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Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Authors:
Aymen Mahmoudi,
Meryem Bouaziz,
Niels Chapuis,
Geoffroy Kremer,
Julien Chaste,
Davide Romanin,
Marco Pala,
François Bertran,
Patrick Le Fèvre,
Iann C. Gerber,
Gilles Patriarche,
Fabrice Oehler,
Xavier Wallart,
Abdelkarim Ouerghi
Abstract:
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here…
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The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the gamma point of the Brillouin zone. The epitaxial growth of WSe2 on GaP(111)B heterostructures paves the way for further studies of the fundamental properties of these complex materials, as well as prospects for their implementation in devices to exploit their promising electronic and optical properties.
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Submitted 9 October, 2023;
originally announced October 2023.
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Thermal and electrical cross-plane conductivity at the nanoscale in poly(3,4-ethylenedioxythiophene):trifuoromethanesulfonate thin films
Authors:
K. Kondratenko,
D. Guerin,
X. Wallart,
S. Lenfant,
D. Vuillaume
Abstract:
Cross-plane electrical and thermal transport in thin films of a conducting polymer (poly(3,4-ethylenedioxythiophene), PEDOT) stabilized with trifluoromethanesulfonate (OTf) is investigated in this study. We explore their electrical properties by conductive atomic force microscopy (C-AFM), which reveals the presence of highly conductive nano-domains. Thermal conductivity in cross-plane direction is…
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Cross-plane electrical and thermal transport in thin films of a conducting polymer (poly(3,4-ethylenedioxythiophene), PEDOT) stabilized with trifluoromethanesulfonate (OTf) is investigated in this study. We explore their electrical properties by conductive atomic force microscopy (C-AFM), which reveals the presence of highly conductive nano-domains. Thermal conductivity in cross-plane direction is measured with Null-Point scanning thermal microscopy (NP-SThM): PEDOT:OTf indeed demonstrates non-negligible electronic contribution to the thermal transport. We further investigate the correlation between electrical and thermal conductivity by applying posttreatment: chemical reduction (de-doping) for the purpose of lowering charge carrier concentration and hence, electrical conductivity and acid treatment (over-doping) to increase the latter. From our measurements, we find a vibrational thermal conductivity of 0.34 (+/- 0.04) Wm-1 K-1. From the linear dependence or the electronic contribution of thermal conductivity vs. the electronic conductivity (Widemann-Franz law), we infer a Lorenz number 6 times larger than the classical Sommerfeld value as also observed in many organic materials for in-plane thermal transport. Applying the recently proposed molecular Widemann-Franz law, we deduced a reorganization energy of 0.53 (+/- 0.06) eV.
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Submitted 24 March, 2022;
originally announced March 2022.
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Revisiting Coulomb diamond signatures in quantum Hall interferometers
Authors:
N. Moreau,
S. Faniel,
F. Martins,
L. Desplanque,
X. Wallart,
S. Melinte,
V. Bayot,
B. Hackens
Abstract:
Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond features in the scanning gate spectroscopy of a quantum point contact carved out of a semiconductor heterostructure, in the quantum Hall regime. Varying the scanning…
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Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond features in the scanning gate spectroscopy of a quantum point contact carved out of a semiconductor heterostructure, in the quantum Hall regime. Varying the scanning gate parameters and the magnetic field, the diamonds are found to smoothly evolve to checkerboard patterns. To explain this surprising behavior, we put forward a model which relies on the presence of a nanometer-sized Fabry-Pérot quantum Hall interferometer at the center of the constriction with tunable tunneling paths coupling the central part of the interferometer to the quantum Hall channels running along the device edges. Both types of signatures, diamonds and checkerboards, and the observed transition, are reproduced by simply varying the interferometer size and the transmission probabilities at the tunneling paths. The new proposed interpretation of diamond phenomenology will likely lead to revisit previous data, and opens the way towards engineering more complex interferometric devices with nanoscale dimensions.
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Submitted 15 October, 2021;
originally announced October 2021.
