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arXiv:0709.2120 [pdf, ps, other]
Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates
Abstract: The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In li… ▽ More
Submitted 13 September, 2007; originally announced September 2007.
Comments: 4 pages, 2 figures
Journal ref: Applied Physics Letters 91, 162507 (2007)