Showing 1–50 of 110 results for author: Venkatesan, T

Small polarons mediated near-room-temperature metal-insulator transition in vanadium dioxide and their hopping dynamics

Authors: Xiongfang Liu, Tong Yang, Shanquan Chen, Jing Wu, Chi Sin Tang, Yuanjie Ning, Zuhuang Chen, Liang Dai, Mengxia Sun, Mingyao Chen, Kun Han, Difan Zhou, Shengwei Zeng, Shuo Sun, Sensen Li, Ming Yang, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Andrew T. S. Wee, Xinmao Yin

Abstract: Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellips… ▽ More Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insights into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly-correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities. △ Less

Submitted 22 January, 2025; v1 submitted 28 December, 2023; originally announced December 2023.

Comments: Research article

Journal ref: Applied Physics Reviews. 12, 011403 (2025)

Competition of electronic correlation and reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures

Authors: Xueyan Wang, Lin Sun, Chen Ye, Zhen Huang, Kun Han, Ke Huang, Allen Jian Yang, Shengwei Zeng, Xian Jun Loh, Qiang Zhu, T. Venkatesan, Ariando Ariando, X. Renshaw Wang

Abstract: Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterost… ▽ More Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterostructures exhibit a critical thickness (tc) at which a metal-to-insulator transition (MIT) abruptly occurs at certain thickness, accompanied by the coexistence of two- and three-dimensional (2D and 3D) carriers. Intriguingly, the tc exhibits a V-shaped dependence on the doping concentration of Sr, with the smallest tc value at x = 0.5. We attribute this V-shaped dependence to the competition between the electronic reconstruction (modulated by the polarity) and the electronic correlation (modulated by strain), which are borne out by the experimental results, including strain-dependent electronic properties and the evolution of 2D and 3D carriers. Our findings underscore the significance of the interplay between electronic reconstruction and correlation in the realization and utilization of emergent electronic functionalities in low-dimensional correlated systems. △ Less

Submitted 6 October, 2023; originally announced October 2023.

Coexistence of surface oxygen vacancy and interface conducting states in LaAlO3/SrTiO3 revealed by low-angle resonant soft X-ray scattering

Authors: Ming Yang, Ariando Ariando, Caozheng Diao, James C Lee, Kaushik Jayaraman, Mansoor B A Jalil, Serban Smadici, Shengwei Zeng, Jun Zhou, Weilong Kong, Mark B. H. Breese, Sankar Dhar, Yuan Ping Feng, Peter Abbamonte, Thirumalai Venkatesan, Andrivo Rusydi

Abstract: Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of… ▽ More Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of surface oxygen vacancy at LaAlO3 (surface-Ov), which has predicted surface-to-interface charge transfer yielding metallic interface but insulating surface. To clarify the origin of IMT, one should probe surface-Ov and the associated electronic structures at both the surface and the buried interface simultaneously. Here, using low-angle resonant soft X-ray scattering (LA-RSXS) supported with first-principles calculations, we reveal the co-existence of the surface-Ov state and the interface conducting state only in conducting LaAlO3/SrTiO3 (001) films. Interestingly, both the surface-Ov state and the interface conducting state are absent for the insulating film. As a function of Ov density, while the surface-Ov state is responsible for the IMT, the spatial charge distribution is found responsible for a transition from two-dimensional-like to three-dimensional-like conducting accompanied by spectral weight transfer, revealing the importance of electronic correlation. Our results show the importance of surface-Ov in determining interface properties and provides a new strategy in utilizing LA-RSXS to directly probe the surface and buried interface electronic properties in complex oxide heterostructures. △ Less

Submitted 8 June, 2023; originally announced June 2023.

Direct observation of two-dimensional small polarons at correlated oxide interface

Authors: Chi Sin Tang, Shengwei Zeng, Jing Wu, Shunfeng Chen, Dongsheng Song, Milošević, Ping Yang, Caozheng Diao, Jun Zhou, Stephen J. Pennycook, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Ariando Ariando, Ming Yang, Andrew T. S. Wee, Xinmao Yin

Abstract: Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution… ▽ More Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution spectroscopic ellipsometry.First-principles investigations further reveals that strong coupling between the interfacial electrons and the Ti-lattice result in the formation of localized 2D small polarons.These findings resolve the longstanding issue where the excess experimentally measured interfacial carrier density is significantly lower than theoretically predicted values.The charge-phonon induced lattice distortion further provides an analogue to the superconductive states in magic-angle twisted bilayer graphene attributed to the many-body correlations induced by broken periodic lattice symmetry.Our study sheds light on the multifaceted complexity of broken periodic lattice induced quasi-particle effects and its relationship with superconductivity. △ Less

Submitted 6 July, 2023; v1 submitted 25 October, 2022; originally announced October 2022.

Report number: Applied Physics Reviews 10,031406(2023)

Skyrmionics in correlated oxides

Authors: Zhi Shiuh Lim, Hariom Jani, T. Venkatesan, A. Ariando

Abstract: While chiral magnets, metal-based magnetic multilayers, or Heusler compounds have been considered as the material workhorses in the field of skyrmionics, oxides are now emerging as promising alternatives, as they host special correlations between the spin-orbital-charge-lattice degrees of freedom and/or coupled ferroic order parameters. These interactions open new possibilities for practically exp… ▽ More While chiral magnets, metal-based magnetic multilayers, or Heusler compounds have been considered as the material workhorses in the field of skyrmionics, oxides are now emerging as promising alternatives, as they host special correlations between the spin-orbital-charge-lattice degrees of freedom and/or coupled ferroic order parameters. These interactions open new possibilities for practically exploiting skyrmionics. In this article, we review the recent advances in the observation and control of topological spin textures in various oxide systems. We start with the discovery of skyrmions and related quasiparticles in bulk and heterostructure ferromagnetic oxides. Next, we emphasize the shortcomings of implementing ferromagnetic textures, which have led to the recent explorations of ferrimagnetic and antiferromagnetic oxide counterparts, with higher Curie temperatures, stray-field immunity, low Gilbert damping, ultrafast magnetic dynamics, and/or absence of skyrmion deflection. Then, we highlight the development of novel pathways to control the stability, motion, and detection of topological textures using electric fields and currents. Finally, we present the outstanding challenges that need to be overcome to achieve all-electrical, nonvolatile, low-power oxide skyrmionic devices. △ Less

Submitted 13 February, 2022; v1 submitted 20 November, 2021; originally announced November 2021.

