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Probing and Tuning Strain-localized Exciton Emission in 2D Material Bubbles at Room Temperature
Authors:
Junze Zhou,
John Thomas,
Thomas P. Darlington,
Edward S. Barnard,
Atsushi Taguchi,
Adam Schwartzberg,
Alexander Weber-Bargioni
Abstract:
Excitons in 2D material bubbles-nanoscale deformations in atomically thin materials, typically exhibiting a dome-like shape-are confined by the strain effect, exhibiting extraordinary emission properties, such as single photon generation, enhanced light emission, and spectrally tunable excitonic states. While the strain profiles of these bubbles have been extensively studied, this work provides an…
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Excitons in 2D material bubbles-nanoscale deformations in atomically thin materials, typically exhibiting a dome-like shape-are confined by the strain effect, exhibiting extraordinary emission properties, such as single photon generation, enhanced light emission, and spectrally tunable excitonic states. While the strain profiles of these bubbles have been extensively studied, this work provides an approach (1) to directly visualize the associated exciton properties, revealing an intrinsic emission wavelength shift of approximately 40 nm, and (2) actively modify local strain, enabling further exciton emission tuning over a range of 50 nm. These are achieved by emission mapping and nanoindentation using a dielectric near-field probe, which enables the detection of local emission spectra and emission lifetimes within individual bubbles. Statistical analysis of 67 bubbles uncovers an emission wavelength distribution centered around 780 nm. Furthermore, saturation behavior in the power-dependent studies and the associated lifetime change reveal the localized nature of the strain-induced states. These findings provide direct insights into the strain-localized emission dynamics in bubbles and establish a robust framework for non-destructive, reversible, and predictable nanoscale emission control, presenting a potential avenue for developing next-generation tunable quantum optical sources.
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Submitted 19 May, 2025;
originally announced May 2025.
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Probing Plexciton Emission from 2D Materials on Gold Nanotrenches
Authors:
Junze Zhou,
P. A. D. Gonçalves,
Fabrizio Riminucci,
Scott Dhuey,
Edward Barnard,
Adam Schwartzberg,
F. Javier García de Abajo,
Alexander Weber-Bargioni
Abstract:
Probing strongly coupled quasiparticle excitations at their intrinsic length scales offers unique insights into their properties and facilitates the design of devices with novel functionalities. In this work, we investigate the formation and emission characteristics of plexcitons, arising from the interaction between surface plasmons in narrow gold nanotrenches and excitons in monolayer WSe2. We s…
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Probing strongly coupled quasiparticle excitations at their intrinsic length scales offers unique insights into their properties and facilitates the design of devices with novel functionalities. In this work, we investigate the formation and emission characteristics of plexcitons, arising from the interaction between surface plasmons in narrow gold nanotrenches and excitons in monolayer WSe2. We study this strong plasmon-exciton coupling in both the far-field and the near-field. Specifically, we observe a Rabi splitting in the far-field reflection spectra of about 80 meV under ambient conditions, consistent with our theoretical modeling. Using a custom-designed near-field probe, we find that plexciton emission originates predominantly from the lower-frequency branch, which we can directly probe and map the local field distribution. We precisely determine the plexciton extension, similar to the trench width, with nanometric precision via collecting spectra at controlled probe locations. Our work opens exciting prospects for nanoscale mapping and engineering of plexcitons in complex nanostructures with potential applications in nanophotonic devices, optoelectronics, and quantum electrodynamics in nanoscale cavities.
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Submitted 7 April, 2024;
originally announced April 2024.
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A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
Authors:
John C. Thomas,
Wei Chen,
Yihuang Xiong,
Bradford A. Barker,
Junze Zhou,
Weiru Chen,
Antonio Rossi,
Nolan Kelly,
Zhuohang Yu,
Da Zhou,
Shalini Kumari,
Edward S. Barnard,
Joshua A. Robinson,
Mauricio Terrones,
Adam Schwartzberg,
D. Frank Ogletree,
Eli Rotenberg,
Marcus M. Noack,
Sinéad Griffin,
Archana Raja,
David A. Strubbe,
Gian-Marco Rignanese,
Alexander Weber-Bargioni,
Geoffroy Hautier
Abstract:
Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in…
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Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co$_{\rm S}^{0}$) as very promising and fabricate it with scanning tunneling microscopy (STM). The Co$_{\rm S}^{0}$ electronic structure measured by STM agrees with first principles and showcases an attractive new quantum defect. Our work shows how HT computational screening and novel defect synthesis routes can be combined to design new quantum defects.
