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Tunable polar distortions and magnetism in Gd$_x$La$_{1-x}$PtSb epitaxial films
Authors:
Dongxue Du,
Cheyu Zhang,
Jingrui Wei,
Yujia Teng,
Konrad Genser,
Paul M. Voyles,
Karin M. Rabe,
Jason K. Kawasaki
Abstract:
Hexagonal $ABC$ intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of $BC$ atomic planes. We report the impact of isovalent lanthanide substitution on the buckling, structural phase transitions, and electronic and magnetic properties of Gd$_x$La$_{1-x}$PtSb films grown by molecular beam epitaxy (MBE) on c-plane sapph…
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Hexagonal $ABC$ intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of $BC$ atomic planes. We report the impact of isovalent lanthanide substitution on the buckling, structural phase transitions, and electronic and magnetic properties of Gd$_x$La$_{1-x}$PtSb films grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The Gd$_x$La$_{1-x}$PtSb films form a solid solution from x = 0 to 1 and retain the polar hexagonal structure ($P6_3 mc$) out to $x \leq 0.95$. With increasing $x$, the PtSb buckling increases and the out of plane lattice constant $c$ decreases due to the lanthanide contraction. While hexagonal LaPtSb is a highly conductive polar metal, the carrier density decreases with $x$ until an abrupt phase transition to a zero band overlap semimetal is found for cubic GdPtSb at $x=1$. The magnetic susceptibility peaks at small but finite $x$, which we attribute to Ruderman Kittel Kasuya Yosida (RKKY) coupling between localized $4f$ moments, whose concentration increases with $x$, and free carriers that decrease with $x$. Samples with $x\geq 0.3$ show antiferromagnetic Curie-Weiss behavior and a Neel temperature that increases with $x$. The Gd$_x$La$_{1-x}$PtSb system provides opportunities to dramatically alter the polar buckling and concentration of local $4f$ moments, for tuning chiral spin textures and topological phases.
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Submitted 15 August, 2024;
originally announced August 2024.
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Machine Learning Materials Properties with Accurate Predictions, Uncertainty Estimates, Domain Guidance, and Persistent Online Accessibility
Authors:
Ryan Jacobs,
Lane E. Schultz,
Aristana Scourtas,
KJ Schmidt,
Owen Price-Skelly,
Will Engler,
Ian Foster,
Ben Blaiszik,
Paul M. Voyles,
Dane Morgan
Abstract:
One compelling vision of the future of materials discovery and design involves the use of machine learning (ML) models to predict materials properties and then rapidly find materials tailored for specific applications. However, realizing this vision requires both providing detailed uncertainty quantification (model prediction errors and domain of applicability) and making models readily usable. At…
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One compelling vision of the future of materials discovery and design involves the use of machine learning (ML) models to predict materials properties and then rapidly find materials tailored for specific applications. However, realizing this vision requires both providing detailed uncertainty quantification (model prediction errors and domain of applicability) and making models readily usable. At present, it is common practice in the community to assess ML model performance only in terms of prediction accuracy (e.g., mean absolute error), while neglecting detailed uncertainty quantification and robust model accessibility and usability. Here, we demonstrate a practical method for realizing both uncertainty and accessibility features with a large set of models. We develop random forest ML models for 33 materials properties spanning an array of data sources (computational and experimental) and property types (electrical, mechanical, thermodynamic, etc.). All models have calibrated ensemble error bars to quantify prediction uncertainty and domain of applicability guidance enabled by kernel-density-estimate-based feature distance measures. All data and models are publicly hosted on the Garden-AI infrastructure, which provides an easy-to-use, persistent interface for model dissemination that permits models to be invoked with only a few lines of Python code. We demonstrate the power of this approach by using our models to conduct a fully ML-based materials discovery exercise to search for new stable, highly active perovskite oxide catalyst materials.
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Submitted 21 June, 2024;
originally announced June 2024.
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Cold Seeded Epitaxy and Flexomagnetism in Smooth GdAuGe Membranes Exfoliated from graphene/Ge(111)
Authors:
Z LaDuca,
T Samanta,
N Hagopian,
T Jung,
K Su,
K Genser,
K M Rabe,
P M Voyles,
M S Arnold,
J K Kawasaki
Abstract:
Remote and van der Waals epitaxy are promising approaches for synthesizing single crystalline membranes for flexible electronics and discovery of new properties via extreme strain; however, a fundamental challenge is that most materials do not wet the graphene surface. We develop a cold seed approach for synthesizing smooth intermetallic films on graphene that can be exfoliated to form few nanomet…
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Remote and van der Waals epitaxy are promising approaches for synthesizing single crystalline membranes for flexible electronics and discovery of new properties via extreme strain; however, a fundamental challenge is that most materials do not wet the graphene surface. We develop a cold seed approach for synthesizing smooth intermetallic films on graphene that can be exfoliated to form few nanometer thick single crystalline membranes. Our seeded GdAuGe films have narrow x-ray rocking curve widths of 9-24 arc seconds, which is two orders of magnitude lower than their counterparts grown by typical high temperature methods, and have atomically sharp interfaces observed by transmission electron microscopy. Upon exfoliation and rippling, strain gradients in GdAuGe membranes induce an antiferromagnetic to ferri/ferromagnetic transition. Our smooth, ultrathin membranes provide a clean platform for discovering new flexomagnetic effects in quantum materials.
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Submitted 8 June, 2024;
originally announced June 2024.
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Growth and Structure of alpha-Ta films for Quantum Circuit Integration
Authors:
Loren D. Alegria,
Alex Abelson,
Eunjeong Kim,
Soohyun Im,
Paul M. Voyles,
Vincenzo Lordi,
Jonathan L Dubois,
Yaniv J. Rosen
Abstract:
Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we inv…
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Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for growth of fully-oriented films with alpha-Ta [1 1 1] // Al2O3 [0 0 0 1] and alpha-Ta [1 -1 0] // Al2O3 [1 0 -1 0] orientational relationships, and having residual resistivity ratios (RRR) ~ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ~ 30. We further demonstrate airbridge fabrication using Nb to nucleate alpha-Ta on photoresist surfaces. For the films on sapphire, resonators show TLS-limited quality factors of 1.3 +/- 0.3 x 10^6 at 10 mK (for waveguide gap and conductor widths of 3 microns and 6 microns, respectively). Structural characterization using scanning electron microscopy, X-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights for fabrication of advanced superconducting devices including qubit arrays, and guide future work on crystallographically deterministic qubit fabrication.
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Submitted 9 January, 2025; v1 submitted 12 May, 2024;
originally announced May 2024.
