials. We show that this approach identifies the crystal structures of polymorphs that initially nucleate from amorphous precursors with high accuracy across a diverse set of material systems, including polymorphic oxides, nitrides, carbides, fluorides, chlorides, chalcogenides, and metal alloys. Our results demonstrate that Ostwald's rule of stages can be exploited mechanistically at the molecular level to predictably access new metastable crystals from the amorphous phase in material synthesis.
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Submitted 2 October, 2023;
originally announced October 2023.
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Electromotive force and magnetization process of a superconducting traveling-wave flux pump
Authors:
Wei Wang,
Jiafu Wei,
Chenghuai Wu,
Guangtong Ma,
Hong Li,
Hanxin Ye,
Yuntian Zhang
Abstract:
Understanding and controlling the motion of superconducting vortices has been a key issue in condensed matter physics and applied superconductivity. Here we present a method for macroscopically manipulating the vortices based on travelling wave flux pump to accurately output industrial-scale DC current into high-temperature superconducting (HTS) magnets. DC magnetic fields are used to adjust the p…
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Understanding and controlling the motion of superconducting vortices has been a key issue in condensed matter physics and applied superconductivity. Here we present a method for macroscopically manipulating the vortices based on travelling wave flux pump to accurately output industrial-scale DC current into high-temperature superconducting (HTS) magnets. DC magnetic fields are used to adjust the polarity of the vortices and thus modulate the direction of the output current, which demonstrates that the DC current of the flux pump originates from the motional electromotive force ( e.m.f. ) other than the induced e.m.f.. In addition, applying different strengths of DC fields can modulate the magnitude of the output current. Further numerical simulation suggests how the flux inside the superconducting tape is controlled by different applied fields. We build a controlled flux flow model to correctly explain the behavior of vortices controlled by the flux pump, and how the motional e.m.f. is created by manipulating the vortices. Based on the method, we achieve high precision regulation of output current using adaptive control of the DC magnetic field, allowing the flux pump to output DC current just as accurate as a typical commercial power supply. This work advances the technic for macroscopic manipulation of vortices.
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Submitted 4 June, 2023;
originally announced June 2023.
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A Method to Decipher "Genome" from Interatomic Cohesion in the Exploration for a "Central Dogma" Replacement in Material Science
Authors:
Xinxu Zhang,
Jiahao Wei,
Hui Jia,
Jiamin Liu,
Guo Li,
Ling Liu,
Yulong Wu,
Changlong Liu,
Xiao-Dong Zhang,
Yonghui Li
Abstract:
In the ball-stick model, interatomic cohesions are considered "sticks". But enormous details and features of the "sticks" are usually oversimplified as indexed quantities or equivocated as geometry characteristics. These indexed quantities or geometry characteristics not only limit the explanatory capability to a few chemical/physical aspects but also eliminate generativity for expected resemblanc…
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In the ball-stick model, interatomic cohesions are considered "sticks". But enormous details and features of the "sticks" are usually oversimplified as indexed quantities or equivocated as geometry characteristics. These indexed quantities or geometry characteristics not only limit the explanatory capability to a few chemical/physical aspects but also eliminate generativity for expected resemblance. And these limitations can be related to the information loss during the conversion. Herein, inspired by the central dogma, a framework is introduced to compact interatomic cohesions into a detailed residue-by-residue "genome" with matched encoding/decoding tools. The framework fuses the quantum mechanical aspects, auto feature extraction, nanostructures and/or simulations, and generative models. As a proof of concept, the realization introduced in this work adopted bosonic/fermionic features, an autoencoder with image recognition processes, Density Functional Theory simulations, and a thiolate-protected gold nanocluster dataset. After repetitive modeling, validating, and analysis based on 26,528 simulated interatomic images, the interatomic cohesion can be almost losslessly encoded into an 8-value-genome, and the genome encoder-decoder pair is also obtained. The model is then automatically extended into a generative model which converts any arbitrary 8-value-genome to a bond image.
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Submitted 7 February, 2025; v1 submitted 13 May, 2023;
originally announced May 2023.
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Surface step induced bending in two-dimensional oxide nanosheet
Authors:
Jiake Wei,
Masato Yoshiya,
Feng Bin,
Naoya Shibata,
Yuichi Ikuhara
Abstract:
The surface steps play dramatic roles in surface dominated processes and the related properties, in which these roles would be significantly enhanced for the low-dimensional nano or quantum materials since the ratio of surface atoms is largely increased. However, the atomic structures of surface steps in the nano/quantum systems are poorly understood because it is extremely difficult to controllab…
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The surface steps play dramatic roles in surface dominated processes and the related properties, in which these roles would be significantly enhanced for the low-dimensional nano or quantum materials since the ratio of surface atoms is largely increased. However, the atomic structures of surface steps in the nano/quantum systems are poorly understood because it is extremely difficult to controllably introduce these defects experimentally. Here, by utilizing the focused sub-Angstrom high energy electron beam induced atomic precise etching in a scanning transmission electron microscope, we fabricate MgO two-dimensional (100) nanosheet as thin as 2 atomic layers, and controllably introduced the surface steps in the nanosheet. It is found that the surface steps could bend the MgO nanosheet and such step-induced bending becomes more pronounced for the nanosheet with less layer numbers. We reveal that the bending of the nanosheets is originated from the step induced step force and the reduced bending stiffness in the nanosheet system.
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Submitted 12 March, 2023;
originally announced March 2023.
