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Potential-inserted quantum well design for quantum cascade terahertz lasers
Authors:
R. Benchamekh,
J. -M. Jancu,
P. Voisin
Abstract:
We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight-binding calculations, and performances are compared to that of the classical three-well design. We obtain a 100% increase of the oscillator str…
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We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight-binding calculations, and performances are compared to that of the classical three-well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature-independent contrast between phonon-induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature.
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Submitted 14 November, 2016; v1 submitted 18 October, 2016;
originally announced October 2016.
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Spin splitting of electron states in lattice-mismatched (110)-oriented quantum wells
Authors:
M. O. Nestoklon,
S. A. Tarasenko,
R. Benchamekh,
P. Voisin
Abstract:
We show that for lattice-mismatched zinc-blende-type (110)-grown quantum wells a significant contribution to the zero-magnetic-field spin splitting of electron subbands comes from strain-induced spin-orbit coupling. Combining envelope function theory and atomistic tight-binding approach we calculate spin-orbit splitting constants for realistic quantum wells. It is found that the strain due to latt…
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We show that for lattice-mismatched zinc-blende-type (110)-grown quantum wells a significant contribution to the zero-magnetic-field spin splitting of electron subbands comes from strain-induced spin-orbit coupling. Combining envelope function theory and atomistic tight-binding approach we calculate spin-orbit splitting constants for realistic quantum wells. It is found that the strain due to lattice mismatch in conventional GaAs/AlGaAs structures may noticeably modify the spin splitting while in InGaAs/GaAs structures it plays a major role and may even change the sign of the spin splitting constant.
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Submitted 28 May, 2016;
originally announced May 2016.
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Tuning optical properties of Ge nanocrystals by Si shell
Authors:
M. O. Nestoklon,
A. N. Poddubny,
P. Voisin,
K. Dohnalova
Abstract:
We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to account for the electronic structure under strain on the atomistic level. We find that a Si shell as thick as 1 monolayer is enough to reduce the radiative reco…
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We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to account for the electronic structure under strain on the atomistic level. We find that a Si shell as thick as 1 monolayer is enough to reduce the radiative recombination rate as a result of valley $L - X$ cross-over. Thin Si shell leads to a dramatic reduction of the optical bandgap from visible to near-infrared range, which is promising for photovoltaics and photodetector applications. Our detailed analysis of the structure of the confined electron and hole states in real and reciprocal spaces indicates that the type-II heterostructure is not yet achieved for Si shells with the thickness below 0.8 nm, despite some earlier theoretical predictions. The energy levels of holes are affected by the Si shell stronger than the electron states, even though holes are completely confined to the Ge core. This occurs probably due to a strong influence of strain on the band offsets.
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Submitted 27 May, 2016;
originally announced May 2016.
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Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges
Authors:
F. Raouafi,
R. Samti,
R. Benchamekh,
R. Heyd,
S. Boyer-Richard,
P. Voisin,
J-M. Jancu
Abstract:
We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and intersubband transitions, based on the extended-basis sp3d5s* tight-binding model, is presented. The effect of insertion on the interband transitions is compared with exis…
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We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and intersubband transitions, based on the extended-basis sp3d5s* tight-binding model, is presented. The effect of insertion on the interband transitions is compared with existing experimental data. As for intersubband transitions, we show that in a GaAs/AlGaAs quantum well including two AlAs and one InAs insertions, a three level {e1 , e2 , e3 } system where the transition energy e3-e2 is lower and the transition energy e2-e1 larger than the longitudinal optical phonon energy (36 meV) can be engineered together with a e3-e2 transition energy widely tunable through the TeraHertz range.
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Submitted 14 March, 2016;
originally announced March 2016.
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Virtual crystal description of III-V semiconductor alloys in the tight binding approach
Authors:
M. O. Nestoklon,
R. Benchamekh,
P. Voisin
Abstract:
We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of…
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We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme opens a way for atomistic modeling of alloy-based opto-electronic devices without extensive supercell calculations.
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Submitted 10 March, 2016;
originally announced March 2016.