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Room-temperature ferromagnetism in epitaxial bilayer FeSb/SrTiO3(001) terminated with a Kagome lattice
Authors:
Huimin Zhang,
Qinxi Liu,
Liangzi Deng,
Yanjun Ma,
Samira Daneshmandi,
Cheng Cen,
Chenyu Zhang,
Paul M. Voyles,
Xue Jiang,
Jijun Zhao,
Ching-Wu Chu,
Zheng Gai,
Lian Li
Abstract:
Two-dimensional (2D) magnets exhibit unique physical properties for potential applications in spintronics. To date, most 2D ferromagnets are obtained by mechanical exfoliation of bulk materials with van der Waals interlayer interactions, and the synthesis of single or few-layer 2D ferromagnets with strong interlayer coupling remains experimentally challenging. Here, we report the epitaxial growth…
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Two-dimensional (2D) magnets exhibit unique physical properties for potential applications in spintronics. To date, most 2D ferromagnets are obtained by mechanical exfoliation of bulk materials with van der Waals interlayer interactions, and the synthesis of single or few-layer 2D ferromagnets with strong interlayer coupling remains experimentally challenging. Here, we report the epitaxial growth of 2D non-van der Waals ferromagnetic bilayer FeSb on SrTiO3(001) substrates stabilized by strong coupling to the substrate, which exhibits in-plane magnetic anisotropy and a Curie temperature above 300 K. In-situ low-temperature scanning tunneling microscopy/spectroscopy and density-functional theory calculations further reveal that a Fe Kagome layer terminates the bilayer FeSb. Our results open a new avenue for further exploring emergent quantum phenomena from the interplay of ferromagnetism and topology for application in spintronics.
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Submitted 9 November, 2023;
originally announced November 2023.
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Machine Learning Prediction of Critical Cooling Rate for Metallic Glasses From Expanded Datasets and Elemental Features
Authors:
Benjamin T. Afflerbach,
Carter Francis,
Lane E. Schultz,
Janine Spethson,
Vanessa Meschke,
Elliot Strand,
Logan Ward,
John H. Perepezko,
Dan Thoma,
Paul M. Voyles,
Izabela Szlufarska,
Dane Morgan
Abstract:
We use a random forest model to predict the critical cooling rate (RC) for glass formation of various alloys from features of their constituent elements. The random forest model was trained on a database that integrates multiple sources of direct and indirect RC data for metallic glasses to expand the directly measured RC database of less than 100 values to a training set of over 2,000 values. The…
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We use a random forest model to predict the critical cooling rate (RC) for glass formation of various alloys from features of their constituent elements. The random forest model was trained on a database that integrates multiple sources of direct and indirect RC data for metallic glasses to expand the directly measured RC database of less than 100 values to a training set of over 2,000 values. The model error on 5-fold cross validation is 0.66 orders of magnitude in K/s. The error on leave out one group cross validation on alloy system groups is 0.59 log units in K/s when the target alloy constituents appear more than 500 times in training data. Using this model, we make predictions for the set of compositions with melt-spun glasses in the database, and for the full set of quaternary alloys that have constituents which appear more than 500 times in training data. These predictions identify a number of potential new bulk metallic glass (BMG) systems for future study, but the model is most useful for identification of alloy systems likely to contain good glass formers, rather than detailed discovery of bulk glass composition regions within known glassy systems.
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Submitted 24 May, 2023;
originally announced May 2023.
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Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films
Authors:
Dongxue Du,
Laxman Raju Thoutam,
Konrad T. Genser,
Chenyu Zhang,
Karin M. Rabe,
Bharat Jalan,
Paul M. Voyles,
Jason K. Kawasaki
Abstract:
We examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry (RBS) and x-ray diffraction measurements suggest that phase pure GdPt$_{x}$Sb films can accommodate up to $15\%$ Pt vacancies ($x=0.85$), which act as acceptors as measured by Hall effect. Two…
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We examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry (RBS) and x-ray diffraction measurements suggest that phase pure GdPt$_{x}$Sb films can accommodate up to $15\%$ Pt vacancies ($x=0.85$), which act as acceptors as measured by Hall effect. Two classes of electrical transport behavior are observed. Pt-deficient films display a metallic temperature dependent resistivity (d$ρ$/dT$>$0). The longitudinal magnetoresistance (LMR, magnetic field $\mathbf{B}$ parallel to electric field $\mathbf{E}$) is more negative than transverse magnetoresistance (TMR, $\mathbf{B} \perp \mathbf{E}$), consistent with the expected chiral anomaly for a Weyl semimetal. The combination of Pt-vacancy disorder and doping away from the expected Weyl nodes; however, suggests conductivity fluctuations may explain the negative LMR rather than chiral anomaly. Samples closer to stoichiometry display the opposite behavior: semiconductor-like resistivity (d$ρ$/dT$<$0) and more negative transverse magnetoresistance than longitudinal magnetoresistance. Hysteresis and other nonlinearities in the low field Hall effect and magnetoresistance suggest that spin disorder scattering, and possible topological Hall effect, may dominate the near stoichiometric samples. Our findings highlight the complications of transport-based identification of Weyl nodes, but point to possible topological spin textures in GdPtSb.
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Submitted 7 April, 2023;
originally announced April 2023.
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Using 4D STEM to probe mesoscale order in molecular glass films prepared by physical vapor deposition
Authors:
Debaditya Chatterjee,
Shuoyuan Huang,
Kaichen Gu,
Jianzhu Ju,
Junguang Yu,
Harald Bock,
Lian Yu,
M. D. Ediger,
Paul M. Voyles
Abstract:
Physical vapor deposition can be used to prepare highly stable organic glass systems where the molecules show orientational and translational ordering at the nanoscale. We have used low-dose four-dimensional scanning transmission electron microscopy (4D STEM), enabled by a fast direct electron detector, to map columnar order in glassy samples of a discotic mesogen using a 2 nm probe. Both vapor de…
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Physical vapor deposition can be used to prepare highly stable organic glass systems where the molecules show orientational and translational ordering at the nanoscale. We have used low-dose four-dimensional scanning transmission electron microscopy (4D STEM), enabled by a fast direct electron detector, to map columnar order in glassy samples of a discotic mesogen using a 2 nm probe. Both vapor deposited and liquid cooled glassy films show domains of similar orientation, but their size varies from tens to hundreds of nanometers, depending on processing. Domain sizes are consistent with surface diffusion mediated ordering during film deposition. These results demonstrate the ability of low-dose 4D STEM to characterize mesoscale structure in a molecular glass system which may be relevant to organic electronics.
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Submitted 21 February, 2023;
originally announced February 2023.
