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Monolithic 4H-SiC nanomechanical resonators with high intrinsic quality factors
Authors:
A. Hochreiter,
P. Bredol,
F. David,
B. Demiralp,
H. B. Weber,
E. M. Weig
Abstract:
We present an extensive study of 4H-SiC nanomechanical resonators electrochemically etched out of a monocrystalline wafer. Combining piezo-driven interferometric determination of the mechanical spectra with scanning-laser-Doppler vibrometry, an unambiguous assignment of resonance peaks to flexural and torsional modes is achieved. The investigation of multiple harmonic eigenmodes of singly and doub…
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We present an extensive study of 4H-SiC nanomechanical resonators electrochemically etched out of a monocrystalline wafer. Combining piezo-driven interferometric determination of the mechanical spectra with scanning-laser-Doppler vibrometry, an unambiguous assignment of resonance peaks to flexural and torsional modes is achieved. The investigation of multiple harmonic eigenmodes of singly and doubly clamped resonators with varying geometry allows for a comprehensive characterization. Excellent intrinsic mechanical quality factors up to $2\times10^5$ are found at room temperature, approaching the thermoelastic limit at eigenfrquencies exceeding 10 MHz. Mechanical stress is essentially absent. Young's modulus in agreement with literature. These findings are robust under post-processing treatments, in particular atomic layer etching and high-temperature thermal annealing. The resulting on-chip high-quality mechanical resonators represent a valuable technological element for a broad range of applications. In particular, the monolithic architecture meets the requirements of spin-based photonic quantum technologies on the upcoming SiC platform.
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Submitted 29 January, 2025;
originally announced January 2025.
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Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
Authors:
André Hochreiter,
Fabian Groß,
Morris-Niklas Möller,
Michael Krieger,
Heiko B. Weber
Abstract:
Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of photonic quantum technologies, nano-mechanical resonators and photonics on-a-chip. For shaping 3D structures out of SiC wafers, predominantly dry-etching techniques are used. SiC is nearly inert with respect to wet-etching, occasionally photoelectrochemical…
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Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of photonic quantum technologies, nano-mechanical resonators and photonics on-a-chip. For shaping 3D structures out of SiC wafers, predominantly dry-etching techniques are used. SiC is nearly inert with respect to wet-etching, occasionally photoelectrochemical etching strategies have been applied. Here, we propose an electrochemical etching strategy that solely relies on defining etchable volumina by implantation of p-dopands. Together with the inertness of the n-doped regions, very sharp etching contrasts can be achieved. We present devices as different as monolithic cantilevers, disk-shaped optical resonators and membranes etched out of a single crystal wafer. The high quality of the resulting surfaces can even be enhanced by thermal treatment, with shape-stable devices up to and even beyond 1550°C. The versatility of our approach paves the way for new functionalities on SiC as high-performance multi-functional wafer platform.
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Submitted 21 June, 2023;
originally announced June 2023.
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Light-field control of real and virtual charge carriers
Authors:
Tobias Boolakee,
Christian Heide,
Antonio Garzón-Ramírez,
Heiko B. Weber,
Ignacio Franco,
Peter Hommelhoff
Abstract:
Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone it is referred to as virtual, while the population remaining excited is cal…
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Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone it is referred to as virtual, while the population remaining excited is called real. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption, while photocurrent generation may stem from real as well as virtual charge carriers. Yet, a link between the carrier types in their generation and importance for observables up to technological relevance is missing. Here we show that real and virtual carriers can be excited and disentangled in the optical generation of currents in a gold-graphene-gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, while virtual carriers generate a polarization response read out at the gold-graphene interfaces. Based on these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type will dramatically increase the integrated circuit design space and bring closer to reality petahertz signal processing.
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Submitted 8 March, 2022; v1 submitted 7 March, 2022;
originally announced March 2022.