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Dilemma in All-optical Characterization of Single-layer NiI2 Multiferroics
Authors:
Yucheng Jiang,
Yangliu Wu,
Jinlei Zhang,
Jingxuan Wei,
Bo Peng,
Cheng-Wei Qiu
Abstract:
Matters Arising in Nature on "Evidence for a single layer van der Waals multiferroic". The search for two dimensional multiferroic materials is an exciting yet challenging endeavor. Recently, Song reported the exciting discovery of type II multiferroic order in an antiferromagnetic (AFM) NiI2 single layer and concluded the ferroelectric (FE) polarization induced by a helical magnetic order1. Their…
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Matters Arising in Nature on "Evidence for a single layer van der Waals multiferroic". The search for two dimensional multiferroic materials is an exciting yet challenging endeavor. Recently, Song reported the exciting discovery of type II multiferroic order in an antiferromagnetic (AFM) NiI2 single layer and concluded the ferroelectric (FE) polarization induced by a helical magnetic order1. Their finding was presented from all optical experimental evidence, based on the methods of second harmonic generation (SHG) and linear dichroism (LD). However, the all optical characterizations cannot serve as unanimous evidence of the FE existence, particularly in conjunction with magnetic orders in a single layer NiI2 multiferroic. We have designed and built a Magneto-Optical-Electric Joint-measurement Scanning Imaging system (MOEJSI) for identification of two-dimensional vdW multiferroic.
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Submitted 20 June, 2023; v1 submitted 26 February, 2023;
originally announced February 2023.
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Scale invariance in X-ray flares of gamma-ray bursts
Authors:
Jun-Jie Wei
Abstract:
X-ray flares are generally believed to be produced by the reactivation of the central engine, and may have the same energy dissipation mechanism as the prompt emission of gamma-ray bursts (GRBs). X-ray flares can therefore provide important clues to understanding the nature of the central engines of GRBs. In this work, we study for the first time the physical connection between differential size a…
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X-ray flares are generally believed to be produced by the reactivation of the central engine, and may have the same energy dissipation mechanism as the prompt emission of gamma-ray bursts (GRBs). X-ray flares can therefore provide important clues to understanding the nature of the central engines of GRBs. In this work, we study for the first time the physical connection between differential size and return distributions of X-ray flares of GRBs with known redshifts. We find that the differential distributions of duration, energy, and waiting time can be well fitted by a power-law function. In particular, the distributions for the differences of durations, energies, and waiting times at different times (i.e., the return distributions) well follow a $q$-Gaussian form. The $q$ values in the $q$-Gaussian distributions remain nearly steady for different temporal interval scales, implying a scale-invariant structure of GRB X-ray flares. Moreover, we verify that the $q$ parameters are related to the power-law indices $α$ of the differential size distributions, characterized as $q=(α+2)/α$. These statistical features can be well explained within the physical framework of a self-organizing criticality system.
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Submitted 17 January, 2023; v1 submitted 17 December, 2022;
originally announced December 2022.
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Hysteretic Electronic Phase Transitions in Correlated Charge-Density-Wave State of 1T-TaS2
Authors:
Geng Yanyan,
Lei Le,
Dong Haoyu,
Guo Jianfeng,
Mi Shuo,
Li Yan,
Huang Li,
Pang Fei,
Xu Rui,
Zhou Weichang,
Liu Zheng,
Ji Wei,
Cheng Zhihai
Abstract:
Recently, many exotic electronic states, such as quantum spin liquid (QSL) and superconductivity (SC), have been extensively discovered and introduced in layered transition metal dichalcogenides 1T-TaS2 by controlling their complex correlated charge-density-wave (CDW) states. However, few studies have focused on its hysteretic electronic phase transitions based on the in-depth discussion of the de…
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Recently, many exotic electronic states, such as quantum spin liquid (QSL) and superconductivity (SC), have been extensively discovered and introduced in layered transition metal dichalcogenides 1T-TaS2 by controlling their complex correlated charge-density-wave (CDW) states. However, few studies have focused on its hysteretic electronic phase transitions based on the in-depth discussion of the delicate interplay among temperature-dependent electronic interactions. Here, we reported a sequence of spatial electronic phase transitions in the hysteresis temperature range of 1T-TaS2 via variable-temperature scanning tunneling microscopy (VT-STM). The emergence, evolution, coexistence, and separation of diverse novel electronic states within the commensurate CDW/triclinic CDW (CCDW/TCDW) phase are investigated in detail through the warming/cooling process. These novel emergent electronic states can be attributed to the delicate temperature-dependent competition and/or cooperation of interlayer interactions, intralayer electron-electron correlation, and electron-phonon (e-ph) coupling of 1T-TaS2. Our results not only provide a novel insight to understand the hysteretic electronic phase transitions of correlated CDW state, but also pave a way to realize more exotic quantum states by accurately and effectively controlling various interactions in correlated materials.
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Submitted 7 December, 2022;
originally announced December 2022.
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Nonreciprocal Charge and Spin Transport Induced by Non-Hermitian Skin Effect in Mesoscopic Heterojunctions
Authors:
H. Geng,
J. Y. Wei,
M. H. Zou,
L. Sheng,
Wei Chen,
D. Y. Xing
Abstract:
The pursuit of the non-Hermitian skin effect (NHSE) in various physical systems is of great research interest. Compared with recent progress in non-electronic systems, the implementation of the NHSE in condensed matter physics remains elusive. Here, we show that the NHSE can be engineered in the mesoscopic heterojunctions (system plus reservoir) in which electrons in two channels of the system mov…
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The pursuit of the non-Hermitian skin effect (NHSE) in various physical systems is of great research interest. Compared with recent progress in non-electronic systems, the implementation of the NHSE in condensed matter physics remains elusive. Here, we show that the NHSE can be engineered in the mesoscopic heterojunctions (system plus reservoir) in which electrons in two channels of the system moving towards each other have asymmetric coupling to those of the reservoir. This makes electrons in the system moving forward and in the opposite direction have unequal lifetimes, and so gives rise to a point-gap spectral topology. Accordingly, the electron eigenstates exhibit NHSE under the open boundary condition, consistent with the description of the generalized Brillouin zone. Such a reservoir-engineered NHSE visibly manifests itself as the nonreciprocal charge current that can be probed by the standard transport measurements. Further, we generalize the scenario to the spin-resolved NHSE, which can be probed by the nonreciprocal spin transport. Our work opens a new research avenue for implementing and detecting the NHSE in electronic mesoscopic systems, which will lead to interesting device applications.