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Nucleation of Al Nanocrystals in Solute-Substituted Al Metallic Glasses I: Structural characterization
Authors:
Feng Yi,
S. D. Imhoff,
J. H. Perepezko,
P. M. Voyles
Abstract:
Primary crystallization in high Al-content metallic glasses is driven by nanometer-diameter regions with internal structure similar to fcc Al. Comparison of fluctuation electron microscopy (FEM) data to FEM simulations of fcc Al clusters dispersed in a dense-random packed matrix is used to extract the diameter and volume fraction of the ordered regions in a Al88Y7Fe5 base glass and in glasses with…
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Primary crystallization in high Al-content metallic glasses is driven by nanometer-diameter regions with internal structure similar to fcc Al. Comparison of fluctuation electron microscopy (FEM) data to FEM simulations of fcc Al clusters dispersed in a dense-random packed matrix is used to extract the diameter and volume fraction of the ordered regions in a Al88Y7Fe5 base glass and in glasses with 1 at.% Cu substituted for Y or Al. The size and density of nanocrystals were measured as a function of isothermal annealing time for the same alloys. The volume fraction of crystalline material grows under isothermal annealing, so the phase transformation is not purely grain coarsening, but the crystalline volume fraction is lower than the volume fraction of ordered regions in the as-quenched samples, so not all of the ordered regions act as nuclei. Changes in diameter and volume fraction of the ordered regions with alloying are correlated with changes in the crystallization temperature, nucleation rate, and nanocrystal density. No evidence for phase separation is observed, and FEM simulations from a molecular dynamics quenched structural model of similar composition do not show the features observed in experiment.
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Submitted 11 January, 2023;
originally announced January 2023.
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Distribution of atomic rearrangement vectors in a metallic glass
Authors:
Ajay Annamareddy,
Bu Wang,
Paul M. Voyles,
Dane Morgan
Abstract:
Short-timescale atomic rearrangements are fundamental to the kinetics of glasses and frequently dominated by one atom moving significantly (a rearrangement), while others relax only modestly. The rates and directions of such rearrangements (or hops) are dominated by the distributions of activation barriers (Eact) for rearrangement for a single atom and how those distributions vary across the atoms…
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Short-timescale atomic rearrangements are fundamental to the kinetics of glasses and frequently dominated by one atom moving significantly (a rearrangement), while others relax only modestly. The rates and directions of such rearrangements (or hops) are dominated by the distributions of activation barriers (Eact) for rearrangement for a single atom and how those distributions vary across the atoms in the system. We have used molecular dynamics simulations of Cu50Zr50 metallic glass below Tg in an isoconfigurational ensemble to catalog the ensemble of rearrangements from thousands of sites. The majority of atoms are strongly caged by their neighbors, but a tiny fraction has a very high propensity for rearrangement, which leads to a power-law variation in the cage-breaking probability for the atoms in the model. In addition, atoms generally have multiple accessible rearrangement vectors, each with its own Eact. However, atoms with lower Eact (or higher rearrangement rates) generally explored fewer possible rearrangement vectors, as the low Eact path is explored far more than others. We discuss how our results influence future modeling efforts to predict the rearrangement vector of a hopping atom.
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Submitted 16 November, 2022;
originally announced November 2022.
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Benchmark tests of atom segmentation deep learning models with a consistent dataset
Authors:
Jingrui Wei,
Ben Blaiszik,
Aristana Scourtas,
Dane Morgan,
Paul M. Voyles
Abstract:
The information content of atomic resolution scanning transmission electron microscopy (STEM) images can often be reduced to a handful of parameters describing each atomic column, chief amongst which is the column position. Neural networks (NNs) are a high performance, computationally efficient method to automatically locate atomic columns in images, which has led to a profusion of NN models and a…
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The information content of atomic resolution scanning transmission electron microscopy (STEM) images can often be reduced to a handful of parameters describing each atomic column, chief amongst which is the column position. Neural networks (NNs) are a high performance, computationally efficient method to automatically locate atomic columns in images, which has led to a profusion of NN models and associated training datasets. We have developed a benchmark dataset of simulated and experimental STEM images and used it to evaluate the performance of two sets of recent NN models for atom location in STEM images. Both models exhibit high performance for images of varying quality from several different crystal lattices. However, there are important differences in performance as a function of image quality, and both models perform poorly for images outside the training data, such as interfaces with large difference in background intensity. Both the benchmark dataset and the models are available using the Foundry service for dissemination, discovery, and reuse of machine learning models.
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Submitted 20 July, 2022;
originally announced July 2022.
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Structural tunability and origin of two-level systems in amorphous silicon
Authors:
H. C. Jacks,
M. Molina-Ruiz,
M. H. Weber,
J. J. Maldonis,
P. M. Voyles,
T. H. Metcalf,
X. Liu,
F. Hellman
Abstract:
Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films of thickness greater than ~300 nm are grown at 425 $^{\circ}$C and at <1 $Å$/sec. A combination of spectroscopic techniques provide insight into atomi…
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Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films of thickness greater than ~300 nm are grown at 425 $^{\circ}$C and at <1 $Å$/sec. A combination of spectroscopic techniques provide insight into atomic disorder, local strains, dangling bonds, and nanovoids. Electron diffraction shows that the short-range order of the amorphous silicon is similar at all growth temperatures, but fluctuation electron microscopy shows that films grown above room-temperature show a form of medium-range order not previously observed in amorphous silicon. Atomic disorder and local strain obtained from Raman spectroscopy reduce with increasing growth temperature and show a non-monotonic dependence on thickness. Dangling bond density decreases with increasing growth temperature and is only mildly dependent on thickness. Positron annihilation Doppler broadening spectroscopy and electron energy loss spectroscopy show that nanovoids, and not density variations within the network, are responsible for reduced atomic density. Specific heat and mechanical loss measurements, which quantify the density of tunneling two-level systems, in combination with the structural data, suggest that two-level systems in amorphous silicon films are associated with nanovoids and their surroundings; which are in essence loosely bonded regions where atoms are less constrained.
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Submitted 21 November, 2021;
originally announced November 2021.
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Mechanisms of bulk and surface diffusion in metallic glasses determined from molecular dynamics simulations
Authors:
Ajay Annamareddy,
Paul M. Voyles,
John Perepezko,
Dane Morgan
Abstract:
The bulk and surface dynamics of Cu50Zr50 metallic glass were studied using classical molecular dynamics (MD) simulations. As the alloy undergoes cooling, it passes through liquid, supercooled, and glassy states. While bulk dynamics showed a marked slowing down prior to glass formation, with increasing activation energy, the slowdown in surface dynamics was relatively subtle. The surface exhibited…
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The bulk and surface dynamics of Cu50Zr50 metallic glass were studied using classical molecular dynamics (MD) simulations. As the alloy undergoes cooling, it passes through liquid, supercooled, and glassy states. While bulk dynamics showed a marked slowing down prior to glass formation, with increasing activation energy, the slowdown in surface dynamics was relatively subtle. The surface exhibited a lower glass transition temperature than the bulk, and the dynamics preceding the transition were accurately described by a temperature-independent activation energy. Surface dynamics were much faster than bulk at a given temperature in the supercooled state, but surface and bulk dynamics were found to be very similar when compared at their respective glass transition temperatures. The manifestation of dynamical heterogeneity, as characterized by the non-Gaussian parameter and breakdown of the Stokes-Einstein equation, was also similar between bulk and surface for temperatures scaled by their respective glass transition temperatures. Individual atom motion was dominated by a cage and jump mechanism in the glassy state for both the bulk and surface. We utilize this cage and jump mechanisms to separate the activation energy for diffusion into two parts: (i) cage-breaking barrier (Q1), associated with the rearrangement of neighboring atoms to free up space and (ii) the subsequent jump barrier (Q2). It was observed that Q1 dominates Q2 for both bulk and surface diffusion, and the difference in activation energies for bulk and surface diffusion mainly arose from the differences in cage-breaking barrier Q1.