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Electronic coherence and coherent dephasing in the optical control of electrons in graphene
Authors:
Christian Heide,
Timo Eckstein,
Tobias Boolakee,
Constanze Gerner,
Heiko B. Weber,
Ignacio Franco,
Peter Hommelhoff
Abstract:
Electronic coherence is of utmost importance for the access and control of quantum-mechanical solid-state properties. Using a purely electronic observable, the photocurrent, we measure an electronic coherence time of 22 +/- 4 fs in graphene. The photocurrent is ideally suited to measure electronic coherence as it is a direct result of quantum path interference, controlled by the delay between two…
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Electronic coherence is of utmost importance for the access and control of quantum-mechanical solid-state properties. Using a purely electronic observable, the photocurrent, we measure an electronic coherence time of 22 +/- 4 fs in graphene. The photocurrent is ideally suited to measure electronic coherence as it is a direct result of quantum path interference, controlled by the delay between two ultrashort two-color laser pulses. The maximum delay for which interference between the population amplitude injected by the first pulse interferes with that generated by the second pulse determines the electronic coherence time. In particular, numerical simulations reveal that the experimental data yield a lower boundary on the electronic coherence time and that coherent dephasing masks a lower coherence time. We expect that our results will significantly advance the understanding of coherent quantum-control in solid-state systems ranging from excitation with weak fields to strongly driven systems.
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Submitted 14 July, 2021;
originally announced July 2021.
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Thermal origin of light emission in non-resonant and resonant tunnel junctions
Authors:
Christian Ott,
Stephan Götzinger,
Heiko B. Weber
Abstract:
Electron tunneling is associated with light emission. In order to elucidate its generating mechanism, we provide a novel experimental ansatz that employs fixed-distance epitaxial graphene as metallic electrodes. In contrast to previous experiments, this permits an unobscured light spread from the tunnel junction, enabling both a reliable calibration of the visible to infrared emission spectrum and…
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Electron tunneling is associated with light emission. In order to elucidate its generating mechanism, we provide a novel experimental ansatz that employs fixed-distance epitaxial graphene as metallic electrodes. In contrast to previous experiments, this permits an unobscured light spread from the tunnel junction, enabling both a reliable calibration of the visible to infrared emission spectrum and a detailed analysis of the dependence of the parameters involved. In an open, non-resonant geometry, the emitted light is perfectly characterized by a Planck spectrum. In an electromagnetically resonant environment, resonant radiation is added to the thermal spectrum, both being strictly proportional in intensity. In full agreement with a simple heat conduction model, we provide evidence that in both cases the light emission stems from a hot electronic subsystem in interaction with its linear electromagnetic environment. These very clear results should resolve any ambiguity about the mechanism of light emission in nano contacts.
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Submitted 24 June, 2020;
originally announced June 2020.
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Thermoelectricity of near-resonant tunnel junctions and their near-Carnot efficiency
Authors:
Matthias A. Popp,
André Erpenbeck,
Heiko B. Weber
Abstract:
The resonant tunneling model is the simplest model for describing electronic transport through nanoscale objects like individual molecules. A complete understanding includes not only charge transport but also thermal transport and their intricate interplay. Key linear response observables are the electrical conductance G and the Seebeck coefficient S. Here we present experiments on unspecified res…
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The resonant tunneling model is the simplest model for describing electronic transport through nanoscale objects like individual molecules. A complete understanding includes not only charge transport but also thermal transport and their intricate interplay. Key linear response observables are the electrical conductance G and the Seebeck coefficient S. Here we present experiments on unspecified resonant tunnel junctions and molecular junctions that uncover correlations between $G$ and $S$, in particular rigid boundaries for $S(G)$. We find that these correlations can be consistently understood by the single-level resonant tunneling model, with excellent match to experiments. In this framework, measuring $I(V)$ and $S$ for a given junction provides access to the full thermoelectric characterization of the electronic system. A remarkable result is that without targeted chemical design, molecular junctions can expose thermoelectric conversion efficiencies which are close to the Carnot limit. This insight allows to provide design rules for optimized thermoelectric efficiency.
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Submitted 9 June, 2020;
originally announced June 2020.
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Attosecond-fast internal photoemission
Authors:
Christian Heide,
Martin Hauck,
Takuya Higuchi,
Jürgen Ristein,
Lothar Ley,
Heiko B. Weber,
Peter Hommelhoff
Abstract:
The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission. Here an electron is photoemitted from a metal into a semiconductor. While the photoelectric effect takes place within less than 100 attoseconds, the attosecond time scale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser…
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The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission. Here an electron is photoemitted from a metal into a semiconductor. While the photoelectric effect takes place within less than 100 attoseconds, the attosecond time scale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON, CHAMELEON, we show that the atomically thin semi-metal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300 $\pm$ 200) attoseconds. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz for the charge transfer rate, this semimetal-semiconductor interface represents the first functional solid-state interface offering the speed and design space required for future light-wave signal processing.
