Showing 1–20 of 20 results for author: Viti, L

Roadmap for Photonics with 2D Materials

Authors: F. Javier García de Abajo, D. N. Basov, Frank H. L. Koppens, Lorenzo Orsini, Matteo Ceccanti, Sebastián Castilla, Lorenzo Cavicchi, Marco Polini, P. A. D. Gonçalves, A. T. Costa, N. M. R. Peres, N. Asger Mortensen, Sathwik Bharadwaj, Zubin Jacob, P. J. Schuck, A. N. Pasupathy, Milan Delor, M. K. Liu, Aitor Mugarza, Pablo Merino, Marc G. Cuxart, Emigdio Chávez-Angel, Martin Svec, Luiz H. G. Tizei, Florian Dirnberger , et al. (123 additional authors not shown)

Abstract: Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combinat… ▽ More Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners. △ Less

Submitted 14 April, 2025; v1 submitted 6 April, 2025; originally announced April 2025.

Comments: 199 pages, 42 figures, 1154 references

Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures

Authors: M. Asgari, L. Viti, O. Balci, S. M. Shinde, J. Zhang, H. Ramezani, S. Sharma, A. Meersha, G. Menichetti, C. McAleese, B. Conran, X. Wang, A. Tomadin, A. C. Ferrari, M. S. Vitiello

Abstract: The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration… ▽ More The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report on the development of room temperature THz detection in large-area SLG, grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations on SLG on Al2O3 with and without large-area CVD hBN capping to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5ns and noise equivalent powers ~1nWHz-1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered materials heterostructures for THz detection. △ Less

Submitted 28 June, 2022; originally announced June 2022.

Comments: 15 pages, 4 Figures. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at the link https://doi.org/10.1063/5.0097726

Lattice dynamics and elastic properties of black phosphorus

Authors: Eva A. A. Pogna, Alexeï Bosak, Alexandra Chumakova, Victor Milman, Björn Winkler, Leonardo Viti, Miriam S. Vitiello

Abstract: We experimentally determine the lattice dynamics of black phosphorus layered crystals through a combination of x-ray diffuse scattering and inelastic x-ray scattering, and we rationalize our experimental findings using $\textit{ab initio}$ calculations. From the phonon dispersions at terahertz frequencies, we derive the full single-crystal elastic tensor and relate it to the macroscopic elastic re… ▽ More We experimentally determine the lattice dynamics of black phosphorus layered crystals through a combination of x-ray diffuse scattering and inelastic x-ray scattering, and we rationalize our experimental findings using $\textit{ab initio}$ calculations. From the phonon dispersions at terahertz frequencies, we derive the full single-crystal elastic tensor and relate it to the macroscopic elastic response of black phosphorus, described by the elastic moduli. The elastic stiffness coefficients obtained here provide an important benchmark for models of black phosphorus and related materials, such as phosphorene and black phosphorus nanotubes, recently emerged quantum materials, disclosing a huge potential for nanophotonics, optoelectronics, and quantum sensing. △ Less

Submitted 8 June, 2022; originally announced June 2022.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 105 (2022) 184306

Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies

Authors: Leonardo Viti, Miriam Serena Vitiello

Abstract: The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano… ▽ More The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano-electronic and nano-photonic devices and components by design, offering a unique platform for developing new devices with a variety of ad-hoc properties. In this perspective article, we provide a vision on the key transformative applications of 2D nanomaterials for the developments of nanoelectronic, nanophotonic, optical and plasmonic devices, at terahertz frequencies, highlighting how the rich physical phenomena enabled by their unique band-structure engineering can allow those devices to boost the vibrant field of quantum science and quantum technologies. △ Less

Submitted 6 April, 2022; originally announced April 2022.

