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Versatile multi-q antiferromagnetic charge order in correlated vdW metals
Authors:
Y. Fujisawa,
P. Wu,
R. Okuma,
B. R. M. Smith,
D. Ueta,
R. Kobayashi,
N. Maekawa,
T. Nakamura,
C-H. Hsu,
Chandan De,
N. Tomoda,
T. Higashihara,
K. Morishita,
T. Kato,
Z. Y. Wang,
Y. Okada
Abstract:
Following the discovery of graphene, interest in van der Waals (vdW) materials has surged; yet, advancing "beyond graphene" physics requires the development of quantum material platforms that host versatile many-body states. Using scanning tunneling microscopy and spectroscopy at 300 mK, we uncover two competing states in vdW metal CeTe3: charge-ordered in-plane antiferromagnetic phases forming st…
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Following the discovery of graphene, interest in van der Waals (vdW) materials has surged; yet, advancing "beyond graphene" physics requires the development of quantum material platforms that host versatile many-body states. Using scanning tunneling microscopy and spectroscopy at 300 mK, we uncover two competing states in vdW metal CeTe3: charge-ordered in-plane antiferromagnetic phases forming stripe and checkerboard patterns. Remarkably, the competition between them is tuned through a modest in-plane magnetic field (approximately 1.5 T), revealing significant cooperative phenomena between frustrated antiferromagnetism, charge order, and competing Fermi surface nesting. Underlying strongly intertwined many-body states are consistently signaled by density of states deformations exceeding plus/minus 30 meV scale across the Fermi level. Our findings provide a promising correlated vdW platform hosting versatile two-dimensional many-body physics, offering a fertile ground to explore topologically nontrivial multi-q charge-ordered antiferromagnetism, quantum criticality, unconventional superconductivity, and their potential interconnections.
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Submitted 1 July, 2025;
originally announced July 2025.
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Orbital ordering and fluctuations in a kagome superconductor CsV3Sb5
Authors:
D. W. Song,
L. X. Zheng,
F. H. Yu,
J. Li,
L. P. Nie,
M. Shan,
D. Zhao,
S. J. Li,
B. L. Kang,
Z. M. Wu,
Y. B. Zhou,
K. L. Sun,
K. Liu,
X. G. Luo,
Z. Y. Wang,
J. J. Ying,
X. G. Wan,
T. Wu,
X. H. Chen
Abstract:
Recently, competing electronic instabilities, including superconductivity and density-wave-like order, have been discovered in vanadium-based kagome metals AV3Sb5 (A = K, Rb, Cs) with a nontrivial band topology. This finding stimulates wide interests to study the interplay of these competing electronic orders and possible exotic excitations in the superconducting state. Here, in order to further c…
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Recently, competing electronic instabilities, including superconductivity and density-wave-like order, have been discovered in vanadium-based kagome metals AV3Sb5 (A = K, Rb, Cs) with a nontrivial band topology. This finding stimulates wide interests to study the interplay of these competing electronic orders and possible exotic excitations in the superconducting state. Here, in order to further clarify the nature of density-wave-like transition in these kagome superconductors, we performed 51V and 133Cs nuclear magnetic resonance (NMR) measurements on the CsV3Sb5 single crystal. A first-order phase transition associated with orbital ordering is revealed by observing a sudden splitting of orbital shift in 51V NMR spectrum at the structural transition temperature Ts ~ 94 K. In contrast, the quadrupole splitting from a charge-density-wave (CDW) order on 51V NMR spectrum only appears gradually below Ts with a typical second-order transition behavior, suggesting that the CDW order is a secondary electronic order. Moreover, combined with 133Cs NMR spectrum, the present result also confirms a three-dimensional structural modulation with a 2ax2ax2c period. Above Ts, the temperature-dependent Knight shift and nuclear spin-lattice relaxation rate (1/T1) further indicate the existence of remarkable magnetic fluctuations from vanadium 3d orbitals, which are suppressed due to orbital ordering below Ts. The present results strongly support that, besides CDW order, the previously claimed density-wave-like transition also involves a dominant orbital order, suggesting a rich orbital physics in these kagome superconductors.
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Submitted 19 April, 2021;
originally announced April 2021.