Comments: Authors Zhi Shiuh Lim and Hariom Jani have contributed equally; 22 Pages, 4 Figures; Keywords: Spintronics, Topology, Oxides, Ferrimagnets, Antiferromagnets, Skyrmions, Beyond-Moore Computing

Journal ref: MRS Bulletin 46, 1053 (2021)

Effect of phonon anharmonicity on ferroelectricity in EuxBa1-xTiO3

Authors: Bommareddy Poojitha, Km Rubi, Soumya Sarkar, R. Mahendiran, T. Venkatesan, Surajit Saha

Abstract: Investigating the competition between ferroelectric ordering and quantum fluctuations is essential to tailor the desired functionalities of mixed ferroelectric and incipient ferroelectric systems, like, (Ba,Sr)TiO3 and (Eu,Ba)TiO3. Recently, it has been shown that suppression of quantum fluctuations increases ferroelectric ordering in (Eu,Ba)TiO3 and since these phenomena are coupled to crystallog… ▽ More Investigating the competition between ferroelectric ordering and quantum fluctuations is essential to tailor the desired functionalities of mixed ferroelectric and incipient ferroelectric systems, like, (Ba,Sr)TiO3 and (Eu,Ba)TiO3. Recently, it has been shown that suppression of quantum fluctuations increases ferroelectric ordering in (Eu,Ba)TiO3 and since these phenomena are coupled to crystallographic phase transitions it is essential to understand the role of phonons. Here, we observe that the unusual temperature dependence of phonons in BaTiO3 gets suppressed when Ba2+ is replaced by Eu2+. This manifests in a decrease in the cubic-to-tetragonal (i.e., para-to-ferroelectric) phase transition temperature (by 150 K) and a complete suppression of tetragonality of the lattice (at room temperature by 40% replacement of Ba2+ by Eu2+). We have quantified the anharmonicity of the phonons and observed that the replacement of Ba2+ by Eu2+ suppresses it (by 93%) with a resultant lowering of the ferroelectric ordering temperature in the EuxBa1-xTiO3. This suggests that tuning phonon anharmonicity can be an important route to novel ferroelectric materials. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Journal ref: Phys. Rev. Materials 3, 024412 (2019)

Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization

Authors: Ganesh Ji Omar, Weilong Kong, Hariom Jani, Mengsha Li, Jun Zhou, Zhi Shiuh Lim, Saurav Prakash, Shengwei Zeng, Sonu Hooda, Thirumalai Venkatesan, Yuan Ping Feng, Stephen J. Pennycook, Shen Lei, A. Ariando

Abstract: We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th… ▽ More We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics. △ Less

Submitted 5 November, 2022; v1 submitted 13 October, 2021; originally announced October 2021.

Comments: Total 30 Pages and 18 figures in the main article including supplementary information

Journal ref: Phys. Rev. Lett. 129, 187203 (2022)

Charge Carrier Transport in Iron Pyrite Thin Films: Disorder Induced Variable Range Hopping

Authors: Sudhanshu Shukla, Sinu Mathew, Hwan Sung Choe, Manjusha Chugh, Thomas D. Kuhne, Hossein Mirhosseini, Xiong Qihua, Junqiao Wu, Thirumalai Venkatesan, Thirumany Sritharan, Joel W. Ager

Abstract: The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurements were performed on polycrystalline and nanostructured thin films prepared by three different methods. Films have a high hole density and low mobility regardless of the method used for their preparation. The charge trans… ▽ More The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurements were performed on polycrystalline and nanostructured thin films prepared by three different methods. Films have a high hole density and low mobility regardless of the method used for their preparation. The charge transport mechanism is determined to be nearest neighbour hopping (NNH) at near room temperature with Mott-type variable range hopping (VRH) of holes via localized states occurring at lower temperatures. Density functional theory (DFT) predicts that sulfur vacancy induced localized defect states will be situated within the band gap with the charge remaining localized around the defect. The data indicate that the electronic properties including hopping transport in pyrite thin films can be correlated to sulfur vacancy related defect. The results provide insights on electronic properties of pyrite thin films and its implications for charge transport △ Less

Submitted 20 June, 2021; v1 submitted 15 June, 2021; originally announced June 2021.

Comments: 22 pages, 7 Figures, Supplementary Information

Large Microwave Inductance of Granular Boron-Doped Diamond Superconducting Films

Authors: Bakhrom Oripov, Dinesh Kumar, Cougar Garcia, Patrick Hemmer, Thirumalai Venkatesan, M. S. Ramachandra Rao, Steven M. Anlage

Abstract: Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance… ▽ More Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. The magnetic penetration depth temperature dependence is consistent with that of a fully-gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices. △ Less

Submitted 16 June, 2021; v1 submitted 26 March, 2021; originally announced March 2021.

Journal ref: Appl. Phys. Lett. 118, 242601 (2021)

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Authors: W. X. Zhou, H. J. Wu, J. Zhou, S. W. Zeng, C. J. Li, M. S. Li, R. Guo, J. X. Xiao, Z. Huang, W. M. Lv, K. Han, P. Yang, C. G. Li, Z. S. Lim, H. Wang, Y. Zhang, S. J. Chua, K. Y. Zeng, T. Venkatesan, J. S. Chen, Y. P. Feng, S. J. Pennycook, A. Ariando

Abstract: Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T… ▽ More Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics. △ Less

Submitted 11 July, 2020; originally announced July 2020.

Comments: Main text: 25 pages, 4 figures Supplementary note: 19 pages, 11 figures

Journal ref: Commun. Phys. 2, 125 (2019)

Antiferromagnetic Half-skyrmions and Bimerons at room temperature

Authors: Hariom Jani, Jheng-Cyuan Lin, Jiahao Chen, Jack Harrison, Francesco Maccherozzi, Jonathon Schad, Saurav Prakash, Chang-Beom Eom, A. Ariando, T. Venkatesan, Paolo G. Radaelli

Abstract: In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence of dipolar fields in ferromagnets, restricting the formation of ultra-small topological textures, and the deleterious skyrmion Hall effect when driven by spin to… ▽ More In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence of dipolar fields in ferromagnets, restricting the formation of ultra-small topological textures, and the deleterious skyrmion Hall effect when driven by spin torques have thus far inhibited their practical implementations. Antiferromagnetic analogues, which are predicted to demonstrate relativistic dynamics, fast deflection-free motion and size scaling have recently come into intense focus, but their experimental realizations in natural antiferromagnetic systems are yet to emerge. Here, we demonstrate a family of topological antiferromagnetic spin-textures in $α$-Fe$_2$O$_3$ - an earth-abundant oxide insulator - capped with a Pt over-layer. By exploiting a first-order analogue of the Kibble-Zurek mechanism, we stabilize exotic merons-antimerons (half-skyrmions), and bimerons, which can be erased by magnetic fields and re-generated by temperature cycling. These structures have characteristic sizes of the order ~100 nm that can be chemically controlled via precise tuning of the exchange and anisotropy, with pathways to further scaling. Driven by current-based spin torques from the heavy-metal over-layer, some of these AFM textures could emerge as prime candidates for low-energy antiferromagnetic spintronics at room temperature. △ Less

Submitted 18 November, 2020; v1 submitted 22 June, 2020; originally announced June 2020.

