-
Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields
Authors:
Takuya Iwasaki,
Motoi Kimata,
Yoshifumi Morita,
Shu Nakaharai,
Yutaka Wakayama,
Eiichiro Watanabe,
Daiju Tsuya,
Kenji Watanabe,
Takashi Taniguchi,
Satoshi Moriyama
Abstract:
Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with a small twist angle between the graphene and one of the two hBN layers. Because of the modulation due to the hBN, higher-generation Dirac points can emerge with a narrow bandwidth…
▽ More
Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with a small twist angle between the graphene and one of the two hBN layers. Because of the modulation due to the hBN, higher-generation Dirac points can emerge with a narrow bandwidth and van Hove singularities. In the moiré superlattice devices, we can therefore access the higher-generation Dirac points by in-situ gate tuning. This study is based on our previous paper (Appl. Phys. Express 13, 035003 (2020)). Here we show more extended data by applying high magnetic fields up to ~24 T. We also comment on the temperature dependence of the resistivity and magnetoresistance with reference to the 'plain' BLG data for a comparative study.
△ Less
Submitted 1 October, 2021;
originally announced October 2021.
-
Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers
Authors:
Yuta Seo,
Satoru Masubuchi,
Eisuke Watanabe,
Momoko Onodera,
Rai Moriya,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma aniso…
▽ More
We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, this method allows us to pattern metal electrodes on h-BN over a second graphene layer. Subsequent electron-beam lithography and evaporation fabricate metal contacts at the graphene edges that are active down to cryogenic temperatures. This fabrication method is demonstrated by the preparation of a graphene Hall bar with a graphite back-gate and double bilayer-graphene Hall bar devices. The high flexibility of the device geometries enabled by this method creates access to a variety of experiments on electrostatically coupled graphene layers.
△ Less
Submitted 4 December, 2020;
originally announced December 2020.
-
Deep-Learning-Based Image Segmentation Integrated with Optical Microscopy for Automatically Searching for Two-Dimensional Materials
Authors:
Satoru Masubuchi,
Eisuke Watanabe,
Yuta Seo,
Shota Okazaki,
Takao Sasagawa,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials…
▽ More
Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials (graphene, hBN, MoS2, and WTe2). The inference algorithm is run on a 1024 x 1024 px2 optical microscope images for 200 ms, enabling the real-time detection of 2D materials. The detection process is robust against changes in the microscopy conditions, such as illumination and color balance, which obviates the parameter-tuning process required for conventional rule-based detection algorithms. Integrating the algorithm with a motorized optical microscope enables the automated searching and cataloging of 2D materials. This development will allow researchers to utilize unlimited amounts of 2D materials simply by exfoliating and running the automated searching process.
△ Less
Submitted 28 October, 2019;
originally announced October 2019.
-
Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
Authors:
Kosuke Endo,
Katsuyoshi Komatsu,
Takuya Iwasaki,
Eiichiro Watanabe,
Daiju Tsuya,
Kenji Watanabe,
Takashi Taniguchi,
Yutaka Noguchi,
Yutaka Wakayama,
Yoshifumi Morita,
Satoshi Moriyama
Abstract:
Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport in bilayer graphene (BLG) superlattices encapsulated between two hexagonal boron nitride (hBN) layers, which formed hBN/BLG/hBN moiré superlattices. We then employed these superlattices to detect a long-range charge-neut…
▽ More
Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport in bilayer graphene (BLG) superlattices encapsulated between two hexagonal boron nitride (hBN) layers, which formed hBN/BLG/hBN moiré superlattices. We then employed these superlattices to detect a long-range charge-neutral valley current using an all-electrical method. The moiré superlattice with broken inversion symmetry leads to a hot spot with Berry curvature accumulating at the charge neutral point (CNP), and it harbors satellites of the CNP. We observed nonlocal resistance on the order of 1 $\text{k}Ω$, which obeys a scaling relation. This nonlocal resistance evolves from the quantum Hall effect but without magnetic field/time-reversal symmetry breaking, which is associated with a hot-spot-induced topological valley current. This study should pave the way to developing a Berry-phase-sensitive probe to detect hot spots in gapped Dirac materials with inversion-symmetry breaking.
△ Less
Submitted 23 June, 2019; v1 submitted 2 March, 2019;
originally announced March 2019.
-
Observation of superconductivity in bilayer graphene/hexagonal boron nitride superlattices
Authors:
Satoshi Moriyama,
Yoshifumi Morita,
Katsuyoshi Komatsu,
Kosuke Endo,
Takuya Iwasaki,
Shu Nakaharai,
Yutaka Noguchi,
Yutaka Wakayama,
Eiichiro Watanabe,
Daiju Tsuya,
Kenji Watanabe,
Takashi Taniguchi
Abstract:
A class of low-dimensional superconductivity (SC), such as most of "atomic-layer" SCs, has survived only under certain circumstances, implying a role of the substrate. Moreover, in some recent SC discoveries at heterogeneous interfaces, SC was buried in bulk solids and ex situ. Genuine atomic-layer SC is difficult to access. Here we report a novel route to atomic-layer SC in graphene superlattices…
▽ More
A class of low-dimensional superconductivity (SC), such as most of "atomic-layer" SCs, has survived only under certain circumstances, implying a role of the substrate. Moreover, in some recent SC discoveries at heterogeneous interfaces, SC was buried in bulk solids and ex situ. Genuine atomic-layer SC is difficult to access. Here we report a novel route to atomic-layer SC in graphene superlattices. Our device comprises stacked non-twisted bilayer graphene (BLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN Moiré superlattices. Upon in situ electrostatic doping, we observe an SC dome with a critical temperature up to $T_{\rm{BKT}} = 14 \rm{K}$, corresponding to the confinement of vortices. We believe that SC via doping Dirac materials is ubiquitous in condensed matter and that this study paves a way toward the design of a new SC family.