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Submitted 20 August, 2021;
originally announced August 2021.
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Molecular simulation-derived features for machine learning predictions of metal glass forming ability
Authors:
Benjamin T. Afflerbach,
Lane Schultz,
John H. Perepezko,
Paul M. Voyles,
Izabela Szlufarska,
Dane Morgan
Abstract:
We have developed models of metallic alloy glass forming ability based on newly computationally accessible features obtained from molecular dynamics simulations. In this work we showed that it is possible to increase the predictive value of GFA models by using input features obtained from molecular dynamics simulations. Such features require only relatively straightforward and scalable simulations…
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We have developed models of metallic alloy glass forming ability based on newly computationally accessible features obtained from molecular dynamics simulations. In this work we showed that it is possible to increase the predictive value of GFA models by using input features obtained from molecular dynamics simulations. Such features require only relatively straightforward and scalable simulations, making them significantly easier and less expensive to obtain than experimental measurements. We generated a database of molecular dynamics critical cooling rates along with associated candidate features that are inspired from previous research on GFA. Out of the list of 9 proposed GFA features, we identify two as being the most important to performance through a LASSO model. Enthalpy of crystallization and icosahedral-like fraction at 100 K showed promise because they enable a significant improvement to model performance and because they are accessible to flexible ab initio quantum mechanical methods readily applicable to almost all systems. This advancement in computationally accessible features for machine learning predictions GFA will enable future models to more accurately predict new glass forming alloys.
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Submitted 19 August, 2021;
originally announced August 2021.
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Factors correlating to enhanced surface diffusion in metallic glasses
Authors:
Ajay Annamareddy,
Yuhui Li,
Lian Yu,
Paul M. Voyles,
Dane Morgan
Abstract:
The enhancement of surface diffusion (DS) over the bulk (DV) in metallic glasses (MGs) is well documented and likely to strongly influence the properties of glasses grown by vapor deposition. Here, we use classical molecular dynamics simulations to identify different factors influencing the enhancement of surface diffusion in MGs. MGs have a simple atomic structure and belong to the category of mo…
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The enhancement of surface diffusion (DS) over the bulk (DV) in metallic glasses (MGs) is well documented and likely to strongly influence the properties of glasses grown by vapor deposition. Here, we use classical molecular dynamics simulations to identify different factors influencing the enhancement of surface diffusion in MGs. MGs have a simple atomic structure and belong to the category of moderately fragile glasses that undergo pronounced slowdown of bulk dynamics with cooling close to the glass transition temperature (Tg). We observe that DS exhibits a much more moderate slowdown compared to DV when approaching Tg, and DS/DV at Tg varies by two orders of magnitude among the MGs investigated. We demonstrate that both the surface energy and the fraction of missing bonds for surface atoms show good correlation to DS/DV, implying that the loss of nearest neighbors at the surface directly translates into higher mobility, unlike the behavior of network- and hydrogen-bonded organic glasses. Fragility, a measure of the slowdown of bulk dynamics close to Tg, also correlates to DS/DV, with more fragile systems having larger surface enhancement of mobility. The deviations observed in the fragility and DS over DV relationship are shown to be correlated to the extent of segregation or depletion of the mobile element at the surface. Finally, we explore the relationship between the diffusion pre-exponential factor (D0) and activation energy (Q) and compare to a ln(D0)-Q correlation previously established for bulk glasses, demonstrating similar correlations from MD as in the experiments and that the surface and bulk have very similar ln(D0)-Q correlations.
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Submitted 18 August, 2021;
originally announced August 2021.
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Exploration of Characteristic Temperature Contributions to Metallic Glass Forming Ability
Authors:
Lane E. Schultz,
Benjamin Afflerbach,
Carter Francis,
Paul M. Voyles,
Izabela Szlufarska,
Dane Morgan
Abstract:
Various combinations of characteristic temperatures, such as the glass transition temperature, liquidus temperature, and crystallization temperature, have been proposed as predictions of the glass forming ability of metal alloys. We have used statistical approaches from machine learning to systematically explore a wide range of possible characteristic temperature functions for predicting glass for…
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Various combinations of characteristic temperatures, such as the glass transition temperature, liquidus temperature, and crystallization temperature, have been proposed as predictions of the glass forming ability of metal alloys. We have used statistical approaches from machine learning to systematically explore a wide range of possible characteristic temperature functions for predicting glass forming ability in the form of critical casting diameter, $D_{max}$. Both linear and non-linear models were used to learn on the largest database of $D_{max}$ values to date consisting of 747 compositions. We find that no combination of temperatures for features offers a better prediction of $D_{max}$ in a machine learning model than the temperatures themselves, and that regression models suffer from poor performance on standard machine learning metrics like root mean square error (minimum value of $3.3 \pm 0.1$ $mm$ for data with a standard deviation of 4.8 $mm$). Examination of the errors vs. database size suggest that a larger database may improve results, although a database significantly larger than that used here would likely be required. Shifting a focus from regression to categorization models learning from characteristic temperatures can be used to weakly distinguish glasses likely to be above vs. below our database's median $D_{max}$ value of 4.0 $mm$, with a mean F1 score of $0.77 \pm 0.02$ for this categorization. The overall weak results on predicting $D_{max}$ suggests that critical cooling rate might be a better target for machine learning model prediction.
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Submitted 29 July, 2021;
originally announced July 2021.