Comments: 18 pages, 4 figures

Journal ref: Nature 590, 74 (2021)

Topological Hall Effect and Skyrmion-like Bubbles at a Charge-transfer Interface

Authors: Zhi Shiuh Lim, Changjian Li, Zhen Huang, Xiao Chi, Jun Zhou, Shengwei Zeng, Ganesh Ji Omar, Yuan Ping Feng, Andrivo Rusydi, Stephen John Pennycook, Thirumalai Venkatesan, Ariando Ariando

Abstract: Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-… ▽ More Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-like magnetic bubbles; but the debated alternative interpretation where the signal being an artefact between two cancelling Anomalous Hall Effect loops is also discussed. Firstly, by tilting the magnetic field direction, the evolution of Hall signal suggests transformation of the bubbles topology into a more trivial kind. Secondly, by varying the thickness of CaMnO3, the optimal thicknesses for the hump signal emergence are found, suggesting a tuning of charge transfer fraction. Using high-resolution transmission electron microscopy, a stacking fault is also identified, which distinguishes the top and bottom CaMnO3/CaIrO3 interfaces in terms of charge transfer fraction and possible interfacial Dzyaloshinskii-Moriya Interaction. Finally, a spin-transfer torque experiment revealed a low threshold current density of ~10^9 A/m^2 for initiating the motion of bubbles. This discovery opens a possible route for integrating Skyrmions with antiferromagnetic spintronics. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Comments: Keywords: Charge transfer, Spin-orbit coupling, Topological Hall Effect, CaIrO3, Skyrmion-like bubbles

Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures

Authors: T. S. Suraj, Ganesh Ji Omar, Hariom Jani, Muhammad Mangattuchali Juvaid, Sonu Hooda, Anindita Chaudhuri, Andrivo Rusydi, Kanikrishnan Sethupathi, Thirumalai Venkatesan, Ariando Ariando, Mamidanna Sri Ramachandra Rao

Abstract: Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a novel platform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3 (3d-5d oxide) interfaces by tuning the LaMnO3 growth conditions which controls the lattice displaceme… ▽ More Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a novel platform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3 (3d-5d oxide) interfaces by tuning the LaMnO3 growth conditions which controls the lattice displacement and spin-correlated interfacial coupling through charge transfer. We report on a tunable and enhanced interface-induced Rashba spin-orbit coupling and Elliot-Yafet spin relaxation mechanism in LaMnO3/SrIrO3 bilayer with change in the underlying magnetic order of LaMnO3. We also observed enhanced spin-orbit coupling strength in LaMnO3/SrIrO3 compared to previously reported SrIrO3 layers. The X-Ray spectroscopy measurement reveals the quantitative valence of Mn and their impact on charge transfer. Further, we performed angle-dependent magnetoresistance measurements, which show signatures of magnetic proximity effect in SrIrO3 while reflecting the magnetic order of LaMnO3. Our work thus demonstrates a new route to engineer the interface induced Rashba spin-orbit coupling and magnetic proximity effect in 3d-5d oxide interfaces which makes SrIrO3 an ideal candidate for spintronics applications. △ Less

Submitted 1 April, 2020; originally announced April 2020.

Comments: 10 Pages, 4 Figures

Journal ref: Phys. Rev. B 102, 125145 (2020)

Characteristic Lengths of Interlayer Charge-Transfer in Correlated Oxide Heterostructures

Authors: Ganesh Ji Omar, Mengsha Li, Xiao Chi, Zhen Huang, Zhi Shiuh Lim, Saurav Prakash, Shengwei Zeng, Changjian Li, Xiaojiang Yu, Chunhua Tang, Dongsheng Song, Andrivo Rusydi, Thirumalai Venkatesan, Stephen John Pennycook, Ariando Ariando

Abstract: Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3… ▽ More Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3 systems, resulting in modulation of interfacial carrier density and hence metal-to-insulator transition. For amorphous and crystalline LaAlO3/SrTiO3 heterostructures, the metal-to-insulator transition is found when the LaFeO3 layer thickness crosses 3 and 6 unit cells, respectively. Such different critical LaFeO3 thicknesses are explained in terms of distinct characteristic lengths of the redox-reaction-mediated and polar-catastrophe-dominated charge transfer, controlled by the interfacial atomic contact and Thomas-Fermi screening effect, respectively. Our results not only shed light on the complex interlayer charge transfer across oxide heterostructures but also provides a new route to precisely tailor the charge-transfer process at a functional interface. △ Less

Submitted 24 March, 2020; originally announced March 2020.

Comments: 40 Pages, 14 Figures, 1 Table

Journal ref: Nano Lett. 2020, 20, 4, 2493-2499

Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Authors: Maxim Trushin, Soumya Sarkar, Sinu Mathew, Sreetosh Goswami, Prasana Sahoo, Yan Wang, Jieun Yang, Weiwei Li, Judith L. MacManus-Driscoll, Manish Chhowalla, Shaffique Adam, T. Venkatesan

Abstract: Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich ap… ▽ More Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS$_2$ and the bulk transition metal oxide SrTiO$_3$. The low-temperature {binding energy} changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode. △ Less

Submitted 12 August, 2020; v1 submitted 20 November, 2019; originally announced November 2019.

Comments: 5+ pages (4 figures) + Suppl. Materials (7 figures), to appear in Phys. Rev. Lett. (August 2020)

Journal ref: Phys. Rev. Lett. 125, 086803 (2020)

Dielectric Resonator Method For Determining Gap Symmetry Of Superconductors Through Anisotropic Nonlinear Meissner Effect

Authors: Seokjin Bae, Yuewen Tan, Alexander P Zhuravel, Lingchao Zhang, Shengwei Zeng, Yong Liu, Thomas A. Lograsso, Ariando T. Venkatesan, Steven M. Anlage

Abstract: We present a new measurement method which can be used to image gap nodal structure of superconductors whose pairing symmetry is under debate. This technique utilizes a high quality factor microwave resonance involving the sample of interest. While supporting a circularly symmetric standing wave current pattern, the sample is perturbed by a scanned laser beam, creating a photoresponse that was prev… ▽ More We present a new measurement method which can be used to image gap nodal structure of superconductors whose pairing symmetry is under debate. This technique utilizes a high quality factor microwave resonance involving the sample of interest. While supporting a circularly symmetric standing wave current pattern, the sample is perturbed by a scanned laser beam, creating a photoresponse that was previously shown to reveal the superconducting gap anisotropy. Simulation and the measurement of the photoresponse of an unpatterned Nb film show less than 8\% anisotropy, as expected for a superconductor with nearly isotropic energy gap along with expected systematic uncertainty. On the other hand, measurement of a YBa$_2$Cu$_3$O$_{7-δ}$ thin film shows a clear 4-fold symmetric image with $\mathtt{\sim}12.5$\% anisotropy, indicating the well-known 4-fold symmetric $d_{x^2-y^2}$ gap nodal structure in the $ab$-plane. The deduced gap nodal structure can be further cross-checked by low temperature surface impedance data, which is simultaneously measured. The important advantage of the presented method over the previous spiral resonator method is that it does not require a complicated lithographic patterning process which limits one from testing various kinds of materials due to photoresponse arising from patterning defects. This advantage of the presented technique, and the ability to measure unpatterned samples such as planar thin films and single crystals, enables one to survey the pairing symmetry of a wide variety of unconventional superconductors. △ Less

Submitted 3 April, 2019; v1 submitted 25 January, 2019; originally announced January 2019.