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Intrinsic interface states in InAs-AlSb heterostructures
Authors:
F. Raouafi,
R. Benchamekh,
M. O. Nestoklon,
J-M. Jancu,
P. Voisin
Abstract:
We examine the possibility of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs/AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended basis spds^* tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole like interfac…
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We examine the possibility of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs/AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended basis spds^* tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole like interface state bound to the plane of In-Sb bonds exists for a large range of values of the InSb/InAs band offset.
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Submitted 24 April, 2015; v1 submitted 24 November, 2014;
originally announced November 2014.
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Macroscopic Polarization Rotation Induced by a Single Spin
Authors:
Christophe Arnold,
Justin Demory,
Vivien Loo,
Aristide Lemaître,
Isabelle Sagnes,
Mikhaïl Glazov,
Olivier Krebs,
Paul Voisin,
Pascale Senellart,
Loïc Lanco
Abstract:
Solid-state spins hold many promises for quantum information processing. Entangling the polarization of a single photon to the state of a single spin would open new paradigms in quantum optics like delayed-photons entanglement, deterministic logic gates or fault-tolerant quantum computing. These perspectives rely on the possibility that a single spin induces a macroscopic rotation of a photon pola…
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Solid-state spins hold many promises for quantum information processing. Entangling the polarization of a single photon to the state of a single spin would open new paradigms in quantum optics like delayed-photons entanglement, deterministic logic gates or fault-tolerant quantum computing. These perspectives rely on the possibility that a single spin induces a macroscopic rotation of a photon polarization. Such polarization rotations induced by single spins were recently observed, yet limited to a few 10-3 degrees, due to poor spin-photon coupling. Here we report the amplification by three orders of magnitude of the spin-photon interaction, using a cavity quantum electrodynamics device. A single hole spin trapped in a semiconductor quantum dot is deterministically coupled to a micropillar cavity. The cavity-enhanced coupling between the incoming photons and the solid-state spin results in a polarization rotation by \pm 6 degrees when the spin is optically initialized in either the up or down state. These results open the way towards a spin-based quantum network.
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Submitted 24 November, 2014;
originally announced November 2014.
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Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
Authors:
M. O. Nestoklon,
O. Krebs,
R. Benchamekh,
P. Voisin
Abstract:
The properties of neutral acceptor states in zinc-blende semiconductors are re-examined in the frame of extended-basis $sp^3d^5s^*$ tight-binding model. The symmetry discrepancy between envelope function theory and atomistic calculations is explained in terms of over symmetric potential in current k$\cdot$p approaches. Spherical harmonics decomposition of microscopic Local Density Of States (LDOS)…
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The properties of neutral acceptor states in zinc-blende semiconductors are re-examined in the frame of extended-basis $sp^3d^5s^*$ tight-binding model. The symmetry discrepancy between envelope function theory and atomistic calculations is explained in terms of over symmetric potential in current k$\cdot$p approaches. Spherical harmonics decomposition of microscopic Local Density Of States (LDOS) allows for the direct analysis of the tight-binding results in terms of envelope function. Lifting of degeneracy by strain and electric field and their effect on LDOS is examined. The fine structure of magnetic impurity caused by exchange interaction of hole with impurity $d$-shell and its dependence on strain is studied. It is shown that exchange interaction by mixing heavy and light hole makes the ground state more isotropic. The results are important in the context of Scanning Tunneling Microscopy (STM) images of subsurface impurities.
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Submitted 16 May, 2014;
originally announced May 2014.
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Tight-binding calculations of image charge effects in colloidal nanoscale platelets of CdSe
Authors:
R. Benchamekh,
N. A. Gippius,
J. Even,
M. O. Nestoklon,
J. -M. Jancu,
S. Ithurria,
B. Dubertret,
Al. L. Efros,
P. Voisin
Abstract:
CdSe nanoplatelets show perfectly quantized thicknesses of few monolayers. They present a situation of extreme, yet well defined quantum confinement. Due to large dielectric contrast between the semiconductor and its ligand environment, interaction between carriers and their dielectric images strongly renormalize bare single particle states. We discuss the electronic properties of this original sy…
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CdSe nanoplatelets show perfectly quantized thicknesses of few monolayers. They present a situation of extreme, yet well defined quantum confinement. Due to large dielectric contrast between the semiconductor and its ligand environment, interaction between carriers and their dielectric images strongly renormalize bare single particle states. We discuss the electronic properties of this original system in an advanced tight-binding model, and show that Coulomb interactions, including self-energy corrections and enhanced electron-hole interaction, lead to exciton binding energies up to several hundred meVs.