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Submitted 9 January, 2020;
originally announced January 2020.
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Coherent electron trajectory control in graphene
Authors:
Christian Heide,
Takuya Higuchi,
Heiko B. Weber,
Peter Hommelhoff
Abstract:
We investigate coherent electron dynamics in graphene, interacting with the electric field waveform of two orthogonally polarized, few-cycle laser pulses. Recently, we demonstrated that linearly polarized driving pulses lead to sub-optical-cycle Landau-Zener quantum path interference by virtue of the combination of intraband motion and interband transition [Higuchi $\textit{et al.}$, Nature…
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We investigate coherent electron dynamics in graphene, interacting with the electric field waveform of two orthogonally polarized, few-cycle laser pulses. Recently, we demonstrated that linearly polarized driving pulses lead to sub-optical-cycle Landau-Zener quantum path interference by virtue of the combination of intraband motion and interband transition [Higuchi $\textit{et al.}$, Nature $\textbf{550}$, 224 (2017)]. Here we introduce a pulsed control laser beam, orthogonally polarized to the driving pulses, and observe the ensuing electron dynamics. The relative delay between the two pulses is a tuning parameter to control the electron trajectory, now in a complex fashion exploring the full two-dimensional reciprocal space in graphene. Depending on the relative phase, the electron trajectory in the reciprocal space can, for example, be deformed to suppress the quantum path interference resulting from the driving laser pulse. Intriguingly, this strong-field-based complex matter wave manipulation in a two-dimensional conductor is driven by a high repetition rate \textit{laser oscillator}, rendering unnecessary complex and expensive amplified laser systems.
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Submitted 15 November, 2018;
originally announced November 2018.
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Fractional Quantum Hall plateaus in mosaic-like conductors
Authors:
Ferdinand Kisslinger,
Dennis Rienmüller,
Christian Ott,
Erik Kampert,
Heiko B. Weber
Abstract:
We report a simple route to generate magnetotransport data that results in fractional quantum Hall plateaus in the conductance. Ingredients to the generating model are conducting tiles with integer quantum Hall effect and metallic linkers, further Kirchhoff rules. When connecting few identical tiles in a mosaic, fractional steps occur in the conductance values. Richer spectra representing several…
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We report a simple route to generate magnetotransport data that results in fractional quantum Hall plateaus in the conductance. Ingredients to the generating model are conducting tiles with integer quantum Hall effect and metallic linkers, further Kirchhoff rules. When connecting few identical tiles in a mosaic, fractional steps occur in the conductance values. Richer spectra representing several fractions occur when the tiles are parametrically varied. Parts of the simulation data are supported with purposefully designed graphene mosaics in high magnetic fields. The findings emphasize that the occurrence of fractional conductance values, in particular in two-terminal measurements, does not necessarily indicate interaction-driven physics. We underscore the importance of an independent determination of charge densities and critically discuss similarities with and differences to the fractional quantum Hall effect.
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Submitted 3 May, 2018;
originally announced May 2018.
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Spin-split bands cause the indirect band gap of (CH$_3$NH$_3$)PbI$_3$: Experimental evidence from circular photogalvanic effect
Authors:
Daniel Niesner,
Martin Hauck,
Shreetu Shrestha,
Ievgen Levchuk,
Gebhard J. Matt,
Andres Osvet,
Miroslaw Batentschuk,
Christoph Brabec,
Heiko B. Weber,
Thomas Fauster
Abstract:
Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CH$_3$NH$_3$)PbI$_3$ in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly…
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Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CH$_3$NH$_3$)PbI$_3$ in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly polarized light we induce photocurrents of opposite directions in a single-crystal (CH$_3$NH$_3$)PbI$_3$ device at low temperature ($4~\mathrm{K}$). The phenomenom is known as the circular photogalvanic effect and gives direct evidence for phototransport in spin-split bands. Simultaneous photoluminecence measurements show that the onset of the photocurrent is below the optical band gap. The results prove that an indirect band gap exists in (CH$_3$NH$_3$)PbI$_3$ with broken inversion symmetry as a result of spin-splittings in the band structure. This information is essential for understanding the photophysical properties of organic-inorganic perovskites and finding lead-free alternatives. Furthermore, the optically driven spin currents in (CH$_3$NH$_3$)PbI$_3$ make it a candidate material for spintronics applications.
