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Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach
Authors:
Curran Kalha,
Michael Reisinger,
Pardeep. K. Thakur,
Tien-Lin Lee,
Sriram Venkatesan,
Mark Isaacs,
Robert G. Palgrave,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of ti…
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Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ($\geq$400$^\circ$C). Here, the thermal stability of physical vapour deposited (PVD) TiW/Cu bilayer thin films in Si/SiO\textsubscript{2}(50~nm)/TiW(300~nm)/Cu(25~nm) stacks were characterised in response to annealing at 400$^\circ$C for 0.5~h and 5~h, using a combination of soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) and transmission electron microscopy (TEM). Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallisation. Titanium was shown be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity and the TiW/Cu interface remains stable even after 5~h of annealing.
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Submitted 20 January, 2022;
originally announced January 2022.
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Megahertz-rate Ultrafast X-ray Scattering and Holographic Imaging at the European XFEL
Authors:
Nanna Zhou Hagström,
Michael Schneider,
Nico Kerber,
Alexander Yaroslavtsev,
Erick Burgos Parra,
Marijan Beg,
Martin Lang,
Christian M. Günther,
Boris Seng,
Fabian Kammerbauer,
Horia Popescu,
Matteo Pancaldi,
Kumar Neeraj,
Debanjan Polley,
Rahul Jangid,
Stjepan B. Hrkac,
Sheena K. K. Patel,
Sergei Ovcharenko,
Diego Turenne,
Dmitriy Ksenzov,
Christine Boeglin,
Igor Pronin,
Marina Baidakova,
Clemens von Korff Schmising,
Martin Borchert
, et al. (75 additional authors not shown)
Abstract:
The advent of X-ray free-electron lasers (XFELs) has revolutionized fundamental science, from atomic to condensed matter physics, from chemistry to biology, giving researchers access to X-rays with unprecedented brightness, coherence, and pulse duration. All XFEL facilities built until recently provided X-ray pulses at a relatively low repetition rate, with limited data statistics. Here, we presen…
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The advent of X-ray free-electron lasers (XFELs) has revolutionized fundamental science, from atomic to condensed matter physics, from chemistry to biology, giving researchers access to X-rays with unprecedented brightness, coherence, and pulse duration. All XFEL facilities built until recently provided X-ray pulses at a relatively low repetition rate, with limited data statistics. Here, we present the results from the first megahertz repetition rate X-ray scattering experiments at the Spectroscopy and Coherent Scattering (SCS) instrument of the European XFEL. We illustrate the experimental capabilities that the SCS instrument offers, resulting from the operation at MHz repetition rates and the availability of the novel DSSC 2D imaging detector. Time-resolved magnetic X-ray scattering and holographic imaging experiments in solid state samples were chosen as representative, providing an ideal test-bed for operation at megahertz rates. Our results are relevant and applicable to any other non-destructive XFEL experiments in the soft X-ray range.
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Submitted 20 January, 2022; v1 submitted 17 January, 2022;
originally announced January 2022.
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Network approach towards understanding the crazing in glassy amorphous polymers
Authors:
Sudarkodi Venkatesan,
R. P. Vivek-Ananth,
R. P. Sreejith,
P. Mangalapandi,
Ali A. Hassanali,
Areejit Samal
Abstract:
We have used molecular dynamics to simulate an amorphous glassy polymer with long chains to study deformation mechanism of crazing and associated void statistics. The Van der Waals interactions and the entanglements between chains constituting the polymer play a crucial role in crazing. Thus, we have reconstructed two underlying weighted networks, namely, the Van der Waals network and the Entangle…
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We have used molecular dynamics to simulate an amorphous glassy polymer with long chains to study deformation mechanism of crazing and associated void statistics. The Van der Waals interactions and the entanglements between chains constituting the polymer play a crucial role in crazing. Thus, we have reconstructed two underlying weighted networks, namely, the Van der Waals network and the Entanglement network from polymer configurations extracted from the molecular dynamics simulation. Subsequently, we have performed graph-theoretic analysis of the two reconstructed networks to reveal the role played by them in crazing of polymers. Our analysis captured various stages of crazing through specific trends in the network measures for Van der Waals networks and entanglement networks. To further corroborate the effectiveness of network analysis in unraveling the underlying physics of crazing in polymers, we have contrasted the trends in network measures for Van der Waals networks and entanglement networks in the light of stress-strain behaviour and voids statistics during deformation. We find that Van der Waals network plays a crucial role in craze initiation and growth. Although, the entanglement network was found to maintain its structure during craze initiation stage, it was found to progressively weaken and undergo dynamic changes during the hardening and failure stages of crazing phenomena. Our work demonstrates the utility of network theory in quantifying the underlying physics of polymer crazing and widens the scope of applications of network science to characterization of deformation mechanisms in diverse polymers.
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Submitted 5 October, 2017;
originally announced October 2017.
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Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires
Authors:
Sriram Venkatesan,
Morten H. Madsen,
Herbert Schmid,
Peter Krogstrup,
Erik Johnson,
Christina Scheu
Abstract:
Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments…
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Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.
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Submitted 23 August, 2013;
originally announced August 2013.
