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Plasmons in two-dimensional electron systems with infinite and semi-infinite metal gratings
Authors:
A. V. Nikonov,
A. A. Zabolotnykh,
V. A. Volkov
Abstract:
We analytically investigate the plasmons propagating in a homogeneous two-dimensional (2D) electron system, along the metal grating in the form of a periodic array of strip-shaped electrodes (gates) in the vicinity of the 2D system. We show that in the case of semi-infinite grating, the Tamm plasmon modes localized near and propagating along the grating edge can exist in the gaps of the plasmonic…
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We analytically investigate the plasmons propagating in a homogeneous two-dimensional (2D) electron system, along the metal grating in the form of a periodic array of strip-shaped electrodes (gates) in the vicinity of the 2D system. We show that in the case of semi-infinite grating, the Tamm plasmon modes localized near and propagating along the grating edge can exist in the gaps of the plasmonic band structure provided that the last gate differs in width from the other gates. When the last gate is wider, the spectrum of the fundamental Tamm plasmon mode lies in the lowest frequency gap, below the first plasmonic band. Importantly, we find the mode to exist in this case only for finite values of the wave vector along the grating. Otherwise, if the width of the last gate is smaller, the Tamm plasmon modes occupy higher frequency gaps, and delocalized plasmons from the first frequency band become the lowest frequency excitations.
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Submitted 23 September, 2024; v1 submitted 18 June, 2024;
originally announced June 2024.
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Quasi-stationary near-gate plasmons in van der Waals heterostructures
Authors:
A. A. Zabolotnykh,
V. V. Enaldiev,
V. A. Volkov
Abstract:
Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der Waals heterostructures comprising a conducting layer separated by a thin insulator from an uncharged disk-shaped gate. We show that in these structure…
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Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der Waals heterostructures comprising a conducting layer separated by a thin insulator from an uncharged disk-shaped gate. We show that in these structures the near-gate plasmons form gate-size-quantized quasi-stationary discrete modes even in the collisionless limit. Belonging to continuum spectrum of two-dimensional plasmons outside of the disk-gate, the near-gate plasmons are manifested as Fano-like resonances in frequency and magnetodispersions of scattering cross-section of the former scattered off the region under the gate. This enables to recover spectrum of the near-gate plasmons in the van der Waals heterostructures using near-field imaging techniques.
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Submitted 2 December, 2021; v1 submitted 19 November, 2021;
originally announced November 2021.
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Electrically controllable cyclotron resonance
Authors:
A. A. Zabolotnykh,
V. A. Volkov
Abstract:
Cyclotron resonance (CR) is considered one of the fundamental phenomena in conducting systems. In this paper, we study CR in a gated two-dimensional (2D) electron system (ES). Namely, we analyze the absorption of electromagnetic radiation incident normal to the gated 2DES, where a standard dielectric substrate separates the 2D electron sheet and the metallic steering electrode ("gate"); the whole…
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Cyclotron resonance (CR) is considered one of the fundamental phenomena in conducting systems. In this paper, we study CR in a gated two-dimensional (2D) electron system (ES). Namely, we analyze the absorption of electromagnetic radiation incident normal to the gated 2DES, where a standard dielectric substrate separates the 2D electron sheet and the metallic steering electrode ("gate"); the whole system is placed in the perpendicular magnetic field. Our analysis reveals the redshift of the absorption peak frequency compared to the electron cyclotron frequency. The redshift appears in low-frequency regime, when the resonant frequency is much less than the frequency of Fabry-Perot modes in natural resonator "2D electron sheet - substrate - gate". Moreover, we find this shift to be dependent on the electron density of 2DES. Therefore, it can be controlled by varying the gate voltage. We predict that the shift can be large in realistic gated or back-gated 2DESs. The obtained controllability of CR in gated 2DES opens the door for exploring new physics and applications of this phenomenon.
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Submitted 5 March, 2021; v1 submitted 11 January, 2021;
originally announced January 2021.