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Submitted 19 January, 2023; v1 submitted 21 September, 2022;
originally announced September 2022.
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Charge carriers trapping by the full-configuration defects in metal halide perovskites quantum dots
Authors:
Xiao-Yi Liu,
Yu Cui,
Jia-Pei Deng,
Yi-Yan Liu,
Xu-Fei Ma,
Yu-Xuan Hou,
Jun-Ye Wei,
Zhi-Qing Li,
Zi-Wu Wang
Abstract:
Metal halide perovskites quantum dots (MHPQDs) have aroused enormous interesting in the photovoltaic and photoelectric because of their marvelous properties and size characteristics. However, one of key problems that how to systematically analyze charge carriers trapping by different defects is still a challenge task. Here, we study nonradiation multiphonon processes of the charge carrier trapping…
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Metal halide perovskites quantum dots (MHPQDs) have aroused enormous interesting in the photovoltaic and photoelectric because of their marvelous properties and size characteristics. However, one of key problems that how to systematically analyze charge carriers trapping by different defects is still a challenge task. Here, we study nonradiation multiphonon processes of the charge carrier trapping by various defects in MHPQDs based on the well-known Huang-Rhys model, in which a method of fullconfiguration defect, including different defect species with variable depth and lattice relaxation strength, is developed by introducing a localization parameter in the quantum defect model. With the help of this method, these fastest trapping channels for charge carriers transferring from the quantum dot ground state to different defects are found. Furthermore, the dependences of the trapping time on the radius of quantum dot, the defect depth and temperature are given. These results not only enrich the knowledge of charge carrier trapping processes by defects, but enlighten the designs of MHPQDs-based photovoltaic and photoelectric devices.
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Submitted 26 July, 2022;
originally announced July 2022.
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Benchmark tests of atom segmentation deep learning models with a consistent dataset
Authors:
Jingrui Wei,
Ben Blaiszik,
Aristana Scourtas,
Dane Morgan,
Paul M. Voyles
Abstract:
The information content of atomic resolution scanning transmission electron microscopy (STEM) images can often be reduced to a handful of parameters describing each atomic column, chief amongst which is the column position. Neural networks (NNs) are a high performance, computationally efficient method to automatically locate atomic columns in images, which has led to a profusion of NN models and a…
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The information content of atomic resolution scanning transmission electron microscopy (STEM) images can often be reduced to a handful of parameters describing each atomic column, chief amongst which is the column position. Neural networks (NNs) are a high performance, computationally efficient method to automatically locate atomic columns in images, which has led to a profusion of NN models and associated training datasets. We have developed a benchmark dataset of simulated and experimental STEM images and used it to evaluate the performance of two sets of recent NN models for atom location in STEM images. Both models exhibit high performance for images of varying quality from several different crystal lattices. However, there are important differences in performance as a function of image quality, and both models perform poorly for images outside the training data, such as interfaces with large difference in background intensity. Both the benchmark dataset and the models are available using the Foundry service for dissemination, discovery, and reuse of machine learning models.
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Submitted 20 July, 2022;
originally announced July 2022.
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Discovery of an electronic crystal in a cuprate Mott insulator
Authors:
Mingu Kang,
Charles Zhang,
Enrico Schierle,
Stephen McCoy,
Jiarui Li,
Ronny Sutarto,
Feizhou He,
Andreas Suter,
Thomas Prokscha,
Zaher Salman,
Eugen Weschke,
Shane Cybart,
John Y. T. Wei,
Riccardo Comin
Abstract:
Copper oxide high temperature superconductors universally exhibit multiple forms of electronically ordered phases that break the native translational symmetry of the CuO2 planes. The interplay between these orders and the superconducting ground state, as well as how they arise through doping a Mott insulator, is essential to decode the mechanisms of high-temperature superconductivity. Over the yea…
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Copper oxide high temperature superconductors universally exhibit multiple forms of electronically ordered phases that break the native translational symmetry of the CuO2 planes. The interplay between these orders and the superconducting ground state, as well as how they arise through doping a Mott insulator, is essential to decode the mechanisms of high-temperature superconductivity. Over the years, various forms of electronic liquid crystal phases including charge/spin stripes and incommensurate charge-density-waves (CDWs) were found to emerge out of a correlated metallic ground state in underdoped cuprates. Early theoretical studies also predicted the emergence of a Coulomb-frustrated 'charge crystal' phase in the very lightly-doped, insulating limit of the CuO2 planes. Here, we use resonant X-ray scattering, electron transport, and muon spin rotation measurements to fully resolve the electronic and magnetic ground state and search for signatures of charge order in very lightly hole-doped cuprates from the RBa2Cu3O7-d family (RBCO; R: Y or rare earth). X-ray scattering data from RBCO films reveal a breaking of translational symmetry more pervasive than was previously known, extending down to the Mott limit. The ordering vector of this charge crystal state is linearly connected to the charge-density-waves of underdoped RBCO, suggesting that the former phase is a precursor to the latter as hole doping is increased. Most importantly, the coexistence of charge and spin order in RBCO suggests that this electronic symmetry-breaking state is common to the CuO2 planes in the very lightly-doped regime. These findings bridge the gap between the Mott insulating state and the underdoped metallic state and underscore the prominent role of Coulomb-frustrated electronic phase separation among all cuprates.