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Submitted 20 November, 2024; v1 submitted 14 September, 2023;
originally announced September 2023.
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Direct visualization of the charge transfer in Graphene/$α$-RuCl$_3$ heterostructure
Authors:
Antonio Rossi,
Riccardo Dettori,
Cameron Johnson,
Jesse Balgley,
John C. Thomas,
Luca Francaviglia,
Andreas K. Schmid,
Kenji Watanabe,
Takashi Taniguchi,
Matthew Cothrine,
David G. Mandrus,
Chris Jozwiak,
Aaron Bostwick,
Erik A. Henriksen,
Alexander Weber-Bargioni,
Eli Rotenberg
Abstract:
We investigate the electronic properties of a graphene and $α$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a c…
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We investigate the electronic properties of a graphene and $α$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy, low energy electron microscopy, and density functional theory (DFT) calculations we are able to provide a first direct visualization of the massive charge transfer from graphene to RuCl$_3$, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. The electronic band structure is compared to DFT calculations that confirm the occurrence of a Mott transition for RuCl$_3$. Finally, a measurement of spatially resolved work function allows for a direct estimate of the interface dipole between graphene and RuCl$_3$. The strong coupling between graphene and RuCl$_3$ could lead to new ways of manipulating electronic properties of two-dimensional lateral heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power opto-electronics devices.
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Submitted 29 May, 2023; v1 submitted 26 May, 2023;
originally announced May 2023.
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Phason-mediated interlayer exciton diffusion in WS2/WSe2 moiré heterostructure
Authors:
Antonio Rossi,
Jonas Zipfel,
Indrajit Maity,
Monica Lorenzon,
Luca Francaviglia,
Emma C. Regan,
Zuocheng Zhang,
Jacob H. Nie,
Edward Barnard,
Kenji Watanabe,
Takashi Taniguchi,
Eli Rotenberg,
Feng Wang,
Johannes Lischner,
Archana Raja,
Alexander Weber-Bargioni
Abstract:
Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate ho…
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Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate how phasons are integral to properly describing and understanding low-temperature interlayer exciton diffusion in WS2/WSe2 heterostructure. We perform photoluminescence (PL) spectroscopy to understand how the coupling between the layers, affected by their relative orientation, impacts the excitonic properties of the system. Samples fabricated with stacking angles of 0° and 60° are investigated taking into account the stacking angle dependence of the two common moiré potential profiles. Additionally, we present spatially and time-resolved exciton diffusion measurements, looking at the photoluminescence emission in a temperature range from 30 K to 250 K. An accurate potential for the two configurations are computed via density functional theory (DFT) calculations. Finally, we perform molecular dynamics simulation in order to visualize the phasons motion, estimating the phason speed at different temperatures, providing novel insights into the mechanics of exciton propagation at low temperatures that cannot be explained within the frame of classical exciton diffusion alone.
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Submitted 18 January, 2023;
originally announced January 2023.
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Graphene-driven correlated electronic states in one dimensional defects within WS$_2$
Authors:
Antonio Rossi,
John C. Thomas,
Johannes T. Küchle,
Elyse Barré,
Zhuohang Yu,
Da Zhou,
Shalini Kumari,
Hsin-Zon Tsai,
Ed Wong,
Chris Jozwiak,
Aaron Bostwick,
Joshua A. Robinson,
Mauricio Terrones,
Archana Raja,
Adam Schwartzberg,
D. Frank Ogletree,
Jeffrey B. Neaton,
Michael F. Crommie,
Francesco Allegretti,
Willi Auwärter,
Eli Rotenberg,
Alexander Weber-Bargioni
Abstract:
Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of one-dimensional defects hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate require cro…
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Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of one-dimensional defects hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate require cross-correlative investigation. Here, we study TLL formation within defectively engineered WS$_2$ atop graphene, where band structure and the atomic environment is visualized with nano angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy, and non-contact atomic force microscopy. Correlations between the local density of states and electronic band dispersion elucidated the electron transfer from graphene into a TLL hosted by one-dimensional metal (1DM) defects. It appears that the vertical heterostructure with graphene and the induced charge transfer from graphene into the 1DM is critical for the formation of a TLL.