Comments: 11 pages, 10 figures

Journal ref: Rev. Sci. Instrum. 90, 043901 (2019)

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces

Authors: S. W. Zeng, X. M. Yin, T. S. Herng, K. Han, Z. Huang, L. C. Zhang, C. J. Li, W. X. Zhou, D. Y. Wan, P. Yang, J. Ding, A. T. S. Wee, J. M. D. Coey, T. Venkatesan, A. Rusydi, A. Ariando

Abstract: Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and La… ▽ More Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 5 figures; Supplementary materials included at the end of the main text

Journal ref: Physical Review Letters, October 05, 2018

Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range… ▽ More The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range of magnetic field and temperature. Here we review all the phenomena that can contribute to transport in SrTiO$_3$-based conducting interfaces at low temperatures, and discuss possible ways to distinguish between various phenomena. We apply this analysis to the magnetoresistance data of (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/STO (LSAT/STO) heterostructures in perpendicular field, and find an excess negative magnetoresistance contribution which cannot be explained by weak localization alone. We argue that contributions from magnetic scattering as well as electron-electron interactions can provide a possible explanation for the observed magnetoresistance. △ Less

Submitted 1 March, 2018; originally announced March 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 99, 035408 (2019)

Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas, which can display a variety of coexisting and competing phenomena. In the case of heterointerfaces based on SrTiO$_3$, many of these phenomena can be effectively… ▽ More Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas, which can display a variety of coexisting and competing phenomena. In the case of heterointerfaces based on SrTiO$_3$, many of these phenomena can be effectively tuned by using an electric gate, due to the large dielectric constant of SrTiO$_3$. Most studies so far have focused on (001) oriented heterostructures; however, (111) oriented heterostructures have recently gained attention due to the possibility of finding exotic physics in these systems due their hexagonal surface crystal symmetry. In this work, we use magnetoresistance to study the evolution of spin-orbit interaction and magnetism in a new system, (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$. At more positive values of the gate voltage, which correspond to high carrier densities, we find that transport is multiband, and dominated by high mobility carriers with a tendency towards weak localization. At more negative gate voltages, the carrier density is reduced, the high mobility bands are depopulated, and weak antilocalization effects begin to dominate, indicating that spin-orbit interaction becomes stronger. At millikelvin temperatures, and gate voltages corresponding to the strong spin-orbit regime, we observe hysteresis in magnetoresistance, indicative of ferromagnetism in the system. Our results suggest that in the (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ system, low mobility carriers which experience strong spin-orbit interactions participate in creating magnetic order in the system. △ Less

Submitted 11 March, 2018; v1 submitted 14 November, 2017; originally announced November 2017.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. B 98, 085416 (2018)

Large polaron evolution in anatase TiO2 due to carrier and temperature dependence of electron-phonon coupling

Authors: B. X. Yan, D. Y. Wan, X. Chi, C. J. Li, M. R. Motapothula, S. Hooda, P. Yang, Z. Huang, S. W. Zeng, A. Gadekar, S. J. Pennycook, A. Rusydi, Ariando, J. Martin, T. Venkatesan

Abstract: The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual depende… ▽ More The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual dependence. We also find that the magnetoresistance (MR) could be decomposed into a linear and a quadratic component, separately characterizing the transport and trap behavior of carriers as a function of temperature. The various transport behaviors could be organized into a single phase diagram which clarifies the nature of large polaron in this material. △ Less

Submitted 5 March, 2023; v1 submitted 11 November, 2017; originally announced November 2017.

Room Temperature Giant Charge-to-Spin Conversion at SrTiO3/LaAlO3 Oxide Interface

Authors: Yi Wang, Rajagopalan Ramaswamy, M. Motapothula, Kulothungasagaran Narayanapillai, Dapeng Zhu, Jiawei Yu, T. Venkatesan, Hyunsoo Yang

Abstract: Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced… ▽ More Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ~6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Comments: 16 pages, 4 figures

The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics

Authors: Lingchao Zhang, Shengwei Zeng, Xinmao Yin, Teguh Citra Asmara, Ping Yang, Kun Han, Yu Cao, Wenxiong Zhou, Dongyang Wan, Chi Sin Tang, Andrivo Rusydi, Ariando, Thirumalai Venkatesan

Abstract: Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controver… ▽ More Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific. △ Less

Submitted 4 October, 2017; originally announced October 2017.

Comments: 4 figures; Supporting Information included at the end of the main text

Journal ref: ACS Nano, September 25, 2017

Control of magnetic anisotropy by orbital hybridization in (La0.67Sr0.33MnO3)n/(SrTiO3)n superlattice

Authors: Bangmin Zhang, Lijun Wu, Jincheng Zheng, Ping Yang, Xiaojiang Yu, Jun Ding, Steve M. Heald, R. A. Rosenberg, T. Venkatesan, Jingsheng Chen, Cheng-Jun Sun, Yimei Zhu, Gan Moog Chow

Abstract: The asymmetry of chemical nature at the hetero-structural interface offers an unique opportunity to design desirable electronic structure by controlling charge transfer and orbital hybridization across the interface. However, the control of hetero-interface remains a daunting task. Here, we report the modulation of interfacial coupling of (La0.67Sr0.33MnO3)n/(SrTiO3)n superlattices by manipulating… ▽ More The asymmetry of chemical nature at the hetero-structural interface offers an unique opportunity to design desirable electronic structure by controlling charge transfer and orbital hybridization across the interface. However, the control of hetero-interface remains a daunting task. Here, we report the modulation of interfacial coupling of (La0.67Sr0.33MnO3)n/(SrTiO3)n superlattices by manipulating the periodic thickness with n unit cells of SrTiO3 and n unit cells La0.67Sr0.33MnO3. The easy axis of magnetic anisotropy rotates from in-plane (n = 10) to out-of-plane (n = 2) orientation at 150 K. Transmission electron microscopy reveals enlarged tetragonal ratio > 1 with breaking of volume conservation around the (La0.67Sr0.33MnO3)n/(SrTiO3)n interface, and electronic charge transfer from Mn to Ti 3d orbitals across the interface. Orbital hybridization accompanying the charge transfer results in preferred occupancy of 3d3z2-r2 orbital at the interface, which induces a stronger electronic hopping integral along the out-of-plane direction and corresponding out-of-plane magnetic easy axis for n = 2. We demonstrate that interfacial orbital hybridization in superlattices of strongly correlated oxides may be a promising approach to tailor electronic and magnetic properties in device applications. △ Less

Submitted 12 September, 2017; originally announced September 2017.

Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures

Authors: Zuhuang Chen, Zhanghui Chen, Z. Q. Liu, M. E. Holtz, C. J. Li, X. Renshaw Wang, W. M. Lv, M. Motapothula, L. S. Fan, J. A. Turcaud, L. R. Dedon, C. Frederick, R. J. Xu, R. Gao, A. T. NDiaye, E. Arenholz, J. A. Mundy, T. Venkatesan, D. A. Muller, L. -W. Wang, J. Liu, L. W. Martin

Abstract: Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy an… ▽ More Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron over-accumulation. In turn, by controlling the doping of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: Accepted by Phys. Rev. Lett

Signatures of Electronic Nematicity in (111) LaAlO$_3$/SrTiO$_3$ Interfaces

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Symmetry breaking is a fundamental concept in condensed matter physics whose presence often heralds new phases of matter. For instance, the breaking of time reversal symmetry is traditionally linked to magnetic phases in a material, while the breaking of gauge symmetry can lead to superfluidity/superconductivity. Nematic phases are phases in which rotational symmetry is broken while maintaining tr… ▽ More Symmetry breaking is a fundamental concept in condensed matter physics whose presence often heralds new phases of matter. For instance, the breaking of time reversal symmetry is traditionally linked to magnetic phases in a material, while the breaking of gauge symmetry can lead to superfluidity/superconductivity. Nematic phases are phases in which rotational symmetry is broken while maintaining translational symme- try, and are traditionally associated with liquid crystals. Electronic nematic states where the or- thogonal in-plane crystal directions have different electronic properties have garnered a great deal of attention after their discovery in Sr$_3$Ru$_2$O$_7$, multiple iron based superconductors, and in the superconducting state of CuBiSe. Here we demonstrate the existence of an electronic ne- matic phase in the two-dimensional carrier gas that forms at the (111) LaAlO$_3$ (LAO)/SrTiO$_3$ (STO) interface that onsets at low temperatures, and is tunable by an electric field. △ Less

Submitted 28 August, 2017; v1 submitted 16 August, 2017; originally announced August 2017.