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Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes
Authors:
Dongxue Du,
Sebastian Manzo,
Chenyu Zhang,
Vivek Saraswat,
Konrad T. Genser,
Karin M. Rabe,
Paul M. Voyles,
Michael S. Arnold,
Jason K. Kawasaki
Abstract:
Single-crystalline membranes of functional materials enable the tuning of properties via extreme strain states; however, conventional routes for producing membranes require the use of sacrificial layers and chemical etchants, which can both damage the membrane and limit the ability to make them ultrathin. Here we demonstrate the epitaxial growth of the cubic Heusler compound GdPtSb on graphene-ter…
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Single-crystalline membranes of functional materials enable the tuning of properties via extreme strain states; however, conventional routes for producing membranes require the use of sacrificial layers and chemical etchants, which can both damage the membrane and limit the ability to make them ultrathin. Here we demonstrate the epitaxial growth of the cubic Heusler compound GdPtSb on graphene-terminated Al$_2$O$_3$ substrates. Despite the presence of the graphene interlayer, the Heusler films have epitaxial registry to the underlying sapphire, as revealed by x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy. The weak Van der Waals interactions of graphene enable mechanical exfoliation to yield free-standing GdPtSb membranes, which form ripples when transferred to a flexible polymer handle. Whereas unstrained GdPtSb is antiferromagnetic, measurements on rippled membranes show a spontaneous magnetic moment at room temperature, with a saturation magnetization of 5.2 bohr magneton per Gd. First-principles calculations show that the coupling to homogeneous strain is too small to induce ferromagnetism, suggesting a dominant role for strain gradients. Our membranes provide a novel platform for tuning the magnetic properties of intermetallic compounds via strain (piezomagnetixm and magnetostriction) and strain gradients (flexomagnetism).
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Submitted 3 April, 2021; v1 submitted 17 June, 2020;
originally announced June 2020.
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Semi-adsorption-controlled growth window for half Heusler FeVSb epitaxial films
Authors:
Estiaque H. Shourov,
Ryan Jacobs,
Wyatt A. Behn,
Zachary J. Krebs,
Chenyu Zhang,
Patrick J. Strohbeen,
Dongxue Du,
Paul M. Voyles,
Victor W. Brar,
Dane D. Morgan,
Jason K. Kawasaki
Abstract:
The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a \textit{semi} adsorption-controlled growth window for semiconducting half Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to th…
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The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a \textit{semi} adsorption-controlled growth window for semiconducting half Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to the high volatility of Sb, the Sb stoichiometry is self-limiting for a finite range of growth temperatures and Sb fluxes, similar to the growth of III-V semiconductors such as GaSb and GaAs. Films grown within this window are nearly structurally indistinguishable by X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). The highest electron mobility and lowest background carrier density are obtained towards the Sb-rich bound of the window, suggesting that Sb-vacancies may be a common defect. Similar \textit{semi} adsorption-controlled bounds are expected for other ternary intermetallics that contain a volatile species $Z=$\{Sb, As, Bi\}, e.g., CoTiSb, LuPtSb, GdPtBi, and NiMnSb. However, outstanding challenges remain in controlling the remaining Fe/V ($X/Y$) transition metal stoichiometry.
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Submitted 27 September, 2020; v1 submitted 12 March, 2020;
originally announced March 2020.
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Control of polymorphism during epitaxial growth of hyperferroelectric candidate LiZnSb on GaSb (111)B
Authors:
Dongxue Du,
Patrick J. Strohbeen,
Hanjong Paik,
Chenyu Zhang,
Konrad Genser,
Karin M. Rabe,
Paul M. Voyles,
Darrell G. Schlom,
Jason K. Kawasaki
Abstract:
A major challenge for ferroelectric devices is the depolarization field, which competes with and often destroys long-range polar order in the limit of ultrathin films. Recent theoretical predictions suggest a new class of materials, termed hyperferroelectics, that should be robust against the depolarization field and enable ferroelectricity down to the monolayer limit. Here we demonstrate the epit…
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A major challenge for ferroelectric devices is the depolarization field, which competes with and often destroys long-range polar order in the limit of ultrathin films. Recent theoretical predictions suggest a new class of materials, termed hyperferroelectics, that should be robust against the depolarization field and enable ferroelectricity down to the monolayer limit. Here we demonstrate the epitaxial growth of hexagonal LiZnSb, one of the hyperferroelectric candidate materials, by molecular-beam epitaxy on GaSb (111)B substrates. Due to the high volatility of all three atomic species, we find that LiZnSb can be grown in an adsorption-controlled window, using an excess zinc flux. Within this window, the desired polar hexagonal phase is stabilized with respect to a competing cubic polymorph, as revealed by X-ray diffraction and transmission electron microscopy measurements. First-principles calculations show that for moderate amounts of epitaxial strain and moderate concentrations of Li vacancies, the cubic LiZnSb phase is lower in formation energy than the hexagonal phase, but only by a few meV per formula unit. Therefore we suggest that kinetics plays a role in stabilizing the desired hexagonal phase at low temperatures. Our results provide a path towards experimentally demonstrating ferroelectricity and hyperferroelectricity in a new class of ternary intermetallic compounds.
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Submitted 15 January, 2020;
originally announced January 2020.
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Electronically enhanced layer buckling and Au-Au dimerization in epitaxial LaAuSb films
Authors:
Patrick J. Strohbeen,
Dongxue Du,
Chenyu Zhang,
Estiaque H. Shourov,
Fanny Rodolakis,
Jessica L. McChesney,
Paul M. Voyles,
Jason K. Kawasaki
Abstract:
We report the molecular beam epitaxial growth, structure, and electronic measurements of single-crystalline LaAuSb films on Al$_2$O$_3$ (0001) substrates. LaAuSb belongs to a broad family of hexagonal $ABC$ intermetallics in which the magnitude and sign of layer buckling have strong effects on properties, e.g., predicted hyperferroelecticity, polar metallicity, and Weyl and Dirac states. Scanning…
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We report the molecular beam epitaxial growth, structure, and electronic measurements of single-crystalline LaAuSb films on Al$_2$O$_3$ (0001) substrates. LaAuSb belongs to a broad family of hexagonal $ABC$ intermetallics in which the magnitude and sign of layer buckling have strong effects on properties, e.g., predicted hyperferroelecticity, polar metallicity, and Weyl and Dirac states. Scanning transmission electron microscopy reveals highly buckled planes of Au-Sb atoms, with strong interlayer Au-Au interactions and a doubling of the unit cell. This buckling is four times larger than the buckling observed in other $ABC$s with similar composition, e.g. LaAuGe and LaPtSb. Photoemission spectroscopy measurements and comparison with theory suggest an electronic driving force for the Au-Au dimerization, since LaAuSb, with a 19-electron count, has one more valence electron per formula unit than most stable $ABC$s. Our results suggest that the electron count, in addition to conventional parameters such as epitaxial strain and chemical pressure, provides a powerful means for tuning the layer buckling in ferroic $ABC$s.
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Submitted 25 January, 2019;
originally announced January 2019.
