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Exponential speed-up of quantum annealing via n-local catalysts
Authors:
Roopayan Ghosh,
Luca A. Nutricati,
Natasha Feinstein,
P. A. Warburton,
Sougato Bose
Abstract:
The quantum speedup in solving optimization problems via adiabatic quantum annealing is often hindered by the closing of the energy gap during the anneal, especially when this gap scales exponentially with system size. In this work, we address this by demonstrating that for the Maximum Weighted Independent Set (MWIS) problem, an informed choice of $n-$local catalysts (operators involving $n$ qubit…
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The quantum speedup in solving optimization problems via adiabatic quantum annealing is often hindered by the closing of the energy gap during the anneal, especially when this gap scales exponentially with system size. In this work, we address this by demonstrating that for the Maximum Weighted Independent Set (MWIS) problem, an informed choice of $n-$local catalysts (operators involving $n$ qubits) can re-open the gap or prevent it from closing during the anneal process. By analyzing first-order phase transitions in toy instances of the MWIS problem, we identify effective forms of catalysts and also show that non-stoquasticity is not essential to avoid such phase transitions. While some of the toy problems studied might not be classically NP-hard, they reveal that $n-$local catalysts exponentially improve gap scaling and need to be connected across unfrustrated loops in the problem graph to be effective. Our analysis suggests that non-local quantum fluctuations entangling multiple qubits are key to achieving the desired quantum advantage.
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Submitted 19 September, 2024;
originally announced September 2024.
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Controllable tunnelling of single flux-quanta mediated by quantum phase-slip in disordered superconducting loops
Authors:
Jamie A. Potter,
Jonathan C. Fenton,
Paul A. Warburton
Abstract:
Quantum phase-slip (QPS) is the exact dual to the well-known Josephson effect. Although there are numerous proposals for applications of QPS devices, experimental work to develop these remains in the relatively early stages. Significant barriers to exploiting QPS nanowires for useful technologies still exist, such as establishing robust nanowire fabrication methods that allow coupling to low-loss…
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Quantum phase-slip (QPS) is the exact dual to the well-known Josephson effect. Although there are numerous proposals for applications of QPS devices, experimental work to develop these remains in the relatively early stages. Significant barriers to exploiting QPS nanowires for useful technologies still exist, such as establishing robust nanowire fabrication methods that allow coupling to low-loss circuits, and demonstrating control over the QPS process with an experimenter-controlled external bias. Here we report experiments which show that both of these barriers have been overcome. We present measurements at 300 mK of NbN coplanar waveguide (CPW) resonators embedded with nanowires fabricated using a neon focused ion-beam. The internal quality factor exceeds $2\times10^{4}$ -- significantly higher than previously reported in comparable experiments. The resonator frequency tunes periodically with an applied magnetic field, revealing tunnelling of the order parameter that always occurs at half-integer values of the applied flux. In contrast to previous studies of single QPS, the order-parameter tunnelling is shown to be adiabatic, demonstrating improved control over energy dissipation in nanowire QPS circuits. Our results highlight a promising pathway towards realising low-loss nanowire-based QPS devices.
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Submitted 11 January, 2023;
originally announced January 2023.
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Nonlinear quantum processes in superconducting resonators terminated by neon-focused-ion-beam-fabricated superconducting nanowires
Authors:
Jamie A. Potter,
Oscar W. Kennedy,
Jonathan C. Fenton,
Paul A. Warburton
Abstract:
We have used a neon focused-ion-beam to fabricate both nanoscale Nb Dayem bridges and NbN phase-slip nanowires located at the short-circuited end of quarter-wavelength coplanar waveguide resonators. The Dayem bridge devices show flux-tunability and intrinsic quality factor exceeding 10,000 at 300 mK up to local fields of at least 60 mT. The NbN nanowires show signatures of incoherent quantum tunne…
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We have used a neon focused-ion-beam to fabricate both nanoscale Nb Dayem bridges and NbN phase-slip nanowires located at the short-circuited end of quarter-wavelength coplanar waveguide resonators. The Dayem bridge devices show flux-tunability and intrinsic quality factor exceeding 10,000 at 300 mK up to local fields of at least 60 mT. The NbN nanowires show signatures of incoherent quantum tunnelling of flux at 300 mK.
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Submitted 4 November, 2020;
originally announced November 2020.