Comments: 6 pages 3 figures

Journal ref: Phys. Rev. B 97, 041408 (2018)

Experimental study of extrinsic spin Hall effect in CuPt alloy

Authors: Rajagopalan Ramaswamy, Yi Wang, Mehrdad Elyasi, M. Motapothula, T. Venkatesan, Xuepeng Qiu, Hyunsoo Yang

Abstract: We have experimentally studied the effects on the spin Hall angle due to systematic addition of Pt into the light metal Cu. We perform spin torque ferromagnetic resonance measurements on Py/CuPt bilayer and find that as the Pt concentration increases, the spin Hall angle of CuPt alloy increases. Moreover, only 28% Pt in CuPt alloy can give rise to a spin Hall angle close to that of Pt. We further… ▽ More We have experimentally studied the effects on the spin Hall angle due to systematic addition of Pt into the light metal Cu. We perform spin torque ferromagnetic resonance measurements on Py/CuPt bilayer and find that as the Pt concentration increases, the spin Hall angle of CuPt alloy increases. Moreover, only 28% Pt in CuPt alloy can give rise to a spin Hall angle close to that of Pt. We further extract the spin Hall resistivity of CuPt alloy for different Pt concentrations and find that the contribution of skew scattering is larger for lower Pt concentrations, while the side-jump contribution is larger for higher Pt concentrations. From technological perspective, since the CuPt alloy can sustain high processing temperatures and Cu is the most common metallization element in the Si platform, it would be easier to integrate the CuPt alloy based spintronic devices into existing Si fabrication technology. △ Less

Submitted 29 July, 2017; originally announced July 2017.

Comments: Accepted for publication in Physical Review Applied

Journal ref: Phys. Rev. Applied 8 (2017) 024034

Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface

Authors: Kulothungasagaran Narayanapillai, Gyungchoon Go, Rajagopalan Ramaswamy, Kalon Gopinadhan, Dongwook Go, Hyun-Woo Lee, Thirumalai Venkatesan, Kyung-Jin Lee, Hyunsoo Yang

Abstract: We report the angular dependence of magnetoresistance in two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface. We find that this interfacial magnetoresistance exhibits a similar angular dependence to the spin Hall magnetoresistance observed in ferromagnet/heavy metal bilayers, which has been so far discussed in the framework of bulk spin Hall effect of heavy metal layer. The observed magn… ▽ More We report the angular dependence of magnetoresistance in two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface. We find that this interfacial magnetoresistance exhibits a similar angular dependence to the spin Hall magnetoresistance observed in ferromagnet/heavy metal bilayers, which has been so far discussed in the framework of bulk spin Hall effect of heavy metal layer. The observed magnetoresistance is in qualitative agreement with theoretical model calculation including both Rashba spin-orbit coupling and exchange interaction. Our result suggests that magnetic interfaces subject to spin-orbit coupling can generate a nonnegligible contribution to the spin Hall magnetoresistance and the interfacial spin-orbit coupling effect is therefore key to the understanding of various spin-orbit-coupling-related phenomena in magnetic/non-magnetic bilayers. △ Less

Submitted 16 July, 2017; originally announced July 2017.

Comments: 6 pages, 4 figures

Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Rec… ▽ More Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is in the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state, and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity. △ Less

Submitted 10 July, 2017; originally announced July 2017.

Comments: 6 Pages 4 figures

Journal ref: Phys. Rev. B 96, 134502 (2017)

Electrical Properties and Subband Occupancy at the (La,Sr)(Al,Ta)O$_3$/SrTiO$_3$ Interface

Authors: K. Han, Z. Huang, S. W. Zeng, M. Yang, C. J. Li, W. X. Zhou, X. Renshaw Wang, T. Venkatesan, J. M. D. Coey, M. Goiran, W. Escoffier, Ariando

Abstract: The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density… ▽ More The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons ($μ_1\approx{10^4}$ cm$^2$V$^{-1}$s$^{-1}$ at 2 K) occupy the lower-energy $3d_{xy}$ subband, while lower-mobility electrons ($μ_1\approx{10^3}$ cm$^{2}$V$^{-1}$s$^{-1}$ at 2 K) propagate in the higher-energy $3d_{xz/yz}$-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas (SdH) oscillations below 9 T at 2 K and an effective mass of $0.7m_e$. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to $50,000$ cm$^{2}$V$^{-1}$s$^{-1}$ by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Comments: 22 pages, 4 figures

Journal ref: Phys. Rev. Materials 1, 011601(R) (2017)

Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of applied back gate voltage, $V_g$. As is found in (111) LaAlO$_3$/SrTiO$_3$ interfaces, the low-field Hall coefficient is electron-like, but shows a sharp reductio… ▽ More We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of applied back gate voltage, $V_g$. As is found in (111) LaAlO$_3$/SrTiO$_3$ interfaces, the low-field Hall coefficient is electron-like, but shows a sharp reduction in magnitude below $V_g \sim$ 20 V, indicating the presence of hole-like carriers in the system. This same value of $V_g$ correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO$_3$ based systems. △ Less

Submitted 2 June, 2017; originally announced June 2017.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 111, 081604 (2017)

Unravelling local spin polarization of Zhang-Rice singlet in lightly hole-doped cuprates using high-energy optical conductivity

Authors: Iman Santoso, Wei Ku, Tomonori Shirakawa, Gerd Neuber, Xinmao Yin, M. Enoki, Masaki Fujita, Ruixing Liang, T. Venkatesan, George A. Sawatzky, Aleksei Kotlov, Seiji Yunoki, Michael Rübhausen, Andrivo Rusydi

Abstract: Unrevealing local magnetic and electronic correlations in the vicinity of charge carriers is crucial in order to understand rich physical properties in correlated electron systems. Here, using high-energy optical conductivity (up to 35 eV) as a function of temperature and polarization, we observe a surprisingly strong spin polarization of the local spin singlet with enhanced ferromagnetic correlat… ▽ More Unrevealing local magnetic and electronic correlations in the vicinity of charge carriers is crucial in order to understand rich physical properties in correlated electron systems. Here, using high-energy optical conductivity (up to 35 eV) as a function of temperature and polarization, we observe a surprisingly strong spin polarization of the local spin singlet with enhanced ferromagnetic correlations between Cu spins near the doped holes in lightly hole-doped La$_{1.95}$Sr$_{0.05}$Cu$_{0.95}$Zn$_{0.05}$O$_{4}$. The changes of the local spin polarization manifest strongly in the temperature-dependent optical conductivity at ~7.2 eV, with an anomaly at the magnetic stripe phase (~25 K), accompanied by anomalous spectral-weight transfer in a broad energy range. Supported by theoretical calculations, we also assign high-energy optical transitions and their corresponding temperature dependence, particularly at ~2.5 ~8.7, ~9.7, ~11.3 and ~21.8 eV. Our result shows the importance of a strong mixture of spin singlet and triplet states in hole-doped cuprates and demonstrates a new strategy to probe local magnetic correlations using high- energy optical conductivity in correlated electron systems. △ Less

Submitted 8 April, 2017; originally announced April 2017.

