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X-ray diffraction reveals the consequences of strong deformation in thin smectic films: dilation and chevron formation
Authors:
Jean de Dieu Niyonzima,
Haifa Jeridi,
Lamya Essaoui,
Caterina Tosarelli,
Alina Vlad,
Alessandro Coati,
Sebastien Royer,
Isabelle Trimaille,
Michel Goldmann,
Bruno Gallas,
Doru Constantin,
David Babonneau,
Yves Garreau,
Bernard Croset,
Samo Kralj,
Randall D. Kamien,
Emmanuelle Lacaze
Abstract:
Smectic liquid crystals can be viewed as model systems for lamellar structures for which there has been extensive theoretical development. We demonstrate that a nonlinear energy description is required with respect to the usual Landau-de Gennes elasticity in order to explain the observed layer spacing of highly curved smectic layers. Using X-ray diffraction we have quantitatively determined the di…
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Smectic liquid crystals can be viewed as model systems for lamellar structures for which there has been extensive theoretical development. We demonstrate that a nonlinear energy description is required with respect to the usual Landau-de Gennes elasticity in order to explain the observed layer spacing of highly curved smectic layers. Using X-ray diffraction we have quantitatively determined the dilation of bent layers distorted by antagonistic anchoring (as high as 1.8% of dilation for the most bent smectic layers) and accurately described it by the minimal nonlinear expression for energy. We observe a 1° tilt of planar layers that are connected to the curved layers. This value is consistent with simple energetic calculations, demonstrating how the bending energy impacts the overall structure of a thin distorted smectic film. Finally, we show that combined X-ray measurements and theoretical modeling allow for the quantitative determination of the number of curved smectic layers and of the resulting thickness of the dilated region with unprecedented precision.
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Submitted 15 July, 2024;
originally announced July 2024.
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Structure of germanene/Al(111): a two-layers surface alloy
Authors:
K. Zhang,
D. Sciacca,
M. -C. Hanf,
R. Bernard,
Yves Borensztein,
A. Resta,
Y. Garreau,
A. Vlad,
A. Coati,
I. Lefebvre,
M. Derivaz,
C. Pirri,
P. Sonnet,
R. Stephan,
G. Prévot
Abstract:
Unlike silicene, for which the demonstration of its existence has been done through numerous independent studies, the possibility of growing epitaxial germanene remains highly controversial. It has been recently shown by scanning tunneling microscopy that the (3 x 3) surface reconstruction formed upon Ge deposition on Al(111) presents a honeycomb structure, and it was assigned to a pure germanene…
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Unlike silicene, for which the demonstration of its existence has been done through numerous independent studies, the possibility of growing epitaxial germanene remains highly controversial. It has been recently shown by scanning tunneling microscopy that the (3 x 3) surface reconstruction formed upon Ge deposition on Al(111) presents a honeycomb structure, and it was assigned to a pure germanene monolayer. Using quantitative measurements by surface X-ray diffraction compared to density functional theory calculations, we demonstrate that this Ge/Al(111) (3 x 3) reconstruction corresponds, in fact, to a mixed Ge--Al honeycomb layer on top of an alloyed interfacial layer. The model of a germanene monolayer on top of the Al(111) surface can be completely excluded.
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Submitted 8 November, 2021;
originally announced November 2021.
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Co/Ni multilayers for spintronics: high spin-polarization and tunable magnetic anisotropy
Authors:
S. Andrieu,
T. Hauet,
M. Gottwald,
A. Rajanikanth,
L. Calmels,
A. M. Bataille,
F. Montaigne,
S. Mangin,
E. Otero,
P. Ohresser,
P. Le Fevre,
F. Bertran,
A. Resta,
A. Vlad,
A. Coati,
Y. Garreau
Abstract:
In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)…
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In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)] single-crystalline stacks grown by molecular beam epitaxy.
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Submitted 6 February, 2018;
originally announced February 2018.
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The structure and evolution of semiconducting buffer graphene grown on SiC(0001)
Authors:
M. Conrad,
J. Rault,
Y. Utsumi,
Y. Garreau,
A. Vlad,
A. Coati,
J. -P. Rueff,
P. F. Miceli,
E. H. Conrad
Abstract:
Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it…
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Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it. We show that no more than 26\% of the buffer carbon is covalently bonded to Si in the SiC interface. We also show that the top SiC bilayer is Si depleted and is the likely the cause of the incommensuration previously observed in this system. When a monolayer graphene layer forms above the buffer, the buffer layer becomes less corrugated with signs of a change in the bonding geometry with the SiC interface. At the same time, the entire SiC interface becomes more disordered, presumably due to entropy associated with the higher growth temperature.
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Submitted 7 July, 2017;
originally announced July 2017.