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Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$
Authors:
Z. L. Sun,
A. F. Wang,
H. M. Mu,
H. H. Wang,
Z. F. Wang,
T. Wu,
Z. Y. Wang,
X. Y. Zhou,
X. H. Chen
Abstract:
How to realize applicably appreciated functionalities based on the coupling between charge and spin degrees of freedom is still a challenge in the field of spintronics. For example, anisotropic magnetoresistance (AMR) effect is utilized to read out the information stored by various magnetic structures, which usually originates from atomic spin-orbit coupling (SOC). However, the application of AMR…
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How to realize applicably appreciated functionalities based on the coupling between charge and spin degrees of freedom is still a challenge in the field of spintronics. For example, anisotropic magnetoresistance (AMR) effect is utilized to read out the information stored by various magnetic structures, which usually originates from atomic spin-orbit coupling (SOC). However, the application of AMR in antiferromagnet-based spintronics is still hindered by rather small AMR value. Here, we discover a colossal AMR effect during the field-induced metal-to-insulator transition (MIT) in a nearly Dirac material EuMnSb$_2$ with an antiferromagnetic order of Eu$^{2+}$ moments. The colossal AMR reaches to an unprecedented value of 1.84$\times$10$^6$% at 2 K, which is four orders of magnitude larger than previously reported values in antiferromagnets. Based on density functional theory calculations, a Dirac-like band structure, which is strongly dependent on SOC, is confirmed around Y point and dominates the overall transport properties in the present sample with predominant electron-type carriers. Moreover, it is also revealed that the indirect band gap around Fermi level is dependent on the magnetic structure of Eu$^{2+}$ moments, which leads to the field-induced MIT and plays a key role on the colossal AMR effect. Finally, our present work suggests that the similar antiferromagnetic topological materials as EuMnSb$_2$, in which Dirac-like fermions is strongly modulated by SOC and antiferromagnetism, would be a fertile ground to explore applicably appreciated AMR effect.
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Submitted 19 April, 2021;
originally announced April 2021.
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Concurrence of anomalous Hall effect and charge density wave in a superconducting topological kagome metal
Authors:
F. H. Yu,
T. Wu,
Z. Y. Wang,
B. Lei,
W. Z. Zhuo,
J. J. Ying,
X. H. Chen
Abstract:
As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome superconductor CsV3Sb5 with transition temperature (Tc) of 2.7 K. The anomalous Hall conductivity reaches up to 2.1*10^4 Ω-1 cm-1 which is larger than those observed in mo…
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As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome superconductor CsV3Sb5 with transition temperature (Tc) of 2.7 K. The anomalous Hall conductivity reaches up to 2.1*10^4 Ω-1 cm-1 which is larger than those observed in most of the ferromagnetic metals. Strikingly, the emergence of AHE exactly follows the higher-temperature charge-density-wave (CDW) transition with TCDW ~ 94 K, indicating a strong correlation between the CDW state and AHE. Furthermore, AHE disappears when the CDW transition is completely suppressed at high pressure. The origin for AHE is attributed to enhanced skew scattering in CDW state and large Berry curvature arose from the kagome lattice. These discoveries make CsV3Sb5 as an ideal platform to study the interplay among nontrivial band topology, CDW and unconventional superconductivity.
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Submitted 8 July, 2021; v1 submitted 22 February, 2021;
originally announced February 2021.
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Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures
Authors:
Yong Hu,
Lixuan Xu,
Mengzhu Shi,
Aiyun Luo,
Shuting Peng,
Z. Y. Wang,
J. J. Ying,
T. Wu,
Z. K. Liu,
C. F. Zhang,
Y. L. Chen,
G. Xu,
X. -H. Chen,
J. -F. He
Abstract:
In the newly discovered magnetic topological insulator MnBi$_2$Te$_4$, both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure. The related (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states. Here, we report angle-resolved p…
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In the newly discovered magnetic topological insulator MnBi$_2$Te$_4$, both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure. The related (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states. Here, we report angle-resolved photoemission spectroscopy (ARPES) studies on a series of the heterostructures (MnBi$_2$Te$_4$, MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$). A universal gapless Dirac cone is observed at the MnBi$_2$Te$_4$ terminated (0001) surfaces in all systems. This is in sharp contrast to the expected gap from the original antiferromagnetic ground state, indicating an altered magnetic structure near the surface, possibly due to the surface termination. In the meantime, the electron band dispersion of the surface states, presumably dominated by the top surface, is found to be sensitive to different stackings of the underlying MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ layers. Our results suggest the high tunability of both magnetic and electronic structures of the topological surface states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures, which is essential in realizing various novel topological states.
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Submitted 24 October, 2019;
originally announced October 2019.
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Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties
Authors:
Z. Y. Wang,
X. Guo,
H. D. Li,
T. L. Wong,
N. Wang,
M. H. Xie
Abstract:
Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL struct…
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Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs.
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Submitted 3 June, 2011;
originally announced June 2011.