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Submitted 25 March, 2017;
originally announced March 2017.
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Charge Transport in C$_{60}$-based Single-Molecule Junctions with Graphene Electrodes
Authors:
Susanne Leitherer,
Pedro B. Coto,
Konrad Ullmann,
Heiko B. Weber,
Michael Thoss
Abstract:
We investigate charge transport in C$_{60}$-based single-molecule junctions with graphene electrodes employing a combination of density functional theory (DFT) electronic structure calculations and Landauer transport theory. In particular, the dependence of the transport properties on the conformation of the molecular bridge and the type of termination of the graphene electrodes is investigated. F…
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We investigate charge transport in C$_{60}$-based single-molecule junctions with graphene electrodes employing a combination of density functional theory (DFT) electronic structure calculations and Landauer transport theory. In particular, the dependence of the transport properties on the conformation of the molecular bridge and the type of termination of the graphene electrodes is investigated. Furthermore, electron pathways through the junctions are analyzed using the theory of local currents. The results reveal, in agreement with previous experiments, a pronounced dependence of the transport properties on the bias polarity, which is rationalized in terms of the electronic structure of the molecule. It is also shown that the edge states of zigzag-terminated graphene induce additional transport channels, which dominate transport at small voltages. The importance of the edge states for transport depends profoundly on the interface geometry of the junctions.
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Submitted 11 January, 2017;
originally announced January 2017.
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Anomalous Dirac point transport due to extended defects in bilayer graphene
Authors:
Sam Shallcross,
Sangeeta Sharma,
Heiko B. Weber
Abstract:
Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered c…
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Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the conductivity distribution $P(σ)$ is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.
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Submitted 5 December, 2016;
originally announced December 2016.
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On the Origin of Non-Saturating Linear Magnetoresistivity
Authors:
Ferdinand Kisslinger,
Christian Ott,
Heiko B. Weber
Abstract:
The observation of non-saturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent consideration of the environment. An equivalent-circuit scheme delivers a simple and convincing argument why the magnetoresistivity is linear in strong magnetic field…
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The observation of non-saturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent consideration of the environment. An equivalent-circuit scheme delivers a simple and convincing argument why the magnetoresistivity is linear in strong magnetic field, provided that current and biasing electric field are misaligned by a nonlocal mechanism. A finite-element model of a two-dimensional conductor is suited to display the situations that create such deviating currents. Besides edge effects next to electrodes, charge carrier density fluctuations are efficiently generating this effect. However, mobility fluctuations that have frequently been related to linear magnetoresistivity are barely relevant. Despite its rare observation, linear magnetoresitivity is rather the rule than the exception in a regime of low charge carrier densities, misaligned current pathways and strong magnetic field.
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Submitted 8 September, 2016;
originally announced September 2016.
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Light-field driven currents in graphene
Authors:
Takuya Higuchi,
Christian Heide,
Konrad Ullmann,
Heiko B. Weber,
Peter Hommelhoff
Abstract:
Ultrafast electron dynamics in solids under strong optical fields has recently found particular attention. In dielectrics and semiconductors, various light-field-driven effects have been explored, such as high-harmonic generation, sub-optical-cycle interband population transfer and nonperturbative increase of transient polarizability. In contrast, much less is known about field-driven electron dyn…
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Ultrafast electron dynamics in solids under strong optical fields has recently found particular attention. In dielectrics and semiconductors, various light-field-driven effects have been explored, such as high-harmonic generation, sub-optical-cycle interband population transfer and nonperturbative increase of transient polarizability. In contrast, much less is known about field-driven electron dynamics in metals because charge carriers screen an external electric field in ordinary metals. Here we show that atomically thin monolayer Graphene offers unique opportunities to study light-field-driven processes in a metal. With a comparably modest field strength of up to 0.3 V/Å, we drive combined interband and intraband electron dynamics, leading to a light-field-waveform controlled residual conduction current after the laser pulse is gone. We identify the underlying pivotal physical mechanism as electron quantum-path interference taking place on the 1-femtosecond ($10^{-15}$ second) timescale. The process can be categorized as Landau-Zener-Stückelberg interferometry. These fully coherent electron dynamics in graphene take place on a hitherto unexplored timescale faster than electron-electron scattering (tens of femtoseconds) and electron-phonon scattering (hundreds of femtoseconds). These results broaden the scope of light-field control of electrons in solids to an entirely new and eminently important material class -- metals -- promising wide ramifications for band structure tomography and light-field-driven electronics.