Comments: 38 pages, 11 figures

Journal ref: Phys. Rev. B 95, 165108 (2017)

Superconductivity and Frozen Electronic States at the (111) LaAlO$_3$/SrTiO$_3$ Interface

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: In spite of Anderson's theorem, disorder is known to affect superconductivity in conventional s-wave superconductors. In most superconductors, the degree of disorder is fixed during sample preparation. Here we report measurements of the superconducting properties of the two-dimensional gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) in the (111) crystal orientation, a s… ▽ More In spite of Anderson's theorem, disorder is known to affect superconductivity in conventional s-wave superconductors. In most superconductors, the degree of disorder is fixed during sample preparation. Here we report measurements of the superconducting properties of the two-dimensional gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) in the (111) crystal orientation, a system that permits \emph{in situ} tuning of carrier density and disorder by means of a back gate voltage $V_g$. Like the (001) oriented LAO/STO interface, superconductivity at the (111) LAO/STO interface can be tuned by $V_g$. In contrast to the (001) interface, superconductivity in these (111) samples is anisotropic, being different along different interface crystal directions, consistent with the strong anisotropy already observed other transport properties at the (111) LAO/STO interface. In addition, we find that the (111) interface samples "remember" the backgate voltage $V_F$ at which they are cooled at temperatures near the superconducting transition temperature $T_c$, even if $V_g$ is subsequently changed at lower temperatures. The low energy scale and other characteristics of this memory effect ($<1$ K) distinguish it from charge-trapping effects previously observed in (001) interface samples. △ Less

Submitted 4 April, 2017; originally announced April 2017.

Comments: 6 pages, 5 Figures

Journal ref: Phys. Rev. B 98, 024504 (2018)

Anomalous current-induced spin torques in ferrimagnets near compensation

Authors: Rahul Mishra, Jiawei Yu, Xuepeng Qiu, M. Motapothula, T. Venkatesan, Hyunsoo Yang

Abstract: While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative exchange interaction in ferrimagnets. The effective field and switching efficiency increase substantially as CoGd approaches its compensation point, giving rise to… ▽ More While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative exchange interaction in ferrimagnets. The effective field and switching efficiency increase substantially as CoGd approaches its compensation point, giving rise to 9 times larger spin-orbit torques compared to that of non-compensated one. The macrospin modelling results also support efficient spin-orbit torques in a ferrimagnet. Our results suggest that ferrimagnets near compensation can be a new route for spin-orbit torque applications due to their high thermal stability and easy current-induced switching assisted by negative exchange interaction. △ Less

Submitted 23 March, 2017; originally announced March 2017.

The Nature of Electron Transport and visible light absorption in Strontium Niobate -- A Plasmonic Water Splitter

Authors: Dongyang Wan, Yongliang Zhao, Yao Cai, Teguh Citra Asmara, Zhen Huang, Jianqiang Chen, Jindui Hong, Christopher T. Nelson, Mallikarjuna Rao Motapothula, Bixing Yan, Rong Xu, Haimei Zheng, Ariando, Andrivo Rusydi, Andrew Minor, Mark B. H. Breese, Mark Asta, Qinghua Xu, T. Venkatesan

Abstract: Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of th… ▽ More Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of the visible light absorption in these powders was reported to be due to an interband transition and the charge carrier separation was proposed to be due to the high carrier mobility of this material. In the current work we have prepared epitaxial thin films of Sr$_{0.94}$NbO$_{3+δ}$ and found that the bandgap of this material is ~4.1 eV, which is very large. Surprisingly the carrier density of the conducting phase reaches 10$^{22}$ cm$^{-3}$, which is only one order smaller than that of elemental metals and the carrier mobility is only 2.47 cm$^2$/(V$\cdot$s). Contrary to earlier reports, the visible light absorption at 1.8 eV (~688 nm) is due to the bulk plasmon resonance, arising from the large carrier density, instead of an interband transition. Excitation of the plasmonic resonance results in a multifold enhancement of the lifetime of charge carriers. Thus we propose that the hot charge carriers generated from decay of plasmons produced by optical absorption is responsible for the water splitting efficiency of this material under visible light irradiation. △ Less

Submitted 31 July, 2016; originally announced August 2016.

Emerging giant resonant exciton induced by Ta-substitution in anatase TiO$_{2}$: a tunable correlation effect

Authors: Z. Yong, P. E. Trevisanutto, L. Chiodo, I. Santoso, A. R. Barman, T. C. Asmara, S. Dhar, A. Kotlov, A. Terentjevs, F. Della Sala, V. Olevano, M. Rübhausen, T. Venkatesan, A. Rusydi

Abstract: Titanium dioxide (TiO$_2$) has rich physical properties with potential implications in both fundamental physics and new applications. Up-to-date, the main focus of applied research is to tune its optical properties, which is usually done via doping and/or nano-engineering. However, understanding the role of $d$-electrons in materials and possible functionalization of $d$-electron properties are st… ▽ More Titanium dioxide (TiO$_2$) has rich physical properties with potential implications in both fundamental physics and new applications. Up-to-date, the main focus of applied research is to tune its optical properties, which is usually done via doping and/or nano-engineering. However, understanding the role of $d$-electrons in materials and possible functionalization of $d$-electron properties are still major challenges. Herewith, within a combination of an innovative experimental technique, high energy optical conductivity, and of the state-of-the-art {\it ab initio} electronic structure calculations, we report an emerging, novel resonant exciton in the deep ultraviolet region of the optical response. The resonant exciton evolves upon low concentration Ta-substitution in anatase TiO$_{2}$ films. It is surprisingly robust and related to strong electron-electron and electron-hole interactions. The $d$- and $f$- orbitals localization, due to Ta-substitution, plays an unexpected role, activating strong electronic correlations and dominating the optical response under photoexcitation. Our results shed light on a new optical phenomenon in anatase TiO$_{2}$ films and on the possibility of tuning electronic properties by Ta substitution. △ Less

Submitted 22 May, 2016; originally announced May 2016.

Controlling Kondo-like Scattering at the SrTiO3-based Interfaces

Authors: K. Han, N. Palina, S. W. Zeng, Z. Huang, C. J. Li, W. X. Zhou, D-Y. Wan, L. C. Zhang, X. Chi, R. Guo, J. S. Chen, T. Venkatesan, A. Rusydi, Ariando

Abstract: The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Ko… ▽ More The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti3+ ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti3+ ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface. △ Less

Submitted 12 May, 2016; originally announced May 2016.

