Showing 1–12 of 12 results for author: Ware, M

Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features

Authors: Mirsaeid Sarollahi, Mohammad Zamani Alavijeh, Rohith Allaparthi, Reem Alhelais, Malak A. Refaei, Md Helal Uddin Maruf, Morgan E. Ware

Abstract: The optical properties of V graded InGaN solar cells are studied. Graded InGaN well structures with the indium composition increasing then decreasing in a V shaped pattern have been designed. Through polarization doping, this naturally creates alternating p-type and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations rangin… ▽ More The optical properties of V graded InGaN solar cells are studied. Graded InGaN well structures with the indium composition increasing then decreasing in a V shaped pattern have been designed. Through polarization doping, this naturally creates alternating p-type and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations ranging from 20% to 80%, while maintaining a constant overall structure thicknesses of 100 nm. The solar cell parameters under fully strained and relaxed conditions are considered. The results show that a maximum efficiency of 5.5%, under fully strained condition occurs at x=60%. Solar cell efficiency under relaxed conditions increases to a maximum of 8.3% at 90%. While Vegards law predicts the bandgap under relaxed conditions, a Vegard like law is empirically determined from the output of Nextnano for varying In compositions in order to calculate solar cell parameters under strain. △ Less

Submitted 7 February, 2022; originally announced February 2022.

Comments: This simulation work was done by Nextnano+ and Matlab. 20 pages, 13 Figures

Study of simulations of double graded InGaN solar cell structures

Authors: Mirsaeid Sarollahi, Manal A. Aldawsari, Rohith Allaparthi, Malak A. Refaei, Reem Alhelais, Md Helal Uddin Maruf, Yuriy Mazur, Morgan E. Ware

Abstract: The performances of various configurations of InGaN solar cells are compared using nextnano software. Here we compare a flat base graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN structure with InxGa1-xN contact layers, i.e. a homojunction. The doping in the graded structures are the result of polarization doping at each edge (10 nm from each… ▽ More The performances of various configurations of InGaN solar cells are compared using nextnano software. Here we compare a flat base graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN structure with InxGa1-xN contact layers, i.e. a homojunction. The doping in the graded structures are the result of polarization doping at each edge (10 nm from each side) due to the graded structure, while the well structures are intentionally doped at each edge (10 nm from each side) equal to the doping concentration in the graded structure. The solar cells are characterized by their open-circuit voltage, V_oc, short circuit current, I_sc, solar efficiency, and energy band diagram. The results indicate that an increase in I_sc and efficiency results from increasing both the fixed and the maximum indium compositions, while the V_oc decreases. The maximum efficiency is obtained for the InGaN well with 60% In. △ Less

Submitted 19 October, 2021; originally announced October 2021.

Comments: 14 pages, 12 figures

Miniaturizing transmon qubits using van der Waals materials

Authors: Abhinandan Antony, Martin V. Gustafsson, Guilhem J. Ribeill, Matthew Ware, Anjaly Rajendran, Luke C. G. Govia, Thomas A. Ohki, Takashi Taniguchi, Kenji Watanabe, James Hone, Kin Chung Fong

Abstract: Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, as recently demonstrated in systems of superconducting qubits. However, these qubits have large footprints due to their large capacitor electrodes needed to suppress losses by avoiding dielectric materials. This tactic hinders scaling by increasing parasitic coupling among ci… ▽ More Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, as recently demonstrated in systems of superconducting qubits. However, these qubits have large footprints due to their large capacitor electrodes needed to suppress losses by avoiding dielectric materials. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of the van der Waals (vdW) materials to reduce the qubit area by a factor of $>1000$ while preserving the required capacitance without increasing substantial loss. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide (NbSe$_2$) and insulating hexagonal-boron nitride (hBN). We measure a vdW transmon $T_1$ relaxation time of 1.06 $μ$s, which demonstrates a path to achieve high-qubit-density quantum processors with long coherence times, and illustrates the broad utility of layered heterostructures in low-loss, high-coherence quantum devices. △ Less

Submitted 13 May, 2022; v1 submitted 6 September, 2021; originally announced September 2021.