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Plasmons and magnetoplasmons in partially bounded two-layer electron systems
Authors:
A. A. Zabolotnykh,
V. A. Volkov
Abstract:
We have analytically studied plasmons in an electron system comprised of two spatially separated layers -- an infinite two-dimensional electron system (2DES) and a 2D strip. Our analysis reveals the existence of plasmon modes that are localized near and propagate along the strip. These modes are characterized by the wave vector in the direction of the strip, as well as the number of charge density…
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We have analytically studied plasmons in an electron system comprised of two spatially separated layers -- an infinite two-dimensional electron system (2DES) and a 2D strip. Our analysis reveals the existence of plasmon modes that are localized near and propagate along the strip. These modes are characterized by the wave vector in the direction of the strip, as well as the number of charge density nodes, N, across the strip. In the long-wavelength limit, the fundamental mode N=0 is found to have gapless linear dispersion. When the external perpendicular magnetic field is applied, this mode remains gapless and exhibits peculiar magnetodispersion. We analyze the correlation between our findings and the previously established results on plasmons in gated and partially gated 2DESs.
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Submitted 13 October, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.
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Interaction of gated and ungated plasmons in two-dimensional electron systems
Authors:
A. A. Zabolotnykh,
V. A. Volkov
Abstract:
Unique properties of plasmons in two-dimensional electron systems (2DESs) have been studied for many years. Existing theoretical approaches allow for analytical study of the properties of ungated and gated plasmons in two fundamental, ideal cases - the 2DES in dielectric environment and under an infinite metallic gate, respectively. However, it is for the first time that we introduce an analytical…
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Unique properties of plasmons in two-dimensional electron systems (2DESs) have been studied for many years. Existing theoretical approaches allow for analytical study of the properties of ungated and gated plasmons in two fundamental, ideal cases - the 2DES in dielectric environment and under an infinite metallic gate, respectively. However, it is for the first time that we introduce an analytical theory of the interaction of gated and ungated plasmons in partly gated 2DES. Generally, a finitewidth gate is formed by a metallic strip placed over an infinite plane hosting 2D electrons. Our solution, in particular, describes the propagating plasmon modes with their charge density having N nodes under the gate. In this regard, a new mode with N = 0 has been found in addition to the gapped modes with N = 1, 2,..., previously derived from numerical calculations. Unexpectedly, this fundamental plasmon mode has been found to differ substantially from the rest. In fact, it is characterised by gapless square root dispersion and represents a hybrid of gated and ungated plasmons. In contrast to the higher modes, the currents and lateral fields of the fundamental mode are localized mainly to the outside area in the vicinity of the gate. Heretofore, such a 'near-gate plasmon' has never been considered.
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Submitted 10 April, 2019; v1 submitted 27 December, 2018;
originally announced December 2018.
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Effective Dresselhaus and Rashba spin-orbit interactions in narrow quantum wells
Authors:
Zh. A. Devizorova,
V. A. Volkov
Abstract:
Rashba and linear Dresselhaus interactions are believed to yield dominant contribution to the spin splitting of two-dimensional electrons in the quantum wells based on A$_3$B$_5$ compounds. We show that the interfacial spin-orbit interaction significantly renormalizes the value of the corresponding Rashba ($α_{SIA}$) and Dresselhaus ($α_{BIA}$) parameters. For this purpose, we solve the effective…
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Rashba and linear Dresselhaus interactions are believed to yield dominant contribution to the spin splitting of two-dimensional electrons in the quantum wells based on A$_3$B$_5$ compounds. We show that the interfacial spin-orbit interaction significantly renormalizes the value of the corresponding Rashba ($α_{SIA}$) and Dresselhaus ($α_{BIA}$) parameters. For this purpose, we solve the effective mass equation in a quantum well supplemented by the original boundary conditions on the atomically sharp interfaces and calculate the interfacial contributions to $α_{SIA}$ and $α_{BIA}$. Our results explain a considerable spread in the experimental data on spin-orbit parameters in GaAs/AlGaAs quantum wells. We also demonstrated that the non-equivalence of the interfaces leads to the anisotropy of the spin splitting even in quantum wells with zero average electric field.
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Submitted 9 March, 2018;
originally announced March 2018.
