Spectral effects on the energy harvesting efficiency of 2- and 4-terminal tandem photovoltaics
Authors:
Robert Witteck,
John. F. Geisz,
Emily. L. Warren,
William. E. McMahon
Abstract:
In this work, we investigate how a varying spectral irradiance and top cell bandgap affect the energy yield of 2T and 4T perovskite//silicon tandem solar cells under outdoor operating conditions. For the comparison, we first validate an optoelectronic model employing a 1-year outdoor data set for a 4T mechanical stacked GaAs on Silicon tandem device. We then use our verified model to simulate pero…
▽ More
In this work, we investigate how a varying spectral irradiance and top cell bandgap affect the energy yield of 2T and 4T perovskite//silicon tandem solar cells under outdoor operating conditions. For the comparison, we first validate an optoelectronic model employing a 1-year outdoor data set for a 4T mechanical stacked GaAs on Silicon tandem device. We then use our verified model to simulate perovskite//silicon tandem devices with a varying perovskite top cell bandgap for a location in Golden, Colorado, USA. We introduce a spectral binning method to efficiently reduce and improve the visualization of the 1-min-resolved environmental data while maintaining the simulation accuracy. Our findings reveal that, for a device that is current-matched under standard testing conditions, the annual spectral deviation reduces the energy harvesting efficiency by only 2%$_\mathrm{rel}$. When additional realistic losses for the 4T are taken into account, 2T devices are shown to have an energy-harvesting efficiency that is at parity or higher. Deviations in the top cell bandgap of more than 0.1 eV from current matching result in a reduced energy-harvesting efficiency of more than 5%$_\mathrm{rel}$ for the 2T tandem device.
△ Less
Submitted 10 October, 2023;
originally announced October 2023.
Solar energy conversion properties and defect physics of ZnSiP$_2$
Authors:
Aaron D. Martinez,
Emily L. Warren,
Prashun Gorai,
Kasper A. Borup,
Darius Kuciauskas,
Patricia C. Dippo,
Brenden R. Ortiz,
Robin T. Macaluso,
Sau D. Nguyen,
Ann L. Greenaway,
Shannon W. Boettcher,
Andrew G. Norman,
Vladan Stevanović,
Eric S. Toberer,
Adele C. Tamboli
Abstract:
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with…
▽ More
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials.
△ Less
Submitted 29 December, 2015; v1 submitted 17 June, 2015;
originally announced June 2015.