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Local Structure Controlling the Glass Transition in a Prototype Metal-Metalloid Glass
Authors:
Jason J. Maldonis,
Paul M. Voyles
Abstract:
We use a structure analysis technique that quantifies cluster geometries using machine learning to identify a bicapped square antiprism (BSAP) as the nearest-neighbor cluster involved in the glass transition in Pd82Si18, a prototype metal-metalloid metallic glass. BSAPs have slow dynamics and grow significantly in concentration during cooling, like icosahedra in other systems. These results are ev…
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We use a structure analysis technique that quantifies cluster geometries using machine learning to identify a bicapped square antiprism (BSAP) as the nearest-neighbor cluster involved in the glass transition in Pd82Si18, a prototype metal-metalloid metallic glass. BSAPs have slow dynamics and grow significantly in concentration during cooling, like icosahedra in other systems. These results are evidence that some preferred structures universally contribute to the glass transition and show that analysis of interatomic geometry can find important structures not revealed by topology.
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Submitted 21 January, 2019;
originally announced January 2019.
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Short-Range Order Structure Motifs Learned from an Atomistic Model of a Zr$_{50}$Cu$_{45}$Al$_{5}$ Metallic Glass
Authors:
Jason J. Maldonis,
Arash Dehghan Banadaki,
Srikanth Patala,
Paul M. Voyles
Abstract:
The structural motifs of a Zr$_{50}$Cu$_{45}$Al$_{5}$ metallic glass were learned from atomistic models using a new structure analysis method called motif extraction that employs point-pattern matching and machine learning clustering techniques. The motifs are the nearest-neighbor building blocks of the glass and reveal a well-defined hierarchy of structures as a function of coordination number. S…
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The structural motifs of a Zr$_{50}$Cu$_{45}$Al$_{5}$ metallic glass were learned from atomistic models using a new structure analysis method called motif extraction that employs point-pattern matching and machine learning clustering techniques. The motifs are the nearest-neighbor building blocks of the glass and reveal a well-defined hierarchy of structures as a function of coordination number. Some of the motifs are icosahedral or quasi-icosahedral in structure, while others take on the structure of the most close-packed geometries for each coordination number. These results set the stage for developing clearer structure-property connections in metallic glasses. Motif extraction can be applied to any disordered material to identify its structural motifs without the need for human input.
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Submitted 13 January, 2019;
originally announced January 2019.
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StructOpt: A modular materials structure optimization suite incorporating experimental data and simulated energies
Authors:
Jason J. Maldonis,
Zhongnan Xu,
Zhewen Song,
Min Yu,
Tam Mayeshiba,
Dane Morgan,
Paul M. Voyles
Abstract:
StructOpt, an open-source structure optimization suite, applies genetic algorithm and particle swarm methods to obtain atomic structures that minimize an objective function. The objective function typically consists of the energy and the error between simulated and experimental data, which is typically applied to determine structures that minimize energy to the extent possible while also being ful…
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StructOpt, an open-source structure optimization suite, applies genetic algorithm and particle swarm methods to obtain atomic structures that minimize an objective function. The objective function typically consists of the energy and the error between simulated and experimental data, which is typically applied to determine structures that minimize energy to the extent possible while also being fully consistent with available experimental data. We present example use cases including the structure of a metastable Pt nanoparticle determined from energetic and scanning transmission electron microscopy data, and the structure of an amorphous-nanocrystal composite determined from energetic and fluctuation electron microscopy data. StructOpt is modular in its construction and therefore is naturally extensible to include new materials simulation modules or new optimization methods, either written by the user or existing in other code packages. It uses the Message Passing Interface's (MPI) dynamic process management functionality to allocate resources to computationally expensive codes on the fly, enabling StructOpt to take full advantage of the parallelization tools available in many scientific packages.
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Submitted 4 January, 2019;
originally announced January 2019.
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Point-Pattern Matching Technique for Local Structural Analysis in Condensed Matter
Authors:
Arash Dehghan Banadaki,
Jason J. Maldonis,
Paul M. Voyles,
Srikanth Patala
Abstract:
The local arrangement of atoms is one of the most important predictors of mechanical and functional properties of materials. However, algorithms for identifying the geometrical arrangements of atoms in complex materials systems are lacking. To address this challenge, we present a point-pattern matching algorithm that can detect instances of a `template' structure in a given set of atom coordinates…
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The local arrangement of atoms is one of the most important predictors of mechanical and functional properties of materials. However, algorithms for identifying the geometrical arrangements of atoms in complex materials systems are lacking. To address this challenge, we present a point-pattern matching algorithm that can detect instances of a `template' structure in a given set of atom coordinates. To our knowledge this is the first geometrical comparison technique for atomistic configurations with very different number of atoms, and when the optimal rotations and translations required to align the configurations are unknown. The pattern matching algorithm can be combined with an appropriate set of metrics to quantify the similarity or dissimilarity between configurations of atoms. We demonstrate the unique capabilities of the point-pattern matching algorithm using two examples where the automated analysis of local atomistic structure can help advance the understanding of structure-property relationships in material science: (a) identifying local three-dimensional polyhedral units along interfacial defects, and (b) the analysis of quasi-icosahedral topologies in the atomistic structure of metallic glasses. We anticipate that the pattern matching algorithm will be applicable in the analysis of atomistic structures in broad areas of condensed matter systems, including biological molecules, polymers and disordered metallic systems. An online implementation of the algorithm is provided via the open source code hosted on GitHub (https://github.com/spatala/ppm3d).
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Submitted 11 April, 2019; v1 submitted 14 November, 2018;
originally announced November 2018.
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L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions
Authors:
De-Lin Zhang,
Congli Sun,
Yang Lv,
Karl B. Schliep,
Zhengyang Zhao,
Jun-Yang Chen,
Paul M. Voyles,
Jian-Ping Wang
Abstract:
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultra-fast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic…
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Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultra-fast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a (001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 FePd P-SAFM structure shows a large bulk PMA (~10.2 Merg/cc) and strong antiferromagnetic coupling (~2.60 erg/cm2). Full perpendicular magnetic tunnel junctions (P-MTJs) with a L10 FePd P-SAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to ~25% (~60%) are observed at room temperature (5K) after post-annealing at 350 C. Exhibiting high thermal stabilities and large Ku, the bulk P-MTJs with an L10 FePd P-SAFM layer could pave a way for next-generation ultrahigh-density and ultra-low-energy spintronic applications.
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Submitted 17 May, 2018;
originally announced May 2018.