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Quantum Confinement and Heavy Surface States of Dirac Fermions in Bismuth (111) Films: an Analytical Approach
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is topologically non-trivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac fermions in Bi(111) films taking into account the new data. The theory relies on a new phenomenological momentum-dependent boundary condition for the effective…
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Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is topologically non-trivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac fermions in Bi(111) films taking into account the new data. The theory relies on a new phenomenological momentum-dependent boundary condition for the effective Dirac equation. The boundary condition is described by two real parameters that are expressed by a linear combination of the Dresselhaus and Rashba interface spin-orbit interaction parameters. In semi-infinite Bi(111), near $\overline{\rm M}$-point the surface states possess anisotropical parabolic dispersion with very heavy effective mass in $\overline{\rm Γ}-\overline{\rm M}$ direction order of ten free electron masses, and light effective mass in $\overline{\rm M}-\overline{\rm K}$ direction order of one hundredth of free electron mass. In Bi(111) films with equivalent surfaces, the surface states from top and bottom surfaces are not splitted. In such symmetric film with arbitrary thickness, bottom of the lowest quantum confinement subband in conduction band coincides with the bottom of bulk conduction band in $\overline{\rm M}$-point.
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Submitted 24 March, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
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Resonance Absorption of Terahertz Radiation in Nanoperforated Graphene
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
Recent measurements of the conductivity of nanoperforated graphene are interpreted in terms of edges states existing near the edge of each nanohole. The perimetric quantization of edge states should result in the formation of a quasi-equidistant ladder of quasistationary energy levels. Dirac fermions filling this ladder rotate about each nanohole in the direction determined by the valley index. It…
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Recent measurements of the conductivity of nanoperforated graphene are interpreted in terms of edges states existing near the edge of each nanohole. The perimetric quantization of edge states should result in the formation of a quasi-equidistant ladder of quasistationary energy levels. Dirac fermions filling this ladder rotate about each nanohole in the direction determined by the valley index. It is shown that the irradiation of this system by circularly polarized terahertz radiation leads to a resonance in absorption in one of the valleys. The magnitude of absorption at the resonance frequency can be controlled by means of gate voltage.
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Submitted 11 March, 2017;
originally announced March 2017.
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Surface States of a System of Dirac Fermions: A Minimal Model
Authors:
V. A. Volkov,
V. V. Enaldiev
Abstract:
A brief survey is given of theoretical works on surface states (SSs) in Dirac materials. Within the formalism of envelope wave functions and boundary conditions for these functions, a minimal model is formulated that analytically describes surface and edge states of various (topological and non-topological) types in several systems with Dirac fermions (DFs). The applicability conditions of this mo…
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A brief survey is given of theoretical works on surface states (SSs) in Dirac materials. Within the formalism of envelope wave functions and boundary conditions for these functions, a minimal model is formulated that analytically describes surface and edge states of various (topological and non-topological) types in several systems with Dirac fermions (DFs). The applicability conditions of this model are discussed.
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Submitted 9 March, 2017;
originally announced March 2017.
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Edge plasmon polaritons on a half-plane
Authors:
A. A. Zabolotnykh,
V. A. Volkov
Abstract:
The effect of electromagnetic retardation on the spectrum of edge plasmons in a semi-infinite two-dimensional electron system is considered. The problem is reduced to complicated integral equations for the potentials, which are solved upon a major simplification of the kernel. The spatial distribution of the potentials, charges, and currents is analyzed. It is shown that edge plasmon polaritons in…
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The effect of electromagnetic retardation on the spectrum of edge plasmons in a semi-infinite two-dimensional electron system is considered. The problem is reduced to complicated integral equations for the potentials, which are solved upon a major simplification of the kernel. The spatial distribution of the potentials, charges, and currents is analyzed. It is shown that edge plasmon polaritons in the high-conductivity two dimensional system are characterized by a high Q factor at all frequencies, including those lower than the inverse electron relaxation time.
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Submitted 15 December, 2016;
originally announced December 2016.
