-
High frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers
Authors:
A. Pitanti,
T. Makkonen,
M. F. Colombano,
S. Zanotto,
L. Vicarelli,
M. Cecchini,
A. Griol,
D. Navarro-Urrios,
C. Sotomayor-Torres,
A. Martinez,
J. Ahopelto
Abstract:
A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a n…
▽ More
A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, Surface Acoustic Waves are injected in the Si layer where the material has been localy patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we found an external excitation peak efficiency in excess of 500 pm/V at 1 GHz mechanical frequency. Exploiting the long term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a strong candidate for hybrid quantum systems.
△ Less
Submitted 22 May, 2020; v1 submitted 26 March, 2020;
originally announced March 2020.
-
Through-membrane electron-beam lithography for ultrathin membrane applications
Authors:
M. Neklyudova,
A. K. Erdamar,
L. Vicarelli,
S. J. Heerema,
T. Rehfeldt,
G. Pandraud,
Z. Kolahdouz,
C. Dekker,
H. W. Zandbergen
Abstract:
We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH- etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a control…
▽ More
We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH- etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.
△ Less
Submitted 13 September, 2017;
originally announced September 2017.
-
Isolation and characterization of few-layer black phosphorus
Authors:
Andres Castellanos-Gomez,
Leonardo Vicarelli,
Elsa Prada,
Joshua O. Island,
K. L. Narasimha-Acharya,
Sofya I. Blanter,
Dirk J. Groenendijk,
Michele Buscema,
Gary A. Steele,
J. V. Alvarez,
Henny W. Zandbergen,
J. J. Palacios,
Herre S. J. van der Zant
Abstract:
Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Ra…
▽ More
Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Raman spectroscopy and transmission electron microscopy in a fast and reliable way. Moreover, we demonstrate that the exfoliated flakes are highly crystalline and that they are stable even in free-standing form through Raman spectroscopy and transmission electron microscopy measurements. A strong thickness dependence of the band structure is found by density functional theory calculations. The exciton binding energy, within an effective mass approximation, is also calculated for different number of layers. Our computational results for the optical gap are consistent with preliminary photoluminescence results on thin flakes. Finally, we study the environmental stability of black phosphorus flakes finding that the flakes are very hydrophilic and that long term exposure to air moisture etches black phosphorus away. Nonetheless, we demonstrate that the aging of the flakes is slow enough to allow fabrication of field-effect transistors with strong ambipolar behavior. Density functional theory calculations also give us insight into the water-induced changes of the structural and electronic properties of black phosphorus.
△ Less
Submitted 11 July, 2014; v1 submitted 3 March, 2014;
originally announced March 2014.
-
Graphene field effect transistors as room-temperature Terahertz detectors
Authors:
L. Vicarelli,
M. S. Vitiello,
D. Coquillat,
A. Lombardo,
A. C. Ferrari,
W. Knap,
M. Polini,
V. Pellegrini,
A. Tredicucci
Abstract:
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the…
▽ More
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.
△ Less
Submitted 14 March, 2012;
originally announced March 2012.
