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Sliding ferroelectricity in a bulk misfit layer compound (PbS)$_{1.18}$VS$_2$
Authors:
Cinthia Antunes Corrêa,
Jiří Volný,
Kateřina Tetalová,
Klára Uhlířová,
Václav Petříček,
Martin Vondráček,
Jan Honolka,
Tim Verhagen
Abstract:
Twisted heterostructures of two-dimensional crystals can create a moiré landscape, which can change the properties of it's parent crystals. However, the reproducibility of manual stacking is far from perfect. Here, the alternated stacking of post-transition metal monochalcogenides and transition metal dichalcogenides in misfit layer compound crystals is used as a moiré generator. Using X-ray diffr…
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Twisted heterostructures of two-dimensional crystals can create a moiré landscape, which can change the properties of it's parent crystals. However, the reproducibility of manual stacking is far from perfect. Here, the alternated stacking of post-transition metal monochalcogenides and transition metal dichalcogenides in misfit layer compound crystals is used as a moiré generator. Using X-ray diffraction, the presence of twins with a well-defined small twist angle between them is shown. Due to the twist, the surface electrical potential from the induced ferroelectricity is observed using scanning probe microscopy and electron microscopy.
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Submitted 26 June, 2023;
originally announced June 2023.
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Single crystal studies and electronic structure investigation of a room-temperature semiconductor NaMnAs
Authors:
J. Volny,
V. Holy,
K. Charvatova,
M. Veis,
M. Vondracek,
J. Honolka,
E. Duverger-Nedellec,
J. Schusser,
S. W. D'Souza,
J. Minar,
J. M. Pientka,
A. Marmodoro,
K. Vyborny,
K. Uhlirova
Abstract:
We report synthesis of single crystalline NaMnAs, confirm its antiferromagnetic order and characterise the sample by photoemission spectroscopy. The electronic structure was studied using optical transmittance, x-ray and ultraviolet spectroscopy and by theoretical modeling using local density approximation (LDA) extended to LDA+U when Heisenberg model parameters were determined. Optical transmitta…
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We report synthesis of single crystalline NaMnAs, confirm its antiferromagnetic order and characterise the sample by photoemission spectroscopy. The electronic structure was studied using optical transmittance, x-ray and ultraviolet spectroscopy and by theoretical modeling using local density approximation (LDA) extended to LDA+U when Heisenberg model parameters were determined. Optical transmittance measurement have confirmed the theoretical predictions that NaMnAs is a semiconductor. Also the Néel temperature was closer determined for the first time from temperature dependence of magnetization, in agreement with our Monte Carlo simulations.
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Submitted 7 September, 2021;
originally announced September 2021.
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Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold
Authors:
Matej Velicky,
Alvaro Rodriguez,
Milan Bousa,
Andrey V. Krayev,
Martin Vondracek,
Jan Honolka,
Mahdi Ahmadi,
Gavin E. Donnelly,
Fumin Huang,
Hector D. Abruna,
Kostya S. Novoselov,
Otakar Frank
Abstract:
Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution…
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Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge doping engineering of MoS2.
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Submitted 15 April, 2020;
originally announced April 2020.
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Step-edge assisted large scale FeSe monolayer growth on epitaxial Bi2Se3 thin films
Authors:
Jan Fikáček,
Vitalii Stetsovych,
Martin Vondráček,
Pavel Procházka,
Stanislav Průša,
Lukas Kormoš,
Jan Čechal,
Ondrej Caha,
Tomáš Skála,
Petru Vlaic,
Karel Carva,
Gunther Springholz,
Jan Honolka
Abstract:
The interest in Fe-chalcogenide unconventional superconductors is intense after the critical temperature of FeSe was reported enhanced by more than one order of magnitude in the monolayer limit at the interface to an insulating oxide substrate. In heterostructures comprising interfaces of FeSe with topological insulators, additional interesting physical phenomena is predicted to arise e.g. in form…
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The interest in Fe-chalcogenide unconventional superconductors is intense after the critical temperature of FeSe was reported enhanced by more than one order of magnitude in the monolayer limit at the interface to an insulating oxide substrate. In heterostructures comprising interfaces of FeSe with topological insulators, additional interesting physical phenomena is predicted to arise e.g. in form of {\it topological superconductivity}. So far superconductive properties of Fe-chalcogenide monolayers were mostly studied by local scanning tunneling spectroscopy experiments, which can detect pseudo-gaps in the density of states as an indicator for Cooper pairing. Direct macroscopic transport properties which can prove or falsify a superconducting phase were rarely reported due to the difficulty to grow films with homogeneous material properties. Here we report on a promising growth method to fabricate continuous carpets of monolayer thick FeSe on molecular beam epitaxy grown Bi$_2$Se$_3$ topological insulator thin films. In contrast to previous works using atomically flat cleaved bulk Bi$_2$Se$_3$ crystal surfaces we observe a strong influence of the high step-edge density (terrace width about 10~nm) on MBE-grown Bi$_2$Se$_3$ substrates, which significantly promotes the growth of coalescing FeSe domains with small tetragonal crystal distortion without compromising the underlying Bi$_2$Se$_3$ crystal structure.