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Submitted 16 March, 2022;
originally announced March 2022.
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In-plane epitaxy strain tuning intralayer and interlayer magnetic couplings in CrSe2 and CrTe2 mono- and bi-layers
Authors:
Wu Linlu,
Zhou Linwei,
Zhou Xieyu,
Wang Cong,
Ji Wei
Abstract:
Mismatched lattice-constants at a van-der-Waals epitaxy interface often introduce in-plane strains to the lattice of the epitaxial layer, termed epitaxy-strain, where the strains do not follow the intra-layer Poisson's relation. Here, we presented the magnetic phase diagrams of the CrSe2 and CrTe2 mono- and bi-layers under epitaxy-strain up to 8 %, as predicted using density-functional-theory calc…
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Mismatched lattice-constants at a van-der-Waals epitaxy interface often introduce in-plane strains to the lattice of the epitaxial layer, termed epitaxy-strain, where the strains do not follow the intra-layer Poisson's relation. Here, we presented the magnetic phase diagrams of the CrSe2 and CrTe2 mono- and bi-layers under epitaxy-strain up to 8 %, as predicted using density-functional-theory calculations. They show that the in-plane epitaxy-strain manipulates either the intra- or inter-layer magnetism of them. The in-plane strain varies the interlayer distance, defined using an inter-layer Poisson's ratio, which governs the inter-layer magnetism in two opposite ways depending on the in-plane magnetism. The tunability of the intra-layer magnetism is a result of competing intra-layer Cr-Cr super-exchange interactions. A graphene substrate was introduced to examine the validity of our diagrams in practice. Our work also gives a tentative explanation on the controversially reported magnetizations in CrSe2 and CrTe2 epitaxial mono- or bi-layers under epitaxy-strains.
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Submitted 24 February, 2022;
originally announced February 2022.
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DASP: Defect and Dopant ab-initio Simulation Package
Authors:
Menglin Huang,
Zhengneng Zheng,
Zhenxing Dai,
Xinjing Guo,
Shanshan Wang,
Lilai Jiang,
Jinchen Wei,
Shiyou Chen
Abstract:
In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) car…
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In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases and calculation of the energy above convex hull when calculating the elemental chemical potential that stabilizes compound semiconductors, so it can perform high-throughput prediction of thermodynamic stability of multinary compounds. DASP calls the ab-initio softwares to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different structure configurations and charge states, based on which the defect formation energies and transition energy levels are calculated and the corrections for electrostatic potential alignment and image charge interaction can be included. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and different growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum, defect-related radiative and non-radiative carrier capture cross sections, and recombination lifetime of non-equilibrium carriers.
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Submitted 6 January, 2022;
originally announced January 2022.
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Dynamic Transport Characteristics of Side-Coupled Double Quantum-Impurity Systems
Authors:
YiJie Wang,
JianHua Wei
Abstract:
A systematic study is made on the time-dependent dynamic transport characteristics of the side-coupled double quantum-impurity system based on the hierarchical equations of motion. It is found that the transport current behaves like a single quantum dot when the coupling strength is low during tunneling or coulomb coupling. The dynamic current oscillates due to the temporal coherence of the electr…
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A systematic study is made on the time-dependent dynamic transport characteristics of the side-coupled double quantum-impurity system based on the hierarchical equations of motion. It is found that the transport current behaves like a single quantum dot when the coupling strength is low during tunneling or coulomb coupling. The dynamic current oscillates due to the temporal coherence of the electron tunneling device only when the tunneling transition is coupled. The oscillation frequency of the transport current is related to the step voltage applied by the lead, while the $T$, e-e interaction $U$ and the bandwidth $W$ have little influence. The amplitude of the current oscillation exists in positive correlation with $W$ and negative correlation with $U$. With the increase in coupling $t_{12}$ between impurities, the ground state of the system changes from a Kondo singlet of one impurity to a spin-singlet of two impurities. Moreover, lowering the temperature could promote the Kondo effect to intensify the oscillation of the dynamic current. When only the coulomb transition is coupled, it is found that the two split-off Hubbard peaks move upward and have different interference effects on the Kondo peak at the Fermi surface with the increase in $U_{12}$, from the dynamics point of view.
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Submitted 15 December, 2021;
originally announced December 2021.
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Local large temperature difference and ultra-wideband photothermoelectric response of the silver nanostructure film/carbon nanotube film heterostructure
Authors:
Bocheng Lv,
Weidong Wu,
Yan Xie,
Jia-Lin Zhu,
Yang Cao,
Wanyun Ma,
Ning Yang,
Weidong Chu,
Jinquan Wei,
Jia-Lin Sun
Abstract:
Photothermoelectric materials have important applications in many fields. Here, we joined a silver nanostructure film (AgNSF) and a carbon nanotube film (CNTF) by van der Waals force to form a AgNSF/CNTF heterojunction, which shows excellent photothermal and photoelectric conversion properties. The local temperature difference and the output photovoltage increase rapidly when the heterojunction is…
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Photothermoelectric materials have important applications in many fields. Here, we joined a silver nanostructure film (AgNSF) and a carbon nanotube film (CNTF) by van der Waals force to form a AgNSF/CNTF heterojunction, which shows excellent photothermal and photoelectric conversion properties. The local temperature difference and the output photovoltage increase rapidly when the heterojunction is irradiated by lasers with wavelengths ranging from ultraviolet to terahertz. The maximum of the local temperature difference reaches 205.9 K, which is significantly higher than that of other photothermoelectric materials reported in literatures. The photothermal and photoelectric responsivity depend on the wavelength of lasers, which are 175-601 K/W and 9.35-40.4 mV/W, respectively. We demonstrate that light absorption of the carbon nanotube is enhanced by local surface plasmons, and the output photovoltage is dominated by Seebeck effect. The AgNSF/CNTF heterostructure can be used as high-efficiency sensitive photothermal materials or as ultra-wideband fast-response photoelectric material.