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Conductance Switching of Azobenzene-Based Self-Assembled Monolayers on Cobalt Probed by UHV Conductive-AFM
Authors:
Louis Thomas,
Imane Arbouch,
David Guérin,
Xavier Wallart,
Colin van Dyck,
Thierry Mélin,
Jérôme Cornil,
Dominique Vuillaume,
Stéphane Lenfant
Abstract:
We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions formed with the tip of a conductive atomic force microscope under ultra-high vacuum. The statistical analysis of the current-voltage curves shows two distinct states of the molecu…
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We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions formed with the tip of a conductive atomic force microscope under ultra-high vacuum. The statistical analysis of the current-voltage curves shows two distinct states of the molecule conductance, suggesting the coexistence of both the trans and cis azobenzene isomers on the surface. The cis isomer population (trans isomer) increases (decreases) upon UV light irradiation. The situation is reversed under blue light irradiation. The experiments are confronted to first-principle calculations performed on the molecular junctions with the Non-Equilibrium Green's Function formalism combined with Density Functional Theory (NEGF/DFT). The theoretical results consider two different molecular orientations for each isomer. Whereas the orientation does not affect the conductance of the trans isomer, it significantly modulates the conductance of the cis isomer and the resulting conductance ON/OFF ratio of the molecular junction. This helps identifying the molecular orientation at the origin of the observed current differences between the trans and cis forms. The ON state is associated to the trans isomer irrespective of its orientation in the junction, while the OFF state is identified as a cis isomer with its azobenzene moiety folded upward with respect to the bithiophene core. The experimental and calculated ON/OFF conductance ratios have a similar order of magnitude. This conductance ratio seems reasonable to make these Co-AzBT molecular junctions a good test-bed to further explore the relationship between the spin-polarized charge transport, the molecule conformation and the molecule-Co spinterface.
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Submitted 31 March, 2021;
originally announced March 2021.
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2D Rutherford-Like Scattering in Ballistic Nanodevices
Authors:
S. Toussaint,
B. Brun-Barrière,
S. Faniel,
L. Desplanque,
X. Wallart,
V. Bayot,
B. Hackens
Abstract:
Ballistic injection in a nanodevice is a complex process where electrons can either be transmitted or reflected, thereby introducing deviations from the otherwise quantized conductance. In this context, quantum rings (QRs) appear as model geometries: in a semiclassical view, most electrons bounce against the central QR antidot, which strongly reduces injection efficiency. Thanks to an analogy with…
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Ballistic injection in a nanodevice is a complex process where electrons can either be transmitted or reflected, thereby introducing deviations from the otherwise quantized conductance. In this context, quantum rings (QRs) appear as model geometries: in a semiclassical view, most electrons bounce against the central QR antidot, which strongly reduces injection efficiency. Thanks to an analogy with Rutherford scattering, we show that a local partial depletion of the QR close to the edge of the antidot can counter-intuitively ease ballistic electron injection. On the contrary, local charge accumulation can focus the semi-classical trajectories on the hard-wall potential and strongly enhance reflection back to the lead. Scanning gate experiments on a ballistic QR, and simulations of the conductance of the same device are consistent, and agree to show that the effect is directly proportional to the ratio between the strength of the perturbation and the Fermi energy. Our observation surprisingly fits the simple Rutherford formalism in two-dimensions in the classical limit.
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Submitted 6 April, 2018;
originally announced April 2018.
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Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
Authors:
P. Liu,
F. Martins,
B. Hackens,
L. Desplanque,
X. Wallart,
M. G. Pala,
S. Huant,
V. Bayot,
H. Sellier
Abstract:
The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites of the wires produces conductance oscillations that are periodic in the tip voltage. These oscillations take the shape of concentric circles whose number and di…
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The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites of the wires produces conductance oscillations that are periodic in the tip voltage. These oscillations take the shape of concentric circles whose number and diameter increase for more negative tip voltages until full depletion occurs in the probed region. These observations cannot be explained by charging events in material traps, but are consistent with Coulomb blockade in quantum dots forming when the potential fluctuations are raised locally at the Fermi level by the gating action of the tip. This interpretation is supported by simple electrostatic simulations in the case of a disorder potential induced by ionized dopants. This work represents a local investigation of the mechanisms responsible for the disorder-induced metal-to-insulator transition observed in macroscopic two-dimensional electron systems at low enough density.