Comments: This is the authors version of the article accepted for publication in Journal of Applied Physics https://doi.org/10.1063/5.0065595

Journal ref: Journal of Applied Physics 130, 170903 (2021)

Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies

Authors: Mahdi Asgari, Dominique Coquillat, Guido Menichetti, Valentina Zannier, Nina Dyakonova, Wojciech Knap, Lucia Sorba, Leonardo Viti, Miriam Serena Vitiello

Abstract: Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter… ▽ More Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies. △ Less

Submitted 10 September, 2021; originally announced September 2021.

Comments: This is the authors' version of the article submitted to Nano Letters and accepted for publication https://doi.org/10.1021/acs.nanolett.1c02022 (18 Pages, 4 Figures)

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Authors: Eva A. A. Pogna, Mahdi Asgari, Valentina Zannier, Lucia Sorba, Leonardo Viti, Miriam S. Vitiello

Abstract: Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining hi… ▽ More Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here, we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and monitoring both electrical and optical readouts, we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric or bolometric currents whose interplay is discussed as a function of photon density and material doping, therefore providing a route to engineer photo-responses by design. △ Less

Submitted 21 November, 2020; originally announced November 2020.

Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies

Authors: Leonardo Viti, Alisson R. Cadore, Xinxin Yang, Andrei Vorobiev, Jakob E. Muench, Kenji Watanabe, Takashi Taniguchi, Jan Stake, Andrea C. Ferrari, Miriam S. Vitiello

Abstract: Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots… ▽ More Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications. △ Less

Submitted 24 June, 2020; v1 submitted 18 June, 2020; originally announced June 2020.

Comments: This is the unedited authors' version of the article accepted for publication in Nanophotonics 2020 (Online ISSN: 2192-8614)

HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise

Authors: Leonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, Miriam S. Vitiello

Abstract: Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide… ▽ More Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}μm^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date. △ Less

Submitted 21 April, 2020; originally announced April 2020.

Comments: This is the unedited authors' version of the submitted article, published in its final form at http://dx.doi.org/10.1021/acs.nanolett.9b05207 16 Pages, 4 Figures

Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction

Authors: Sebastián Castilla, Bernat Terrés, Marta Autore, Leonardo Viti, Jian Li, Alexey Y. Nikitin, Ioannis Vangelidis, Kenji Watanabe, Takashi Taniguchi, Elefterios Lidorikis, Miriam S. Vitiello, Rainer Hillenbrand, Klaas-Jan Tielrooij, Frank H. L. Koppens

Abstract: Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that… ▽ More Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that exploits the photothermoelectric (PTE) effect, based on a design that employs a dual-gated, dipolar antenna with a gap of 100 nm. This narrow-gap antenna simultaneously creates a pn junction in a graphene channel located above the antenna and strongly concentrates the incoming radiation at this pn junction, where the photoresponse is created. We demonstrate that this novel detector has an excellent sensitivity, with a noise-equivalent power of 80 pW-per-square-root-Hz at room temperature, a response time below 30 ns (setup-limited), a high dynamic range (linear power dependence over more than 3 orders of magnitude) and broadband operation (measured range 1.8-4.2 THz, antenna-limited), which fulfills a combination that is currently missing in the state-of-the-art detectors. Importantly, on the basis of the agreement we obtained between experiment, analytical model, and numerical simulations, we have reached a solid understanding of how the PTE effect gives rise to a THz-induced photoresponse, which is very valuable for further detector optimization. △ Less

Submitted 6 May, 2019; originally announced May 2019.

Comments: 26 pages, 3 main figures and 10 supplementary figures

Journal ref: Nano Letters 2019

Thermoelectric terahertz photodetectors based on selenium-doped black phosphorus flakes