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Submitted 21 November, 2013;
originally announced November 2013.
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Frequency cavity pulling induced by a single semiconductor quantum dot
Authors:
Daniel Valente,
Jan Suffczyński,
Tomasz Jakubczyk,
Adrien Dousse,
Aristide Lemaître,
Isabelle Sagnes,
Loïc Lanco,
Paul Voisin,
Alexia Auffeves,
Pascale Senellart
Abstract:
We investigate the emission properties of a single semiconductor quantum dot deterministically coupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening and narrowing of the cavity mode emission is evidenced when changing the spectral detuning between the emitter and the cavity. These features are theoretically accounted for by considering the phonon assisted emi…
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We investigate the emission properties of a single semiconductor quantum dot deterministically coupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening and narrowing of the cavity mode emission is evidenced when changing the spectral detuning between the emitter and the cavity. These features are theoretically accounted for by considering the phonon assisted emission of the quantum dot transition. These observations highlight a new situation for cavity quantum electrodynamics involving spectrally broad emitters.
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Submitted 23 July, 2013;
originally announced July 2013.
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Cavity-enhanced real-time monitoring of single charge jumps at the microsecond timescale
Authors:
Christophe Arnold,
Vivien Loo,
Aristide Lemaître,
Isabelle Sagnes,
Olivier Krebs,
Paul Voisin,
Pascale Senellart,
Loïc Lanco
Abstract:
We use fast coherent reflectivity measurements, in a strongly-coupled quantum dot-micropillar device, to monitor in real-time single-charge jumps at the microsecond timescale. Thanks to the strong enhancement of light-matter interaction inside the cavity, the measurement rate is five orders of magnitude faster than with previous experiments of direct single-charge sensing with quantum dots. The mo…
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We use fast coherent reflectivity measurements, in a strongly-coupled quantum dot-micropillar device, to monitor in real-time single-charge jumps at the microsecond timescale. Thanks to the strong enhancement of light-matter interaction inside the cavity, the measurement rate is five orders of magnitude faster than with previous experiments of direct single-charge sensing with quantum dots. The monitored transitions, identified at any given time with a less than 0.2% error probability, correspond to a carrier being captured and then released by a single material defect. This high-speed technique opens the way for the real-time monitoring of other rapid single quantum events, such as the quantum jumps of a single spin.
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Submitted 19 May, 2013;
originally announced May 2013.
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Microscopic Electronic Wavefunction and interactions between quasi particles in Empirical Tight-Binding Theory
Authors:
R. Benchamekh,
F. Raouafi,
J. Even,
F. Ben Cheikh Larbi,
P. Voisin,
J. -M. Jancu
Abstract:
A procedure to obtain single-electron wavefunctions within the tight-binding formalism is proposed. It is based on linear combinations of Slater-type orbitals whose screening coefficients are extracted from the optical matrix elements of the tight-binding Hamiltonian. Bloch functions obtained for zinc-blende semiconductors in the extended-basis spds* tight-binding model demonstrate very good agree…
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A procedure to obtain single-electron wavefunctions within the tight-binding formalism is proposed. It is based on linear combinations of Slater-type orbitals whose screening coefficients are extracted from the optical matrix elements of the tight-binding Hamiltonian. Bloch functions obtained for zinc-blende semiconductors in the extended-basis spds* tight-binding model demonstrate very good agreement with first-principles wavefunctions. We apply this method to the calculation of electron-hole exchange interaction, and obtain the dispersion of excitonic fine structure of bulk GaAs. Beyond semiconductor nanostructures, this work is a fundamental step toward modeling many-body effects from post-processing single particle wavefunctions within the tight-binding theory.