Comments: 6 pages, 5 figures, and 1 table

Magnetically controlled exciton transfer in hybrid quantum dot-quantum well nanostructures

Authors: V. Laurindo Jr., Yu. I. Mazur, E. R. Cardozo de Oliveira, B. Alén, M. E. Ware, E. Marega Jr., Z. Ya. Zhuchenko, G. G. Tarasov, G. E. Marques, M. D. Teodoro, G. J. Salamo

Abstract: A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in… ▽ More A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in the QD PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL. △ Less

Submitted 15 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 100, 035309 (2019)

Transient dynamics of a superconducting nonlinear oscillator

Authors: P. Bhupathi, Peter Groszkowski, M. P. DeFeo, Matthew Ware, Frank K. Wilhelm, B. L. T. Plourde

Abstract: We investigate the transient dynamics of a lumped-element oscillator based on a dc superconducting quantum interference device (SQUID). The SQUID is shunted with a capacitor forming a nonlinear oscillator with resonance frequency in the range of several GHz. The resonance frequency is varied by tuning the Josephson inductance of the SQUID with on-chip flux lines. We report measurements of decaying… ▽ More We investigate the transient dynamics of a lumped-element oscillator based on a dc superconducting quantum interference device (SQUID). The SQUID is shunted with a capacitor forming a nonlinear oscillator with resonance frequency in the range of several GHz. The resonance frequency is varied by tuning the Josephson inductance of the SQUID with on-chip flux lines. We report measurements of decaying oscillations in the time domain following a brief excitation with a microwave pulse. The nonlinearity of the SQUID oscillator is probed by observing the ringdown response for different excitation amplitudes while the SQUID potential is varied by adjusting the flux bias. Simulations are performed on a model circuit by numerically solving the corresponding Langevin equations incorporating the SQUID potential at the experimental temperature and using parameters obtained from separate measurements characterizing the SQUID oscillator. Simulations are in good agreement with the experimental observations of the ringdowns as a function of applied magnetic flux and pulse amplitude. We observe a crossover between the occurrence of ringdowns close to resonance and adiabatic following at larger detuning from the resonance. We also discuss the occurrence of phase jumps at large amplitude drive. Finally, we briefly outline prospects for a readout scheme for superconducting flux qubits based on the discrimination between ringdown signals for different levels of magnetic flux coupled to the SQUID. △ Less

Submitted 14 February, 2016; v1 submitted 26 April, 2015; originally announced April 2015.

Comments: 15 pages, 9 figures

Journal ref: Phys. Rev. Applied 5, 024002 (2016)

Copper waveguide cavities with reduced surface loss for coupling to superconducting qubits

Authors: Daniela F. Bogorin, D. T. McClure, Matthew Ware, B. L. T. Plourde

Abstract: Significant improvements in superconducting qubit coherence times have been achieved recently with three-dimensional microwave waveguide cavities coupled to transmon qubits. While many of the measurements in this direction have utilized superconducting aluminum cavities, other recent work has involved qubits coupled to copper cavities with coherence times approaching 0.1 ms. The copper provides a… ▽ More Significant improvements in superconducting qubit coherence times have been achieved recently with three-dimensional microwave waveguide cavities coupled to transmon qubits. While many of the measurements in this direction have utilized superconducting aluminum cavities, other recent work has involved qubits coupled to copper cavities with coherence times approaching 0.1 ms. The copper provides a good path for thermalizing the cavity walls and qubit chip, although the substantial cavity loss makes conventional dispersive qubit measurements challenging. We are exploring various approaches for improving the quality factor of three-dimensional copper cavities, including electropolishing and coating with superconducting layers of tin. We have characterized these cavities on multiple cooldowns and found the tin-plating to be robust. In addition, we have performed coherence measurements on transmon qubits in these cavities and observed promising performance. △ Less

Submitted 10 September, 2014; originally announced September 2014.

Comments: 7 pages, 6 figures; published in ISEC 2013 Special Issue of IEEE Transactions on Applied Superconductivity

Journal ref: IEEE Transactions on Applied Superconductivity, 24(4), 1700207 (2014)

First-order sideband transitions with flux-driven asymmetric transmon qubits

Authors: J. D. Strand, Matthew Ware, Félix Beaudoin, T. A. Ohki, B. R. Johnson, Alexandre Blais, B. L. T. Plourde

Abstract: We demonstrate rapid, first-order sideband transitions between a superconducting resonator and a frequency-modulated transmon qubit. The qubit contains a substantial asymmetry between its Josephson junctions leading to a linear portion of the energy band near the resonator frequency. The sideband transitions are driven with a magnetic flux signal of a few hundred MHz coupled to the qubit. This mod… ▽ More We demonstrate rapid, first-order sideband transitions between a superconducting resonator and a frequency-modulated transmon qubit. The qubit contains a substantial asymmetry between its Josephson junctions leading to a linear portion of the energy band near the resonator frequency. The sideband transitions are driven with a magnetic flux signal of a few hundred MHz coupled to the qubit. This modulates the qubit splitting at a frequency near the detuning between the dressed qubit and resonator frequencies, leading to rates up to 85 MHz for exchanging quanta between the qubit and resonator. △ Less

Submitted 21 June, 2013; v1 submitted 3 January, 2013; originally announced January 2013.