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Submitted 27 February, 2015;
originally announced February 2015.
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Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks
Authors:
S. Huant,
S. Baltazar,
P. Liu,
H. Sellier,
B. Hackens,
F. Martins,
V. Bayot,
X. Wallart,
L. Desplanque,
M. G. Pala
Abstract:
By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here…
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By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.
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Submitted 6 December, 2013;
originally announced December 2013.
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Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
Authors:
Chloé Rolland,
Philippe Caroff,
Christophe Coinon,
Xavier Wallart,
Renaud Leturcq
Abstract:
We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire face…
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We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.
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Submitted 8 July, 2013;
originally announced July 2013.
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Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island
Authors:
F. Martins,
S. Faniel,
B. Rosenow,
M. G. Pala,
H. Sellier,
S. Huant,
L. Desplanque,
X. Wallart,
V. Bayot,
B. Hackens
Abstract:
We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb b…
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We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb blockade governs transport across the QHI. Varying the microscope tip bias as well as current bias across the device, we uncover the QHI discrete energy spectrum arising from electronic confinement and we extract estimates of the gradient of the confining potential and of the edge state velocity.
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Submitted 7 May, 2013;
originally announced May 2013.
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Coherent tunnelling across a quantum point contact in the quantum Hall regime
Authors:
F. Martins,
S. Faniel,
B. Rosenow,
H. Sellier,
S. Huant,
M. G. Pala,
L. Desplanque,
X. Wallart,
V. Bayot,
B. Hackens
Abstract:
The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC ca…
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The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC can turn into an interferometer for specific potential landscapes. Spectroscopy, magnetic field and temperature dependences of electron transport reveal a quantitatively consistent interferometric behavior of the studied QPC. To explain this unexpected behavior, we put forward a new model which relies on the presence of a quantum Hall island at the centre of the constriction as well as on different tunnelling paths surrounding the island, thereby creating a new type of interferometer. This work sets the ground for new device concepts based on coherent tunnelling.
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Submitted 9 May, 2013; v1 submitted 7 May, 2013;
originally announced May 2013.
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Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox
Authors:
M. G. Pala,
S. Baltazar,
P. Liu,
H. Sellier,
B. Hackens,
F. Martins,
V. Bayot,
X. Wallart,
L. Desplanque,
S. Huant
Abstract:
We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A sc…
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We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A scanning-probe experiment using a biased tip to modulate the transmission of one branch in the network reveals the occurrence of this paradox by mapping the conductance variation as a function of the tip voltage and position.
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Submitted 10 January, 2012; v1 submitted 6 December, 2011;
originally announced December 2011.
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Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
Authors:
Nicolas Reckinger,
Xiaohui Tang Vincent Bayot,
Dmitri A. Yarekha,
Emmanuel Dubois,
Sylvie Godey,
Xavier Wallart,
Guilhem Larrieu,
Adam Laszcz,
Jacek Ratajczak,
Pascal J. Jacques,
Jean-Pierre Raskin
Abstract:
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the S…
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The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.
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Submitted 25 October, 2011;
originally announced October 2011.
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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
Authors:
Hermann Sellier,
Benoit Hackens,
Marco Pala,
Frederico Martins,
Samuel Baltazar,
Xavier Wallart,
Ludovic Desplanque,
Vincent Bayot,
Serge Huant
Abstract:
This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings…
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This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microscopy. These include possible tip induced artefacts, effects of a large bias applied to the scanning tip, as well as consequences of unwanted charge traps on the conductance maps. We emphasize how special care must be paid in interpreting these scanning-gate images.
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Submitted 11 April, 2011;
originally announced April 2011.