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Submitted 26 November, 2014; v1 submitted 29 March, 2013;
originally announced March 2013.
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Optical nonlinearity for few-photon pulses on a quantum dot-pillar cavity device
Authors:
Vivien Loo,
Christophe Arnold,
Olivier Gazzano,
Aristide Lemaitre,
Isabelle Sagnes,
Olivier Krebs,
Paul Voisin,
Pascale Senellart,
Loïc Lanco
Abstract:
Giant optical nonlinearity is observed under both continuous-wave and pulsed excitation in a deterministically-coupled quantum dot-micropillar system, in a pronounced strong-coupling regime. Using absolute reflectivity measurements we determine the critical intracavity photon number as well as the input and output coupling efficiencies of the device. Thanks to a near-unity input-coupling efficienc…
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Giant optical nonlinearity is observed under both continuous-wave and pulsed excitation in a deterministically-coupled quantum dot-micropillar system, in a pronounced strong-coupling regime. Using absolute reflectivity measurements we determine the critical intracavity photon number as well as the input and output coupling efficiencies of the device. Thanks to a near-unity input-coupling efficiency, we demonstrate a record nonlinearity threshold of only 8 incident photons per pulse. The output-coupling efficiency is found to strongly influence this nonlinearity threshold. We show how the fundamental limit of single-photon nonlinearity can be attained in realistic devices, which would provide an effective interaction between two coincident single photons.
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Submitted 3 August, 2012;
originally announced August 2012.
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Nuclear spin physics in quantum dots: an optical investigation
Authors:
Bernhard Urbaszek,
Xavier Marie,
Thierry Amand,
Olivier Krebs,
Paul Voisin,
Patrick Maletinsky,
Alexander Hogele,
Atac Imamoglu
Abstract:
The mesoscopic spin system formed by the 10E4-10E6 nuclear spins in a semiconductor quantum dot offers a unique setting for the study of many-body spin physics in the condensed matter. The dynamics of this system and its coupling to electron spins is fundamentally different from its bulk counter-part as well as that of atoms due to increased fluctuations that result from reduced dimensions. In rec…
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The mesoscopic spin system formed by the 10E4-10E6 nuclear spins in a semiconductor quantum dot offers a unique setting for the study of many-body spin physics in the condensed matter. The dynamics of this system and its coupling to electron spins is fundamentally different from its bulk counter-part as well as that of atoms due to increased fluctuations that result from reduced dimensions. In recent years, the interest in studying quantum dot nuclear spin systems and their coupling to confined electron spins has been fueled by its direct implication for possible applications of such systems in quantum information processing as well as by the fascinating nonlinear (quantum-)dynamics of the coupled electron-nuclear spin system. In this article, we review experimental work performed over the last decades in studying this mesoscopic,coupled electron-nuclear spin system and discuss how optical addressing of electron spins can be exploited to manipulate and read-out quantum dot nuclei. We discuss how such techniques have been applied in quantum dots to efficiently establish a non-zero mean nuclear spin polarization and, most recently, were used to reduce fluctuations of the average quantum dot nuclear spin orientation. Both results in turn have important implications for the preservation of electron spin coherence in quantum dots, which we discuss. We conclude by speculating how this recently gained understanding of the quantum dot nuclear spin system could in the future enable experimental observation of quantum-mechanical signatures or possible collective behavior of mesoscopic nuclear spin ensembles.
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Submitted 4 July, 2012; v1 submitted 21 February, 2012;
originally announced February 2012.
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Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach
Authors:
M. O. Nestoklon,
O. Krebs,
H. Jaffrès,
S. Ruttala,
J. -M. George,
J. -M. Jancu,
P. Voisin
Abstract:
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with t…
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Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.
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Submitted 6 January, 2012;
originally announced January 2012.