Authors: Leonardo Viti, Antonio Politano, Kai Zhang, Miriam Serena Vitiello

Abstract: Chemical doping of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2V-1s-1 in a SiO2-encapsulated FET. A… ▽ More Chemical doping of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2V-1s-1 in a SiO2-encapsulated FET. A room-temperature responsivity of 3 V/W was observed, with a noise-equivalent power of 7 nWHz-1/2 at 3.4 THz, comparable with the state-of-the-art room-temperature photodetectors operating at the same frequency. Therefore, the inclusion of Se dopants in the growth process of black phosphorus crystals enables the optimization of the transport and optical performances of FETs in the far-infrared with a high potential for the development of BP-based electro-optical devices. We also demonstrate that the flake thickness can be tuned according to the target application. Specifically, thicker flakes (>80 nm) are suitable for applications in which high mobility and high speed are essential, thinner flakes (<10 nm) are more appropriate for applications requiring high on/off ratios, while THz photodetection is optimal with flakes 30-40 nm thick, due to the larger carrier density tunability. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Comments: 8 pages, 4 figures. This is the pre-peer reviewed, authors' version of the Nanoscale article, published in its final form at doi: 10.1039/c8nr09060b

Journal ref: Nanoscale, 2019, 11, 1995-2002

Plasmonics with two-dimensional semiconductors "beyond graphene": from basic research to technological applications

Authors: Amit Agarwal, Miriam S. Vitiello, Leonardo Viti, Anna Cupolillo, Antonio Politano

Abstract: In this minireview, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with damping processes… ▽ More In this minireview, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with damping processes dominated by intraband rather than interband transitions, unlike graphene. Spin-orbit coupling strongly affects the plasmonic spectrum of buckled honeycomb lattices (silicene and germanene), while the anisotropic lattice of phosphorene determines different propagation of plasmons along the armchair and zigzag direction. We also review existing applications of plasmonics with two-dimensional materials in the fields of thermoplasmonics, biosensing, and plasma-wave Terahertz detection. Finally, we consider the capabilities of van der Waals heterostructures for innovative low-loss plasmonic devices. △ Less

Submitted 1 April, 2019; v1 submitted 7 May, 2018; originally announced May 2018.

Comments: 8 pages, 4 figures, This is the pre-peer reviewed, authors' version of the published Nanoscale article, 2018; minor revision

Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies

Authors: Leonardo Viti, Jin Hu, Dominique Coquillat, Antonio Politano, Christophe Consejo, Wojciech Knap, Miriam S. Vitiello

Abstract: Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, whic… ▽ More Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators, especially in the far-infrared. Two-dimensional (2D) layered materials, like graphene and phosphorene, recently emerged as a reliable, flexible and versatile alternative for devising efficient RT detectors operating at Terahertz frequencies. We here combine the benefit of the heterostructure architecture with the exceptional technological potential of 2D layered nanomaterials; by reassembling the thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene (black phosphorus (BP)) we mechanically stacked hBN/BP/hBN heterostructures to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range from 4K to 300K with a record SNR=20000. △ Less

Submitted 3 May, 2018; originally announced May 2018.

Journal ref: Adv. Mater. 2016, 28, 7390-7396

Black-Phosphorus Terahertz Photodetectors

Authors: Leonardo Viti, Jin Hu, Dominique Coquillat, Wojciech Knap, Alessandro Tredicucci, Antonio Politano, Miriam Serena Vitiello

Abstract: The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Despite the impressive impact in a variety of photonic applications, the absence of energy gap has hampered its broader applicability in many optoelectronic devices. The recent advance of novel 2D materials, such as transition-metal dichalcogenide… ▽ More The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Despite the impressive impact in a variety of photonic applications, the absence of energy gap has hampered its broader applicability in many optoelectronic devices. The recent advance of novel 2D materials, such as transition-metal dichalcogenides or atomically thin elemental materials, (e.g. silicene, germanene and phosphorene) promises a revolutionary step-change. Here we devise the first room-temperature Terahertz (THz) frequency detector exploiting few-layer phosphorene, e.g., a 10 nm thick flake of exfoliated crystalline black phosphorus (BP), as active channel of a field-effect transistor (FET). By exploiting the direct band gap of BP to fully switch between insulating and conducting states and by engineering proper antennas for efficient light harvesting, we reach detection performance comparable with commercial detection technologies, providing the first technological demonstration of a phosphorus-based active THz device. △ Less

Submitted 2 May, 2018; originally announced May 2018.