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Imaging Coulomb Islands in a Quantum Hall Interferometer
Authors:
B. Hackens,
F. Martins,
S. Faniel,
C. A. Dutu,
H. Sellier,
S. Huant,
M. Pala,
L. Desplanque,
X. Wallart,
V. Bayot
Abstract:
In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electro…
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In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of quantum Hall Coulomb islands, and reveal the spatial structure of transport inside a quantum Hall interferometer. Electron islands locations are found by modulating the tunneling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high magnetic field magnetoresistance oscillations, and opens the way to further local scale manipulations of quantum Hall localized states.
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Submitted 21 October, 2010;
originally announced October 2010.
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Scanning-gate microscopy of semiconductor nanostructures: an overview
Authors:
F. Martins,
B. Hackens,
H. Sellier,
P. Liu,
M. G. Pala,
S. Baltazar,
L. Desplanque,
X. Wallart,
V. Bayot,
S. Huant
Abstract:
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs…
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This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.
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Submitted 19 October, 2010;
originally announced October 2010.
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Imaging Electron Wave Functions Inside Open Quantum Rings
Authors:
F. Martins,
B. Hackens,
M. G. Pala,
T. Ouisse,
H. Sellier,
X. Wallart,
S. Bollaert,
A. Cappy,
J. Chevrier,
V. Bayot,
S. Huant
Abstract:
Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|Ψ|^{2}(x,y)$ in embedded mesoscopic quantum rings (QRs). The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wavefunction interferences. Simulations of bot…
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Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|Ψ|^{2}(x,y)$ in embedded mesoscopic quantum rings (QRs). The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wavefunction interferences. Simulations of both $|Ψ|^{2}(x,y)$ and SGM conductance maps reproduce the main experimental observations and link fringes in SGM images to $|Ψ|^{2}(x,y)$.
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Submitted 2 October, 2007; v1 submitted 3 September, 2007;
originally announced September 2007.
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Imaging and controlling electron transport inside a quantum ring
Authors:
B. Hackens,
F. Martins,
T. Ouisse,
H. Sellier,
S. Bollaert,
X. Wallart,
A. Cappy,
J. Chevrier,
V. Bayot,
S. Huant
Abstract:
Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a detailed image of "how electrons behave down there". Ideally, understanding transport at the nanoscale would require tracking each electron inside the nano-d…
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Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a detailed image of "how electrons behave down there". Ideally, understanding transport at the nanoscale would require tracking each electron inside the nano-device. Significant progress towards this goal was obtained by combining Scanning Probe Microscopy (SPM) with transport measurements2-7. Some studies even showed signatures of quantum transport in the surrounding of nanostructures4-6. Here, SPM is used to probe electron propagation inside an open quantum ring exhibiting the archetype of electron wave interference phenomena: the Aharonov-Bohm effect8. Conductance maps recorded while scanning the biased tip of a cryogenic atomic force microscope above the quantum ring show that the propagation of electrons, both coherent and ballistic, can be investigated in situ, and even be controlled by tuning the tip potential.
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Submitted 14 November, 2006;
originally announced November 2006.
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Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot
Authors:
B. Hackens,
S. Faniel,
F. Delfosse,
C. Gustin,
H. Boutry,
I. Huynen,
X. Wallaert,
S. Bollaert,
A. Cappy,
V. Bayot
Abstract:
We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3K and 204K. We observe two types of magnetoconductance fluctuations: universal conductance fluctuations (UCFs), and 'focusing' fluctuations related to ballistic trajectories between openings. The electron phase coherence time extracted from UCFs amplitude is larger than in GaAs/AlGaAs quantum do…
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We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3K and 204K. We observe two types of magnetoconductance fluctuations: universal conductance fluctuations (UCFs), and 'focusing' fluctuations related to ballistic trajectories between openings. The electron phase coherence time extracted from UCFs amplitude is larger than in GaAs/AlGaAs quantum dots and follows a similar temperature dependence (between T^-1 and T^-2). Below 150K, the characteristic length associated with 'focusing' fluctuations shows a slightly different temperature dependence from that of the conductivity.
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Submitted 4 October, 2002;
originally announced October 2002.