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Imaging of Single La Vacancies in LaMnO$_{3}$
Authors:
Jie Feng,
Alexander V. Kvit,
Chenyu Zhang,
Jason Hoffman,
Anand Bhattacharya,
Dane Morgan,
Paul M. Voyles
Abstract:
We report an approach for three-dimensional imaging of single vacancies using high precision quantitative high-angle annular dark-field Z-contrast scanning transmission electron microscopy (STEM). Vacancies are identified by both the reduction in scattered intensity created by the missing atom and the distortion of the surrounding atom positions. Vacancy positions are determined laterally to a uni…
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We report an approach for three-dimensional imaging of single vacancies using high precision quantitative high-angle annular dark-field Z-contrast scanning transmission electron microscopy (STEM). Vacancies are identified by both the reduction in scattered intensity created by the missing atom and the distortion of the surrounding atom positions. Vacancy positions are determined laterally to a unique lattice site in the image and in depth to within one of two lattice sites by dynamical diffraction effects. 35 single La vacancies are identified in images of a LaMnO3 thin film sample. The vacancies are randomly distributed in depth and correspond to a La vacancy concentration of 0.79%, which is consistent with the level of control of cation stoichiometry within our synthesis process (~1%) and with the equilibrium concentration of La vacancies under the film growth conditions. This work demonstrates an approach to characterizing low concentrations of vacancies with high spatial resolution.
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Submitted 16 November, 2017;
originally announced November 2017.
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Spatially Heterogeneous Dynamics in a Metallic Glass Forming Liquid Imaged by Electron Correlation Microscopy
Authors:
Pei Zhang,
Jason J. Maldonis,
Ze Liu,
Jan Schroers,
Paul M. Voyles
Abstract:
Supercooled liquids exhibit spatial heterogeneity in the dynamics of their fluctuating atomic arrangements. The length and time scales of the heterogeneous dynamics are central to the glass transition and influence nucleation and growth of crystals from the liquid. We report direct experimental visualization of the spatially heterogeneous dynamics as a function of temperature in the supercooled li…
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Supercooled liquids exhibit spatial heterogeneity in the dynamics of their fluctuating atomic arrangements. The length and time scales of the heterogeneous dynamics are central to the glass transition and influence nucleation and growth of crystals from the liquid. We report direct experimental visualization of the spatially heterogeneous dynamics as a function of temperature in the supercooled liquid state of a Pt-based metallic glass, using electron correlation microscopy with sub-nanometer resolution. An experimental four point space-time intensity correlation function demonstrates a growing dynamic correlation length, $ξ$, upon cooling of the liquid toward the glass transition temperature. $ξ$ as a function of the relaxation time $τ$ data are in the good agreement with the Adam-Gibbs, inhomogeneous mode coupling theory and random first order transition theory of the glass transition. The same experiments demonstrate the existence of a nanometer thickness near surface layer with order of magnitude shorter relaxation time than inside the bulk.
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Submitted 25 January, 2018; v1 submitted 12 October, 2017;
originally announced October 2017.
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Electrical control of metallic heavy-metal/ferromagnet interfacial states
Authors:
Chong Bi,
Congli Sun,
Meng Xu,
Ty Newhouse-Illige,
Paul M. Voyles,
Weigang Wang
Abstract:
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic systems, there is no electric field due to electron screening effects and thus no such control effect exists. Here we demonstrate that metallic systems can also be con…
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Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic systems, there is no electric field due to electron screening effects and thus no such control effect exists. Here we demonstrate that metallic systems can also be controlled electrically through ionic not electronic effects. In a Pt/Co structure, the control of the metallic Pt/Co interface can lead to unprecedented control effects on the magnetic properties of the entire structure. Consequently, the magnetization and perpendicular magnetic anisotropy of the Co layer can be independently manipulated to any desired state, the efficient spin toques can be enhanced about 3.5 times, and the switching current can be reduced about one order of magnitude. This ability to control a metallic system may be extended to control other physical phenomena.
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Submitted 21 August, 2017;
originally announced August 2017.
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Counterintuitive Reconstruction of the Polar O-Terminated ZnO Surface With Zinc Vacancies and Hydrogen
Authors:
Ryan Jacobs,
Bing Zheng,
Brian Puchala,
Paul M. Voyles,
Andrew B. Yankovich,
Dane Morgan
Abstract:
Understanding the structure of ZnO surface reconstructions and their resultant properties is crucial to the rational design of ZnO-containing devices ranging from optoelectronics to catalysts. Here, we are motivated by recent experimental work which showed a new surface reconstruction containing Zn vacancies ordered in a Zn(3x3) pattern in the subsurface of (0001)-O terminated ZnO. A reconstructio…
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Understanding the structure of ZnO surface reconstructions and their resultant properties is crucial to the rational design of ZnO-containing devices ranging from optoelectronics to catalysts. Here, we are motivated by recent experimental work which showed a new surface reconstruction containing Zn vacancies ordered in a Zn(3x3) pattern in the subsurface of (0001)-O terminated ZnO. A reconstruction with Zn vacancies on (0001)-O is surprising and counterintuitive because Zn vacancies enhance the surface dipole rather than reduce it. In this work, we show using Density Functional Theory (DFT) that subsurface Zn vacancies can form on (0001)-O when coupled with adsorption of surface H and are in fact stable under a wide range of common conditions. We also show these vacancies have a significant ordering tendency and that Sb-doping created subsurface inversion domain boundaries (IDBs) enhances the driving force of Zn vacancy alignment into large domains of the Zn(3x3) reconstruction.
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Submitted 1 February, 2017;
originally announced February 2017.
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Evolution of small defect clusters in ion-irradiated 3C-SiC: combined cluster dynamics modeling and experimental study
Authors:
C. Liu,
L. He,
Y. Zhai,
B. Tyburska-Püschel,
P. M. Voyles,
K. Sridharan,
D. Morgan,
I. Szlufarska
Abstract:
Distribution of black spot defects and small clusters in 1 MeV krypton irradiated 3C-SiC has been investigated using advanced scanning transmission electron microscopy (STEM) and TEM. We find that two thirds of clusters smaller than 1 nm identified in STEM are invisible in TEM images. For clusters that are larger than 1 nm, STEM and TEM results match very well. A cluster dynamics model has been de…
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Distribution of black spot defects and small clusters in 1 MeV krypton irradiated 3C-SiC has been investigated using advanced scanning transmission electron microscopy (STEM) and TEM. We find that two thirds of clusters smaller than 1 nm identified in STEM are invisible in TEM images. For clusters that are larger than 1 nm, STEM and TEM results match very well. A cluster dynamics model has been developed for SiC to reveal processes that contribute to evolution of defect clusters and validated against the (S)TEM results. Simulations showed that a model based on established properties of point defects (PDs) generation, reaction, clustering, and cluster dissociation, is unable to predict black spot defects distribution consistent with STEM observations. This failure suggests that additional phenomena not included in a simple point-defect picture may contribute to radiation-induced evolution of defect clusters in SiC and using our model we have determined the effects of a number of these additional phenomena on cluster evolution. Using these additional phenomena it is possible to fit parameters within physically justifiable ranges that yield agreement between cluster distributions predicted by simulations and those measured experimentally.