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Submitted 15 October, 2021;
originally announced October 2021.
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Similar Scale-invariant Behaviors between Soft Gamma-ray Repeaters and An Extreme Epoch from FRB 121102
Authors:
Jun-Jie Wei,
Xue-Feng Wu,
Zi-Gao Dai,
Fa-Yin Wang,
Pei Wang,
Di Li,
Bing Zhang
Abstract:
The recent discovery of a Galactic fast radio burst (FRB) associated with a hard X-ray burst from the soft gamma-ray repeater (SGR) J1935+2154 has established the magnetar origin of at least some FRBs. In this work, we study the statistical properties of soft gamma-/hard X-ray bursts from SGRs 1806--20 and J1935+2154 and of radio bursts from the repeating FRB 121102. For SGRs, we show that the pro…
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The recent discovery of a Galactic fast radio burst (FRB) associated with a hard X-ray burst from the soft gamma-ray repeater (SGR) J1935+2154 has established the magnetar origin of at least some FRBs. In this work, we study the statistical properties of soft gamma-/hard X-ray bursts from SGRs 1806--20 and J1935+2154 and of radio bursts from the repeating FRB 121102. For SGRs, we show that the probability density functions for the differences of fluences, fluxes, and durations at different times have fat tails with a $q$-Gaussian form. The $q$ values in the $q$-Gaussian distributions are approximately steady and independent of the temporal interval scale adopted, implying a scale-invariant structure of SGRs. These features indicate that SGR bursts may be governed by a self-organizing criticality (SOC) process, confirming previous findings. Very recently, 1652 independent bursts from FRB 121102 have been detected by the Five-hundred-meter Aperture Spherical radio Telescope (FAST). Here we also investigate the scale-invariant structure of FRB 121102 based on the latest observations of FAST, and show that FRB 121102 and SGRs share similar statistical properties. Given the bimodal energy distribution of FRB 121102 bursts, we separately explore the scale-invariant behaviors of low- and high-energy bursts of FRB 121102. We find that the $q$ values of low- and high-energy bursts are different, which further strengthens the evidence of the bimodality of the energy distribution. Scale invariance in both the high-energy component of FRB 121102 and SGRs can be well explained within the same physical framework of fractal-diffusive SOC systems.
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Submitted 11 September, 2021; v1 submitted 27 July, 2021;
originally announced July 2021.
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An Overview of the Compton Scattering Calculation
Authors:
Chen-Kai Qiao,
Jian-Wei Wei,
Lin Chen
Abstract:
The Compton scattering process plays significant roles in atomic and molecular physics, condensed matter physics, nuclear physics and material science. It could provide useful information on the electromagnetic interaction between light and matter. Several aspects of many-body physics, such us electronic structures, electron momentum distributions, many-body interactions of bound electrons, \emph{…
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The Compton scattering process plays significant roles in atomic and molecular physics, condensed matter physics, nuclear physics and material science. It could provide useful information on the electromagnetic interaction between light and matter. Several aspects of many-body physics, such us electronic structures, electron momentum distributions, many-body interactions of bound electrons, \emph{etc}, can be revealed by Compton scattering experiments. In this work, we give a review on \emph{ab initio} calculation of Compton scattering process. Several approaches, including the free electron approximation (FEA), impulse approximation (IA), incoherent scattering function / incoherent scattering factor (ISF) and scattering matrix (SM) are focused in this work. The main features and available ranges for these approaches are discussed. Furthermore, we also briefly introduce the databases and applications for Compton scattering.
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Submitted 10 May, 2021; v1 submitted 8 March, 2021;
originally announced March 2021.
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THz Acoustic Attenuations of Glycerol by Pump Probe Technique
Authors:
Fan Jun Wei,
Kung-Hsuan Lin
Abstract:
The coherent acoustic waves can be created by InGaN double quantum wells. We measured the signals information of the coherent acoustic waves at the interface of GaN/glycerol to obtain the attenuations of glycerol at 295 K and 120 K by the femto-sec laser pump probe technique in THz regime. The attenuations of glycerol are calculated by using the acoustic mismatch model (AMM) through the complex ac…
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The coherent acoustic waves can be created by InGaN double quantum wells. We measured the signals information of the coherent acoustic waves at the interface of GaN/glycerol to obtain the attenuations of glycerol at 295 K and 120 K by the femto-sec laser pump probe technique in THz regime. The attenuations of glycerol are calculated by using the acoustic mismatch model (AMM) through the complex acoustic impedance. We compared pump probe results with inelastic neutron scattering (INS) and inelastic X ray scattering (IXS), found they are matched within 0.5 THz at room temperature. The glycerol attenuations are found increasing monotonically to 1.75x10^8 m^(-1) and 1.3x10^8 m^(-1) till 0.5 THz by the pump probe technique at 295 K and 120 K, respectively.
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Submitted 17 February, 2021;
originally announced February 2021.