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Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator
Authors:
H. D. Li,
Z. Y. Wang,
X. Kan,
X. Guo,
H. T. He,
Z. Wang,
J. N. Wang,
T. L. Wong,
N. Wang,
M. H. Xie
Abstract:
Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van der Waal epitaxy of Bi2Se3 to proceed. By employing vicinal Si(111) substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored to achieve singl…
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Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van der Waal epitaxy of Bi2Se3 to proceed. By employing vicinal Si(111) substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored to achieve single crystalline Bi2Se3 epifilms, in which threading defects and twins are effectively suppressed. Optimization of the growth parameters has resulted in vicinal Bi2Se3 films showing a carrier mobility of ~ 2000 cm2V-1s-1 and the background doping of ~ 3 x 1018 cm-3 of the as-grown layers. Such samples not only show relatively high magnetoresistance but also a linear dependence on magnetic field.
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Submitted 11 May, 2010; v1 submitted 4 May, 2010;
originally announced May 2010.
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Creating diamond color centers for quantum optical applications
Authors:
F. C. Waldermann,
P. Olivero,
J. Nunn,
K. Surmacz,
Z. Y. Wang,
D. Jaksch,
R. A. Taylor,
I. A. Walmsley,
M. Draganski,
P. Reichart,
A. D. Greentree,
D. N. Jamieson,
S. Prawer
Abstract:
Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized,…
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Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{\circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.
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Submitted 29 October, 2007;
originally announced October 2007.
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General Electrical Manipulations of Electron Spin
Authors:
Z. Y. Wang,
C. D. Xiong
Abstract:
Traditionally, the interactions related to the 3D spatial angular momentum have been studied completely, while the ones related to the generators of Lorentz boost are always ignored. In this paper we show that the generators of Lorentz boost have a nontrivial physical significance in quantum mechanics, and try to propose a most general theory about electrical manipulations of electron spin, wher…
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Traditionally, the interactions related to the 3D spatial angular momentum have been studied completely, while the ones related to the generators of Lorentz boost are always ignored. In this paper we show that the generators of Lorentz boost have a nontrivial physical significance in quantum mechanics, and try to propose a most general theory about electrical manipulations of electron spin, where a new treatment and interpretation for the traditional Darwin term and spin-orbit coupling is given via the concept of electron's induced electric moment. Some electrostatic fields can even affect the spin quantum states of a resting electron, and parallel electric and magnetic fields can be simultaneously applied to fix on the spin orientation of electron.
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Submitted 2 April, 2005;
originally announced April 2005.
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A Theoretical Investigation of Relativistic Spintronics
Authors:
Z. Y. Wang,
C. D. Xiong,
B. Chen
Abstract:
Spintronics directly based on relativistic quantum mechanics is called as relativistic spintronics, which involves the study of active control and manipulation of 4D spin-tensor degrees of freedom via the electromagnetic field tensor. For future potential electronic devices with smaller size, the study of relativistic spintronics would be valuable. In this paper, we try to establish a general th…
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Spintronics directly based on relativistic quantum mechanics is called as relativistic spintronics, which involves the study of active control and manipulation of 4D spin-tensor degrees of freedom via the electromagnetic field tensor. For future potential electronic devices with smaller size, the study of relativistic spintronics would be valuable. In this paper, we try to establish a general theoretical basis for relativistic spintronics, from which we have: 1) in relativistic spintronics, there have more plentiful contents for relativistic effects, e.g. the usual 3D spatial spin-orbit coupling is extended to the 4D spin-orbit-tensor coupling; 2) via the spin and like-spin degrees of freedom we can simultaneously make use of electric and magnetic field strengths to orientate an electron; 3) not only the spin quantum states of a moving electron but also those of a motionless electron can be affected by some particular electrostatic fields.
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Submitted 27 November, 2004;
originally announced November 2004.
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Superluminal Behaviors of Electromagnetic Near-fields
Authors:
Z. Y. Wang,
C. D. Xiong
Abstract:
Superluminal phenomena have been reported in many experiments of electromagnetic wave propagation, where the superluminal behaviors of evanescent waves are the most interesting ones with the important physical significances. Consider that evanescent waves are related to the near-zone fields of electromagnetic sources, based on the first principles, we study the group velocities of electromagneti…
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Superluminal phenomena have been reported in many experiments of electromagnetic wave propagation, where the superluminal behaviors of evanescent waves are the most interesting ones with the important physical significances. Consider that evanescent waves are related to the near-zone fields of electromagnetic sources, based on the first principles, we study the group velocities of electromagnetic fields in near-field region, and show that they can be superluminal, which can provide a heuristic interpretation for the superluminal properties of evanescent waves.
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Submitted 16 May, 2006; v1 submitted 14 November, 2003;
originally announced November 2003.
