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Arbitrarily accurate representation of atomistic dynamics via Markov Renewal Processes
Authors:
Animesh Agarwal,
Sandrasegaram Gnanakaran,
Nicholas Hengartner,
Arthur F. Voter,
Danny Perez
Abstract:
Atomistic simulations with methods such as molecular dynamics are extremely powerful tools to understand nanoscale dynamical behavior. The resulting trajectories, by the virtue of being embedded in a high-dimensional configuration space, can however be difficult to analyze and interpret. This makes low-dimensional representations, especially in terms of discrete jump processes, extremely valuable.…
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Atomistic simulations with methods such as molecular dynamics are extremely powerful tools to understand nanoscale dynamical behavior. The resulting trajectories, by the virtue of being embedded in a high-dimensional configuration space, can however be difficult to analyze and interpret. This makes low-dimensional representations, especially in terms of discrete jump processes, extremely valuable. This simplicity however usually comes at the cost of accuracy, as tractable representations often entail simplifying assumptions that are not guaranteed to be realized in practice. In this paper, we describe a discretization scheme for continuous trajectories that enables an arbitrarily accurate representation in terms of a Markov Renewal Process over a discrete state space. The accuracy of the model converges exponentially fast as a function of a continuous parameter that has the interpretation of a local correlation time of the dynamics.
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Submitted 26 August, 2020;
originally announced August 2020.
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Evidence for percolation diffusion of cations and material recovery in disordered pyrochlore from accelerated molecular dynamics simulations
Authors:
Romain Perriot,
Blas P. Uberuaga,
Richard J. Zamora,
Danny Perez,
Arthur F. Voter
Abstract:
We used classical and accelerated molecular dynamics simulations to characterize vacancy-mediated diffusion of cations in Gd$_2$Ti$_2$O$_7$ pyrochlore as a function of the disorder on the microsecond timescale. We find that cation vacancy diffusion is slow in materials with low levels of disorder. However, higher levels of disorder allow for fast cation diffusion, which is then also accompanied by…
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We used classical and accelerated molecular dynamics simulations to characterize vacancy-mediated diffusion of cations in Gd$_2$Ti$_2$O$_7$ pyrochlore as a function of the disorder on the microsecond timescale. We find that cation vacancy diffusion is slow in materials with low levels of disorder. However, higher levels of disorder allow for fast cation diffusion, which is then also accompanied by fast antisite annihilation and ordering of the cations. The cation diffusivity is therefore not constant, but decreases as the material reorders. The results suggest that fast cation diffusion is triggered by the existence of a percolation network of antisites. This is in marked contrast with oxygen diffusion, which showed a smooth increase of the ionic diffusivity with increasing disorder in the same compound. The increase of the cation diffusivity with disorder is also contrary to observations from other complex oxides and disordered media models, suggesting a fundamentally different relation between disorder and mass transport. These results highlight the dynamic interplay between fast cation diffusion and the recovery of disorder and have important implications for understanding radiation damage evolution, sintering and aging, as well as diffusion in disorder oxides more generally.
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Submitted 24 July, 2016;
originally announced July 2016.
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Reflection and implantation of low energy helium with tungsten surfaces
Authors:
Valery Borovikov,
Arthur F. Voter,
Xian-Zhu Tang
Abstract:
Reflection and implantation of low energy helium (He) ions by tungsten (W) substrate are studied using molecular dynamics (MD) simulations. Motivated by the ITER divertor design, our study considers a range of W substrate temperatures (300 K, 1000 K, 1500 K), a range of He atom incidence energies ($\le$100 eV) and a range of angles of incidence ($0^{\circ}$-$75^{\circ}$) with respect to substrate…
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Reflection and implantation of low energy helium (He) ions by tungsten (W) substrate are studied using molecular dynamics (MD) simulations. Motivated by the ITER divertor design, our study considers a range of W substrate temperatures (300 K, 1000 K, 1500 K), a range of He atom incidence energies ($\le$100 eV) and a range of angles of incidence ($0^{\circ}$-$75^{\circ}$) with respect to substrate normal. The MD simulations quantify the reflection and implantation function, the integrated moments such as the particle/energy reflection coefficients and average implantation depths. Distributions of implantation depths, reflected energy, polar and azimuthal angles of reflection are obtained, as functions of simulation parameters, such as W substrate temperature, polar angle of incidence, the energy of incident He, and the type of W substrate surface. Comparison between the MD simulation results, the results obtained using SRIM simulation package, and the existing experimental and theoretical results is provided.
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Submitted 27 January, 2014; v1 submitted 9 January, 2014;
originally announced January 2014.