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Submitted 14 July, 2016;
originally announced July 2016.
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Terahertz response of patterned epitaxial graphene
Authors:
C. Sorger,
S. Preu,
J. Schmidt,
S. Winnerl,
Y. V. Bludov,
N. M. R. Peres,
M. I. Vasilevskiy,
H. B. Weber
Abstract:
We study the interaction between polarized terahertz (THz) radiation and micro-structured large-area graphene in transmission geometry. In order to efficiently couple the radiation into the two-dimensional material, a lateral periodic patterning of a closed graphene sheet by intercalation doping into stripes is chosen, yielding unequal transmittance of the radiation polarized parallel and perpendi…
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We study the interaction between polarized terahertz (THz) radiation and micro-structured large-area graphene in transmission geometry. In order to efficiently couple the radiation into the two-dimensional material, a lateral periodic patterning of a closed graphene sheet by intercalation doping into stripes is chosen, yielding unequal transmittance of the radiation polarized parallel and perpendicular to the stripes. Indeed, a polarization contrast up to 20% is observed. The effect even increases up to 50% when removing graphene stripes in analogy to a wire grid polarizer. The polarization dependence is analyzed in a large frequency range from < 80 GHz to 3 THz, including the plasmon-polariton resonance. The results are in excellent agreement with theoretical calculations based on the electronic energy spectrum of graphene and the electrodynamics of the patterned structure.
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Submitted 6 October, 2014;
originally announced October 2014.
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Current Noise in Single-Molecule Junctions Induced by Electronic-Vibrational Coupling
Authors:
C. Schinabeck,
R. Härtle,
H. B. Weber,
M. Thoss
Abstract:
The influence of multiple vibrational modes on current fluctuations in electron transport through single-molecule junctions is investigated. Our analysis is based on a generic model of a molecular junction, which comprises a single electronic state on the molecular bridge coupled to multiple vibrational modes and fermionic leads, and employs a master equation approach. The results reveal that in m…
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The influence of multiple vibrational modes on current fluctuations in electron transport through single-molecule junctions is investigated. Our analysis is based on a generic model of a molecular junction, which comprises a single electronic state on the molecular bridge coupled to multiple vibrational modes and fermionic leads, and employs a master equation approach. The results reveal that in molecular junctions with multiple vibrational modes already weak to moderate electronic-vibrational coupling may result in high noise levels, especially at the onset of resonant transport, in accordance with experimental findings of Secker et al..[1] The underlying mechanisms are analyzed in some detail.
[1] D. Secker et al., Phys. Rev. Lett. 106, 136807 (2011).
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Submitted 6 May, 2014;
originally announced May 2014.
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The detection of Kondo effect in the resistivity of graphene: artifacts and strategies
Authors:
Johannes Jobst,
Ferdinand Kisslinger,
Heiko B. Weber
Abstract:
We discuss the difficulties to discover Kondo effect in the resistivity of graphene. Similarly to the Kondo effect, electron-electron interaction effects and weak localization appear as logarithmic corrections to the resistance. In order to disentangle these contributions, a refined analysis of the magnetoconductance and the magnetoresistance is introduced. We present numerical simulations which d…
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We discuss the difficulties to discover Kondo effect in the resistivity of graphene. Similarly to the Kondo effect, electron-electron interaction effects and weak localization appear as logarithmic corrections to the resistance. In order to disentangle these contributions, a refined analysis of the magnetoconductance and the magnetoresistance is introduced. We present numerical simulations which display the discrimination of both effects. Further, we present experimental data of magnetotransport. When magnetic molecules are added to graphene, a logarithmic correction to the conductance occurs, which apparently suggests Kondo physics. Our thorough evaluation scheme, however, reveals that this interpretation is not conclusive: the data can equally be explained by electron-electron interaction corrections in an inhomogeneous sample. Our evaluation scheme paves the way for a more refined search for the Kondo effect in graphene.
