Showing 1–9 of 9 results for author: Weber, C P

Transient Drude Response Dominates Near-Infrared Pump-Probe Reflectivity in Nodal-Line Semimetals ZrSiS and ZrSiSe

Authors: Robert J. Kirby, Austin Ferrenti, Caroline Weinberg, Sebastian Klemenz, Mohamed Oudah, Chris P. Weber, Daniele Fausti, Gregory D. Scholes, Leslie M. Schoop

Abstract: The ultrafast optical response of two nodal-line semimetals, ZrSiS and ZrSiSe, was studied in the near-infrared using transient reflectivity. The two materials exhibit similar responses, characterized by two features, well resolved in time and energy. The first transient feature decays after a few hundred femtoseconds, while the second lasts for nanoseconds. Using Drude-Lorentz fits of the materia… ▽ More The ultrafast optical response of two nodal-line semimetals, ZrSiS and ZrSiSe, was studied in the near-infrared using transient reflectivity. The two materials exhibit similar responses, characterized by two features, well resolved in time and energy. The first transient feature decays after a few hundred femtoseconds, while the second lasts for nanoseconds. Using Drude-Lorentz fits of the materials' equilibrium reflectance, we show that the fast response is well-represented by a decrease of the Drude plasma frequency, and the second feature by an increase of the Drude scattering rate. This directly connects the transient data to a physical picture in which carriers, after being excited away from the Fermi energy, return to that vicinity within a few hundred femtoseconds by sharing their excess energy with the phonon bath, resulting in a hot lattice that relaxes only through slow diffusion processes (ns). The emerging picture reveals that the sudden change of the density of carriers at the Fermi level instantaneously modifies the transport properties of the materials on a timescale not compatible with electron phonon thermalization and is largely driven by the reduced density of states at the nodal line. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Similar ultrafast dynamics of several dissimilar Dirac and Weyl semimetals

Authors: Chris P. Weber, Bryan S. Berggren, Madison G. Masten, Thomas C. Ogloza, Skylar Deckoff-Jones, Julien Madéo, Michael K. L. Man, Keshav M. Dani, Lingxiao Zhao, Genfu Chen, Jinyu Liu, Zhiqiang Mao, Leslie M. Schoop, Bettina Lotsch, Stuart S. P. Parkin, Mazhar Ali

Abstract: Recent years have seen the rapid discovery of solids whose low-energy electrons have a massless, linear dispersion, such as Weyl, line-node, and Dirac semimetals. The remarkable optical properties predicted in these materials show their versatile potential for optoelectronic uses. However, little is known of their response in the picoseconds after absorbing a photon. Here we measure the ultrafast… ▽ More Recent years have seen the rapid discovery of solids whose low-energy electrons have a massless, linear dispersion, such as Weyl, line-node, and Dirac semimetals. The remarkable optical properties predicted in these materials show their versatile potential for optoelectronic uses. However, little is known of their response in the picoseconds after absorbing a photon. Here we measure the ultrafast dynamics of four materials that share non-trivial band structure topology but that differ chemically, structurally, and in their low-energy band structures: ZrSiS, which hosts a Dirac line node and Dirac points; TaAs and NbP, which are Weyl semimetals; and Sr$_{1-y}$Mn$_{1-z}$Sb$_2$, in which Dirac fermions coexist with broken time-reversal symmetry. After photoexcitation by a short pulse, all four relax in two stages, first sub-picosecond, and then few-picosecond. Their rapid relaxation suggests that these and related materials may be suited for optical switches and fast infrared detectors. The complex change of refractive index shows that photoexcited carrier populations persist for a few picoseconds. △ Less

Submitted 18 December, 2017; originally announced December 2017.