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Fermi arcs formation in Weyl semimetals: the key role of intervalley interaction
Authors:
Zh. A. Devizorova,
V. A. Volkov
Abstract:
We propose an analytical model describing Fermi arc surface states observed in the recent investigations of Weyl semimetals. The effective two-valley Hamiltonian is supplemented by the boundary conditions taking into account both the intravalley and intervalley interfacial interaction. We demonstrate that the latter is crucial for the formation of the surface states having the form consistent with…
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We propose an analytical model describing Fermi arc surface states observed in the recent investigations of Weyl semimetals. The effective two-valley Hamiltonian is supplemented by the boundary conditions taking into account both the intravalley and intervalley interfacial interaction. We demonstrate that the latter is crucial for the formation of the surface states having the form consistent with the experimental data. Depending on the magnitude and interplay between the intravalley and intervalley interactions, the Fermi arc connects two nearby or distant valleys. Moreover, the emergence of additional Fermi contours (closed curves not intersecting the Weil points) can be understood in the simplest four-valley approximation. These results open the opportunities for search of new effects in Weyl semimetals under the external fields.
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Submitted 26 February, 2017; v1 submitted 29 November, 2016;
originally announced November 2016.
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Undamped relativistic magnetoplasmons in lossy two-dimensional electron systems
Authors:
V. A. Volkov,
A. A. Zabolotnykh
Abstract:
We address electrodynamic effects in plasma oscillations of a lossy 2D electron system whose dc 2D conductivity is comparable to the speed of light. We argue that the perpendicular constant magnetic field B causes astonishing features of magnetoplasma dynamics. We show that plasmon-polariton spectra can be classified using a 'relativistic' phase diagram 2D conductivity divided by the speed of ligh…
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We address electrodynamic effects in plasma oscillations of a lossy 2D electron system whose dc 2D conductivity is comparable to the speed of light. We argue that the perpendicular constant magnetic field B causes astonishing features of magnetoplasma dynamics. We show that plasmon-polariton spectra can be classified using a 'relativistic' phase diagram 2D conductivity divided by the speed of light versus B. An extraordinarily low damping branch in magnetoplasmon-polariton spectra emerges at two phases of this diagram. Some magnetoplasmons at these phases are predicted to be undamped waves.
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Submitted 12 October, 2016; v1 submitted 2 May, 2016;
originally announced May 2016.
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Aharonov-Bohm oscillations caused by non-topological surface states in Dirac nanowires
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
One intriguing fingerprint of surface states in topological insulators is the Aharonov-Bohm effect in magnetoconductivity of nanowires. We show that surface states in nanowires of Dirac materials (bismuth, bismuth antimony, and lead tin chalcogenides) being in non-topological phase, exhibit the same effect as amendment to magnetoconductivity of the bulk states. We consider a simple model of a cyli…
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One intriguing fingerprint of surface states in topological insulators is the Aharonov-Bohm effect in magnetoconductivity of nanowires. We show that surface states in nanowires of Dirac materials (bismuth, bismuth antimony, and lead tin chalcogenides) being in non-topological phase, exhibit the same effect as amendment to magnetoconductivity of the bulk states. We consider a simple model of a cylindrical nanowire, which is described by the 3D Dirac equation with a general $T$-invariant boundary condition. The boundary condition is determined by a single phenomenological parameter whose sign defines topological-like and non-topological surface states. The non-topological surface states emerge outside the gap. In longitudinal magnetic field $B$ they lead to Aharonov-Bohm amendment for the density of states and correspondingly for conductivity of the nanowire. The phase of these magnetooscillations increases with $B$ from $π$ to $2π$.
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Submitted 9 March, 2017; v1 submitted 24 September, 2015;
originally announced September 2015.
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Transport of Massless Dirac Fermions in Non-topological Type Edge States
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties…
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There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.
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Submitted 4 March, 2015;
originally announced March 2015.
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Orbital Quantization in a System of Edge Dirac Fermions in Nanoperforated Graphene
Authors:
Yu. I. Latyshev,
A. P. Orlov,
A. V. Frolov,
V. A. Volkov,
I. V. Zagorodnev,
V. A. Skuratov,
Yu. V. Petrov,
O. F. Vyvenko,
D. Yu. Ivanov,
M. Konczykowski,
P. Monceau
Abstract:
The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO$_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in z…
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The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO$_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in zero magnetic field. These peaks are attributed to the passage of the Fermi level through an equidistant ladder of levels formed by orbitally quantized states of edge Dirac fermions rotating around each nanohole. The results are in agreement with the theory of edge states for massless Dirac fermions.