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Submitted 30 August, 2013;
originally announced August 2013.
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Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions
Authors:
Stefan Ballmann,
Rainer Härtle,
Pedro B. Coto,
Marcel Mayor,
Mark Elbing,
Martin R. Bryce,
Michael Thoss,
Heiko B. Weber
Abstract:
We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasi-degenerate states. Decoherence mechanisms arising from the electronic-vibrational coupling strongly affect t…
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We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasi-degenerate states. Decoherence mechanisms arising from the electronic-vibrational coupling strongly affect the electrical current flowing through a single-molecule contact and can be controlled by temperature variation. Our findings underline the all-important relevance of vibrations for understanding charge transport through molecular junctions.
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Submitted 19 March, 2012;
originally announced March 2012.
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Manifestation of electron-electron interaction in the magnetoresistance of graphene
Authors:
Johannes Jobst,
Daniel Waldmann,
Igor V. Gornyi,
Alexander D. Mirlin,
Heiko B. Weber
Abstract:
We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron interaction (EEI). We can consistently describe the data with a model for diffusive (magneto)tran…
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We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron interaction (EEI). We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of MR and the theory of EEI in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to EEI from 7 to 3 due to intervalley scattering. In addition, we find a temperature independent ballistic contribution to the MR in classically strong magnetic fields.
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Submitted 27 January, 2012; v1 submitted 26 October, 2011;
originally announced October 2011.
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Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide
Authors:
Daniel Waldmann,
Johannes Jobst,
Felix Fromm,
Florian Speck,
Thomas Seyller,
Michael Krieger,
Heiko B. Weber
Abstract:
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard…
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We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.
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Submitted 27 September, 2011;
originally announced September 2011.
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The quasi-free-standing nature of graphene on H-saturated SiC(0001)
Authors:
F. Speck,
J. Jobst,
F. Fromm,
M. Ostler,
D. Waldmann,
M. Hundhausen,
H. B. Weber,
Th. Seyller
Abstract:
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The laye…
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We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".
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Submitted 5 September, 2011; v1 submitted 21 March, 2011;
originally announced March 2011.
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Resonant vibrations, peak broadening and noise in single molecule contacts: beyond the resonant tunnelling picture
Authors:
Daniel Secker,
Stefan Wagner,
Stefan Ballmann,
Rainer Härtle,
Michael Thoss,
Heiko B. Weber
Abstract:
We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the differential conductance spectra is elucidated. We observe an electronic transition with a vibronic fine structure, which is most frequently smeared out and…
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We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the differential conductance spectra is elucidated. We observe an electronic transition with a vibronic fine structure, which is most frequently smeared out and forms a broad peak. In the usual parameter range we find strong indications that additionally fluctuations become active even at low temperatures. We conclude that the electrical field feeds instabilities, which are triggered by the onset of current. This is underscored by noise measurements that show strong anomalies at the onset of charge transport.
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Submitted 14 October, 2010;
originally announced October 2010.
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How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect
Authors:
Johannes Jobst,
Daniel Waldmann,
Florian Speck,
Roland Hirner,
Duncan K. Maude,
Thomas Seyller,
Heiko B. Weber
Abstract:
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mo…
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We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and the graphene-like quantum Hall effect occurs. This proves that epitaxial graphene is ruled by the same pseudo-relativistic physics observed previously in exfoliated graphene.
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Submitted 13 August, 2009;
originally announced August 2009.
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Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers
Authors:
Konstantin V. Emtsev,
Aaron Bostwick,
Karsten Horn,
Johannes Jobst,
Gary L. Kellogg,
Lothar Ley,
Jessica L. McChesney,
Taisuke Ohta,
Sergey A. Reshanov,
Eli Rotenberg,
Andreas K. Schmid,
Daniel Waldmann,
Heiko B. Weber,
Thomas Seyller
Abstract:
We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here estab…
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We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.
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Submitted 8 August, 2008;
originally announced August 2008.