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Submitted 31 December, 2019;
originally announced December 2019.
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Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy
Authors:
Saleem Ayaz Khan,
Martin Vondráček,
Peter Blaha,
Kateřina Horáková,
Jan Minár,
Ondřej Šipr,
Vladimír Cháb
Abstract:
The arrangement of B~atoms in a doped Si(111)-$(\sqrt{3}\times\sqrt{3})R30^{\circ}$:B system was studied using near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B~atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various stru…
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The arrangement of B~atoms in a doped Si(111)-$(\sqrt{3}\times\sqrt{3})R30^{\circ}$:B system was studied using near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B~atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab-initio total energy calculations. It is found that most of boron atoms are located in sub-surface L$_{1}^{c}$ positions, beneath a Si atom. However, depending on the preparation method a significant portion of B~atoms may be located elsewhere. A possible location of these non-L$_{1}^{c}$-atoms is at the surface, next to those Si atoms which form the $(\sqrt{3}\times\sqrt{3})R30^{\circ}$ reconstruction.
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Submitted 17 February, 2019;
originally announced February 2019.
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Electronic properties of Bi-doped GaAs(001) semiconductors
Authors:
Jan Honolka,
Conor D. Hogan,
Martin Vondracek,
Yaroslav Poliak,
Fabrizio Arciprete,
Ernesto Placidi
Abstract:
Despite its potential in the fields of optoelectronics and topological insulators, experimental electronic band structure studies of Bi-doped GaAs are scarce. The reason is the complexity of growth which tends to leave bulk and in particular surface properties in an undefined state. Here we present an in depth investigation of structural and electronic properties of GaAsBi epilayers grown by molec…
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Despite its potential in the fields of optoelectronics and topological insulators, experimental electronic band structure studies of Bi-doped GaAs are scarce. The reason is the complexity of growth which tends to leave bulk and in particular surface properties in an undefined state. Here we present an in depth investigation of structural and electronic properties of GaAsBi epilayers grown by molecular beam epitaxy with high (001) crystalline order and well-defined surface structures evident from low-energy electron diffraction. X-ray and ultraviolet photoemission spectrocopy as well as angle-resolved photoemission data at variable photon energies allows to disentangle a Bi-rich surface layer with $(1\times3)$ symmetry from the effects of Bi atoms incorporated in the GaAs bulk matrix. The influence of Bi concentrations up to $\approx 1$\% integrated in the GaAs bulk are visible in angle-resolved photoemission spectra after mild ion bombardment and subsequent annealing steps. Interpretation of our results is obtained via density functional theory simulations of bulk and $β2(2\times 4)$ reconstructed slab geometries with and without Bi. Bi-induced energy shifts in the dispersion of GaAs heavy and light hole bulk bands are evident both in experiment and theory, which are relevant for modulations in the optical band gap and thus optoelectronic applications.
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Submitted 21 June, 2018;
originally announced June 2018.
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Nanofaceting as a stamp for periodic graphene charge carrier modulations
Authors:
M. Vondracek,
M. Kucera,
L. Fekete,
J. Kopecek,
J. Lancok,
D. Kalita,
J. Coraux,
V. Bouchiat,
J. Honolka
Abstract:
The exceptional electronic properties of monoatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular twodimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrin…
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The exceptional electronic properties of monoatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular twodimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 10^13 carriers per cm^2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.
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Submitted 2 April, 2016;
originally announced April 2016.