Journal ref: Adv. Mater. 2015, 27, 5567-5572

The role of surface chemical reactivity in the stability of electronic nanodevices based on two-dimensional materials "beyond graphene" and topological insulators

Authors: A. Politano, M. S. Vitiello, L. Viti, D. W. Boukhvalov, G. Chiarello

Abstract: Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient conditions was observed for silicene and phosphorene with subsequent reduction of the mobility of charge carriers, nanodevices with active channels of indi… ▽ More Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient conditions was observed for silicene and phosphorene with subsequent reduction of the mobility of charge carriers, nanodevices with active channels of indium selenide, bismuth chalcogenides and transition-metal dichalcogenides are stable in air. However, air-exposed indium selenide suffers of p-type doping due to water decomposition on Se vacancies, whereas the low mobility of charge carriers in transition-metal dichalcogenides increases the response time of nanodevices. Conversely, bismuth chalcogenides require a control of crystalline quality, which could represent a serious hurdle for up scaling. △ Less

Submitted 2 May, 2018; originally announced May 2018.

Journal ref: FlatChem 1 (2017) 60-64

Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

Authors: A. Kadykov, F. Teppe, C. Consejo, L. Viti, M. Vitiello, D. Coquillat, S. Ruffenach, S. Morozov, S. Kristopenko, M. Marcinkiewicz, N. Dyakonova, W. Knap, V. Gavrilenko, N. N. Michailov, S. A. Dvoretskii

Abstract: We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological F… ▽ More We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Journal ref: APPLIED PHYSICS LETTERS 107, 152101 (2015)

Photonic Devices Based On Black-Phosphorus and Combined Hybrid 2D nanomaterials

Authors: Leonardo Viti, Miriam S. Vitiello

Abstract: Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the far-infrared. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a ma… ▽ More Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the far-infrared. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them black-phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap in-between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be engineered from "scratch" like transparent saturable absorbers, fast photocounductive switch and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black phosphorus-based THz photonics and discuss future perspectives of this rapidly developing research field. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Journal ref: Rivista Del Nuovo Cimento 39(8) 371-398, 2016

Probing topological insulators surface states via plasma-wave Terahertz detection

Authors: Leonardo Viti, Dominique Coquillat, Antonio Politano, Konstantin A. Kokh, Ziya S. Aliev, Mahammad B. Babanly, Oleg E. Tereshchenko, Wojciech Knap, Evgueni V. Chulkov, Miriam S. Vitiello

Abstract: Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone… ▽ More Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the "activated" TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Journal ref: Nano Lett. 2016, 16, 80-87

Unusually strong lateral interaction in the CO overlayer in phosphorene-based systems

Authors: Antonio Politano, Miriam Serena Vitiello, Leonardo Viti, Jin Hu, Zhiqiang Mao, Jiang Wei, Gennaro Chiarello, Danil W. Boukhvalov

Abstract: By means of vibrational spectroscopy and density functional theory (DFT), we investigate CO adsorption on phosphorene-based systems. We find stable CO adsorption at room temperature on both phosphorene and bulk black phosphorus. The adsorption energy and vibrational spectrum have been calculated for several possible configurations of the CO overlayer. We find that the vibrational spectrum is chara… ▽ More By means of vibrational spectroscopy and density functional theory (DFT), we investigate CO adsorption on phosphorene-based systems. We find stable CO adsorption at room temperature on both phosphorene and bulk black phosphorus. The adsorption energy and vibrational spectrum have been calculated for several possible configurations of the CO overlayer. We find that the vibrational spectrum is characterized by two different C-O stretching energies. The experimental data are in good agreement with the prediction of the DFT model and unveil the unusual C-O vibrational band at 165-180 meV, activated by the lateral interactions in the CO overlayer. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Journal ref: Nano Res. 2016, 9(9): 2598-2605

Femtosecond photo-switching of interface polaritons in black phosphorus heterostructures