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Submitted 4 March, 2015;
originally announced March 2015.
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Interface Contributions to the Spin-Orbit Interaction Parameters of Electrons at the (001) GaAs/AlGaAs Interface
Authors:
Zh. A. Devizorova,
A. V. Shchepetilnikov,
Yu. A. Nefyodov,
V. A. Volkov,
I. V. Kukushkin
Abstract:
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to compensate (enhance) considerably the contribution of the bulk Dresselhaus (Bychkov-Rashba) mechanism. The theoretical approach is based on the solution of the…
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One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to compensate (enhance) considerably the contribution of the bulk Dresselhaus (Bychkov-Rashba) mechanism. The theoretical approach is based on the solution of the effective mass equation in a quasitriangular well supplemented by a new boundary condition at a high and atomically sharp heterobarrier. The model takes into account the spin-orbit interaction of electrons with both bulk and interfacial crystal potential having C$_{2v}$ symmetry, as well as the lack of inversion symmetry and nonparabolicity of the conduction band in GaAs. The effective 2D spin Hamiltonian including both bulk and interfacial contributions to the Dresselhaus ($α_{BIA}$) and Rashba ($α_{SIA}$) constants has been derived. The analytical relation between these constants and the components of the anisotropic nonlinear $g$-factor tensor in an oblique quantizing magnetic field has been found. The experimental approach is based, on one hand, on the detection of electron spin resonance in the microwave range and, on the other hand, on photoluminescence measurements of the nonparabolicity parameter. The interfacial contributions to $α_{BIA}$ and $α_{SIA}$ have been found from comparison with the theory.
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Submitted 9 October, 2014;
originally announced October 2014.
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Spin splitting of two dimensional states in the conduction band of asymmetric heterostructures: contribution from the atomically sharp interface
Authors:
Zh. A. Devizorova,
V. A. Volkov
Abstract:
The effect of an atomically sharp impenetrable interface on the spin splitting of the spectrum of two-dimensional electrons in heterostructures based on (001) III-V compounds has been analyzed. To this end, the single band Hamiltonian $Γ_{6c}$ for envelope functions is supplemented by a general boundary condition taking into account the possibility of the existence of Tamm states. This boundary co…
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The effect of an atomically sharp impenetrable interface on the spin splitting of the spectrum of two-dimensional electrons in heterostructures based on (001) III-V compounds has been analyzed. To this end, the single band Hamiltonian $Γ_{6c}$ for envelope functions is supplemented by a general boundary condition taking into account the possibility of the existence of Tamm states. This boundary condition also takes into account the spin-orbit interaction, the asymmetry of a quantum well, and the lack of inversion symmetry in the crystal and contains the single phenomenological length $R$ characterizing the structure of the interface at atomic scales. The model of a quasitriangular well created by the electric field $F$ has been considered. After the unitary transformation to zero boundary conditions, in the modified Hamiltonian interfacial contribution appears, from which the two-dimensional spin Hamiltonian is obtained through averaging over the fast motion along the normal. In the absence of magnetic field $\boldsymbol B$, this contribution is the sum of the Dresselhaus and the Bychkov-Rashba terms with the constants renormalized owing to the interfacial contribution. In the field $\boldsymbol B$ containing the quantizing component $B_z$, the off - diagonal (in cubic axes) components of the $g$-factor tensor are linear functions of $|B_z|$ and the number of the Landau level $N$. The results are in qualitative agreement with the experimental data.
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Submitted 9 October, 2014;
originally announced October 2014.
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Boundary Conditions and Surface States Spectra in Topological Insulators
Authors:
V. V. Enaldiev,
I. V. Zagorodnev,
V. A. Volkov
Abstract:
We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly de…
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We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly depend on both bulk Hamiltonian parameters and crystal potential behavior near the crystal surface. Space symmetry reduces the number of the boundary parameters to four real parameters in the 2D case and three in the 3D case. We found that the boundary parameters may strongly affect not only an energy spectrum but even the very existence of these states inside the bulk gap near the Brillouin zone center. Nevertheless, we reveal in frames of the tight-binding model that when surface states do not exist in the bulk gap in the Brillouin zone center they cross the gap in other points of the Brillouin zone in agreement with the bulk-boundary correspondence.