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Submitted 7 July, 2025; v1 submitted 6 January, 2023;
originally announced January 2023.
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Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum
Authors:
F. Riminucci,
V. Ardizzone,
L. Francaviglia,
M. Lorenzon,
C. Stavrakas,
S. Dhuey,
A. Schwartzberg,
S. Zanotti,
D. Gerace,
K. Baldwin,
L. N. Pfeiffer,
G. Gigli,
D. F. Ogletree,
A. Weber-Bargioni,
S. Cabrini,
D. Sanvitto
Abstract:
Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it diffi…
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Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in GaAs/AlGaAs waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls.
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Submitted 11 May, 2022;
originally announced May 2022.
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Autonomous Investigations over WS$_2$ and Au{111} with Scanning Probe Microscopy
Authors:
John C. Thomas,
Antonio Rossi,
Darian Smalley,
Luca Francaviglia,
Zhuohang Yu,
Tianyi Zhang,
Shalini Kumari,
Joshua A. Robinson,
Mauricio Terrones,
Masahiro Ishigami,
Eli Rotenberg,
Edward S. Barnard,
Archana Raja,
Ed Wong,
D. Frank Ogletree,
Marcus M. Noack,
Alexander Weber-Bargioni
Abstract:
Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) mapping provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutio…
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Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) mapping provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutional neural networks are used in tandem for spectral identification. Acquired data enable defect segmentation, and a workflow is provided for machine-driven decision making during experimentation with capability for user customization. We provide a means towards autonomous experimentation for the benefit of both enhanced reproducibility and user-accessibility. Hyperspectral investigations on WS$_2$ sulfur vacancy sites are explored, which is combined with local density of states confirmation on the Au{111} herringbone reconstruction. Chalcogen vacancies, pristine WS$_2$, Au face-centered cubic, and Au hexagonal close packed regions are examined and detected by machine learning methods to demonstrate the potential of artificial intelligence for hyperspectral STS mapping.
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Submitted 2 May, 2022; v1 submitted 7 October, 2021;
originally announced October 2021.
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Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe$_2$ mirror twin boundaries
Authors:
Tiancong Zhu,
Wei Ruan,
Yan-Qi Wang,
Hsin-Zon Tsai,
Shuopei Wang,
Canxun Zhang,
Tianye Wang,
Franklin Liou,
Kenji Watanabe,
Takashi Taniguchi,
Jeffrey B. Neaton,
Alex Weber-Bargioni,
Alex Zettl,
Ziqiang Qiu,
Guangyu Zhang,
Feng Wang,
Joel E. Moore,
Michael F. Crommie
Abstract:
One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed…
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One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behavior. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and thereby tune their charge carrier concentration. Here we present a scanning tunneling microscopy/spectroscopy study of gate-tunable mirror twin boundaries (MTBs) in single-layer 1H-MoSe$_2$ devices. Gating here enables STM spectroscopy to be performed for different MTB electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of MTB electronic structure under these conditions allows unambiguous identification of collective density wave excitations having two distinct velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger-liquid theory.
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Submitted 20 August, 2021; v1 submitted 9 August, 2021;
originally announced August 2021.
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Localization and reduction of superconducting quantum coherent circuit losses
Authors:
M. Virginia P. Altoé,
Archan Banerjee,
Cassidy Berk,
Ahmed Hajr,
Adam Schwartzberg,
Chengyu Song,
Mohammed Al Ghadeer,
Shaul Aloni,
Michael J. Elowson,
John Mark Kreikebaum,
Ed K. Wong,
Sinead Griffin,
Saleem Rao,
Alexander Weber-Bargioni,
Andrew M. Minor,
David I. Santiago,
Stefano Cabrini,
Irfan Siddiqi,
D. Frank Ogletree
Abstract:
Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (T…
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Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (TLS) in amorphous dielectrics at circuit interfaces.[1] The electric fields driving oscillating charges in quantum circuits resonantly couple to TLS, producing phase noise and dissipation. We use coplanar niobium-on-silicon superconducting resonators to probe decoherence in quantum circuits. By selectively modifying interface dielectrics, we show that most TLS losses come from the silicon surface oxide, and most non-TLS losses are distributed throughout the niobium surface oxide. Through post-fabrication interface modification we reduced TLS losses by 85% and non-TLS losses by 72%, obtaining record single-photon resonator quality factors above 5 million and approaching a regime where non-TLS losses are dominant.