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All-optical helicity-independent switching state diagram in GdFeCo alloys
Authors:
Jiaqi Wei,
Boyu Zhang,
Michel Hehn,
Wei Zhang,
Gregory Malinowski,
Yong Xu,
Weisheng Zhao,
Stéphane Mangin
Abstract:
Ultra-fast magnetization switching induced by a single femtosecond laser pulse, under no applied magnetic field has attracted a lot of attention during the last 10 years because of its high potential for low energy and ultra-fast memory applications. Single-pulse helicity-independent switching has mostly been demonstrated for Gd based materials. It is now important to optimize the pulse duration a…
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Ultra-fast magnetization switching induced by a single femtosecond laser pulse, under no applied magnetic field has attracted a lot of attention during the last 10 years because of its high potential for low energy and ultra-fast memory applications. Single-pulse helicity-independent switching has mostly been demonstrated for Gd based materials. It is now important to optimize the pulse duration and the energy needed to switch a GdFeCo magnet depending on the alloy thickness, concentration. Here we experimentally report state diagrams showing the magnetic state obtained after one single pulse depending on the laser pulse duration and fluence for various GdFeCo thin films with different compositions and thicknesses. We demonstrate that these state diagrams share similar characteristics: the fluence window for switching narrows for longer pulse duration and for the considered pulse duration range the critical fluence for single pulse switching increases linearly as a function of the pulse duration while the critical fluence required for creating a multidomain state remains almost constant. Calculations based on the atomistic spin model qualitatively reproduce the experimental state diagrams and their evolution. By studying the effect of the composition and the thickness on the state diagram, we demonstrated that the best energy efficiency and the longest pulse duration for switching are obtained for concentration around the magnetic compensation.
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Submitted 14 December, 2020; v1 submitted 7 December, 2020;
originally announced December 2020.
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Synthesis of narrow SnTe nanowires using alloy nanoparticles
Authors:
Pengzi Liu,
Hyeuk Jin Han,
Julia Wei,
David J. Hynek,
James L. Hart,
Myung Geun Han,
Christie J. Trimble,
James R. Williams,
Yimei Zhu,
Judy J. Cha
Abstract:
Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. Making SnTe into nanowires further induces novel electronic states due to one-dimensional (1D) confinement effects. Thus, for transport measurements, SnTe nanowires must be made narrow…
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Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. Making SnTe into nanowires further induces novel electronic states due to one-dimensional (1D) confinement effects. Thus, for transport measurements, SnTe nanowires must be made narrow in their diameters to ensure the 1D confinement and phase coherence of the topological surface electrons. This study reports a facile growth method to produce narrow SnTe nanowires with a high yield using alloy nanoparticles as growth catalysts. The average diameter of the SnTe nanowires grown using the alloy nanoparticles is 85 nm, nearly a factor of three reduction from the previous average diameter of 240 nm using gold nanoparticles as growth catalysts. Transport measurements reveal the effect of the nanowire diameter on the residual resistance ratio and magnetoresistance. Particularly, the ferroelectric transition temperature for SnTe is observed to change systematically with the nanowire diameter. In situ cryogenic cooling of narrow SnTe nanowires in a transmission electron microscope directly reveals the cubic to rhombohedral structural transition, which is associated with the ferroelectric transition. Thus, these narrow SnTe nanowires represent a model system to study electronic states arising from the 1D confinement, such as 1D topological superconductivity as well as a potential multi-band superconductivity.
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Submitted 15 October, 2020;
originally announced October 2020.
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The Lightest 2D Nanomaterial: Freestanding Ultrathin Li Nanosheets by in-situ Electron Microscopy
Authors:
Muhua Sun,
Nore Stolte,
Jianlin Wang,
Jiake Wei,
Pan Chen,
Yu Zhao,
Zhi Xu,
Wenlong Wang,
Ding Pan,
Xuedong Bai
Abstract:
Lithium (Li) is the simplest metal and the lightest solid element. Here we report the first demonstration of controlled growth of two-dimensional (2D) ultrathin Li nanosheets with large lateral dimensions up to several hundreds of nanometres and thickness limited to just a few nanometres by in-situ transmission electron microscopy (TEM). The nanoscale dynamics of nanosheets growth were unravelled…
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Lithium (Li) is the simplest metal and the lightest solid element. Here we report the first demonstration of controlled growth of two-dimensional (2D) ultrathin Li nanosheets with large lateral dimensions up to several hundreds of nanometres and thickness limited to just a few nanometres by in-situ transmission electron microscopy (TEM). The nanoscale dynamics of nanosheets growth were unravelled by real-time TEM imaging, which, in combination with density function theory (DFT) calculations indicates that the growth of bcc structured Li into 2D nanosheets is a consequence of kinetic control as mediated by preferential oxidization of the (111) surfaces due to the trace amount of O2 (~10-6 Pa) within TEM chamber. The plasmonic optical properties of the as-grown Li nanosheets were probed by cathodoluminescence (CL) spectroscopy equipped within TEM, and a broadband visible emission was observed that contains contributions of both in-plane and out-of-plane plasmon resonance modes.
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Submitted 8 October, 2020;
originally announced October 2020.
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Highly flexible electromagnetic interference shielding films based on ultrathin Ni/Ag composites on paper substrates
Authors:
Xiangli Liu,
Ziheng Ye,
Ling Zhang,
Pengdong Feng,
Jian Shao,
Mao Zhong,
Zheng Chen,
Lijie Ci,
Peng He,
Hongjun Ji,
Jun Wei,
Mingyu Li,
Weiwei Zhao
Abstract:
Highly flexible electromagnetic interference (EMI) shielding material with excellent shielding performance is of great significance to practical applications in next-generation flexible devices. However, most EMI materials suffer from insufficient flexibility and complicated preparation methods. In this study, we propose a new scheme to fabricate a magnetic Ni particle/Ag matrix composite ultrathi…
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Highly flexible electromagnetic interference (EMI) shielding material with excellent shielding performance is of great significance to practical applications in next-generation flexible devices. However, most EMI materials suffer from insufficient flexibility and complicated preparation methods. In this study, we propose a new scheme to fabricate a magnetic Ni particle/Ag matrix composite ultrathin film on a paper surface. For a ~2 micro meter thick film on paper, the EMI shielding effectiveness (SE) was found to be 46.2 dB at 8.1 GHz after bending 200,000 times over a radius of ~2 mm. The sheet resistance (Rsq) remained lower than 2.30 Ohm after bending 200,000 times. Contrary to the change in Rsq, the EMI SE of the film generally increased as the weight ratio of Ag to Ni increased, in accordance with the principle that EMI SE is positively related with an increase in electrical conductivity. Desirable EMI shielding ability, ultrahigh flexibility, and simple processing provide this material with excellent application prospects.