Journal ref: Journal of Applied Physics 122, 223102 (2017)

Transient reflectance of photoexcited Cd$_3$As$_2$

Authors: C. P. Weber, Ernest Arushanov, Bryan S. Berggren, Tahereh Hosseini, Nikolai Kouklin, Alex Nateprov

Abstract: We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd3As2, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two processes, one of duration 500 fs and the other of duration 3.1 ps. By measuring the complex phase of the change in reflectance, we determine that the faster signa… ▽ More We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd3As2, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two processes, one of duration 500 fs and the other of duration 3.1 ps. By measuring the complex phase of the change in reflectance, we determine that the faster signal corresponds to a decrease in absorption, and the slower signal to a decrease in the light's phase velocity, at the probe energy. We attribute these signals to electrons' filling of phase space, first near the photon energy and later at lower energy. We attribute their decay to cooling by rapid emission of optical phonons, then slower emission of acoustic phonons. We also present evidence that both the electrons and the lattice are strongly heated. △ Less

Submitted 11 June, 2015; v1 submitted 24 February, 2015; originally announced February 2015.

Comments: 8 pages, 7 figures. Differs from the previous version in incorporating changes made during the review process and new appendices. Differs from the published version in including section headings and in omitting AIP copy-edits. No substantial differences in scientific conclusions from either version

Journal ref: Appl. Phys. Lett. 106, 231904 (2015)

Diffusion of degenerate minority carriers in a p-type semiconductor

Authors: C. P. Weber, Eric A. Kittlaus

Abstract: We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2E16 to 6E17 cm-3. After the first few picoseconds the grating decays primarily due to ambipolar diffusion. While at low density we observe a regime in which the ambipolar diffusion is e… ▽ More We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2E16 to 6E17 cm-3. After the first few picoseconds the grating decays primarily due to ambipolar diffusion. While at low density we observe a regime in which the ambipolar diffusion is electron-dominated and increases rapidly with n, at high n it appears to saturate at 34 cm2/s. We present a simple calculation that reproduces the main results of our measurements as well as of previously published measurements that had shown diffusion to be a flat or decreasing function of n. By accounting for effect of density on charge susceptibility we show that, in p-type semiconductors, the regime we observe of increasing ambipolar diffusion is unique to heavy doping and low temperature, where both the holes and electrons are degenerate; in this regime the electronic and ambipolar diffusion are nearly equal. The saturation is identified as a crossover to ambipolar diffusion dominated by the majority carriers, the holes. At short times the transient-grating signal rises gradually. This rise reveals cooling of hot electrons and, at high photocarrier density, allows us to measure ambipolar diffusion of 110 cm2/s in the hot-carrier regime. △ Less

Submitted 1 March, 2013; originally announced March 2013.

Journal ref: Journal of Applied Physics 113(5), 053711 (2013)

Rapid diffusion of electrons in GaMnAs

Authors: C. P. Weber, Eric A. Kittlaus, Kassandra B. Mattia, Christopher J. Waight, J. Hagmann, X. Liu, M. Dobrowolska, J. K. Furdyna

Abstract: We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a… ▽ More We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs. △ Less

Submitted 7 June, 2013; v1 submitted 1 March, 2013; originally announced March 2013.

Comments: 5 pages, 3 figures. Differs from the previous version in incorporating additional data and changes made during the review process. Differs from the published version in including section headings and in omitting AIP copy-edits. No substantial differences in scientific conclusions from either version

Journal ref: Appl. Phys. Lett. 102, 182402 (2013)

Measurement of spin diffusion in semi-insulating GaAs

Authors: C. P. Weber, Craig A. Benko, Stanley C. Hiew

Abstract: We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion coefficient of 88 +/- 12 cm2/s is roughly constant at temperatures from 15 K to 150 K, and the spin diffusion length is at least 450 nm. We show that it is possib… ▽ More We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion coefficient of 88 +/- 12 cm2/s is roughly constant at temperatures from 15 K to 150 K, and the spin diffusion length is at least 450 nm. We show that it is possible to use spin diffusion to estimate the electron diffusion coefficient. Due to electron-electron interactions, the electron diffusion is 1.4 times larger than the spin diffusion. △ Less

Submitted 31 October, 2011; originally announced October 2011.