[1]Müller, C., Cole, J. H. & Lisenfeld, J. Towards understanding two-level-systems in amorphous solids: insights from quantum circuits. Rep. Prog. Phys. 82, 124501 (2019)
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Submitted 14 December, 2020;
originally announced December 2020.
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Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS$_2$
Authors:
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jonah B. Haber,
Tianyi Zhang,
Azimkhan Kozhakhmetov,
Joshua A. Robinson,
Mauricio Terrones,
Jascha Repp,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Bruno Schuler
Abstract:
We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides (TMDs). Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping can be activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state,…
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We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides (TMDs). Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping can be activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state, the carbon impurity exhibits a magnetic moment of 1 $μ_\text{B}$ resulting from an unpaired electron populating a spin-polarized in-gap orbital of C$^{\bullet -}_\text{S}$. Fermi level control by the underlying graphene substrate can charge and decharge the defect, thereby activating or quenching the defect magnetic moment. By inelastic tunneling spectroscopy and density functional theory calculations we show that the CRI defect states couple to a small number of vibrational modes, including a local, breathing-type mode. Interestingly, the electron-phonon coupling strength critically depends on the spin state and differs for monolayer and bilayer WS$_2$. These carbon radical ions in TMDs comprise a new class of surface-bound, single-atom spin-qubits that can be selectively introduced, are spatially precise, feature a well-understood vibronic spectrum, and are charge state controlled.
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Submitted 27 August, 2020;
originally announced August 2020.
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Ultra-high-resolution imaging of moiré lattices and superstructures using scanning microwave impedance microscopy under ambient conditions
Authors:
Kyunghoon Lee,
M. Iqbal Bakti Utama,
Salman Kahn,
Appalakondaiah Samudrala,
Nicolas Leconte,
Birui Yang,
Shuopei Wang,
Kenji Watanabe,
Takashi Taniguchi,
Guangyu Zhang,
Alexander Weber-Bargioni,
Michael Crommie,
Paul D. Ashby,
Jeil Jung,
Feng Wang,
Alex Zettl
Abstract:
Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of two-dimensional materials for realizing novel correlated and topological phenomena. In addition, superstructures of moire lattices can emerge from multiple misaligned…
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Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of two-dimensional materials for realizing novel correlated and topological phenomena. In addition, superstructures of moire lattices can emerge from multiple misaligned lattice vectors or inhomogeneous strain distribution, which offers an extra degree of freedom in the electronic band structure design. High-resolution imaging of the moire lattices and superstructures is critical for quantitative understanding of emerging moire physics. Here we report the nanoscale imaging of moire lattices and superstructures in various graphene-based samples under ambient conditions using an ultra-high-resolution implementation of scanning microwave impedance microscopy. We show that, quite remarkably, although the scanning probe tip has a gross radius of ~100 nm, an ultra-high spatial resolution in local conductivity profiles better than 5 nm can be achieved. This resolution enhancement not only enables to directly visualize the moire lattices in magic-angle twisted double bilayer graphene and composite super-moire lattices, but also allows design path toward artificial synthesis of novel moire superstructures such as the Kagome moire from the interplay and the supermodulation between twisted graphene and hexagonal boron nitride layers.
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Submitted 6 June, 2020;
originally announced June 2020.
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How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
Authors:
Bruno Schuler,
Jun-Ho Lee,
Christoph Kastl,
Katherine A. Cochrane,
Christopher T. Chen,
Sivan Refaely-Abramson,
Shengjun Yuan,
Edo van Veen,
Rafael Roldán,
Nicholas J. Borys,
Roland J. Koch,
Shaul Aloni,
Adam M. Schwartzberg,
D. Frank Ogletree,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided in…
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Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs.
