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Illuminating trap density trends in amorphous oxide semiconductors with ultrabroadband photoconduction
Authors:
George W. Mattson,
Kyle T. Vogt,
John F. Wager,
Matt W. Graham
Abstract:
Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnO$_x$ (a-IGZO), UBPC identifies seven oxygen-deep donor vacancy peaks that are independently confirmed by energetically matchin…
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Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnO$_x$ (a-IGZO), UBPC identifies seven oxygen-deep donor vacancy peaks that are independently confirmed by energetically matching to photoluminescence emission peaks. The sub-gap DoS from 15 different types of a-IGZO TFTs all yield similar DoS, except only back-channel etch TFTs can have a deep acceptor peak seen at 2.2 eV below the conduction band mobility edge. This deep acceptor is likely a zinc vacancy, evidenced by trap density which becomes 5-6x larger when TFT wet-etch methods are employed. Certain DoS peaks are strongly enhanced for TFTs with active channel processing damage caused by plasma exposure. While Ar implantation and He plasma processing damage are similar, Ar plasma yields more disorder showing a 2x larger valence-band Urbach energy and two orders of magnitude increase in the deep oxygen vacancy trap density. Changing the growth conditions of a-IGZO also impacts the DoS, with zinc-rich TFTs showing much poorer electrical performance compared to 1:1:1 molar ratio a-IGZO TFTs owing to the former having a ~10xlarger oxygen vacancy trap density. Finally, hydrogen is found to behave as a donor in amorphous indium tin gallium zinc oxide TFTs.
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Submitted 19 January, 2023;
originally announced January 2023.
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Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors
Authors:
George W. Mattson,
Kyle T. Vogt,
John F. Wager,
Matt W. Graham
Abstract:
Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorporation into the channel layer of a top-gate a-IGZO TFT exists as an electron donor that causes an observed negative shift in the drain current-gate vo…
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Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorporation into the channel layer of a top-gate a-IGZO TFT exists as an electron donor that causes an observed negative shift in the drain current-gate voltage ($\mathrm{I_{D} - V_{G}}$) transfer curve turn-on voltage. Normally, hydrogen is thought to create shallow electronic states just below the conduction band mobility edge, with the donor ionization state controlled by equilibrium thermodynamics involving the position of the Fermi level with respect to the donor ionization energy. However, hydrogen does not behave as a normal donor as revealed by the subgap density of states (DoS) measured by the photoconduction response of top-gate a-IGZO TFTs to within 0.3 eV of the CBM edge. Specifically, the DoS shows a subgap peak above the valence band mobility edge growing at the same rate that $\mathrm{I_{D} - V_{G}}$ transfer curve measurements suggest that hydrogen was incorporated into the channel layer. Such hydrogen donor behavior in a-IGZO is anomalous and can be understood as follows: Non-bonded hydrogen ionization precedes its incorporation into the a-IGZO network as a bonded species. Ionized hydrogen bonds to a charged oxygen-on-an-oxygen-site anion, resulting in the formation of a defect complex denoted herein as, $\mathrm{{[{O_{O}^{2-}}{H^+}]}^{1-}}$. Formation of an $\mathrm{{[{O_{O}^{2-}}{H^+}]}^{1-}}$ defect complex creates a spectrally-broad ($\sim$0.3 eV FWHM) distribution of electronic states observed in the bandgap centered at 0.4 eV above the valence band mobility edge.
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Submitted 16 November, 2021;
originally announced November 2021.
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Ultrafast photocurrent and absorption microscopy of few-layer TMD devices isolate rate-limiting dynamics driving fast and efficient photoresponse
Authors:
Kyle T. Vogt,
Su-Fei Shi,
Feng Wang,
Matt W. Graham
Abstract:
Despite inherently poor interlayer conductivity, photodetectors made from few-layer devices of 2D transition metal dichalcogenides (TMDs) such as WSe$_2$ and MoS$_2$ can still yield a desirably fast ($\leq$90 ps) and efficient ($ε$$>$40\%) photoresponse. By combining ultrafast photocurrent (U-PC) and transient absorption (TA) microscopy, the competing electronic escape and recombination rates are…
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Despite inherently poor interlayer conductivity, photodetectors made from few-layer devices of 2D transition metal dichalcogenides (TMDs) such as WSe$_2$ and MoS$_2$ can still yield a desirably fast ($\leq$90 ps) and efficient ($ε$$>$40\%) photoresponse. By combining ultrafast photocurrent (U-PC) and transient absorption (TA) microscopy, the competing electronic escape and recombination rates are unambiguously identified in otherwise complex kinetics. Both the U-PC and TA response of WSe$_2$ yield matching interlayer electronic escape times that accelerate from 1.6 ns to 86 ns with applied $E$-field to predict the maximum device PC-efficiency realized of $\sim$44\%. The slope of the escape rates versus $E$-field suggests out-of-plane electron and hole mobilities of 0.129 and 0.031 cm$^2$/V$s$ respectively. Above $\sim$10$^{11}$ photons/cm$^{2}$ incident flux, defect-assisted Auger scattering greatly decreases efficiency by trapping carriers at vacancy defects. Both TA and PC spectra identify a metal-vacancy sub-gap peak with $\sim$5.6 ns lifetime as a primary trap capturing carriers as they hop between layers. Synchronous TA and U-PC microscopy show the\ net PC collected is modelled by a kinetic rate-law of electronic escape competing against the linear and nonlinear Auger recombination rates. This simple rate-model further predicts the PC-based dynamics, nonlinear amplitude and efficiency, $ε$ over a 10$^5$ range of incident photon flux in few-layer WSe$_2$ and MoS$_2$ devices.