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Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface
Authors:
S. Parui,
P. S. Klandermans,
S. Venkatesan,
C. Scheu,
T. Banerjee
Abstract:
Hot electron transport of direct and scattered carriers across an epitaxial NiSi_2/n-Si(111) interface, for different NiSi_2 thickness, is studied using Ballistic Electron Emission Microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi_2 to be significantly lower than that for the direct hot electrons, for all thicknesses. Interestingly, the attenuation length of…
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Hot electron transport of direct and scattered carriers across an epitaxial NiSi_2/n-Si(111) interface, for different NiSi_2 thickness, is studied using Ballistic Electron Emission Microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi_2 to be significantly lower than that for the direct hot electrons, for all thicknesses. Interestingly, the attenuation length of the scattered hot electrons is found to be twice larger than that of the direct hot electrons. The lower BEEM transmission for the scattered hot electrons is due to inelastic scattering of the injected hot holes while the larger attenuation length of the scattered hot electrons is a consequence of the differences in the energy distribution of the injected and scattered hot electrons and the increasing attenuation length, at lower energies, of the direct hot electrons in NiSi_2.
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Submitted 21 February, 2013;
originally announced February 2013.
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Domain wall magnetism in thin films of orthorhombic manganites
Authors:
Christophe J. M. Daumont,
Sriram Venkatesan,
Bart J. Kooi,
Jeff Th. M. De Hosson,
Beatriz Noheda
Abstract:
Thin films of orthorhombic TbMnO3, as well as other orthorhombic manganites, epitaxially grown on cubic SrTiO3 substrates display an induced magnetic moment that is absent in the bulk (antiferromagnetic) counterpart. Here we show that there is a clear correlation between the domain microstructure and the induced magnetic moment in TbMnO3 films on SrTiO3. In addition, the distinct dependence of the…
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Thin films of orthorhombic TbMnO3, as well as other orthorhombic manganites, epitaxially grown on cubic SrTiO3 substrates display an induced magnetic moment that is absent in the bulk (antiferromagnetic) counterpart. Here we show that there is a clear correlation between the domain microstructure and the induced magnetic moment in TbMnO3 films on SrTiO3. In addition, the distinct dependence of the magnetization with the film thickness is not consistent with domain magnetism and indicates that the domain walls, rather than the domains, are the origin of the net magnetic moment. Since the orientation of the domain walls can be designed by the film-substrate relationship and its density can be tuned with the film thickness, these results represent a significant step forward towards the design of devices based on domain wall functionality.
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Submitted 30 January, 2014; v1 submitted 2 August, 2010;
originally announced August 2010.
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Epitaxial TbMnO3 thin films on SrTiO3 substrates: A structural study
Authors:
C. J. M. Daumont,
D. Mannix,
Sriram Venkatesan,
D. Rubi,
G. Catalan,
B. J. Kooi,
J. Th. M. De Hosson,
B. Noheda
Abstract:
TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while keeping constant the in-plane compression thereby leaving the out-of-plane lattice…
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TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while keeping constant the in-plane compression thereby leaving the out-of-plane lattice spacing unchanged. The domain microstructure of the films is also revealed, showing an increasing number of orthorhombic domains as the thickness is decreased: we directly observe ferroelastic domains as narrow as 4nm. The high density of domain walls may explain the induced ferromagnetism observed in the films, while both the decreased anisotropy and the small size of the domains could account for the absence of a ferroelectric spin spiral phase.
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Submitted 11 April, 2009; v1 submitted 24 November, 2008;
originally announced November 2008.
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Magnetic and dielectric properties of YbMnO3 perovskite thin films
Authors:
D. Rubi,
Sriram Venkatesan,
B. J. Kooi,
J. Th. M. De Hosson,
T. T. M. Palstra,
B. Noheda
Abstract:
Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness do…
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Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness down to ~30nm, can be obtained showing magneto-dielectric coupling and magnetic responses as those expected for the E-phase. We observe that the magnetic properties depart from the bulk behavior only in the case of ultrathin films (d< 30nm), which display a glassy magnetic behavior. We show that strain effects alone cannot account for this difference and that the film morphology plays, instead, a crucial role.
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Submitted 10 July, 2008;
originally announced July 2008.
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Smallest 90o domains in epitaxial ferroelectric films
Authors:
A. H. G. Vlooswijk,
G. Catalan,
A. Janssens,
B. Barcones,
S. Venkatesan,
G. Rijnders,
B. Kooi,
J. T. M de Hosson,
D. H. A. Blank,
B. Noheda
Abstract:
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed interest was partly fuelled by the observation of ferroelectric domains in films of a few unit cells thickness, promising further size reduction of ferroelectric…
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Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed interest was partly fuelled by the observation of ferroelectric domains in films of a few unit cells thickness, promising further size reduction of ferroelectric devices. It turns out that at reduced scales and dimensionalities the material's properties depend crucially on the intricacies of domain formation, that is, the way the crystal splits into regions with polarization oriented along the different energetically equivalent directions, typically at 180o and 90o from each other. Here we present a step forward in the manipulation and control of ferroelectric domains by the growth of thin films with regular self-patterned arrays of 90o domains only 7 nm wide. This is the narrowest width for 90o domains in epitaxial ferroelectrics that preserves the film lateral coherence, independently of the substrate.
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Submitted 17 June, 2007;
originally announced June 2007.