Authors: Markus A. Huber, Fabian Mooshammer, Markus Plankl, Leonardo Viti, Fabian Sandner, Lukas Z. Kastner, Tobias Frank, Jaroslav Fabian, Miriam S. Vitiello, Tyler L. Cocker, Rupert Huber

Abstract: The possibility of hybridizing collective electronic motion with mid-infrared (mid-IR) light to form surface polaritons has made van der Waals layered materials a versatile platform for extreme light confinement and tailored nanophotonics. Graphene and its heterostructures have attracted particular attention because the absence of an energy gap allows for plasmon polaritons to be continuously tune… ▽ More The possibility of hybridizing collective electronic motion with mid-infrared (mid-IR) light to form surface polaritons has made van der Waals layered materials a versatile platform for extreme light confinement and tailored nanophotonics. Graphene and its heterostructures have attracted particular attention because the absence of an energy gap allows for plasmon polaritons to be continuously tuned. Here, we introduce black phosphorus (BP) as a promising new material in surface polaritonics that features key advantages for ultrafast switching. Unlike graphene, BP is a van der Waals bonded semiconductor, which enables high-contrast interband excitation of electron-hole pairs by ultrashort near-infrared (near-IR) pulses. We design a SiO$_2$/BP/SiO$_2$ heterostructure in which the surface phonon modes of the SiO$_2$ layers hybridize with surface plasmon modes in BP that can be activated by photo-induced interband excitation. Within the Reststrahlen band of SiO$_2$, the hybrid interface polariton assumes surface-phonon-like properties, with a well-defined frequency and momentum and excellent coherence. During the lifetime of the photogenerated electron-hole plasma, coherent polariton waves can be launched by a broadband mid-IR pulse coupled to the tip of a scattering-type scanning near-field optical microscopy (s-SNOM) setup. The scattered radiation allows us to trace the new hybrid mode in time, energy, and space. We find that the surface mode can be activated within ~50 fs and disappears within 5 ps, as the electron-hole pairs in BP recombine. The excellent switching contrast and switching speed, the coherence properties, and the constant wavelength of this transient mode make it a promising candidate for ultrafast nanophotonic devices. △ Less

Submitted 28 September, 2017; originally announced September 2017.

Journal ref: Nature Nanotechnology 12, 207-211 (2017)

Ultrafast single-nanowire multi-terahertz spectroscopy with sub-cycle temporal resolution

Authors: M. Eisele, T. L. Cocker, M. A. Huber, M. Plankl, L. Viti, D. Ercolani, L. Sorba, M. S. Vitiello, R. Huber

Abstract: Phase-locked ultrashort pulses in the rich terahertz (THz) spectral range have provided key insights into phenomena as diverse as quantum confinement, first-order phase transitions, high-temperature superconductivity, and carrier transport in nanomaterials. Ultrabroadband electro-optic sampling of few-cycle field transients can even reveal novel dynamics that occur faster than a single oscillation… ▽ More Phase-locked ultrashort pulses in the rich terahertz (THz) spectral range have provided key insights into phenomena as diverse as quantum confinement, first-order phase transitions, high-temperature superconductivity, and carrier transport in nanomaterials. Ultrabroadband electro-optic sampling of few-cycle field transients can even reveal novel dynamics that occur faster than a single oscillation cycle of light. However, conventional THz spectroscopy is intrinsically restricted to ensemble measurements by the diffraction limit. As a result, it measures dielectric functions averaged over the size, structure, orientation and density of nanoparticles, nanocrystals or nanodomains. Here, we extend ultrabroadband time-resolved THz spectroscopy (20 - 50 THz) to the sub-nanoparticle scale (10 nm) by combining sub-cycle, field-resolved detection (10 fs) with scattering-type near-field scanning optical microscopy (s-NSOM). We trace the time-dependent dielectric function at the surface of a single photoexcited InAs nanowire in all three spatial dimensions and reveal the ultrafast ($<$50 fs) formation of a local carrier depletion layer. △ Less

Submitted 14 April, 2016; originally announced April 2016.

Journal ref: Nature Photonics 8, 841 - 845 (2014)