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Wide bandgap semiconductor from a hidden 2D incommensurate graphene phase
Authors:
Matthew Conrad,
Feng Wang,
Meredith Nevius,
Katherine Jinkins,
Arlensiú Celis,
Maya Nair,
Amina Taleb-Ibrahim,
Antonio Tejeda,
Yves Garreau,
Alina Vlad,
Alessandro Coati,
Paul Miceli,
Edward Conrad
Abstract:
Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work.…
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Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work. We show, contrary to assumptions of the last forty years, that the buffer graphene layer is not commensurate with SiC. The new modulated structure we've found resolves a long standing contradiction where ab initio calculations expect a metallic buffer, while experimentally it is found to be a semiconductor. Model calculations using the new incommensurate structure show that the semiconducting $π$-band character of the buffer comes from partially hybridized graphene incommensurate boundaries surrounding unperturbed graphene islands.
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Submitted 10 October, 2016; v1 submitted 6 October, 2016;
originally announced October 2016.
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Probing graphene χ(2) using a gold photon sieve
Authors:
Michael Lobet,
Michael Sarrazin,
Francesca Cecchet,
Nicolas Reckinger,
Alexandru Vlad,
Jean-François Colomer,
Dan Lis
Abstract:
Nonlinear second harmonic optical activity of graphene covering a gold photon sieve was determined for different polarizations. The photon sieve consists of a subwavelength gold nanohole array placed on glass. It combines the benefits of efficient light trapping and surface plasmon propagation in order to unravel different elements of graphene second-order susceptibility χ(2). Those elements effic…
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Nonlinear second harmonic optical activity of graphene covering a gold photon sieve was determined for different polarizations. The photon sieve consists of a subwavelength gold nanohole array placed on glass. It combines the benefits of efficient light trapping and surface plasmon propagation in order to unravel different elements of graphene second-order susceptibility χ(2). Those elements efficiently contribute to second harmonic generation. In fact, the graphene- coated photon sieve produces a second harmonic intensity at least two orders of magnitude higher compared with a bare, flat gold layer and an order of magnitude coming from the plasmonic effect of the photon sieve; the remaining enhancement arises from the graphene layer itself. The measured second harmonic generation yield, supplemented by semianalytical computations, provides an original method to constrain the graphene χ(2) elements. The values obtained are |d_{31} + d_{33}| < 8.1 x 10^3 pm^2/V and |d_{15}| < 1.4 x 10^6 pm^2/V for a second harmonic signal at 780 nm. This original method can be applied to any kind of 2D materials covering such a plasmonic structure.
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Submitted 21 December, 2015;
originally announced December 2015.
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Symmetry of the Fermi surface and evolution of the electronic structure across the paramagnetic-helimagnetic transition in MnSi/Si(111)
Authors:
Alessandro Nicolaou,
Matteo Gatti,
Elena Magnano,
Patrick Le Fèvre,
Federica Bondino,
François Bertran,
Antonio Tejeda,
Michèle Sauvage-Simkin,
Alina Vlad,
Yves Garreau,
Alessandro Coati,
Nicolas Guérin,
Fulvio Parmigiani,
Amina Taleb-Ibrahimi
Abstract:
MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS…
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MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS symmetry and the evolution of the electronic structure across the paramagnetic-helimagnetic transition at T$_C$ $\sim$ 40 K, along with the appearance of sharp quasiparticle emission below T$_C$. The shape of the resulting FS is found to fulfill robust nesting effects. These effects can be at the origin of strong magnetic fluctuations not accounted for by state-of-art quasiparticle self-consistent GW approximation. From this perspective, the unforeseen quasiparticle damping detected in the paramagnetic phase and relaxing only below T$_C$, along with the persistence of the d-bands splitting well above T$_C$, at odds with a simple Stoner model for itinerant magnetism, open the search for exotic magnetic interactions favored by FS nesting and affecting the quasiparticles lifetime.
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Submitted 20 April, 2015;
originally announced April 2015.
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Colloidal pattern replication through contact photolithography operated in a "Talbot-Fabry-Perot" regime
Authors:
Aline Emplit,
Jian Xiang Lian,
Isabelle Huynen,
Alexandru Vlad,
Michael Sarrazin
Abstract:
We detail on a continuous colloidal pattern replication by using contact photolithography. Chrome on quartz masks are fabricated using colloidal nanosphere lithography and subsequently used as photolithography stamps. Hexagonal pattern arrangements with different dimensions (980, 620 and 480 nm, using colloidal particles with respective diameters) have been studied. When the mask and the imaged re…
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We detail on a continuous colloidal pattern replication by using contact photolithography. Chrome on quartz masks are fabricated using colloidal nanosphere lithography and subsequently used as photolithography stamps. Hexagonal pattern arrangements with different dimensions (980, 620 and 480 nm, using colloidal particles with respective diameters) have been studied. When the mask and the imaged resist layer were in intimate contact, a high fidelity pattern replica was obtained after photolithography exposure and processing. In turn, the presence of an air-gap in between has been found to affect the projected image onto the photoresist layer, strongly dependent on the mask feature size and air-gap height. Pattern replication, inversion and hybridization was achieved for 980 nm-period mask; no hybridization for the 620 nm; and only pattern replication for the 480 nm. These results are interpreted in the framework of a "Talbot-Fabry-Perot" effect. Numerical simulations corroborate with the experimental findings providing insight into the involved processes highlighting the important parameters affecting the exposure pattern. The approach allows complex subwavelength patterning and is relevant for a 3D layer-by-layer printing.