Comments: 25 pages, 5 figure

Journal ref: Scientific Reports 6, 25455 (2016)

High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3

Authors: Ming Yang, Mathieu Pierre, Olivier Toressin, Michel Goiran, Walter Escoffier, Shengwei Zeng, Zhen Huang, Han Kun, Thirumalai Venkatesan, Ariando, Michael Coey

Abstract: Transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under high magnetic field (55T). By rotating the sample with respect to the magnetic field, the two-dimensional nature of charge transport is clearly established. Small oscillations of the agnetoresistance with altered periodicity are observed when plotted versus inverse magnetic field. We attribute this effect to R… ▽ More Transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under high magnetic field (55T). By rotating the sample with respect to the magnetic field, the two-dimensional nature of charge transport is clearly established. Small oscillations of the agnetoresistance with altered periodicity are observed when plotted versus inverse magnetic field. We attribute this effect to Rashba spin-orbit coupling which remains consistent with large negative magnetoresistance when the field is parallel to the sample plane. A large inconsistency between the carrier density extracted from Shubnikov-de Haas analysis and from the Hall effect is explained by the contribution to transport of at least two bands with different mobility. △ Less

Submitted 12 April, 2016; originally announced April 2016.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 109, 122106 (2016)

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Authors: Shengwei Zeng, Weiming Lü, Zhen Huang, Zhiqi Liu, Kun Han, Kalon Gopinadhan, Changjian Li, Rui Guo, Wenxiong Zhou, Haijiao Harsan Ma, Linke Jian, T Venkatesan, Ariando

Abstract: Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-as… ▽ More Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm$^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect. △ Less

Submitted 28 March, 2016; originally announced March 2016.

Comments: 22 pages, 4 figures, ACS Nano, March 09, 2016

Anisotropic, multi-carrier transport at the (111) LaAlO$_3$/SrTiO$_3$ interface

Authors: Samuel Davis, V. Chandrasekhar, Z. Huang, K. Han, Ariando, T. Venkatesan

Abstract: The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature ele… ▽ More The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic, in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger, and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures, but only at liquid helium temperatures and below. The anisotropy is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low-temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport. △ Less

Submitted 22 August, 2016; v1 submitted 14 March, 2016; originally announced March 2016.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 95, 035127 (2017)

On the nature of wettability of van der Waals heterostructures

Authors: Meenakshi Annamalai, Kalon Gopinadhan, Sang A Han, Surajit Saha, Hye Jeong Park, Eun Bi Cho, Brijesh Kumar, Sang-Woo Kim, T Venkatesan

Abstract: Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In this paper, we report the wetting behaviour of vdW heterostructures which include, chemical vapor deposition (CVD) grown graphene, molybdenum disulfide (MoS2)… ▽ More Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In this paper, we report the wetting behaviour of vdW heterostructures which include, chemical vapor deposition (CVD) grown graphene, molybdenum disulfide (MoS2) and tungsten disulfide (WS2) on few layers of hexagon boron nitride (h-BN) and SiO2/Si. Our study clearly shows that while this class of two-dimensional materials are not wetting transparent, there seems to be a significant amount of influence on their wetting properties by the underlying substrate due to dominant vdW forces. Contact angle measurements indicate that graphene and graphene-like layered transitional metal dichalcogenides invariably have intrinsically dispersive surfaces with a dominating London-vdW force-mediated wettability. Electric field controlled wetting studies of MoS2/WS2/SiO2/Si heterostructures were performed and no notable changes to the water contact angle was seen with applied voltage although two orders of magnitude change in resistance was observed. We postulate that the highly dispersive nature of these surfaces arising from the predominant London-vdW forces could be the reason for such observation. △ Less

Submitted 13 December, 2015; originally announced December 2015.

Journal ref: Nanoscale 8, 5764-5770 (2016)

Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures

Authors: Kalon Gopinadhan, Young Jun Shin, Rashid Jalil, Thirumalai Venkatesan, Andre K. Geim, Antonio H. Castro Neto, Hyunsoo Yang

Abstract: Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresi… ▽ More Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistance of > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications. △ Less

Submitted 28 November, 2015; originally announced November 2015.

Journal ref: Nature Communications 6, 8337 (2015)

Emergent nanoscale superparamagnetism at oxide interfaces

Authors: Yonathan Anahory, Lior Embon, Chang Jian Li, Sumilan Banerjee, Alexander Meltzer, Hoovinakatte R. Naren, Anton Yakovenko, Jo Cuppens, Yuri Myasoedov, Michael L. Rappaport, Martin E. Huber, Karen Michaeli, Thirumalai Venkatesan, Ariando, Eli Zeldov

Abstract: Atomically sharp oxide heterostructures exhibit a range of novel physical phenomena that do not occur in the parent bulk compounds. The most prominent example is the appearance of highly conducting and superconducting states at the interface between the band insulators LaAlO3 and SrTiO3. Here we report a new emergent phenomenon at the LaMnO3/SrTiO3 interface in which an antiferromagnetic insulator… ▽ More Atomically sharp oxide heterostructures exhibit a range of novel physical phenomena that do not occur in the parent bulk compounds. The most prominent example is the appearance of highly conducting and superconducting states at the interface between the band insulators LaAlO3 and SrTiO3. Here we report a new emergent phenomenon at the LaMnO3/SrTiO3 interface in which an antiferromagnetic insulator abruptly transforms into a magnetic state that exhibits unexpected nanoscale superparamagnetic dynamics. Upon increasing the thickness of LaMnO3 above five unit cells, our scanning nanoSQUID-on-tip microscopy shows spontaneous formation of isolated magnetic islands of 10 to 50 nm diameter, which display random moment reversals by thermal activation or in response to an in-plane magnetic field. Our charge reconstruction model of the polar LaMnO3/SrTiO3 heterostructure describes the sharp emergence of thermodynamic phase separation leading to nucleation of metallic ferromagnetic islands in an insulating antiferromagnetic matrix. The model further suggests that the nearby superparamagnetic-ferromagnetic transition can be gate tuned, holding potential for applications in magnetic storage and spintronics. △ Less

Submitted 7 September, 2015; originally announced September 2015.

Journal ref: Nature Communications 7,12566 (2016)

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Authors: Z. Huang, K. Han, S. W. Zeng, M. Motapothula, W. M. Lü, C. J. Li, W. X. Zhou, J. M. D. Coey, T. Venkatesan, Ariando

Abstract: Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35… ▽ More Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm2V-1s-1. Moreover, two critical thicknesses for the LSAT/SrTiO3 (001) interface are found: one at 5 unit cell for appearance of the 2DEG, the other at 12 unit cell for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimise the 2DEG transport. △ Less

Submitted 7 July, 2015; originally announced July 2015.

Comments: 17 pages, 4 figures

Journal ref: Nano Letters, March 09, 2016

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

Authors: S. W. Zeng, Z. Huang, W. M. Lv, N. N. Bao, K. Gopinadhan, L. K. Jian, T. S. Herng, Z. Q. Liu, Y. L. Zhao, C. J. Li, H. J. Harsan Ma, P. Yang, J. Ding, T. Venkatesan, Ariando

Abstract: We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by ele… ▽ More We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs. △ Less

Submitted 7 July, 2015; originally announced July 2015.

Comments: Manuscript including supplementary materials

Journal ref: Physical Review B 92, 020503(R) (2015)

Graphene Nanobubble: A New Optical Nonlinear Material

Authors: Qiaoliang Bao, Jianqiang Chen, Yuanjiang Xiang, Kai Zhang, Shaojuan Li, Xiaofang Jiang, Qing-Hua Xu, Kian Ping Loh, T. Venkatesan

Abstract: Graphene is a rising star in nonlinear optics due to its saturable absorption and giant Kerr nonlinearity, these properties are useful in digital optics based on optical nonlinear devices. However, practical applications require large optical nonlinearities and these are inherently limited by the interaction length of atomically thin graphene. Here, we demonstrate optical bistability in a Fabry Pe… ▽ More Graphene is a rising star in nonlinear optics due to its saturable absorption and giant Kerr nonlinearity, these properties are useful in digital optics based on optical nonlinear devices. However, practical applications require large optical nonlinearities and these are inherently limited by the interaction length of atomically thin graphene. Here, we demonstrate optical bistability in a Fabry Perot cavity containing monolayer and bilayer graphene which have been restructured to form nanobubbles. We find that graphene nanobubble can act as a new type of optical nonlinear media due to its vertical side wall as well as added curvature, which enable strong non linear dispersive effects leading to a large optically induced phase change. Unlike thermally induced bistability, the all optical switching between two transmission states happens within a time scale of tens of nanoseconds. Nanobubble based optical devices with intrinsic optical nonlinearity help to overcome the optical path length limitation of atomically thin two dimensional films and allow us to explore the promise of using such elements as the building block of digital all-optical circuitry. △ Less

Submitted 23 June, 2015; originally announced June 2015.