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Tunable Nb superconducting resonators based upon a Ne-FIB-fabricated constriction nanoSQUID
Authors:
Oscar W. Kennedy,
Jonathan Burnett,
Jonathan C. Fenton,
Nicolas G. N. Constantino,
Paul A. Warburton,
John J. L. Morton,
Eva Dupont-Ferrier
Abstract:
Hybrid superconducting--spin systems offer the potential to combine highly coherent atomic quantum systems with the scalability of superconducting circuits. To fully exploit this potential requires a high quality-factor microwave resonator, tunable in frequency and able to operate at magnetic fields optimal for the spin system. Such magnetic fields typically rule out conventional Al-based Josephso…
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Hybrid superconducting--spin systems offer the potential to combine highly coherent atomic quantum systems with the scalability of superconducting circuits. To fully exploit this potential requires a high quality-factor microwave resonator, tunable in frequency and able to operate at magnetic fields optimal for the spin system. Such magnetic fields typically rule out conventional Al-based Josephson junction devices that have previously been used for tunable high-$Q$ microwave resonators. The larger critical field of niobium (Nb) allows microwave resonators with large field resilience to be fabricated. Here, we demonstrate how constriction-type weak links, patterned in parallel into the central conductor of a Nb coplanar resonator using a neon focused ion beam (FIB), can be used to implement a frequency-tunable resonator. We study transmission through two such devices and show how they realise high quality factor, tunable, field resilient devices which hold promise for future applications coupling to spin systems.
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Submitted 7 January, 2019; v1 submitted 2 July, 2018;
originally announced July 2018.
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Emergence of Quantum Phase-Slip Behaviour in Superconducting NbN Nanowires: DC Electrical Transport and Fabrication Technologies
Authors:
N. G. N. Constantino,
M. S. Anwar,
O. W. Kennedy,
M. Dang,
P. A. Warburton,
J. C. Fenton
Abstract:
Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to understand the requirements for, and control the production of, superconducting nanowires that undergo coherent quantum phase-slips. We present three…
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Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to understand the requirements for, and control the production of, superconducting nanowires that undergo coherent quantum phase-slips. We present three fabrication technologies, based on using electron-beam lithography or neon focussed ion-beam lithography, for defining narrow superconducting nanowires, and have used these to create nanowires in niobium nitride with widths in the range of 20-250 nm. We present characterisation of the nanowires using DC electrical transport at temperatures down to 300 mK. We demonstrate that a range of different behaviours may be obtained in different nanowires, including bulk-like superconducting properties with critical-current features, the observation of phase-slip centres and the observation of zero conductance below a critical voltage, characteristic of coherent quantum phase-slips. We observe critical voltages up to 5 mV, an order of magnitude larger than other reports to date. The different prominence of quantum phase-slip effects in the various nanowires may be understood as arising from the differing importance of quantum fluctuations. Control of the nanowire properties will pave the way for routine fabrication of coherent quantum phase-slip nanowire devices for technology applications.
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Submitted 20 June, 2018;
originally announced June 2018.
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Low-Loss Superconducting Nanowire Circuits Using a Neon Focused Ion Beam
Authors:
Jonathan Burnett,
James Sagar,
Oscar W. Kennedy,
Paul A. Warburton,
Jonathan C. Fenton
Abstract:
We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths down to 20nm using a neon focused ion beam. In the low-power limit, we demonstrate an internal quality factor up to 3.9x10^5 at 300mK [implying a two-level-system…
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We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths down to 20nm using a neon focused ion beam. In the low-power limit, we demonstrate an internal quality factor up to 3.9x10^5 at 300mK [implying a two-level-system-limited quality factor up to 2x10^5 at 10 mK], not only significantly higher than in similar devices but also matching the state of the art of conventional Josephson-junction-embedded resonators. We also show a high sensitivity of the nanowire to stray infrared photons, which is controllable by suitable precautions to minimize stray photons in the sample environment. Our results suggest that there are excellent prospects for superconducting-nanowire-based quantum circuits.
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Submitted 8 August, 2017;
originally announced August 2017.
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Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
Authors:
R. P. Beardsley,
D. E. Parkes,
J. Zemen,
S. Bowe,
K. W. Edmonds,
C. Reardon,
F. Maccherozzi,
I. Isakov,
P. A. Warburton,
R. P. Campion,
B. L. Gallagher,
S. A. Cavill,
A. W. Rushforth
Abstract:
We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We…
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We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials.
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Submitted 10 February, 2017; v1 submitted 9 September, 2016;
originally announced September 2016.
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Compact chromium oxide thin film resistors for use in nanoscale quantum circuits
Authors:
C. R. Nash,
J. C. Fenton,
N. G. N. Constantino,
P. A. Warburton
Abstract:
We report on the electrical characterisation of a series of thin chromium oxide films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the chromium oxide films was varied from 28$Ω/ \square$ to 32.6k$Ω/ \square$. The variation in resistance with cooling to 4.2K…
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We report on the electrical characterisation of a series of thin chromium oxide films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the chromium oxide films was varied from 28$Ω/ \square$ to 32.6k$Ω/ \square$. The variation in resistance with cooling to 4.2K in liquid helium was investigated; the sheet resistance at 4.2K varied with composition from 65$Ω/ \square$ to above 20G$Ω/ \square$. All of the films measured displayed ohmic behaviour at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium-silicon nanowires, interfaces between niobium-silicon and chromium oxide are required. By characterising the interface contact resistance, we found that a gold intermediate layer is favourable: the specfic contact resistivity of chromium-oxide-to-gold interfaces was 0.15 m$Ω$cm$^2$, much lower than the value for direct chromium-oxide to niobium-silicon interfaces, 65m$Ω$cm$^2$. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.