△ Less
Submitted 2 September, 2019; v1 submitted 27 January, 2019;
originally announced January 2019.
-
Observation of the quantum valley Hall state in ballistic graphene superlattices
Authors:
K. Komatsu,
Y. Morita,
E. Watanabe,
D. Tsuya,
K. Watanabe,
T. Taniguchi,
S. Moriyama
Abstract:
In graphene superlattices, bulk topological currents can lead to long-range charge-neutral flow and non-local resistance near Dirac points. A ballistic version of these phenomena has never been explored. Here, we report transport properties of ballistic graphene superlattices. This allows us to study and exploit giant non-local resistances with a large valley Hall angle without a magnetic field. I…
▽ More
In graphene superlattices, bulk topological currents can lead to long-range charge-neutral flow and non-local resistance near Dirac points. A ballistic version of these phenomena has never been explored. Here, we report transport properties of ballistic graphene superlattices. This allows us to study and exploit giant non-local resistances with a large valley Hall angle without a magnetic field. In the low-temperature regime, a crossover occurs toward a new state of matter, referred to as a quantum valley Hall state (qVHS), which is an analog of the quantum Hall state without a magnetic field. Furthermore, a non-local resistance plateau, implying rigidity of the qVHS, emerges as a function of magnetic field, and the collapse of this plateau is observed, which is considered as a manifestation of valley/pseudospin magnetism.
△ Less
Submitted 29 May, 2018;
originally announced May 2018.
-
Field-induced Confined States in Graphene
Authors:
S. Moriyama,
Y. Morita,
E. Watanabe,
D. Tsuya
Abstract:
We report an approach to confine the carriers in single-layer graphene, which leads to quantum devices with field-induced quantum confinement. We demonstrated that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene device. Our experimental results show that field-induced quantum dots are realized in graphene, and a quantum confinement-deconfinement tra…
▽ More
We report an approach to confine the carriers in single-layer graphene, which leads to quantum devices with field-induced quantum confinement. We demonstrated that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene device. Our experimental results show that field-induced quantum dots are realized in graphene, and a quantum confinement-deconfinement transition is switched by the magnetic field.
△ Less
Submitted 12 November, 2013; v1 submitted 21 June, 2012;
originally announced June 2012.
-
Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars
Authors:
Hikari Tomori,
Akinobu Kanda,
Hidenori Goto,
Youiti Ootuka,
Kazuhito Tsukagoshi,
Satoshi Moriyama,
Eiichiro Watanabe,
Daiju Tsuya
Abstract:
A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman…
▽ More
A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.
△ Less
Submitted 8 June, 2011;
originally announced June 2011.
-
Single-layer Graphene Nearly 100% Covering an Entire Substrate
Authors:
Mingsheng Xu,
Daisuke Fujita,
Keisuke Sagisaka,
Eiichiro Watanabe,
Nobutaka Hanagata
Abstract:
Graphene has recently attracted a great deal of interest in both academia and industry because of its unique electronic and optical properties [1,2], as well as its chemical, thermal, and mechanical properties. The superb characteristics of graphene make this material one of the most promising candidates for various applications, such as ultrafast electronic circuits [1] and photodetectors [2], cl…
▽ More
Graphene has recently attracted a great deal of interest in both academia and industry because of its unique electronic and optical properties [1,2], as well as its chemical, thermal, and mechanical properties. The superb characteristics of graphene make this material one of the most promising candidates for various applications, such as ultrafast electronic circuits [1] and photodetectors [2], clean and renewable energy [3], and rapid single-molecule DNA sequencing [4,5]. The electronic properties of the graphene system rely heavily on the number of graphene layers [6] and effects on the coupling with the underlying substrate. Graphene can be produced by mechanical exfoliation of graphite, solution approaches [7,8], thermal decomposition of SiC [9,10], and chemical vapor deposition/segregation on catalytic metals [11-17]. Despite significant progress in graphene synthesis, production with fine control over the thickness of the film remains a considerable challenge. Here, we report on the synthesis of nearly 100% coverage of single-layer graphene on a Ni(111) surface with carbon atoms diffused from a highly orientated pyrolytic graphite (HOPG) substrate. Our results demonstrate how fine control of thickness and structure can be achieved by optimization of equilibrium processes of carbon diffusion from HOPG, segregation from Ni, and carbon diffusion at a Ni surface. Our method represents a significant step toward the scalable synthesis of graphene films with high structural qualities and finely controlled thicknesses and toward realizing the unique properties of graphene.
△ Less
Submitted 25 June, 2010;
originally announced June 2010.