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Submitted 30 March, 2020;
originally announced March 2020.
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Ultrabroadband Density of States of Amorphous In-Ga-Zn-O
Authors:
Kyle T. Vogt,
Christopher E. Malmberg,
Jacob C. Buchanan,
George W. Mattson,
G. Mirek Brandt,
Dylan B. Fast,
Paul H. -Y. Cheong,
John F. Wager,
Matt W. Graham
Abstract:
The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both…
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The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both near the conduction band and deep in the sub-gap, with peak densities of $10^{17}-10^{18}$ cm$^{-3}$eV$^{-1}$. Two deep acceptor-like metal vacancy peaks with peak densities in the range of $10^{18}$ cm$^{-3}$eV$^{-1}$ and lie adjacent to the valance band Urbach tail region at 2.0 to 2.5 eV below the conduction band edge. By applying detailed charge balance, we show increasing the density of metal vacancy deep-acceptors strongly shifts the $a$-IGZO TFT threshold voltage to more positive values. Photoionization (h$ν$ > 2.0 eV) of metal vacancy acceptors is one cause of transfer curve hysteresis in $a$-IGZO TFTs owing to longer recombination lifetimes as they get captured into acceptor-like vacancies.
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Submitted 3 July, 2020; v1 submitted 14 October, 2019;
originally announced October 2019.
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Mode conversion by symmetry breaking of propagating spin waves
Authors:
P. Clausen,
K. Vogt,
H. Schultheiss,
S. Schäfer,
B. Obry,
G. Wolf,
P. Pirro,
B. Leven,
B. Hillebrands
Abstract:
We study spin-wave transport in a microstructured Ni81Fe19 waveguide exhibiting broken translational symmetry. We observe the conversion of a beam profile composed of symmetric spin-wave width modes with odd numbers of antinodes n=1,3,... into a mixed set of symmetric and asymmetric modes. Due to the spatial homogeneity of the exciting field along the used microstrip antenna, quantized spin-wave m…
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We study spin-wave transport in a microstructured Ni81Fe19 waveguide exhibiting broken translational symmetry. We observe the conversion of a beam profile composed of symmetric spin-wave width modes with odd numbers of antinodes n=1,3,... into a mixed set of symmetric and asymmetric modes. Due to the spatial homogeneity of the exciting field along the used microstrip antenna, quantized spin-wave modes with an even number n of antinodes across the stripe's width cannot be directly excited. We show that a break in translational symmetry may result in a partial conversion of even spin-wave waveguide modes
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Submitted 14 December, 2012; v1 submitted 9 September, 2011;
originally announced September 2011.
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Interference of coherent spin waves in micron-sized ferromagnetic waveguides
Authors:
Philipp Pirro,
Thomas Brächer,
Katrin Vogt,
Björn Obry,
Helmut Schultheiss,
Britta Leven,
Burkard Hillebrands
Abstract:
We present experimental observations of the interference of spin-wave modes propagating in opposite directions in micron-sized NiFe-waveguides. To monitor the local spin-wave intensity distribution and phase of the formed interference pattern, we use Brillouin light scattering microscopy. The two-dimensional spin-wave intensity map can be understood by considering the interference of several waveg…
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We present experimental observations of the interference of spin-wave modes propagating in opposite directions in micron-sized NiFe-waveguides. To monitor the local spin-wave intensity distribution and phase of the formed interference pattern, we use Brillouin light scattering microscopy. The two-dimensional spin-wave intensity map can be understood by considering the interference of several waveguide eigenmodes with different wavevectors quantized across the width of the stripe. The phase shows a transition from linear dependence on the space coordinate near the antennas characteristic for propagating waves to discrete values in the center region characteristic for standing waves.
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Submitted 11 March, 2011;
originally announced March 2011.
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Spin-wave propagation in a microstructured magnonic crystal
Authors:
A. V. Chumak,
P. Pirro,
A. A. Serga,
M. P. Kostylev,
R. L. Stamps,
H. Schultheiss,
K. Vogt,
S. J. Hermsdoerfer,
B. Laegel,
P. A. Beck,
B. Hillebrands
Abstract:
Transmission of microwave spin waves through a microstructured magnonic crystal in the form of a permalloy waveguide of a periodically varying width was studied experimentally and theoretically. The spin wave characteristics were measured by spatially-resolved Brillouin light scattering microscopy. A rejection frequency band was clearly observed. The band gap frequency was controlled by the appl…
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Transmission of microwave spin waves through a microstructured magnonic crystal in the form of a permalloy waveguide of a periodically varying width was studied experimentally and theoretically. The spin wave characteristics were measured by spatially-resolved Brillouin light scattering microscopy. A rejection frequency band was clearly observed. The band gap frequency was controlled by the applied magnetic field. The measured spin-wave intensity as a function of frequency and propagation distance is in good agreement with a model calculation.
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Submitted 10 November, 2009;
originally announced November 2009.