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Submitted 13 February, 2014;
originally announced February 2014.
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Graphene-coated holey metal films: tunable molecular sensing by surface plasmon resonance
Authors:
Nicolas Reckinger,
Alexandru Vlad,
Sorin Melinte,
Jean-Francois Colomer,
Michael Sarrazin
Abstract:
We report on the enhancement of surface plasmon resonances in a holey bidimensional grating of subwavelength size, drilled in a gold thin film coated by a graphene sheet. The enhancement originates from the coupling between charge carriers in graphene and gold surface plasmons. The main plasmon resonance peak is located around 1.5 microns. A lower constraint on the gold-induced doping concentratio…
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We report on the enhancement of surface plasmon resonances in a holey bidimensional grating of subwavelength size, drilled in a gold thin film coated by a graphene sheet. The enhancement originates from the coupling between charge carriers in graphene and gold surface plasmons. The main plasmon resonance peak is located around 1.5 microns. A lower constraint on the gold-induced doping concentration of graphene is specified and the interest of this architecture for molecular sensing is also highlighted.
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Submitted 23 May, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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Flexible fiber batteries for applications in smart textiles
Authors:
Hang Qu,
Jean-Pierre Bourgeois,
Julien Rolland,
Alexandru Vlad,
Jean-François Gohy,
Maksim Skorobogatiy
Abstract:
Here we discuss two alternative approaches for building flexible batteries for applications in smart textiles. The first approach uses well-studied inorganic electrochemistry (Al-NaOCl galvanic cell) and innovative packaging in order to produce batteries in a slender and flexible fiber form that can be further weaved directly into the textiles. During fabrication process the battery electrodes are…
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Here we discuss two alternative approaches for building flexible batteries for applications in smart textiles. The first approach uses well-studied inorganic electrochemistry (Al-NaOCl galvanic cell) and innovative packaging in order to produce batteries in a slender and flexible fiber form that can be further weaved directly into the textiles. During fabrication process the battery electrodes are co-drawn within a microstructured polymer fiber, which is later filled with liquid electrolyte. The second approach describes Li-ion chemistry within solid polymer electrolytes that are used to build a fully solid and soft rechargeable battery that can be furthermore stitched onto a textile, or integrated as stripes during weaving process.
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Submitted 7 January, 2013;
originally announced January 2013.
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Erbium Silicide Growth in the Presence of Residual Oxygen
Authors:
Nicolas Reckinger,
Xiaohui Tang,
Sylvie Godey,
Emmanuel Dubois,
Adam Laszcz,
Jacek Ratajczak,
Alexandru Vlad,
Constantin Augustin Dutu,
Jean-Pierre Raskin
Abstract:
The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited,…
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The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.
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Submitted 25 October, 2011;
originally announced October 2011.
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Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots
Authors:
S. Faniel,
B. Hackens,
A. Vlad,
L. Moldovan,
C. Gustin,
B. Habib,
S. Melinte,
M. Shayegan,
V. Bayot
Abstract:
We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures $T$ below 500 mK, we observe signatures of coherent transport, namely, conductance fluctuations and weak antilocalization.
From these effects, the hole dephasing time $τ_φ$ is extracted using the random matrix theo…
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We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures $T$ below 500 mK, we observe signatures of coherent transport, namely, conductance fluctuations and weak antilocalization.
From these effects, the hole dephasing time $τ_φ$ is extracted using the random matrix theory. While $τ_φ$ shows a $T$-dependence that lies between $T^{-1}$ and $T^{-2}$, similar to that reported for electrons, its value is found to be approximately one order of magnitude smaller.
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Submitted 26 September, 2006;
originally announced September 2006.
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Thermopower of Interacting GaAs Bilayer Hole Systems in the Reentrant Insulating Phase near $ν=1$
Authors:
S. Faniel,
E. Tutuc,
E. P. De Poortere,
C. Gustin,
A. Vlad,
S. Melinte,
M. Shayegan,
V. Bayot
Abstract:
We report thermopower measurements of interacting GaAs bilayer hole systems. When the carrier densities in the two layers are equal, these systems exhibit a reentrant insulating phase near the quantum Hall state at total filling factor $ν=1$. Our data show that as the temperature is decreased, the thermopower diverges in the insulating phase. This behavior indicates the opening of an energy gap…
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We report thermopower measurements of interacting GaAs bilayer hole systems. When the carrier densities in the two layers are equal, these systems exhibit a reentrant insulating phase near the quantum Hall state at total filling factor $ν=1$. Our data show that as the temperature is decreased, the thermopower diverges in the insulating phase. This behavior indicates the opening of an energy gap at low temperature, consistent with the formation of a pinned Wigner solid. We extract an energy gap and a Wigner solid melting phase diagram.
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Submitted 27 December, 2004;
originally announced December 2004.
