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Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
Authors:
Jie Zhou,
Haibo Wang,
Yifu Guo,
Alireza Abrand,
Yiran Li,
Yang Liu,
Jiarui Gong,
Po Rei Huang,
Jianping Shen,
Shengqiang Xu,
Daniel Vincent,
Samuel Haessly,
Yi Lu,
Munho Kim,
Shui-Qing Yu,
Parsian K. Mohseni,
Guo-En Chang,
Zetian Mi,
Kai Sun,
Xiao Gong,
Mikhail A Kats,
Zhenqiang Ma
Abstract:
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of heterojunction devices, in particular utilizing extreme lattice mismatches. We demonstrate the manipulation of device behaviors and performance enhancement ach…
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Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of heterojunction devices, in particular utilizing extreme lattice mismatches. We demonstrate the manipulation of device behaviors and performance enhancement achievable through a lattice-mismatched, single-crystalline GaAs/GeSn-multi-quantum well (MQW)/Ge n-i-p heterojunction by employing advanced semiconductor grafting technology. With engineered band alignment and optical field distribution, the grafted GaAs/GeSn-MQW/Ge n-i-p photodiode achieved outstanding performance: a record-low dark current density of 1.22E10^-7 A/cm^2, an extended spectral response from ~0.5 to 2 um, and improved photoresponsivity of RVIS of 0.85 A/W and RNIR of 0.40 A/W at 520 and 1570 nm, respectively. The dark current density is at least 5 orders of magnitude lower than state-of-the-art GeSn photodiodes. The photoresponsivity demonstrates an approximately sevenfold enhancement in the VIS range and a threefold improvement in the NIR range compared to the reference epitaxial photodiode. This work presents a unique strategy for constructing lattice-mismatched semiconductor heterojunction devices. More importantly, the implications transcend the current GaAs/GeSn-MQW/Ge example, offering potential applications in other material systems and freeing device design from the stringent lattice-matching constraints of conventional heteroepitaxy.
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Submitted 7 June, 2025;
originally announced June 2025.
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Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
Authors:
Jie Zhou,
Daniel Vincent,
Sudip Acharya,
Solomon Ojo,
Alireza Abrand,
Yang Liu,
Jiarui Gong,
Dong Liu,
Samuel Haessly,
Jianping Shen,
Shining Xu,
Yiran Li,
Yi Lu,
Hryhorii Stanchu,
Luke Mawst,
Bruce Claflin,
Parsian K. Mohseni,
Zhenqiang Ma,
Shui-Qing Yu
Abstract:
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EE…
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Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.
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Submitted 15 September, 2024;
originally announced September 2024.
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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Authors:
Yang Liu,
Jiarui Gong,
Sudip Acharya,
Yiran Lia,
Alireza Abrand,
Justin M. Rudie,
Jie Zhou,
Yi Lu,
Haris Naeem Abbasi,
Daniel Vincent,
Samuel Haessly,
Tsung-Han Tsai,
Parsian K. Mohseni,
Shui-Qing Yu,
Zhenqiang Ma
Abstract:
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better electro…
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GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better electron confinement and high-quality interfaces, promising for room temperature electrically pumped GeSn laser devices. Therefore, understanding and quantitatively characterizing the band alignment in this grafted heterojunction is crucial. In this study, we explore the band alignment in the grafted monocrystalline Al0.3Ga0.7As /Ge0.853Sn0.147 p-i-n heterojunction. We determined the bandgap values of AlGaAs and GeSn to be 1.81 eV and 0.434 eV by photoluminescence measurements, respectively. We further conducted X-ray photoelectron spectroscopy measurements and extracted a valence band offset of 0.19 eV and a conduction band offset of 1.186 eV. A Type-I band alignment was confirmed which effectively confining electrons at the AlGaAs/GeSn interface. This study improves our understanding of the interfacial band structure in grafted AlGaAs/GeSn heterostructure, providing experimental evidence of the Type-I band alignment between AlGaAs and GeSn, and paving the way for their application in laser technologies.
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Submitted 29 August, 2024;
originally announced August 2024.