Comments: 4.5 pages, 4 figures; published version

Journal ref: Physical Review B 87, 220505(R) (2013)

Process verification of two-qubit quantum gates by randomized benchmarking

Authors: A. D. Córcoles, Jay M. Gambetta, Jerry M. Chow, John A. Smolin, Matthew Ware, J. D. Strand, B. L. T. Plourde, M. Steffen

Abstract: We implement a complete randomized benchmarking protocol on a system of two superconducting qubits. The protocol consists of randomizing over gates in the Clifford group, which experimentally are generated via an improved two-qubit cross-resonance gate implementation and single-qubit unitaries. From this we extract an optimal average error per Clifford of 0.0936. We also perform an interleaved exp… ▽ More We implement a complete randomized benchmarking protocol on a system of two superconducting qubits. The protocol consists of randomizing over gates in the Clifford group, which experimentally are generated via an improved two-qubit cross-resonance gate implementation and single-qubit unitaries. From this we extract an optimal average error per Clifford of 0.0936. We also perform an interleaved experiment, alternating our optimal two-qubit gate with random two-qubit Clifford gates, to obtain a two-qubit gate error of 0.0653. We compare these values with a two-qubit gate error of ~0.12 obtained from quantum process tomography, which is likely limited by state preparation and measurement errors. △ Less

Submitted 2 November, 2012; v1 submitted 25 October, 2012; originally announced October 2012.

Comments: 4 figures plus supplementary material

Journal ref: Phys. Rev. A 87, 030301(R) (2013)

Polarized fine structure in the excitation spectrum of a negatively charged quantum dot

Authors: M. E. Ware, E. A. Stinaff, D. Gammon, M. F. Doty, A. S. Bracker, D. Gershoni, V. L. Korenev, S. C. Badescu, Y. Lyanda-Geller, T. L. Reinecke

Abstract: We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the… ▽ More We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wavefunctions through asymmetric e-e and e-h exchange interactions. △ Less

Submitted 23 June, 2005; originally announced June 2005.

Journal ref: Phys. Rev. Lett. 95 (2005) 177403

Electrical Spin Pumping of Quantum Dots at Room Temperature

Authors: C. H. Li, G. Kioseoglou, O. M. J. van t Erve, M. E. Ware, D. Gammon, R. M. Stroud, B. T. Jonker, R. Mallory, M. Yasar, A. Petrou

Abstract: We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temper… ▽ More We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices. △ Less

Submitted 31 January, 2005; originally announced January 2005.

Comments: 4 figures, accepted by Appl. Phys. Lett

Optical pumping of electronic and nuclear spin in single charge-tunable quantum dots

Authors: A. S. Bracker, E. A. Stinaff, D. Gammon, M. E. Ware, J. G. Tischler, A. Shabaev, Al. L. Efros, D. Park, D. Gershoni, V. L. Korenev, I. A. Merkulov

Abstract: We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same sign as the net charge of the dot. Optical pumping of ground state electron spins enhances this effect, as demonstrated through the first measureme… ▽ More We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same sign as the net charge of the dot. Optical pumping of ground state electron spins enhances this effect, as demonstrated through the first measurements of the Hanle effect on an individual quantum dot. With the Overhauser effect in a high longitudinal magnetic field, we demonstrate efficient optical pumping of the quantum dot's nuclear spins for all three charge states. △ Less

Submitted 20 August, 2004; originally announced August 2004.

Suppression of Dyakonov-Perel Spin Relaxation in high mobility n-GaAs

Authors: R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, N. K. Poletaev, B. P. Zakharchenya, E. A. Stinaff, D. Gammon, A. S. Bracker, M. E. Ware

Abstract: We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-con… ▽ More We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-consistently interpreted as a precessional spin relaxation induced by a random spin-orbit field, the correlation time of this random field, surprisingly, is much shorter than, and is independent of, the momentum relaxation time determined from transport measurements. Understanding of this phenomenon could lead to high temperature engineering of the electron spin memory. △ Less

Submitted 6 July, 2004; originally announced July 2004.