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Submitted 25 February, 2015; v1 submitted 3 July, 2014;
originally announced July 2014.
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Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from…
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Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from the magnetic edge states caused by skipping cyclotron orbits. The Tamm states result from breaking of periodic crystal potential at the edge, they can exist even at zero magnetic field and form a conducting band. Until recently those states have been observed in graphene only by local STM technique and there were no direct experiments on their contribution to transport measurements. Here we present the experiments on Aharonov-Bohm (AB) oscillations of resistance in a single-nanohole graphite and graphene structures, it indicates the presence of conducting edge states cycling around nanohole. An estimation show the penetration depth of the edge states to be as short as about 2 nm. The oscillations persist up to temperature T=115 K and the T-range of their existence increases with a decrease of the nanohole diameter. The proposed mechanism of the AB oscillations based on the resonant intervalley backscattering of the Dirac fermions by the nanohole via the Tamm states. The experimental results are consistent with such a scenario. Our findings show a way towards interference devices operating at high temperatures on the edge states in graphene
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Submitted 3 October, 2013;
originally announced October 2013.
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Quantum confinement, energy spectra and backscattering of Dirac fermions in quantum wire in magnetic field
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
We address the problems of an energy spectrum and backscattering of massive Dirac fermions confined in a cylindrical quantum wire. The Dirac fermions are described by the 3D Dirac equation supplemented by time-reversal-invariant boundary conditions at a surface of the wire. Even in zero magnetic field, spectra quantum-confined and surface states substantially depend on a boundary parameter a0. At…
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We address the problems of an energy spectrum and backscattering of massive Dirac fermions confined in a cylindrical quantum wire. The Dirac fermions are described by the 3D Dirac equation supplemented by time-reversal-invariant boundary conditions at a surface of the wire. Even in zero magnetic field, spectra quantum-confined and surface states substantially depend on a boundary parameter a0. At the wire surface with a0 > 0 (a0 < 0) the surface states form 1D massive subbands inside (outside) the bulk gap. The longitudinal magnetic field transforms the energy spectra. In the limit of the thick wires and the weak magnetic fields, the 1D massless surface subbands arise at half- integer number of magnetic flux quanta passing through the wire cross section. We reveal conditions when backscattering of the surface Dirac fermions by a non-magnetic impurity is suppressed. In addition, we calculate a conductance formed by the massless surface Dirac fermions in the magnetic field in collisional and ballistic regimes.
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Submitted 10 September, 2013;
originally announced September 2013.
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Bernstein modes and giant microwave response of two-dimensional electron system
Authors:
V. A. Volkov,
A. A. Zabolotnykh
Abstract:
We report on a new contribution to the microwave response of a two-dimensional electron system in magnetic field which originates from excitation of virtual Bernstein modes. These collective modes emerge as a result of interaction between usual magnetoplasmon mode and cyclotron resonance harmonics. The electrons are found to experience a strongly enhanced radiation field when its frequency falls i…
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We report on a new contribution to the microwave response of a two-dimensional electron system in magnetic field which originates from excitation of virtual Bernstein modes. These collective modes emerge as a result of interaction between usual magnetoplasmon mode and cyclotron resonance harmonics. The electrons are found to experience a strongly enhanced radiation field when its frequency falls in a gap of the Bernstein modes spectrum. This field can give rise to nonlinear effects, one of which, the parametric cyclotron resonance, is discussed. We argue that this resonance leads to a plasma instability in the ultraclean system. The instability-induced heating is responsible for the giant photoresistivity spike recently observed in the vicinity of the 2nd cyclotron resonance harmonic.
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Submitted 15 May, 2014; v1 submitted 6 May, 2013;
originally announced May 2013.