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Submitted 15 May, 2020;
originally announced May 2020.
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Planar Aperiodic Arrays as Metasurfaces for Optical Near-Field Patterning
Authors:
Mario Miscuglio,
Nicholas J. Borys,
Davide Spirito,
Beatriz Martín-García,
Remo Proietti Zaccaria,
Alexander Weber-Bargioni,
P. James Schuck,
Roman Krahne
Abstract:
Plasmonic metasurfaces have spawned the field of flat optics using nanostructured planar metallic or dielectric surfaces that can replace bulky optical elements and enhance the capabilities of traditional far-field optics. Furthermore, the potential of flat optics can go far beyond far-field modulation, and can be exploited for functionality in the near-field itself. Here, we design metasurfaces b…
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Plasmonic metasurfaces have spawned the field of flat optics using nanostructured planar metallic or dielectric surfaces that can replace bulky optical elements and enhance the capabilities of traditional far-field optics. Furthermore, the potential of flat optics can go far beyond far-field modulation, and can be exploited for functionality in the near-field itself. Here, we design metasurfaces based on aperiodic arrays of plasmonic Au nanostructures for tailoring the optical near-field in the visible and near-infrared spectral range. The basic element of the arrays is a rhomboid that is modulated in size, orientation and position to achieve the desired functionality of the micron-size metasurface structure. Using two-photon-photoluminescence as a tool to probethe near-field profiles in the plane of the metasurfaces, we demonstrate the molding of light into different near-field intensity patterns and active pattern control via the far-field illumination. Finite element method simulations reveal that the near-field modulation occurs via a combination of the plasmonic resonances of the rhomboids and field enhancement in the nanoscale gaps in between the elements. This approach enables optical elements that can switch the near-field distribution across the metasurface via wavelength and polarization of the incident far-field light, and provides pathways for light matter interaction in integrated devices.
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Submitted 21 April, 2020;
originally announced April 2020.
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Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist
Authors:
M. Iqbal Bakti Utama,
Roland J. Koch,
Kyunghoon Lee,
Nicolas Leconte,
Hongyuan Li,
Sihan Zhao,
Lili Jiang,
Jiayi Zhu,
Kenji Watanabe,
Takashi Taniguchi,
Paul D. Ashby,
Alexander Weber-Bargioni,
Alex Zettl,
Chris Jozwiak,
Jeil Jung,
Eli Rotenberg,
Aaron Bostwick,
Feng Wang
Abstract:
Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the e…
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Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.
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Submitted 2 December, 2019;
originally announced December 2019.
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Electrically driven photon emission from individual atomic defects in monolayer WS2
Authors:
Bruno Schuler,
Katherine A. Cochrane,
Christoph Kastl,
Ed Barnard,
Ed Wong,
Nicholas Borys,
Adam M. Schwartzberg,
D. Frank Ogletree,
F. Javier García de Abajo,
Alexander Weber-Bargioni
Abstract:
Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstr…
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Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstrate electrically stimulated photon emission from individual point defects in a 2D material. Specifically, by bringing a metallic tip into close proximity to a discrete defect state in the band gap of WS2, we induce inelastic tip-to-defect electron tunneling with an excess of transition energy carried by the emitted photons. We gain atomic spatial control over the emission through the position of the tip, while the spectral characteristics are highly customizable by varying the applied tip-sample voltage. Atomically resolved emission maps of individual sulfur vacancies and chromium substituent defects are in excellent agreement with the electron density of their respective defect orbitals as imaged via conventional elastic scanning tunneling microscopy. Inelastic charge-carrier injection into localized defect states of 2D materials thus provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.
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Submitted 10 October, 2019;
originally announced October 2019.
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Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors
Authors:
Martik Aghajanian,
Bruno Schuler,
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Arash A. Mostofi,
Johannes Lischner
Abstract:
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave functi…
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A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at $Γ$ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
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Submitted 5 September, 2019;
originally announced September 2019.