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Single-shot initialization of electron spin in a quantum dot using a short optical pulse
Authors:
Vivien Loo,
Loic Lanco,
Olivier Krebs,
Pascale Senellart,
Paul Voisin
Abstract:
We propose a technique to initialize an electron spin in a semiconductor quantum dot with a single short optical pulse. It relies on the fast depletion of the initial spin state followed by a preferential, Purcell-accelerated desexcitation towards the desired state thanks to a micropillar cavity. We theoretically discuss the limits on initialization rate and fidelity, and derive the pulse area for…
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We propose a technique to initialize an electron spin in a semiconductor quantum dot with a single short optical pulse. It relies on the fast depletion of the initial spin state followed by a preferential, Purcell-accelerated desexcitation towards the desired state thanks to a micropillar cavity. We theoretically discuss the limits on initialization rate and fidelity, and derive the pulse area for optimal initialization. We show that spin initialization is possible using a single optical pulse down to a few tens of picoseconds wide.
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Submitted 4 November, 2010;
originally announced November 2010.
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Quantum dot-cavity strong-coupling regime measured through coherent reflection spectroscopy in a very high-Q micropillar
Authors:
Vivien Loo,
Loic Lanco,
Aristide Lemaitre,
Isabelle Sagnes,
Olivier Krebs,
Paul Voisin,
Pascale Senellart
Abstract:
We report on the coherent reflection spectroscopy of a high-quality factor micropillar, in the strong coupling regime with a single InGaAs annealed quantum dot. The absolute reflectivity measurement is used to study the characteristics of our device at low and high excitation power. The strong coupling is obtained with a g=16 \mueV coupling strength in a 7.3\mum diameter micropillar, with a cavity…
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We report on the coherent reflection spectroscopy of a high-quality factor micropillar, in the strong coupling regime with a single InGaAs annealed quantum dot. The absolute reflectivity measurement is used to study the characteristics of our device at low and high excitation power. The strong coupling is obtained with a g=16 \mueV coupling strength in a 7.3\mum diameter micropillar, with a cavity spectral width kappa=20.5 \mueV (Q=65 000). The factor of merit of the strong-coupling regime, 4g/kappa=3, is the current state-of-the-art for a quantum dot-micropillar system.
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Submitted 4 November, 2010;
originally announced November 2010.
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Anomalous Hanle Effect in Quantum Dots : Evidence for Strong Dynamical Nuclear Polarization in Transverse Magnetic Field
Authors:
O. Krebs,
P. Maletinsky,
T. Amand,
B. Urbaszek,
A. Lemaître,
P. Voisin,
X. Marie,
A. Imamoglu
Abstract:
Hanle effect is ubiquitous in the study of spin-related phenomena and has been used to determine spin lifetime, precession and transport in semiconductors. Here, we report an experimental observation of anomalous Hanle effect in individual self-assembled InAs/GaAs quantum dots where we find that a sizeable photo-created electron spin polarization can be maintained in transverse fields as high as…
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Hanle effect is ubiquitous in the study of spin-related phenomena and has been used to determine spin lifetime, precession and transport in semiconductors. Here, we report an experimental observation of anomalous Hanle effect in individual self-assembled InAs/GaAs quantum dots where we find that a sizeable photo-created electron spin polarization can be maintained in transverse fields as high as 1T until it abruptly collapses. The striking broadening of the Hanle curve by a factor of ~20 and its bistability upon reversal of the magnetic sweep direction points to a novel dynamical nuclear spin polarization mechanism where the effective nuclear magnetic field compensates the transverse applied field. This interpretation is further supported by the measurement of actual electron Zeeman splitting which exhibits an abrupt increase at the Hanle curve collapse. Strong inhomogeneous quadrupolar interactions typical for strained quantum dots are likely to play a key role in polarizing nuclear spins perpendicular to the optically injected spin orientation.
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Submitted 9 October, 2009;
originally announced October 2009.