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Heat transfer in rapidly solidifying supercooled pure melt during final transient
Authors:
G. L. Buchbinder,
V. A. Volkov
Abstract:
The heat transfer model for a one-dimensional supercooled melt during the final stage of solidification is considered. The Stefan problem for the determination of the temperature distribution is solved under the condition that (i) the interface approaches the specimen surface with a constant velocity $V$; (ii) the latent heat of solidification linearly depends on the interface temperature; (iii) a…
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The heat transfer model for a one-dimensional supercooled melt during the final stage of solidification is considered. The Stefan problem for the determination of the temperature distribution is solved under the condition that (i) the interface approaches the specimen surface with a constant velocity $V$; (ii) the latent heat of solidification linearly depends on the interface temperature; (iii) all the physical quantities given at the phase boundary are presented by linear combinations of the exponential functions of the interface position. First we find the solution of the corresponding hyperbolic Stefan problem within the framework of which the heat transfer is described by the telegraph equation. The solution of the initial parabolic Stefan problem is then found as a result of the limiting transition $V/V_H \rightarrow 0$ $(V_H \rightarrow \infty)$, where $ V_H $ is the velocity of the propagation of the heat disturbances, in which the hyperbolic heat model teds to the parabolic one.
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Submitted 24 August, 2012;
originally announced August 2012.
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Conductivity magnetooscillations in 2D electron-impurity system under microwave irradiation: role of magnetoplasmons
Authors:
E. E. Takhtamirov,
V. A. Volkov
Abstract:
It is developed a many-electron approach to explain the recently observed conductivity magnetooscillations in very high mobility 2D electron systems under microwave irradiation. For the first time a theory takes into account the microwave-induced renormalization of the screened impurity potential. As a result this potential has singular, dynamic and non-linear in electric field nature. That chan…
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It is developed a many-electron approach to explain the recently observed conductivity magnetooscillations in very high mobility 2D electron systems under microwave irradiation. For the first time a theory takes into account the microwave-induced renormalization of the screened impurity potential. As a result this potential has singular, dynamic and non-linear in electric field nature. That changes the picture of scattering of electrons at impurities in a ``clean'' 2D system essentially: for appearence of the rectified dissipative current responsible are excitations of 2D magnetoplasmons rather than one-electron transitions between Landau levels. In a ``dirty'' 2D system the role of electron-electron interaction diminishes, so the collective excitations cease to exist, and our results turn into the well-known ones, which were obtained in the one-electron approach.
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Submitted 28 June, 2005;
originally announced June 2005.
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Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction
Authors:
D. Yu. Ivanov,
M. V. Chukalina,
E. G. Takhtamirov,
Yu. V. Dubrovskii,
L. Eaves,
V. A. Volkov,
E. E. Vdovin,
J. -C. Portal,
D. K. Maude,
M. Henini,
G. Hill
Abstract:
Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition…
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Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition $\hbarω_{LO}=m\hbarω_{C}$, where $m=1,2,3$. This renormalisation is attributed to formation of resonant magnetopolarons, i.e. mixing of high index Landau levels by strong interaction of electrons at Landau level states with LO-phonons.
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Submitted 13 January, 2005;
originally announced January 2005.
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Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition
Authors:
Yu. V. Dubrovskii,
V. A. Volkov,
L. Eaves,
E. E. Vdovin,
O. N. Makarovskii,
J. -C. Portal,
M. Henini,
G. Hill
Abstract:
Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic…
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Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T.
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Submitted 6 January, 2005; v1 submitted 5 January, 2005;
originally announced January 2005.