Comments: 17 pages, 4 figures

Mechanisms of charge transfer and redistribution in LaAlO3/SrTiO3 revealed by high-energy optical conductivity

Authors: T. C. Asmara, A. Annadi, I. Santoso, P. K. Gogoi, A. Kotlov, H. M. Omer, M. Motapothula, M. B. H. Breese, M. Rübhausen, T. Venkatesan, Ariando, A. Rusydi

Abstract: In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on non-polar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness-dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5 electron from the LaAlO3 film into the LaAlO3/Sr… ▽ More In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on non-polar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness-dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5 electron from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (more than 4 unit cells of LaAlO3) there is indeed a 0.5 electron transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying the optical conductivity in a broad energy range (0.5-35 eV). Surprisingly, in insulating samples (less than 4 unit cells of LaAlO3) a redistribution of charges within the polar LaAlO3 sub-layers (from AlO2 to LaO) as large as 0.5 electron is observed, with no charge transfer into the interface. Hence, our results reveal the different mechanisms for the polarization catastrophe compensation in insulating and conducting LaAlO3/SrTiO3 interfaces. △ Less

Submitted 4 December, 2014; originally announced December 2014.

Comments: Main Article (33 pages, 7 figures, 1 table); Supplementary Materials (19 pages, 8 figures)

Journal ref: Nature Communications 5, 3663 (2014)

Optical conductivity renormalization of graphene on SrTiO$_{3}$ due to resonant excitonic effects mediated by Ti 3\textit{d} orbitals

Authors: Pranjal Kumar Gogoi, Paolo E. Trevisanutto, Ming Yang, Iman Santoso, Teguh Citra Asmara, Aleksandrs Terentjevs, Fabio Della Sala, Mark B. H. Breese, T. Venkatesan, Yuan Ping Feng, Kian Ping Loh, Antonio H. Castro Neto, Andrivo Rusydi

Abstract: We present evidence of a drastic renormalization of the optical conductivity of graphene on SrTiO$_3$ resulting in almost full transparency in the ultraviolet region. These findings are attributed to resonant excitonic effects further supported by \emph{ab initio} Bethe-Salpeter equation and density functional theory calculations. The ($π$,$π$*)-orbitals of graphene and Ti-3\textit{d} $t_{2g}$ orb… ▽ More We present evidence of a drastic renormalization of the optical conductivity of graphene on SrTiO$_3$ resulting in almost full transparency in the ultraviolet region. These findings are attributed to resonant excitonic effects further supported by \emph{ab initio} Bethe-Salpeter equation and density functional theory calculations. The ($π$,$π$*)-orbitals of graphene and Ti-3\textit{d} $t_{2g}$ orbitals of SrTiO$_3$ are strongly hybridized and the interactions of electron-hole states residing in those orbitals play dominant role in the graphene optical conductivity. These interactions are present much below the optical band gap of bulk SrTiO$_3$. These results open a possibility of manipulating interaction strengths in graphene via \textit {d}-orbitals which could be crucial for optical applications. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Comments: 9 pages, 11 figures, Phys. Rev. B (accepted)

Journal ref: Phys. Rev. B 91, 035424 (2015)

Static and Ultrafast Dynamics of Defects of SrTiO3 in LaAlO3/SrTiO3 Heterostructures

Authors: X. Renshaw Wang, J. Q. Chen, A. Roy Barman, S. Dhar, Q. -H. Xu, T. Venkatesan, Ariando

Abstract: A detailed defect energy level map was investigated for heterostructures of 26 unit cells of LaAlO3 on SrTiO3 prepared at a low oxygen partial pressure of 10-6 mbar. The origin is attributed to the presence of dominating oxygen defects in SrTiO3 substrate. Using femtosecond laser spectroscopy, the transient absorption and relaxation times for various transitions were determined. An ultrafast relax… ▽ More A detailed defect energy level map was investigated for heterostructures of 26 unit cells of LaAlO3 on SrTiO3 prepared at a low oxygen partial pressure of 10-6 mbar. The origin is attributed to the presence of dominating oxygen defects in SrTiO3 substrate. Using femtosecond laser spectroscopy, the transient absorption and relaxation times for various transitions were determined. An ultrafast relaxation process of 2-3 picosecond from the conduction band to the closest defect level and a slower process of 70-92 picosecond from conduction band to intra-band defect level were observed. The results are discussed on the basis of propose defect-band diagram. △ Less

Submitted 3 November, 2014; originally announced November 2014.

Comments: 11 pages, 4 figures

Journal ref: Applied Physics Letters 98, 081916, 2011

Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures

Authors: Kulothungasagaran Narayanapillai, Kalon Gopinadhan, Xuepeng Qiu, Anil Annadi, Ariando, Thirumalai Venkatesan, Hyunsoo Yang

Abstract: We demonstrate a current tunable Rashba spin orbit interaction in LaAlO3/SrTiO3 (LAO/STO) quasi two dimensional electron gas (2DEG) system. Anisotropic magnetoresistance (AMR) measurements are employed to detect and understand the current-induced Rashba field. The effective Rashba field scales with the current and a value of 2.35 T is observed for a dc-current of 200 uA. The results suggest that L… ▽ More We demonstrate a current tunable Rashba spin orbit interaction in LaAlO3/SrTiO3 (LAO/STO) quasi two dimensional electron gas (2DEG) system. Anisotropic magnetoresistance (AMR) measurements are employed to detect and understand the current-induced Rashba field. The effective Rashba field scales with the current and a value of 2.35 T is observed for a dc-current of 200 uA. The results suggest that LAO/STO heterostructures can be considered for spin orbit torque based magnetization switching. △ Less

Submitted 2 October, 2014; originally announced October 2014.

Imaging and Control of Ferromagnetism in a Polar Antiferromagnet

Authors: X. Renshaw Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, Nicola Poccia, Arturas Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, H. Hilgenkamp

Abstract: Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase… ▽ More Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase transition when atomically growing polar antiferromagnetic LaMnO3 (001) films on SrTiO3 substrates. For a thickness of five unit cells or less, the films are antiferromagnetic, but for six unit cells or more, the LaMnO3 film undergoes a phase transition to a ferromagnetic state over its entire area, which is visualized by scanning superconducting quantum interference device microscopy. The transition is explained in terms of electronic reconstruction originating from the polar nature of the LaMnO3 (001) films. Our results demonstrate how new emergent functionalities can be visualized and engineered in atomically thick oxide films at the atomic level. △ Less

Submitted 1 September, 2014; originally announced September 2014.