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Submitted 31 July, 2014;
originally announced July 2014.
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Current-Mode Deep Level Transient Spectroscopy of a Semiconductor Nanowire Field-Effect Transistor
Authors:
Ivan Isakov,
Marion J L Sourribes,
Paul A Warburton
Abstract:
One of the main limiting factors in the carrier mobility in semiconductor nanowires is the presence of deep trap levels. While deep-level transient spectroscopy (DLTS) has proved to be a powerful tool in analysing traps in bulk semiconductors, this technique is ineffective for the characterisation of nanowires due to their very small capacitance. Here we introduce a new technique for measuring the…
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One of the main limiting factors in the carrier mobility in semiconductor nanowires is the presence of deep trap levels. While deep-level transient spectroscopy (DLTS) has proved to be a powerful tool in analysing traps in bulk semiconductors, this technique is ineffective for the characterisation of nanowires due to their very small capacitance. Here we introduce a new technique for measuring the spectrum of deep traps in nanowires. In current-mode DLTS (I-DLTS) the temperature-dependence of the transient current through a nanowire field-effect transistor in response to an applied gate voltage pulse is measured. We demonstrate the applicability of I-DLTS to determine the activation energy and capture cross-sections of several deep defect states in zinc oxide nanowires. In addition to characterising deep defect states, we show that I-DLTS can be used to measure the surface barrier height in semiconductor nanowires.
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Submitted 22 January, 2016; v1 submitted 29 May, 2014;
originally announced May 2014.
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Quantum and Classical in Adiabatic Computation
Authors:
P. J. D. Crowley,
T. Duric,
W. Vinci,
P. A. Warburton,
A. G. Green
Abstract:
Adiabatic transport provides a powerful way to manipulate quantum states. By preparing a system in a readily initialised state and then slowly changing its Hamiltonian, one may achieve quantum states that would otherwise be inaccessible. Moreover, a judicious choice of final Hamiltonian whose groundstate encodes the solution to a problem allows adiabatic transport to be used for universal quantum…
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Adiabatic transport provides a powerful way to manipulate quantum states. By preparing a system in a readily initialised state and then slowly changing its Hamiltonian, one may achieve quantum states that would otherwise be inaccessible. Moreover, a judicious choice of final Hamiltonian whose groundstate encodes the solution to a problem allows adiabatic transport to be used for universal quantum computation. However, the dephasing effects of the environment limit the quantum correlations that an open system can support and degrade the power of such adiabatic computation. We quantify this effect by allowing the system to evolve over a restricted set of quantum states, providing a link between physically inspired classical optimisation algorithms and quantum adiabatic optimisation. This new perspective allows us to develop benchmarks to bound the quantum correlations harnessed by an adiabatic computation. We apply these to the D-Wave Vesuvius machine with revealing - though inconclusive - results.
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Submitted 20 May, 2014;
originally announced May 2014.
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Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
Authors:
Marion J. L. Sourribes,
Ivan Isakov,
Marina Panfilova,
Huiyun Liu,
Paul A. Warburton
Abstract:
We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three t…
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We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs$_{0.85}$Sb$_{0.15}$ nanowires than InAs nanowires.
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Submitted 14 February, 2014;
originally announced February 2014.
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NbSi nanowire quantum-phase-slip circuits: dc supercurrent blockade, microwave measurements and thermal analysis
Authors:
C. H. Webster,
J. C. Fenton,
T. T. Hongisto,
S. P. Giblin,
A. B. Zorin,
P. A. Warburton
Abstract:
We present a detailed report of microwave irradiation of ultra-narrow superconducting nanowires. In our nanofabricated circuits containing a superconducting NbSi nanowire, a dc blockade of current flow was observed at low temperatures below a critical voltage Vc, a strong indicator of the existence of quantum phase-slip (QPS) in the nanowire. We describe the results of applying microwaves to these…
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We present a detailed report of microwave irradiation of ultra-narrow superconducting nanowires. In our nanofabricated circuits containing a superconducting NbSi nanowire, a dc blockade of current flow was observed at low temperatures below a critical voltage Vc, a strong indicator of the existence of quantum phase-slip (QPS) in the nanowire. We describe the results of applying microwaves to these samples, using a range of frequencies and both continuous-wave and pulsed drive, in order to search for dual Shapiro steps which would constitute an unambiguous demonstration of quantum phase-slip. We observed no steps, and our subsequent thermal analysis suggests that the electron temperature in the series CrO resistors was significantly elevated above the substrate temperature, resulting in sufficient Johnson noise to wash out the steps. To understand the system and inform future work, we have constructed a numerical model of the dynamics of the circuit for dc and ac bias (both continuous wave and pulsed drive signals) in the presence of Johnson noise. Using this model, we outline important design considerations for device and measurement parameters which should be used in any future experiment to enable the observation of dual Shapiro steps at experimentally accessible temperatures and thus lead to the development of a QPS-based quantum current standard.
