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Giant segregation transition as origin of liquid metal embrittlement in the Fe-Zn system
Authors:
Reza Darvishi Kamachali,
Theophilus Wallis,
Yuki Ikeda,
Ujjal Saikia,
Ali Ahmadian,
Christian H. Liebscher,
Tilmann Hickel,
Robert Maaß
Abstract:
A giant Zn segregation transition is revealed using CALPHAD-integrated density-based modelling of segregation into Fe grain boundaries (GBs). The results show that above a threshold of only a few atomic percent Zn in the alloy, a substantial amount of up to 60 at.\% Zn can segregate to the GB. We found that the amount of segregation abruptly increases with decreasing temperature, while the Zn cont…
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A giant Zn segregation transition is revealed using CALPHAD-integrated density-based modelling of segregation into Fe grain boundaries (GBs). The results show that above a threshold of only a few atomic percent Zn in the alloy, a substantial amount of up to 60 at.\% Zn can segregate to the GB. We found that the amount of segregation abruptly increases with decreasing temperature, while the Zn content in the alloy required for triggering the segregation transition decreases. Direct evidence of the Zn segregation transition is obtained using high-resolution scanning transmission electron microscopy. Base on the model, we trace the origin of the segregation transition back to the low cohesive energy of Zn and a miscibility gap in Fe-Zn GB, arising from the magnetic ordering effect, which is confirmed by ab-initio calculations. We also show that the massive Zn segregation resulting from the segregation transition greatly assists with liquid wetting and reduces the work of separation along the GB. The current predictions suggest that control over Zn segregation, by both alloy design and optimizing the galvanization and welding processes, may offer preventive strategies against liquid metal embrittlement.
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Submitted 31 August, 2023; v1 submitted 26 April, 2023;
originally announced April 2023.
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Dynamic stability of nano-scale ferroelectric domains by molecular dynamics modeling
Authors:
Arne J. Klomp,
Ruben Khachaturyan,
Theophilus Wallis,
Anna Grünebohm,
Karsten Albe
Abstract:
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. In this study we combine atomistic and coarse-grained molecular dynamic simulations to study the domain wall stability in the prototypical ferroelectric BaTiO3. We transfer the discussion of the field-driven nucleation and motion of domain walls to thermally induce…
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Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. In this study we combine atomistic and coarse-grained molecular dynamic simulations to study the domain wall stability in the prototypical ferroelectric BaTiO3. We transfer the discussion of the field-driven nucleation and motion of domain walls to thermally induced modifications of the wall without an external driving force. Our simulations show that domain wall dynamics and stability depend crucially on microscopic thermal fluctuations. Enhanced fluctuations at domain walls may result in the formation of critical nuclei for the permanent shift of the domain wall. If two domain walls are close - put in other words, when domains are small - thermal fluctuations can be sufficient to bring domain walls into contact and lead to the annihilation of small domains. This is even true well below the Curie temperature and when domain walls are initially as far apart as 6 unit cells. Such small domains are, thus, not stable and limit the maximum achievable domain wall density in nanoelectronic devices.
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Submitted 24 June, 2022;
originally announced June 2022.
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Spatially Resolved Persistent Photoconductivity in MoS$_2$-WS$_2$ Lateral Heterostructures
Authors:
Samuel Berweger,
Hanyu Zhang,
Prasana K. Sahoo,
Benjamin M. Kupp,
Jeffrey L. Blackburn,
Elisa M. Miller,
T. Mitch Wallis,
Dmitri V. Voronine,
Pavel Kabos,
Sanjini U. Nanayakkara
Abstract:
The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial variations in photoconductivity in MoS$_2$--WS$_2$ lateral multijunction heterostructures using photon energy-resolved narrowband illumination. We find t…
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The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial variations in photoconductivity in MoS$_2$--WS$_2$ lateral multijunction heterostructures using photon energy-resolved narrowband illumination. We find that the onset of photoconductivity in individual domains corresponds to the optical absorption onset, confirming that the tightly bound excitons in transition metal dichalcogenides can nonetheless dissociate into free carriers. These photogenerated carriers are most likely n-type and are seen to persist for up to days, and informed by finite element modeling we reveal that they can increase the carrier density by up to 200 times. This persistent photoconductivity appears to be dominated by contributions from the multilayer MoS$_2$ domains, and we attribute the flake-wide response in part to charge transfer across the heterointerface. Spatial correlation of our SMM imaging with photoluminescence (PL) mapping confirms the strong link between PL peak emission photon energy, PL intensity, and the local accumulated charge. This work reveals the spatially and temporally complex optoelectronic response of these systems and cautions that properties measured during or after illumination may not reflect the true dark state of these materials but rather a metastable charged state.
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Submitted 10 August, 2020;
originally announced August 2020.
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Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
Authors:
Samuel Berweger,
Gang Qiu,
Yixiu Wang,
Benjamin Pollard,
Kristen L. Genter,
Robert Tyrell-Ead,
T. Mitch Wallis,
Wenzhuo Wu,
Peide D. Ye,
Pavel Kabos
Abstract:
Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resolution. Here we demonstrate the general capability of near-field scanning microwave microscopy (SMM) to…
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Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resolution. Here we demonstrate the general capability of near-field scanning microwave microscopy (SMM) to image and study the local carrier type and associated conductivity in operando by studying ambiploar field effect transistors (FETs) of the 1D vdW material tellurium in 2D form. To quantitatively understand electronic variations across the device, we produce nanometer resolved maps of the local carrier equivalence backgate voltage. We show that the global device conductivity minimum determined from transport measurements does not arise from uniform carrier neutrality, but rather from the continued coexistence of p-type regions at the device edge and n-type regions in the interior of our micron-scale devices. This work both underscores and addresses the need to image and understand spatial variations in the electronic properties of nanoscale devices.
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Submitted 3 November, 2018;
originally announced November 2018.