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Hyperfine interaction in InAs/GaAs self-assembled quantum dots : dynamical nuclear polarization versus spin relaxation
Authors:
O. Krebs,
B. Eble,
A. Lemaître,
P. Voisin,
B. Urbaszek,
X. Marie,
T. Amand
Abstract:
We report on the influence of hyperfine interaction on the optical orientation of singly charged excitons X+ and X- in self-assembled InAs/GaAs quantum dots. All measurements were carried out on individual quantum dots studied by micro-photoluminescence at low temperature. We show that the hyperfine interaction leads to an effective partial spin relaxation, under 50kHz modulated excitation polar…
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We report on the influence of hyperfine interaction on the optical orientation of singly charged excitons X+ and X- in self-assembled InAs/GaAs quantum dots. All measurements were carried out on individual quantum dots studied by micro-photoluminescence at low temperature. We show that the hyperfine interaction leads to an effective partial spin relaxation, under 50kHz modulated excitation polarization, which becomes however strongly inhibited under steady optical pumping conditions because of dynamical nuclear polarization. This optically created magnetic-like nuclear field can become very strong (up to ~4 T) when it is generated in the direction opposite to a longitudinally applied field, and exhibits then a bistability regime. This effect is very well described by a theoretical model derived in a perturbative approach, which reveals the key role played by the energy cost of an electron spin flip in the total magnetic field. Eventually, we emphasize the similarities and differences between X+ and X- trions with respect to the hyperfine interaction, which turn out to be in perfect agreement with the theoretical description.
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Submitted 9 April, 2009;
originally announced April 2009.
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Origin of the emission within the cavity mode of coupled quantum dot-cavity systems
Authors:
J. Suffczynski,
A. Dousse,
K. Gauthron,
A. Lemaitre,
I. Sagnes,
L. Lanco,
P. Voisin,
J. Bloch,
P. Senellart
Abstract:
The origin of the emission within the optical mode of a coupled quantum dot-micropillar system is investigated. Time-resolved photoluminescence is performed on a large number of deterministically coupled devices in a wide range of temperature and detuning. The emission within the cavity mode is found to exhibit the same dynamics as the spectrally closest quantum dot state. Our observations indic…
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The origin of the emission within the optical mode of a coupled quantum dot-micropillar system is investigated. Time-resolved photoluminescence is performed on a large number of deterministically coupled devices in a wide range of temperature and detuning. The emission within the cavity mode is found to exhibit the same dynamics as the spectrally closest quantum dot state. Our observations indicate that fast dephasing of the quantum dot state is responsible for the emission within the cavity mode. An explanation for recent photon correlation measurements reported on similar systems is proposed.
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Submitted 1 April, 2009;
originally announced April 2009.
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Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots
Authors:
K. Kowalik,
O. Krebs,
A. Lemaître,
J. A. Gaj,
P. Voisin
Abstract:
We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to define the initial spin polarization of neutral excitons. The conservation of the linear polarization generated along the bright exciton eigenaxes of up to 90%…
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We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to define the initial spin polarization of neutral excitons. The conservation of the linear polarization generated along the bright exciton eigenaxes of up to 90% and the conversion from circular- to linear polarization of up to 47% both demonstrate a very long spin relaxation time with respect to the radiative lifetime. Results are quantitatively compared with a model of pseudo-spin 1/2 including heavy-to-light hole mixing.
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Submitted 3 January, 2008;
originally announced January 2008.
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Electric field effect on electron spin splitting in SiGe/Si quantum wells
Authors:
M. O. Nestoklon,
E. L. Ivchenko,
J. -M. Jancu,
P. Voisin
Abstract:
Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings oscillate as a function of the QW width due to inter-valley reflection of the electron wave off the interfaces. In accordance with the symmetry considerations…
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Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings oscillate as a function of the QW width due to inter-valley reflection of the electron wave off the interfaces. In accordance with the symmetry considerations additional electric-field-induced terms appear in the electron spin-dependent Hamiltonian. The oscillations of splitting are suppressed in rather low electric fields. The tight-binding calculations have been analyzed by using the envelope function approach extended to asymmetrical QWs.
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Submitted 21 December, 2007; v1 submitted 12 December, 2007;
originally announced December 2007.