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Submitted 3 January, 2017;
originally announced January 2017.
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Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves
Authors:
T. A. Peterson,
S. J. Patel,
C. C. Geppert,
K. D. Christie,
A. Rath,
D. Pennachio,
M. E. Flatté,
P. M. Voyles,
C. J. Palmstrøm,
P. A. Crowell
Abstract:
We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. Th…
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We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured $n$-GaAs spin lifetime over the entire temperature range.
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Submitted 12 October, 2016;
originally announced October 2016.
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Radiation-induced mobility of small defect clusters in covalent materials
Authors:
Hao Jiang,
Li He,
Dane Morgan,
Paul M. Voyles,
Izabela Szlufarska
Abstract:
Although defect clusters are detrimental to electronic and mechanical properties of semiconductor materials, annihilation of such clusters is limited by their lack of thermal mobility due to high migration barriers. Here, we find that small clusters in bulk SiC (a covalent material of importance for both electronic and nuclear applications) can become mobile at room temperature under the influence…
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Although defect clusters are detrimental to electronic and mechanical properties of semiconductor materials, annihilation of such clusters is limited by their lack of thermal mobility due to high migration barriers. Here, we find that small clusters in bulk SiC (a covalent material of importance for both electronic and nuclear applications) can become mobile at room temperature under the influence of electron radiation. So far, direct observation of radiation-induced diffusion of defect clusters in bulk materials has not been demonstrated yet. This finding was made possible by low angle annular dark field (LAADF) scanning transmission electron microscopy (STEM) combined with non-rigid registration technique to remove sample instability, which enables atomic resolution imaging of small migrating defect clusters. We show that the underlying mechanism of this athermal diffusion is ballistic collision between incoming electrons and cluster atoms. Our findings suggest that defect clusters may be mobile under certain irradiation conditions, changing current understanding of cluster annealing process in irradiated covalent materials.
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Submitted 2 August, 2016;
originally announced August 2016.
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FEMSIM+HRMC: Simulation of and Structural Refinement using Fluctuation Electron Microscopy for Amorphous Materials
Authors:
Jason J. Maldonis,
Jinwoo Hwang,
Paul M. Voyles
Abstract:
FEMSIM, a Fortran code, has been developed to simulate the fluctuation electron microscopy signal, the variance, V(k), from a model atomic structure. FEMSIM has been incorporated into a hybrid-reverse Monte Carlo code that combines an embedded atom or Finnis-Sinclair potential with the deviation between simulated and experimental V(k) data to refine an atomic model with structure constrained by bo…
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FEMSIM, a Fortran code, has been developed to simulate the fluctuation electron microscopy signal, the variance, V(k), from a model atomic structure. FEMSIM has been incorporated into a hybrid-reverse Monte Carlo code that combines an embedded atom or Finnis-Sinclair potential with the deviation between simulated and experimental V(k) data to refine an atomic model with structure constrained by both the potential and experimental data. The resulting models have experimentally-derived medium-range order.
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Submitted 14 July, 2016;
originally announced July 2016.
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Domain configurations in Co/Pd and L10-FePt nanowire arrays with perpendicular magnetic anisotropy
Authors:
Pin Ho,
Kun-Hua Tu,
Jinshuo Zhang,
Congli Sun,
Jingsheng Chen,
George Liontos,
Konstantinos Ntetsikas,
A. Avgeropoulos,
Paul M. Voyles,
Caroline A. Ross
Abstract:
Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Neel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbo…
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Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Neel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ~75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the domains along the nanowires. These narrow wires provide model system for exploring domain wall structure and dynamics in perpendicular anisotropy systems.
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Submitted 12 January, 2016;
originally announced January 2016.
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Quantitative measurement of density in a shear band of metallic glass monitored along its propagation direction
Authors:
Vitalij Schmidt,
Harald Rösner,
Martin Peterlechner,
Paul M. Voyles,
Gerhard Wilde
Abstract:
Quantitative density measurements from electron scattering show that shear bands in deformed Al_{88}Y_{7}Fe_{5} metallic glass exhibit alternating high and low density regions, ranging from -9 % to +6 % relative to the un-deformed matrix. Small deections of the shear band from the main propagation direction coincide with switches in density from higher to lower than the matrix and vice versa, indi…
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Quantitative density measurements from electron scattering show that shear bands in deformed Al_{88}Y_{7}Fe_{5} metallic glass exhibit alternating high and low density regions, ranging from -9 % to +6 % relative to the un-deformed matrix. Small deections of the shear band from the main propagation direction coincide with switches in density from higher to lower than the matrix and vice versa, indicating that faster and slower motion (stick-slip) occurs during the propagation. Nano-beam diffraction analyses provides clear evidence that the density changes are accompanied by structural changes suggesting that shear alters the packing of tightly-bound short- or medium-range atomic clusters. This bears a striking resemblance to the packing behavior in granular shear bands formed upon deformation of granular media.
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Submitted 9 December, 2015; v1 submitted 7 May, 2015;
originally announced May 2015.
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Nanoscale grains, high irreversibility field, and large critical current density as a function of high energy ball milling time in C-doped magnesium diboride
Authors:
B. J. Senkowicz,
R. J. Mungall,
Y. Zhu,
J. Jiang,
P. M. Voyles,
E. E. Hellstrom,
D. C. Larbalestier
Abstract:
Magnesium diboride (MgB2) powder was mechanically alloyed by high energy ball milling with C to a composition of Mg(B0.95C0.05)2 and then sintered at 1000 C in a hot isostatic press. Milling times varied from 1 minute to 3000 minutes. Full C incorporation required only 30-60 min of milling. Grain size of sintered samples decreased with increased milling time to less than 30 nm for 20-50 hrs of m…
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Magnesium diboride (MgB2) powder was mechanically alloyed by high energy ball milling with C to a composition of Mg(B0.95C0.05)2 and then sintered at 1000 C in a hot isostatic press. Milling times varied from 1 minute to 3000 minutes. Full C incorporation required only 30-60 min of milling. Grain size of sintered samples decreased with increased milling time to less than 30 nm for 20-50 hrs of milling. Milling had a weak detrimental effect on connectivity. Strong irreversibility field (H*) increase (from 13.3 T to 17.2 T at 4.2 K) due to increased milling time was observed and correlated linearly with inverse grain size (1/d). As a result, high field Jc benefited greatly from lengthy powder milling. Jc(8 T, 4.2 K) peaked at > 80,000 A/cm2 with 1200 min of milling compared with only ~ 26,000 A/cm2 for 60 min of milling. This non-compositional performance increase is attributed to grain refinement of the unsintered powder by milling, and to the probable suppression of grain growth by milling-induced MgO nano-dispersions.
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Submitted 12 December, 2007;
originally announced December 2007.