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Method of envelope functions and intervalley Γ-X_z interaction of states in (001) III-V semiconductor heterostructures
Authors:
E. E. Takhtamirov,
V. A. Volkov
Abstract:
The kp method is used to analyze the problem of intervalley Γ-X_z interaction of conduction band states in the (001) lattice-matched III-V semiconductor heterostructures. A convenient basis for expansion of the wave function is systematically selected and a multiband system of equations is derived for the envelope functions which is then reduced to a system of three equations for three valleys (…
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The kp method is used to analyze the problem of intervalley Γ-X_z interaction of conduction band states in the (001) lattice-matched III-V semiconductor heterostructures. A convenient basis for expansion of the wave function is systematically selected and a multiband system of equations is derived for the envelope functions which is then reduced to a system of three equations for three valleys (Γ_1, X_1, and X_3) by using a unitary transformation. Intervalley Γ-X_z mixing is described by short-range potentials localized at heterojunctions. The expressions for the parameters determining Γ-X_z mixing strength explicitly contain the chemical composition profile of the structure since mixing is naturally stronger for abrupt heterojunctions than for structures with a continuously varying chemical composition. It is shown that the direct Γ_1-X_1 interaction of comparable strength to Γ_1-X_3 interaction exists. This must be taken into account when interpreting tunnel and optical experiments since X_1 valley is substantially lower in energy than X_3 valley.
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Submitted 16 November, 2001;
originally announced November 2001.
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Generalization of the effective mass method for semiconductor structures with atomically sharp heterojunctions
Authors:
E. E. Takhtamirov,
V. A. Volkov
Abstract:
The Kohn-Luttinger envelope-function method is generalized to the case of heterostructures with atomically sharp heterojunctions based on lattice-matched layers of related semiconductors with zinc-blende symmetry. For electron states near the Γpoint in (001) heterostructures the single-band effective-mass equation is derived, taking into account both the spatial dependence of the effective mass…
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The Kohn-Luttinger envelope-function method is generalized to the case of heterostructures with atomically sharp heterojunctions based on lattice-matched layers of related semiconductors with zinc-blende symmetry. For electron states near the Γpoint in (001) heterostructures the single-band effective-mass equation is derived, taking into account both the spatial dependence of the effective mass and effects associated with the atomically sharp heterojunctions. A small parameter is identified, in powers of which it is possible to classify the various contributions to this equation. For hole states only the main contributions to the effective Hamiltonian, due to the sharpness of the heterojunctions, are taken into account. An expression is derived for the parameter governing mixing of states of heavy and light holes at the center of the 2D Brillouin zone.
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Submitted 24 October, 2001;
originally announced October 2001.
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Reduced symmetry of heterointerfaces and orientational pinning of quantum Hall stripe phase
Authors:
E. E. Takhtamirov,
V. A. Volkov
Abstract:
In a 2D electron system in (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which are recognized now to relate to the spontaneous formation of a charge density wave (``stripe phase''). Here we analyze one of the possible mechanisms of the stripe pinning along the crystallographic direction [110]--the native effective mass anisotropy of…
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In a 2D electron system in (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which are recognized now to relate to the spontaneous formation of a charge density wave (``stripe phase''). Here we analyze one of the possible mechanisms of the stripe pinning along the crystallographic direction [110]--the native effective mass anisotropy of 2D electrons. It is shown that for a symmetric quantum well this anisotropy is a linear function of applied perpendicular-to-plane electric field. So, if it is the anisotropy that defines the direction of the stripes, the critical in-plane magnetic field, when the stripes rotate, will strongly depend on the bias. The proper experiment will answer the question whether the native anisotropy of the effective mass is the mechanism of the pinning.
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Submitted 8 June, 2001;
originally announced June 2001.
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Orientational pinning of quantum Hall striped phase
Authors:
E. E. Takhtamirov,
V. A. Volkov
Abstract:
In ultra-clean 2D electron systems on (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which can be related to the spontaneous formation of a charge density wave (``striped phase''). We address to the following unsolved problem: what is the reason for stripe pinning along the crystallographic direction [110]? It is shown that in a sing…
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In ultra-clean 2D electron systems on (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which can be related to the spontaneous formation of a charge density wave (``striped phase''). We address to the following unsolved problem: what is the reason for stripe pinning along the crystallographic direction [110]? It is shown that in a single heterojunction (001) III-V the effective mass of 2D electrons is anisotropic. This natural anisotropy is due to the reduced (C_{2v}) symmetry of the heterojunction and, even being weak (0.1 percent), can govern the stripe direction. A magnetic field parallel to the interface induces ``magnetic'' anisotropy of the effective mass. The competition of these two types of anisotropy provides quantitative description of the experiment.
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Submitted 14 June, 2000;
originally announced June 2000.