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Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Authors:
Sara Barja,
Sivan Refaely-Abramson,
Bruno Schuler,
Diana Y. Qiu,
Artem Pulkin,
Sebastian Wickenburg,
Hyejin Ryu,
Miguel M. Ugeda,
Christoph Kastl,
Christopher Chen,
Choongyu Hwang,
Adam Schwartzberg,
Shaul Aloni,
Sung-Kwan Mo,
D. Frank Ogletree,
Michael F. Crommie,
Oleg V. Yazyev,
Steven G. Louie,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scan…
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Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scanning Tunneling Microscopy (STM) images. However, TEM imaging measurements do not provide direct access to the electronic structure of individual defects; and while Scanning Tunneling Spectroscopy (STS) is a direct probe of local electronic structure, the interpretation of the chemical nature of atomically-resolved STM images of point defects in 2D-TMDs can be ambiguous. As a result, the assignment of point defects as vacancies or substitutional atoms of different kinds in 2D-TMDs, and their influence on their electronic properties, has been inconsistent and lacks consensus. Here, we combine low-temperature non-contact atomic force microscopy (nc-AFM), STS, and state-of-the-art ab initio density functional theory (DFT) and GW calculations to determine both the structure and electronic properties of the most abundant individual chalcogen-site defects common to 2D-TMDs. Surprisingly, we observe no IGS for any of the chalcogen defects probed. Our results and analysis strongly suggest that the common chalcogen defects in our 2D-TMDs, prepared and measured in standard environments, are substitutional oxygen rather than vacancies.
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Submitted 6 March, 2020; v1 submitted 8 October, 2018;
originally announced October 2018.
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Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Authors:
Bruno Schuler,
Diana Y. Qiu,
Sivan Refaely-Abramson,
Christoph Kastl,
Christopher T. Chen,
Sara Barja,
Roland J. Koch,
D. Frank Ogletree,
Shaul Aloni,
Adam M. Schwartzberg,
Jeffrey B. Neaton,
Steven G. Louie,
Alexander Weber-Bargioni
Abstract:
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure…
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Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states of the vacancy provide a unique fingerprint of this defect. Direct imaging of the defect orbitals by STM and state-of-the-art GW calculations reveal that the large splitting of 252 meV between these defect states is induced by spin-orbit coupling. The controllable incorporation and potential decoration of chalcogen vacancies provide a new route to tailor the optical, catalytic and magnetic properties of TMDs.
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Submitted 19 August, 2019; v1 submitted 5 October, 2018;
originally announced October 2018.
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Observation of charge density wave order in 1D mirror twin boundaries of single-layer MoSe2
Authors:
Sara Barja,
Sebastian Wickenburg,
Zhen-Fei Liu,
Yi Zhang,
Hyejin Ryu,
Miguel M. Ugeda,
Zahid Hussain,
Z. -X. Shen,
Sung-Kwan Mo,
Ed Wong,
Miquel B. Salmeron,
Feng Wang,
Michael F. Crommie,
D. Frank Ogletree,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2…
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Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2. Our low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a substantial bandgap of 60 - 140 meV opening at the Fermi level in the otherwise one dimensional metallic structure. We find an energy-dependent periodic modulation in the density of states along the mirror twin boundary, with a wavelength of approximately three lattice constants. The modulations in the density of states above and below the Fermi level are spatially out of phase, consistent with charge density wave order. In addition to the electronic characterization, we determine the atomic structure and bonding configuration of the one-dimensional mirror twin boundary by means of high-resolution non-contact atomic force microscopy. Density functional theory calculations reproduce both the gap opening and the modulations of the density of states.
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Submitted 17 March, 2016;
originally announced March 2016.
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Raman signal-enhancement and broadening with graphene-coated diamond-shape nano-antennas
Authors:
Charilaos Paraskevaidis,
Tevye Kuykendall,
Mauro Melli,
Alexander Weber-Bargioni,
P. James Schuck,
Adam Schwartzberg,
Scott Dhuey,
Stefano Cabrini,
Haim Grebel
Abstract:
We used broad-band diamond-shape antennas, whose bandwidth could cover the frequency range between the pump laser and the scattered modes, in conjunction with uniformly deposited graphene test films.
We used broad-band diamond-shape antennas, whose bandwidth could cover the frequency range between the pump laser and the scattered modes, in conjunction with uniformly deposited graphene test films.
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Submitted 30 September, 2013;
originally announced October 2013.