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Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators
Authors:
M. Vondracek,
J. Honolka,
L. Cornils,
J. Warmuth,
L. Zhou,
A. Kamlapure,
A. A. Khajetoorians,
R. Wiesendanger,
J. Wiebe,
M. Michiardi,
M. Bianchi,
J. Miwa,
L. Barreto,
P. Hofmann,
C. Piamonteze,
J. Minar,
S. Mankovsky,
St. Borek,
H. Ebert,
M. Schueler,
T. Wehling,
J. -L. Mi,
B. -B. Iversen
Abstract:
We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially filled Ni 3d states of occupancy n_d = 9.2. On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculation…
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We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially filled Ni 3d states of occupancy n_d = 9.2. On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculations we are able to relate the element specific moment formation to a local Stoner criterion. While Fe adatoms form large spin moments of m_s = 2.54 mu_B with out-of-plane anisotropy due to a sufficiently large density of states at the Fermi energy, Ni remains well below an effective Stoner threshold for local moment formation. With the Fermi level remaining in the bulk band gap after adatom deposition, non-magnetic Ni and preferentially out-of-plane oriented magnetic Fe with similar structural properties on Bi2Te2Se surfaces constitute a perfect platform to study off-on effects of time-reversal symmetry breaking on topological surface states.
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Submitted 31 March, 2016;
originally announced March 2016.
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Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi$_2$Se$_3$/Mn-Bi$_2$Se$_3$) heterostructures
Authors:
M. Valiska,
J. Warmuth,
M. Michiardi,
M. Vondracek,
A. S. Ngankeu,
V. Holy,
V. Sechovsky,
G. Springholz,
M. Bianchi,
J. Wiebe,
P. Hofmann,
J. Honolka
Abstract:
Homojunctions between Bi$_2$Se$_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi$_2$Se$_3$ are grown ontop of Mn-doped Bi$_2$Se$_3$ by molecular beam epitaxy for $0\le n \le 30\,$QLs, allowing to unhamperedly monitor the development of electronic and topological pr…
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Homojunctions between Bi$_2$Se$_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi$_2$Se$_3$ are grown ontop of Mn-doped Bi$_2$Se$_3$ by molecular beam epitaxy for $0\le n \le 30\,$QLs, allowing to unhamperedly monitor the development of electronic and topological properties by surface sensitive techniques like angle resolved photoemission spectroscopy. With increasing $n$, a Mn-induced gap at the Dirac point is gradually filled in an "hourglass" fashion to reestablish a topological surface state at $n \sim 9\,$QLs. Our results suggest a competition of upwards and downwards band bending effects due to the presence of an n-p type interface, which can be used to tailor topological and quantum well states independently.
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Submitted 10 February, 2016;
originally announced February 2016.
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Silicene vs. ordered 2D silicide: the atomic and electronic structure of the Si-$(\sqrt{19}\times\sqrt{19})R23.4^{\circ}$/Pt(111) surface reconstruction
Authors:
Martin Svec,
Prokop Hapala,
Martin Ondracek,
Maria Blanco-Rey,
Pablo Merino,
Pingo Mutombo,
Martin Vondracek,
Yaroslav Polyak,
Vladimir Chab,
Jose Angel Martin Gago,
Pavel Jelinek
Abstract:
We discuss the possibility of a 2D ordered structure formed upon deposition of Si on metal surfaces. We investigate the atomic and electronic structure of the Si-$(\sqrt{19}\times\sqrt{19})R23.4^{\circ}$/Pt(111) surface reconstruction by means of a set of experimental surface-science techniques supported by theoretical calculations. The theory achieves a very good agreement with the experimental r…
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We discuss the possibility of a 2D ordered structure formed upon deposition of Si on metal surfaces. We investigate the atomic and electronic structure of the Si-$(\sqrt{19}\times\sqrt{19})R23.4^{\circ}$/Pt(111) surface reconstruction by means of a set of experimental surface-science techniques supported by theoretical calculations. The theory achieves a very good agreement with the experimental results and corroborate beyond any doubt that this phase is a surface alloy consisting of Si$_3$Pt tetramers that resembles a twisted Kagome lattice. These findings render unlikely any formation of silicene or germanene on Pt(111) and other transition metal surfaces.
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Submitted 14 June, 2014; v1 submitted 28 February, 2014;
originally announced February 2014.