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Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures
Authors:
D. Beckmann,
H. B. Weber,
H. v. Löhneysen
Abstract:
We have measured the non-local resistance of aluminum-iron spin-valve structures fabricated by e-beam lithography and shadow evaporation. The sample geometry consists of an aluminum bar with two or more ferromagnetic wires forming point contacts to the aluminum at varying distances from each other. In the normal state of aluminum, we observe a spin-valve signal which allows us to control the rel…
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We have measured the non-local resistance of aluminum-iron spin-valve structures fabricated by e-beam lithography and shadow evaporation. The sample geometry consists of an aluminum bar with two or more ferromagnetic wires forming point contacts to the aluminum at varying distances from each other. In the normal state of aluminum, we observe a spin-valve signal which allows us to control the relative orientation of the magnetizations of the ferromagnetic contacts. In the superconducting state, at low temperatures and excitation voltages well below the gap, we observe a spin-dependent non-local resistance which decays on a smaller length scale than the normal-state spin-valve signal. The sign, magnitude and decay length of this signal is consistent with predictions made for crossed Andreev reflection (CAR).
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Submitted 26 November, 2004; v1 submitted 15 April, 2004;
originally announced April 2004.
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Dimensionality effects on non-equilibrium electronic transport in Cu nanobridges
Authors:
D. Beckmann,
H. B. Weber,
H. v. Löhneysen
Abstract:
We report on non-equilibrium electronic transport through normal-metal (Cu) nanobridges coupled to large reservoirs at low temperatures. We observe a logarithmic temperature dependence of the zero-bias conductance, as well as a universal scaling behavior of the differential conductance. Our results are explained by electron-electron interactions in diffusive metals in the zero-dimensional limit.
We report on non-equilibrium electronic transport through normal-metal (Cu) nanobridges coupled to large reservoirs at low temperatures. We observe a logarithmic temperature dependence of the zero-bias conductance, as well as a universal scaling behavior of the differential conductance. Our results are explained by electron-electron interactions in diffusive metals in the zero-dimensional limit.
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Submitted 19 August, 2004; v1 submitted 12 November, 2003;
originally announced November 2003.
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Low-temperature Conductance Measurements On Single Molecules
Authors:
J. Reichert,
H. B. Weber,
M. Mayor,
H. v. Löhneysen
Abstract:
An experimental protocol which allows to perform conductance spectroscopy on organic molecules at low temperatures (T~30 K) has been developed. This extends the method of mechanically controlled break junctions which has recently demonstrated to be suitable to contact single molecules at room temperature. The conductance data obtained at low T with a conjugated sample molecule show a highly impr…
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An experimental protocol which allows to perform conductance spectroscopy on organic molecules at low temperatures (T~30 K) has been developed. This extends the method of mechanically controlled break junctions which has recently demonstrated to be suitable to contact single molecules at room temperature. The conductance data obtained at low T with a conjugated sample molecule show a highly improved data quality with a higher stability, narrower linewidth and substantially reduced noise. Thus the comparability of experimental data with other measurements as well as with theoretical simulations is considerably improved.
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Submitted 12 December, 2002;
originally announced December 2002.
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Contacting single bundles of carbon nanotubes with alternating electric fields
Authors:
R. Krupke,
F. Hennrich,
H. B. Weber,
D. Beckmann,
O. Hampe,
S. Malik,
M. M. Kappes,
H. v. Löhneysen
Abstract:
Single bundles of carbon nanotubes have been selectively deposited from suspensions onto sub-micron electrodes with alternating electric fields. We explore the resulting contacts using several solvents and delineate the differences between Au and Ag as electrode materials. Alignment of the bundles between electrodes occurs at frequencies above 1 kHz. Control over the number of trapped bundles is…
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Single bundles of carbon nanotubes have been selectively deposited from suspensions onto sub-micron electrodes with alternating electric fields. We explore the resulting contacts using several solvents and delineate the differences between Au and Ag as electrode materials. Alignment of the bundles between electrodes occurs at frequencies above 1 kHz. Control over the number of trapped bundles is achieved by choosing an electrode material which interacts strongly with the chemical functional groups of the carbon nanotubes, with superior contacts being formed with Ag electrodes.
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Submitted 31 January, 2002;
originally announced January 2002.