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Submitted 29 April, 2013; v1 submitted 12 February, 2013;
originally announced February 2013.
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Fano resonance resulting from a tunable interaction between molecular vibrational modes and a double-continuum of a plasmonic metamolecule
Authors:
E. J. Osley,
C. G. Biris,
P. G. Thompson,
R. R. F. Jahromi,
P. A. Warburton,
N. C. Panoiu
Abstract:
Coupling between tuneable broadband modes of an array of plasmonic metamolecules and a vibrational mode of carbonyl bond of poly(methyl methacrylate) is shown experimentally to produce a Fano resonance, which can be tuned in situ by varying the polarization of incident light. The interaction between the plasmon modes and the molecular resonance is investigated using both rigorous electromagnetic c…
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Coupling between tuneable broadband modes of an array of plasmonic metamolecules and a vibrational mode of carbonyl bond of poly(methyl methacrylate) is shown experimentally to produce a Fano resonance, which can be tuned in situ by varying the polarization of incident light. The interaction between the plasmon modes and the molecular resonance is investigated using both rigorous electromagnetic calculations and a quantum mechanical model describing the quantum interference between a discrete state and two continua. The predictions of the quantum mechanical model are in good agreement with the experimental data and provide an intuitive interpretation, at the quantum level, of the plasmon-molecule coupling.
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Submitted 12 September, 2012;
originally announced September 2012.
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Thermal fluctuations in moderately damped Josephson junctions: Multiple escape and retrapping, switching- and return-current distributions and hysteresis
Authors:
J. C. Fenton,
P. A. Warburton
Abstract:
A crossover at a temperature T* in the temperature dependence of the width s of the distribution of switching currents of moderately damped Josephson junctions has been reported in a number of recent publications, with positive ds/dT and IV characteristics associated with underdamped behaviour for lower temperatures T<T*, and negative ds/dT and IV characteristics resembling overdamped behaviour…
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A crossover at a temperature T* in the temperature dependence of the width s of the distribution of switching currents of moderately damped Josephson junctions has been reported in a number of recent publications, with positive ds/dT and IV characteristics associated with underdamped behaviour for lower temperatures T<T*, and negative ds/dT and IV characteristics resembling overdamped behaviour for higher temperatures T>T*. We have investigated in detail the behaviour of Josephson junctions around the temperature T* by using Monte Carlo simulations including retrapping from the running state into the supercurrent state as given by the model of Ben-Jacob et al. We develop discussion of the important role of multiple escape and retrapping events in the moderate-damping regime, in particular considering the behaviour in the region close to T*. We show that the behaviour is more fully understood by considering two crossover temperatures, and that the shape of the distribution and s(T) around T*, as well as at lower T<T*, are largely determined by the shape of the conventional thermally activated switching distribution. We show that the characteristic temperatures T* are not unique for a particular Josephson junction, but have some dependence on the ramp rate of the applied bias current. We also consider hysteresis in moderately damped Josephson junctions and discuss the less commonly measured distribution of return currents for a decreasing current ramp. We find that some hysteresis should be expected to persist above T* and we highlight the importance, even well below T*, of accounting properly for thermal fluctuations when determining the damping parameter Q.
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Submitted 28 July, 2008;
originally announced July 2008.
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Decoupling of a Current-Biased Intrinsic Josephson Junction from its Environment
Authors:
P. A. Warburton,
A. R. Kuzhakhmetov,
G. Burnell,
M. G. Blamire,
H. Schneidewind
Abstract:
We have observed a dissipative phase diffusion branch in arrays of hysteretic high-Tc intrinsic Josephson junctions. By comparing the data with a thermal activation model we extract the impedance seen by the junction in which phase diffusion is occurring. At the plasma frequency this junction is isolated from its environment and it sees its own large (~ kilo Ohm) impedance. Our results suggest t…
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We have observed a dissipative phase diffusion branch in arrays of hysteretic high-Tc intrinsic Josephson junctions. By comparing the data with a thermal activation model we extract the impedance seen by the junction in which phase diffusion is occurring. At the plasma frequency this junction is isolated from its environment and it sees its own large (~ kilo Ohm) impedance. Our results suggest that stacks of Josephson junctions may be used for isolation purposes in the development of a solid state quantum computer.
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Submitted 20 March, 2003;
originally announced March 2003.