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Submitted 11 May, 2020;
originally announced May 2020.
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Determination of spin-orbit torque efficiencies in heterostructures with in-plane magnetic anisotropy
Authors:
Yan-Ting Liu,
Tian-Yue Chen,
Tzu-Hsiang Lo,
Tsung-Yu Tsai,
Shan-Yi Yang,
Yao-Jen Chang,
Jeng-Hua Wei,
Chi-Feng Pai
Abstract:
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic t…
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It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Hall effective fields and unidirectional magnetoresistance that will modify their anisotropic magnetoresistance behavior. We also demonstrate that by analyzing the response of anisotropic magnetoresistance under such influences, one can directly and electrically probe magnetization switching driven by the spin-orbit torque, even in micron-sized devices. This pump-probe method allows for efficient and direct determination of key parameters from spin-orbit torque switching events without lengthy device fabrication processes.
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Submitted 20 February, 2020;
originally announced February 2020.
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Effect of the interaction strength and anisotropy on the diffusio-phoresis of spherical colloids
Authors:
Jiachen Wei,
Simón Ramírez-Hinestrosa,
Jure Dobnikar,
Daan Frenkel
Abstract:
Gradients in temperature, concentration or electrostatic potential cannot exert forces on a bulk fluid; they can, however, exert forces on a fluid in a microscopic boundary layer surrounding a (nano)colloidal solute, resulting in so-called phoretic flow. Here we present a simulation study of phoretic flow around a spherical colloid held fixed in a concentration gradient. We show that the resulting…
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Gradients in temperature, concentration or electrostatic potential cannot exert forces on a bulk fluid; they can, however, exert forces on a fluid in a microscopic boundary layer surrounding a (nano)colloidal solute, resulting in so-called phoretic flow. Here we present a simulation study of phoretic flow around a spherical colloid held fixed in a concentration gradient. We show that the resulting flow velocity depends non-monotonically on the strength of the colloid-fluid interaction. The reason for this non-monotonic dependence is that solute particles are effectively trapped in a shell around the colloid and cannot contribute to diffusio-phoresis. We also observe that the flow depends sensitively on the anisotropy of solute-colloid interaction.
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Submitted 22 January, 2020;
originally announced January 2020.
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Nondegenerate Two-Photon Absorption in GaAs/AlGaAs Multiple Quantum Well Waveguides
Authors:
Nicholas Cox,
Junxiong Wei,
Himansu Pattanaik,
Thamer Tabbakh,
Simon-Pierre Gorza,
David Hagan,
Eric W. Van Stryland
Abstract:
We present femtosecond pump-probe measurements of the nondegenerate (1960$\,$nm excitation and 1176--1326$\,$nm probe) two-photon absorption spectra of 8 $\,$nm GaAs/12$\,$nm Al$_{0.32}$Ga$_{0.68}$As quantum well waveguides. Experiments were performed with light pulses co-polarized normal and tangential to the quantum well plane. The results are compared to perturbative calculations of transition…
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We present femtosecond pump-probe measurements of the nondegenerate (1960$\,$nm excitation and 1176--1326$\,$nm probe) two-photon absorption spectra of 8 $\,$nm GaAs/12$\,$nm Al$_{0.32}$Ga$_{0.68}$As quantum well waveguides. Experiments were performed with light pulses co-polarized normal and tangential to the quantum well plane. The results are compared to perturbative calculations of transition rates between states determined by the $\mathbf{k}\cdot\mathbf{p}$ method with an 8 or 14 band basis. We find excellent agreement between theory and experiment for normal polarization, then use the model to support predictions of orders-of-magnitude enhancement of nondegenerate two-photon absorption as one constituent photon energy nears an intersubband resonance.
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Submitted 3 December, 2019;
originally announced December 2019.
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Bias-induced chiral current and topological blockadein triple quantum dots
Authors:
YuanDong Wang,
ZhenGang Zhu,
JianHua Wei,
YiJing Yan
Abstract:
We theoretically investigate the quantum transport properties of a triangular triple quantum dot (TTQD) ring connected with two reservoirs by means of analytical derivation and accurate hierarchical-equations-of-motion calculation. A bias-induced chiral current in the absence of magnetic field is firstly demonstrated, which results from that the coupling between spin gauge field and spin current i…
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We theoretically investigate the quantum transport properties of a triangular triple quantum dot (TTQD) ring connected with two reservoirs by means of analytical derivation and accurate hierarchical-equations-of-motion calculation. A bias-induced chiral current in the absence of magnetic field is firstly demonstrated, which results from that the coupling between spin gauge field and spin current in the nonequilibrium TTQD induces a scalar spin chirality that lifts the chiral degeneracy and thus the time inversion symmetry. The chiral current is proved to oscillate with bias within the Coulomb blockade regime, which opens a possibility to control the chiral spin qubit by use of purely electrical manipulations. Then, a topological blockade of the transport current due to the localization of chiral states is elucidated by spectral function analysis. Finally, as a measurable character, the magnetoelectric susceptibility in our system is found about two orders of magnitude larger than that in a typical magnetoelectric material at low temperature.