Journal ref: Journal of Applied Physics 109, 106101 (2011)

Non-diffusive spin dynamics in a two-dimensional electron gas

Authors: C. P. Weber, J. Orenstein, B. Andrei Bernevig, Shou-Cheng Zhang, Jason Stephens, D. D. Awschalom

Abstract: We describe measurements of spin dynamics in the two-dimensional electron gas in GaAs/GaAlAs quantum wells. Optical techniques, including transient spin-grating spectroscopy, are used to probe the relaxation rates of spin polarization waves in the wavevector range from zero to $6\times 10^4$ cm$^{-1}$. We find that the spin polarization lifetime is maximal at nonzero wavevector, in contrast with… ▽ More We describe measurements of spin dynamics in the two-dimensional electron gas in GaAs/GaAlAs quantum wells. Optical techniques, including transient spin-grating spectroscopy, are used to probe the relaxation rates of spin polarization waves in the wavevector range from zero to $6\times 10^4$ cm$^{-1}$. We find that the spin polarization lifetime is maximal at nonzero wavevector, in contrast with expectation based on ordinary spin diffusion, but in quantitative agreement with recent theories that treat diffusion in the presence of spin-orbit coupling. △ Less

Submitted 2 October, 2006; originally announced October 2006.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 98, 076604 (2007)

Observation of spin Coulomb drag in a two-dimensional electron gas

Authors: C. P. Weber, N. Gedik, J. E. Moore, J. Orenstein, Jason Stephens, D. D. Awschalom

Abstract: An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin, which offer potential advantages in dissipation, size, and speed over charge-based devices. However, these advantages bring with them additional complexity. Because each electron car… ▽ More An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin, which offer potential advantages in dissipation, size, and speed over charge-based devices. However, these advantages bring with them additional complexity. Because each electron carries a single, fixed value (-e) of charge, the electrical current carried by a gas of electrons is simply proportional to its total momentum. A fundamental consequence is that the charge current is not affected by interactions that conserve total momentum, notably collisions among the electrons themselves. In contrast, the electron's spin along a given spatial direction can take on two values, "up" and "down", so that the spin current and momentum need not be proportional. Although the transport of spin polarization is not protected by momentum conservation, it has been widely assumed that, like the charge current, spin current is unaffected by electron-electron (e-e) interactions. Here we demonstrate experimentally not only that this assumption is invalid, but that over a broad range of temperature and electron density, the flow of spin polarization in a two-dimensional gas of electrons is controlled by the rate of e-e collisions. △ Less

Submitted 1 December, 2005; originally announced December 2005.

Journal ref: Published in Nature, 437 pp. 1330-3 (27 Oct. 2005)

Fractional power-law conductivity in SrRuO_3 and its consequences

Authors: J. S. Dodge, C. P. Weber, J. Corson, J. Orenstein, Z. Schlesinger, J. W. Reiner, M. R. Beasley

Abstract: We combine the results of terahertz time-domain spectroscopy with far-infrared transmission and reflectivity to obtain the conductivity of SrRuO_3 over an unprecedented continuous range in frequency, allowing us to characterize the approach to zero frequency as a function of temperature. We show that the conductivity follows a simple phenomenological form, with an analytic structure fundamentall… ▽ More We combine the results of terahertz time-domain spectroscopy with far-infrared transmission and reflectivity to obtain the conductivity of SrRuO_3 over an unprecedented continuous range in frequency, allowing us to characterize the approach to zero frequency as a function of temperature. We show that the conductivity follows a simple phenomenological form, with an analytic structure fundamentally different from that predicted by the standard theory of metals. △ Less

Submitted 19 June, 2000; originally announced June 2000.

Comments: 4 pages, 3 figures, revtex4b4