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AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
Authors:
Yang Liu,
Yiran Li,
Sudip Acharya,
Jie Zhou,
Jiarui Gong,
Alireza Abrand,
Yi Lu,
Daniel Vincent,
Samuel Haessly,
Parsian K. Mohseni,
Shui-Qing Yu,
Zhenqiang Ma
Abstract:
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.1…
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This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.186 eV conduction band barrier between AlGaAs and GeSn, along with a low interfacial density of states. The diode demonstrated impressive electrical characteristics with high uniformity, including a mean ideality factor of 1.47 and a mean rectification ratio of 2.95E103 at +/-2 V across 326 devices, indicating high-quality device fabrication. Comprehensive electrical characterizations, including C-V and I-V profiling, affirm the diode's capability to provide robust electrical confinement and efficient carrier injection. These properties make the Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn DHS a promising candidate for next-generation electrically pumped GeSn lasers, potentially operable at higher temperatures. Our results provide a viable pathway for further advancements in various GeSn-based devices.
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Submitted 15 August, 2024;
originally announced August 2024.
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XPS analysis of molecular contamination and sp2 amorphous carbon on oxidized (100) diamond
Authors:
Ricardo Vidrio,
Daniel Vincent,
Benjamin Bachman,
Cesar Saucedo,
Maryam Zahedian,
Zihong Xu,
Junyu Lai,
Timothy A. Grotjohn,
Shimon Kolkowitz,
Jung-Hun Seo,
Robert J. Hamers,
Keith G. Ray,
Zhenqiang Ma,
Jennifer T. Choy
Abstract:
The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complic…
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The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complicated by surface morphology and purity, which if not accounted for will yield inconsistent determination of the oxygen coverage. We present a comprehensive approach to consistently prepare and analyze oxygen termination of surfaces on (100) single-crystalline diamond. We report on X-ray Photoelectron Spectroscopy (XPS) characterization of diamond surfaces treated with six oxidation methods that include various wet chemical oxidation techniques, photochemical oxidation with UV illumination, and steam oxidation using atomic layer deposition (ALD). Our analysis entails a rigorous XPS peak-fitting procedure for measuring the functionalization of O-terminated diamond. The findings herein have provided molecular-level insights on oxidized surfaces in (100) diamond, including the demonstration of clear correlation between the measured oxygen atomic percentage and the presence of molecular contaminants containing nitrogen, silicon, and sulfur. We also provide a comparison of the sp2 carbon content with the O1s atomic percentage and discern a correlation with the diamond samples treated with dry oxidation which eventually tapers off at a max O1s atomic percentage value of 7.09 +/- 0.40%. Given these results, we conclude that the dry oxidation methods yield some of the highest oxygen amounts, with the ALD water vapor technique proving to be the cleanest technique out of all the oxidation methods explored in this work.
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Submitted 8 May, 2024; v1 submitted 5 April, 2023;
originally announced April 2023.
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Atomic Layer deposition of 2D and 3D standards for quantitative synchrotron-based composition and structural analysis methods
Authors:
Nicholas G. Becker,
Anna Butterworth,
Andrey Sokolov,
Muriel Salome,
Steven Sutton,
De Andrade Vincent,
Andrew Westphal,
Thomas Proslier
Abstract:
The use of Standard Reference Materials (SRM) from the National Institute of Standards and Technology (NIST) for quantitative analysis of chemical composition using Synchrotron based X-Ray Florescence (SR-XRF) and Scanning Transmission X-Ray Microscopy (STXM) is common. These standards however can suffer from inhomogeneity in chemical composition and thickness and often require further calculation…
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The use of Standard Reference Materials (SRM) from the National Institute of Standards and Technology (NIST) for quantitative analysis of chemical composition using Synchrotron based X-Ray Florescence (SR-XRF) and Scanning Transmission X-Ray Microscopy (STXM) is common. These standards however can suffer from inhomogeneity in chemical composition and thickness and often require further calculations, based on sample mounting and detector geometry, to obtain quantitative results. These inhomogeneities negatively impact the reproducibility of the measurements and the quantitative measure itself. Atomic Layer Deposition (ALD) is an inexpensive, scalable deposition technique known for producing uniform, conformal films of a wide range of compounds on nearly any substrate material. These traits make it an ideal deposition method for producing films to replace the NIST standards and create SRM on a wide range of relevant 2D and 3D substrates. Utilizing Rutherford Backscattering, X-ray Reflectivity, Quartz crystal microbalance, STXM, and SR-XRF we show that ALD is capable of producing films that are homogenous over scales ranging from 100's of microns to nms
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Submitted 23 May, 2017;
originally announced May 2017.