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Submitted 2 December, 2019; v1 submitted 27 November, 2019;
originally announced November 2019.
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Quantum oscillation and unusual protection mechanism of the surface state in nonsymmorphic semimetals
Authors:
Xue Liu,
Chunlei Yue,
Sergey V. Erohin,
Yanglin Zhu,
Abin Joshy,
Jinyu Liu,
Ana M Sanchez,
David Graf,
Pavel B. Sorokin,
Zhiqiang Mao,
Jin Hu,
Jiang Wei
Abstract:
In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at…
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In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at the surface, a new surface band can emerge in nonsymmorphic topological semimetals. The symmetry reduction at the surface lifts the bulk band degeneracies, produces an unusual floating surface band with trivial topology. Here, we report quantum transport probing to ZrSiSe thin flakes and reveal transport signatures of this new surface state. Remarkably, though topologically trivial, such a surface band exhibit substantial two dimensional Shubnikov de Haas quantum oscillations with high mobility, which signifies a new protection mechanism and may open applications for surface-related devices.
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Submitted 16 June, 2020; v1 submitted 15 November, 2019;
originally announced November 2019.
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High yield production of ultrathin fibroid semiconducting nanowire of Ta$_2$Pd$_3$Se$_8$
Authors:
Xue Liu,
Sheng Liu,
Liubov Yu. Antipina,
Yibo Zhu,
Jinliang Ning,
Jinyu Liu,
Chunlei Yue,
Abin Joshy,
Yu Zhu,
Jianwei Sun,
Ana M Sanchez,
Pavel B. Sorokin,
Zhiqiang Mao,
Qihua Xiong,
Jiang Wei
Abstract:
Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with…
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Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta2Pd3Se8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy and transport measurements reveal the as-fabricated Ta2Pd3Se8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.
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Submitted 15 November, 2019;
originally announced November 2019.
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Charge effects in donor doped perovskite ferroelectrics
Authors:
J. Liu,
L. Liu,
J. Zhang,
L. Jin,
D. Wang,
J. Wei,
Z. -G. Ye,
C. -L. Jia
Abstract:
Doping is a widely used method to tune physical properties of ferroelectric perovskites. Since doping can induce charges due to the substitution of certain elements, charge effects shall be considered in doped samples. To understand how charges can affect the system, we incorporate the dipole-charge interaction into our simulations, where the pinched hysteresis loops can well be reproduced. Two ch…
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Doping is a widely used method to tune physical properties of ferroelectric perovskites. Since doping can induce charges due to the substitution of certain elements, charge effects shall be considered in doped samples. To understand how charges can affect the system, we incorporate the dipole-charge interaction into our simulations, where the pinched hysteresis loops can well be reproduced. Two charge compensation models are proposed and numerically investigated to understand how lanthanum doping affect BaTiO$_{3}$'s ferroelectric phase transition temperature and hysteresis loop. The consequences of the two charge compensation models are compared and discussed.
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Submitted 7 October, 2019; v1 submitted 24 September, 2019;
originally announced September 2019.
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Linear dichroism infrared resonance in over-, under-, and optimally-doped cuprate superconductors
Authors:
A. Mukherjee,
J. Seo,
M. M. Arik,
H. Zhang,
C. Zhang,
T. Kirzhner,
D. K. George,
A. G. Markelz,
N. P. Armitage,
G. Koren,
J. Y. T. Wei,
J. Cerne
Abstract:
By measuring the polarization changes in THz, infrared, and visible radiation over an extended energy range (3-2330 meV), we observe symmetry-breaking in cuprate high temperature superconductors over wide energy, doping, and temperature ranges. We measure the polarization rotation and ellipticity of transmitted radiation though thin films as the sample is rotated. We observe a two-fold rotational…
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By measuring the polarization changes in THz, infrared, and visible radiation over an extended energy range (3-2330 meV), we observe symmetry-breaking in cuprate high temperature superconductors over wide energy, doping, and temperature ranges. We measure the polarization rotation and ellipticity of transmitted radiation though thin films as the sample is rotated. We observe a two-fold rotational symmetry in the Faraday angle, which is associated with linear dichroism (LD) and occurs when electromagnetic radiation polarized along one direction is absorbed more strongly than radiation polarized in the perpendicular direction. Such polarization anisotropies can be generally associated with symmetry breakings. We measure the amplitude of the LD signal and study its temperature, energy, and doping dependence. The LD signal shows a resonant behavior with a peak in the few hundred meV range, which is coincident with the mid-infrared optical feature that has been associated with the formation of the pseudogap state. The strongest LD signal is found in under-doped films, although it is also observed in optimally- and over-doped samples. The LD signal is consistent with nematic charge ordering as well as novel magnetoelectric effects.
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Submitted 19 July, 2019;
originally announced July 2019.
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Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2
Authors:
Xiao Wang,
Jian Tang,
Xiuxin Xia,
Congli He,
Junwei Zhang,
Yizhou Liu,
Caihua Wan,
Chi Fang,
Chenyang Guo,
Wenlong Yang,
Yao Guang,
Xiaomin Zhang,
Hongjun Xu,
Jinwu Wei,
Mengzhou Liao,
Xiaobo Lu,
Jiafeng Feng,
Xiaoxi Li,
Yong Peng,
Hongxiang Wei,
Rong Yang,
Dongxia Shi,
Xixiang Zhang,
Zheng Han,
Zhidong Zhang
, et al. (3 additional authors not shown)
Abstract:
The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in order to utilize 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we…
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The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in order to utilize 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.
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Submitted 15 February, 2019;
originally announced February 2019.