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Optically probing the fine structure of a single Mn atom in an InAs quantum dot
Authors:
A. Kudelski,
A. Lemaître,
A. Miard,
P. Voisin,
T. C. M. Graham,
R. J. Warburton,
O. Krebs
Abstract:
We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A^0 whose effective spin J=1 is significantly perturbed by the QD potential and its associated strain field. The spin interaction with photo-carriers injected in the quantum dot…
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We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A^0 whose effective spin J=1 is significantly perturbed by the QD potential and its associated strain field. The spin interaction with photo-carriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of micro-eV, but vanishingly small for electrons.
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Submitted 29 October, 2007;
originally announced October 2007.
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Efficient dynamical nuclear polarization in quantum dots: Temperature dependence
Authors:
B. Urbaszek,
P. -F. Braun,
X. Marie,
O. Krebs,
A. Lemaitre,
P. Voisin,
T. Amand
Abstract:
We investigate in micro-photoluminescence experiments the dynamical nuclear polarization in individual InGaAs quantum dots. Experiments carried out in an applied magnetic field of 2T show that the nuclear polarization achieved through the optical pumping of electron spins is increasing with the sample temperature between 2K and 55K, reaching a maximum of about 50%. Analysing the dependence of th…
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We investigate in micro-photoluminescence experiments the dynamical nuclear polarization in individual InGaAs quantum dots. Experiments carried out in an applied magnetic field of 2T show that the nuclear polarization achieved through the optical pumping of electron spins is increasing with the sample temperature between 2K and 55K, reaching a maximum of about 50%. Analysing the dependence of the Overhauser shift on the spin polarization of the optically injected electron as a function of temperature enables us to identify the main reasons for this increase.
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Submitted 3 July, 2007;
originally announced July 2007.
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Tetragonal and trigonal deformations in zinc-blende semiconductors : a tight-binding point of view
Authors:
J. -M. Jancu,
P. Voisin
Abstract:
The deformation potentials of cubic semiconductors are re-examined from the point of view of the extended-basis $sp^3d^5s^*$ tight-binding model. Previous parametrizations had failed to account properly for trigonal deformations, even leading to incorrect sign of the acoustic component of the shear deformation potential {\it d}. The strain-induced shifts and splittings of the on-site energies of…
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The deformation potentials of cubic semiconductors are re-examined from the point of view of the extended-basis $sp^3d^5s^*$ tight-binding model. Previous parametrizations had failed to account properly for trigonal deformations, even leading to incorrect sign of the acoustic component of the shear deformation potential {\it d}. The strain-induced shifts and splittings of the on-site energies of the p- and d-orbitals are shown to play a prominent role in obtaining satisfactory values of deformation potentials both at the zone center and zone extrema. The present approach results in excellent agreement with available experimental data and ab-initio calculations.
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Submitted 1 March, 2007;
originally announced March 2007.
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Electron spin quantum beats in positively charged quantum dots: nuclear field effects
Authors:
L. Lombez,
P. -F. Braun,
X. Marie,
P. Renucci,
B. Urbaszek,
T. Amand,
O. Krebs,
P. Voisin
Abstract:
We have studied the electron spin coherence in an ensemble of positively charged InAs/GaAs quantum dots. In a transverse magnetic field, we show that two main contributions must be taken into account to explain the damping of the circular polarization oscillations. The first one is due to the nuclear field fluctuations from dot to dot experienced by the electron spin. The second one is due to th…
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We have studied the electron spin coherence in an ensemble of positively charged InAs/GaAs quantum dots. In a transverse magnetic field, we show that two main contributions must be taken into account to explain the damping of the circular polarization oscillations. The first one is due to the nuclear field fluctuations from dot to dot experienced by the electron spin. The second one is due to the dispersion of the transverse electron Lande g-factor, due to the inherent inhomogeneity of the system, and leads to a field dependent contribution to the damping. We have developed a model taking into account both contributions, which is in good agreement with the experimental data. This enables us to extract the pure contribution to dephasing due to the nuclei.
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Submitted 12 April, 2007; v1 submitted 12 January, 2007;
originally announced January 2007.
