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Design and characterization of a lumped element single-ended superconducting microwave parametric amplifier with on-chip flux bias line
Authors:
Josh Mutus,
Ted White,
Evan Jeffrey,
Daniel Sank,
Rami Barends,
Joerg Bochmann,
Yu Chen,
Zijun Chen,
Ben Chiaro,
Andrew Dunsworth,
Julian Kelly,
Anthony Megrant,
Charles Neill,
Peter O'Malley,
Pedram Roushan,
Amit Vainsencher,
James Wenner,
Irfan Siddiqi,
Rajamani Vijayaraghavan,
Andrew Cleland,
John Martinis
Abstract:
We demonstrate a lumped-element Josephson parametric amplifier, using a single-ended design that includes an on-chip, high-bandwidth flux bias line. The amplifier can be pumped into its region of parametric gain through either the input port or through the flux bias line. Broadband amplification is achieved at a tunable frequency $ω/2 π$ between 5 to 7 GHz with quantum-limited noise performance, a…
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We demonstrate a lumped-element Josephson parametric amplifier, using a single-ended design that includes an on-chip, high-bandwidth flux bias line. The amplifier can be pumped into its region of parametric gain through either the input port or through the flux bias line. Broadband amplification is achieved at a tunable frequency $ω/2 π$ between 5 to 7 GHz with quantum-limited noise performance, a gain-bandwidth product greater than 500 MHz, and an input saturation power in excess of -120 dBm. The bias line allows fast frequency tuning of the amplifier, with variations of hundreds of MHz over time scales shorter than 10 ns.
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Submitted 3 October, 2013; v1 submitted 6 August, 2013;
originally announced August 2013.
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Ferrimagnetism, Antiferromagnetism and Magnetic Frustration in La$_{2-x}$Sr$_{x}$CuRuO$_{6}$ (0 <= x <= 1)
Authors:
P. Anil Kumar,
R. Mathieu,
R. Vijayaraghavan,
Subham Majumdar,
Olof Karis,
P. Nordblad,
Biplab Sanyal,
Olle Eriksson,
D. D. Sarma
Abstract:
We studied structural and magnetic properties of a series of insulating double perovskite compounds, La$_{2-x}$Sr$_{x}$CuRuO$_{6}$ (0 $\le$ x $\le$ 1), representing doping via \textit{A}-site substitution. The end members La$_{2}$CuRuO$_{6}$ and LaSrCuRuO$_{6}$ form in monoclinic structure while the intermediate Sr doped compounds stabilise in triclinic structure. The Cu and Ru ions sit on alterna…
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We studied structural and magnetic properties of a series of insulating double perovskite compounds, La$_{2-x}$Sr$_{x}$CuRuO$_{6}$ (0 $\le$ x $\le$ 1), representing doping via \textit{A}-site substitution. The end members La$_{2}$CuRuO$_{6}$ and LaSrCuRuO$_{6}$ form in monoclinic structure while the intermediate Sr doped compounds stabilise in triclinic structure. The Cu and Ru ions sit on alternate B-sites of the perovskite lattice with $\sim$15% anti-site defects in the undoped sample while the Sr doped samples show a tendency to higher ordering at B-sites. The undoped (x = 0) compound shows a ferrimagnetic-like behaviour at low temperatures. In surprising contrast to the usual expectation of an enhancement of ferromagnetic interaction on doping, an antiferromagnetic-like ground state is realized for all doped samples (x $>$ 0). Heat capacity measurements indicate the absence of any long range magnetic order in any of these compounds. The magnetic relaxation and memory effects observed in all compounds suggest glassy dynamical properties associated with magnetic disorder and frustration. We show that the observed magnetic properties are dominated by the competition between the nearest neighbour Ru -- O -- Cu 180$^\circ$ superexchange interaction and the next nearest neighbour Ru -- O -- O -- Ru 90$^\circ$ superexchange interaction as well as by the formation of anti-site defects with interchanged Cu and Ru positions. Our calculated exchange interaction parameters from first principles calculations for $x$ = 0 and $x$ = 1 support this interpretation.
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Submitted 31 July, 2012; v1 submitted 1 August, 2011;
originally announced August 2011.
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Electron-spectroscopic investigation of metal-insulator transition in Sr2Ru1-xTixO4 (x=0.0-0.6)
Authors:
Sugata Ray,
D. D. Sarma,
R. Vijayaraghavan
Abstract:
We investigate the nature and origin of the metal-insulator transition in Sr2Ru1-xTixO4 as a function of increasing Ti content (x). Employing detailed core, valence, and conduction band studies with x-ray and ultraviolet photoelectron spectroscopies along with Bremsstrahlung isochromat spectroscopy, it is shown that a hard gap opens up for Ti content greater than equal to 0.2, while compositions…
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We investigate the nature and origin of the metal-insulator transition in Sr2Ru1-xTixO4 as a function of increasing Ti content (x). Employing detailed core, valence, and conduction band studies with x-ray and ultraviolet photoelectron spectroscopies along with Bremsstrahlung isochromat spectroscopy, it is shown that a hard gap opens up for Ti content greater than equal to 0.2, while compositions with x<0.2 exhibit finite intensity at the Fermi energy. This establishes that the metal-insulator transition in this homovalent substituted series of compounds is driven by Coulomb interaction leading to the formation of a Mott gap, in contrast to transitions driven by disorder effects or band flling.
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Submitted 2 April, 2006;
originally announced April 2006.
