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Ensemble spin relaxation of shallow donor qubits in ZnO
Authors:
Vasileios Niaouris,
Mikhail V. Durnev,
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Christian Zimmermann,
Aswin Vishnuradhan,
Y. Kozuka,
M. Kawasaki,
Kai-Mei C. Fu
Abstract:
We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic ex…
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We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling.
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Submitted 15 April, 2022; v1 submitted 22 November, 2021;
originally announced November 2021.
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Microscopic model of stacking-fault potential and exciton wave function in GaAs
Authors:
Mikhail V. Durnev,
Mikhail M. Glazov,
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Bethany Matthews,
Steven R. Spurgeon,
P. V. Sushko,
Andreas D. Wieck,
Arne Ludwig,
Kai-Mei C. Fu
Abstract:
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated…
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Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
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Submitted 1 November, 2019;
originally announced November 2019.
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Coherence properties of shallow donor qubits in ZnO
Authors:
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Aswin Vishnuradhan,
Y. Kozuka,
Cameron Johnson,
M. Kawasaki,
Kai-Mei C. Fu
Abstract:
Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence pro…
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Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence properties. We find a longitudinal relaxation time T$_1$ exceeding 100 ms, an inhomogeneous dephasing time T$_2^*$ of $17\pm2$ ns, and a Hahn spin-echo time T$_2$ of $50\pm13$ $μ$s. The magnitude of T$_2^*$ is consistent with the inhomogeneity of the nuclear hyperfine field in natural ZnO. Possible mechanisms limiting T$_2$ include instantaneous diffusion and nuclear spin diffusion (spectral diffusion). These results are comparable to the phosphorous donor system in natural silicon, suggesting that with isotope and chemical purification long qubit coherence times can be obtained for donor spins in a direct band gap semiconductor. This work motivates further research on high-purity material growth, quantum device fabrication, and high-fidelity control of the donor:ZnO system for quantum technologies.
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Submitted 23 May, 2018; v1 submitted 9 February, 2018;
originally announced February 2018.