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Driving current through single organic molecules
Authors:
J. Reichert,
R. Ochs,
D. Beckmann,
H. B. Weber,
M. Mayor,
H. v. Loehneysen
Abstract:
We investigate electronic transport through two types of conjugated molecules. Mechanically controlled break-junctions are used to couple thiol endgroups of single molecules to two gold electrodes. Current-voltage characteristics (IVs) of the metal-molecule-metal system are observed. These IVs reproduce the spatial symmetry of the molecules with respect to the direction of current flow. We hereb…
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We investigate electronic transport through two types of conjugated molecules. Mechanically controlled break-junctions are used to couple thiol endgroups of single molecules to two gold electrodes. Current-voltage characteristics (IVs) of the metal-molecule-metal system are observed. These IVs reproduce the spatial symmetry of the molecules with respect to the direction of current flow. We hereby unambigously detect an intrinsic property of the molecule, and are able to distinguish the influence of both the molecule and the contact to the metal electrodes on the transport properties of the compound system.
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Submitted 12 June, 2001;
originally announced June 2001.
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Zero-bias transport anomaly in metallic nanobridges: Magnetic field dependence and universal conductance fluctuations
Authors:
H. B. Weber,
R. Häussler,
H. v. Löhneysen,
J. Kroha
Abstract:
We present data of transport measurements through a metallic nanobridge exhibiting diffusive electron transport. A logarithmic temperature dependence and a zero-bias anomaly in the differential conductance are observed, independent of magnetic field. The data can be described by a single scaling law. The theory of electron-electron interaction in disordered systems, adapted to the case of finite…
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We present data of transport measurements through a metallic nanobridge exhibiting diffusive electron transport. A logarithmic temperature dependence and a zero-bias anomaly in the differential conductance are observed, independent of magnetic field. The data can be described by a single scaling law. The theory of electron-electron interaction in disordered systems, adapted to the case of finite-size systems in non-equilibrium, yields quantitative agreement with experiment. Measurements of universal conductance functuations support the assumptions of the theory about the electronic phase coherence.
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Submitted 21 July, 2000;
originally announced July 2000.
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Non-equilibrium electronic transport and interaction in short metallic nanobridges
Authors:
H. B. Weber,
R. Häussler,
H. v. Löhneysen,
J. Kroha
Abstract:
We have observed interaction effects in the differential conductance $G$ of short, disordered metal bridges in a well-controlled non-equilibrium situation, where the distribution function has a double Fermi step. A logarithmic scaling law is found both for the temperature and for the voltage dependence of $G$ in all samples. The absence of magnetic field dependence and the low dimensionality of…
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We have observed interaction effects in the differential conductance $G$ of short, disordered metal bridges in a well-controlled non-equilibrium situation, where the distribution function has a double Fermi step. A logarithmic scaling law is found both for the temperature and for the voltage dependence of $G$ in all samples. The absence of magnetic field dependence and the low dimensionality of our samples allow us to distinguish between several possible interaction effects, proposed recently in nanoscopic samples. The universal scaling curve is explained quantitatively by the theory of electron-electron interaction in diffusive metals, adapted to the present case, where the sample size is smaller than the thermal diffusion length.
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Submitted 21 May, 2001; v1 submitted 5 July, 2000;
originally announced July 2000.
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Conductance oscillations in mesoscopic rings: microscopic versus macroscopic picture
Authors:
R. Haeussler,
E. Scheer,
H. B. Weber,
H. v. Loehneysen
Abstract:
The phase of Aharonov-Bohm oscillations in mesoscopic metal rings in the presence of a magnetic field can be modulated by application of a DC-bias current I_DC. We address the question of how a variation of I_DC and hence of the microscopic phases of the electronic wave functions results in the macroscopic phase of the conductance oscillations. Whereas the first one can be varied continuously th…
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The phase of Aharonov-Bohm oscillations in mesoscopic metal rings in the presence of a magnetic field can be modulated by application of a DC-bias current I_DC. We address the question of how a variation of I_DC and hence of the microscopic phases of the electronic wave functions results in the macroscopic phase of the conductance oscillations. Whereas the first one can be varied continuously the latter has to be quantized for a ring in two-wire configuration by virtue of the Onsager symmetry relations. We observe a correlation between a phase flip by +/- pi and the amplitude of the oscillations.
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Submitted 17 April, 2000;
originally announced April 2000.