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Manipulating the exciton fine structure of single CdTe/ZnTe quantum dots by an in-plane magnetic field
Authors:
K. Kowalik,
O. Krebs,
A. Golnik,
J. Suffczynski,
P. Wojnar,
J. Kossut,
J. A. Gaj,
P. Voisin
Abstract:
Polarization resolved photoluminescence (PL) spectroscopy of individual CdTe/ZnTe quantum dots is investigated in the presence of external in-plane magnetic field. We find that the excitonic fine structure strongly depends on the magnitude and direction of applied field. The splitting between "bright" and "dark" states increases with the magnetic field, whereas the anisotropic exchange splitting…
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Polarization resolved photoluminescence (PL) spectroscopy of individual CdTe/ZnTe quantum dots is investigated in the presence of external in-plane magnetic field. We find that the excitonic fine structure strongly depends on the magnitude and direction of applied field. The splitting between "bright" and "dark" states increases with the magnetic field, whereas the anisotropic exchange splitting of the bright excitons can be reduced or enhanced, depending on the field direction. Increase (decrease) is observed when the field is applied parallel to the PL polarization direction of the lower (upper) energy exciton. For intermediate fields, we observe a rotation of the PL polarization orientation. The results are discussed in terms of an effective spin Hamiltonian derived for the exciton ground state.
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Submitted 11 October, 2006;
originally announced October 2006.
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Bistability of the Nuclear Polarisation created through optical pumping in InGaAs Quantum Dots
Authors:
P. -F. Braun,
B. Urbaszek,
T. Amand,
X. Marie,
O. Krebs,
B. Eble,
A. Lemaitre,
P. Voisin
Abstract:
We show that optical pumping of electron spins in individual InGaAs quantum dots leads to strong nuclear polarisation that we measure via the Overhauser shift (OHS) in magneto-photoluminescence experiments between 0 and 4T. We find a strongly non-monotonous dependence of the OHS on the applied magnetic field, with a maximum nuclear polarisation of 40% for intermediate magnetic fields. We observe…
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We show that optical pumping of electron spins in individual InGaAs quantum dots leads to strong nuclear polarisation that we measure via the Overhauser shift (OHS) in magneto-photoluminescence experiments between 0 and 4T. We find a strongly non-monotonous dependence of the OHS on the applied magnetic field, with a maximum nuclear polarisation of 40% for intermediate magnetic fields. We observe that the OHS is larger for nuclear fields anti-parallel to the external field than in the parallel configuration. A bistability in the dependence of the OHS on the spin polarization of the optically injected electrons is found. All our findings are qualitatively understood with a model based on a simple perturbative approach.
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Submitted 13 October, 2006; v1 submitted 27 July, 2006;
originally announced July 2006.
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Dynamic nuclear polarization of a single charge-tunable InAs/GaAs quantum dot
Authors:
Benoît Eble,
Olivier Krebs,
Aristide Lemaître,
Katarzyna Kowalik,
Arkadiusz Kudelski,
Paul Voisin,
Bernhard Urbaszek,
Xavier Marie,
Thierry Amand
Abstract:
We report on the dynamic nuclear polarization of a single charge-tunable self-assembled InAs/GaAs quantum dot in a longitudinal magnetic field of $\sim$0.2T. The hyperfine interaction between the optically oriented electron and nuclei spins leads to the polarization of the quantum dot nuclei measured by the Overhauser-shift of the singly-charged excitons ($X^{+}$ and $X^{-}$). When going from…
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We report on the dynamic nuclear polarization of a single charge-tunable self-assembled InAs/GaAs quantum dot in a longitudinal magnetic field of $\sim$0.2T. The hyperfine interaction between the optically oriented electron and nuclei spins leads to the polarization of the quantum dot nuclei measured by the Overhauser-shift of the singly-charged excitons ($X^{+}$ and $X^{-}$). When going from $X^{+}$ to $X^{-}$, we observe a reversal of this shift which reflects the average electron spin optically written down in the quantum dot either in the $X^{+}$ state or in the final state of $X^{-}$ recombination. We discuss a theoretical model which indicates an efficient depolarization mechanism for the nuclei limiting their polarization to ~10%.
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Submitted 23 September, 2005; v1 submitted 11 August, 2005;
originally announced August 2005.
