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Hyperfine interaction and magnetoresistance in organic semiconductors
Authors:
Y. Sheng,
D. T. Nguyen,
G. Veeraraghavan,
Ö. Mermer,
M. Wohlgenannt,
U. Scherf
Abstract:
We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of th…
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We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.
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Submitted 10 February, 2006;
originally announced February 2006.
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Large magnetoresistance in $π$-conjugated semiconductor thin film devices
Authors:
Ö. Mermer,
G. Veeraraghavan,
T. L. Francis,
Y. Sheng,
D. T. Nguyen,
M. Wohlgenannt,
A. Köhler,
M. K. Al-Suti,
M. S. Khan
Abstract:
Following the recent discovery of large magnetoresistance at room temperature in polyfluorence sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The measurements were performed at different temperatures, ranging from 10K to 300K, and at magnetic fields,…
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Following the recent discovery of large magnetoresistance at room temperature in polyfluorence sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The measurements were performed at different temperatures, ranging from 10K to 300K, and at magnetic fields, $B < 100mT$. We observed large negative or positive magnetoresistance (up to 10% at 300K and 10mT) depending on material and device operating conditions. We compare the results obtained in devices made from different materials with the goal of providing a comprehensive picture of the experimental data. We discuss our results in the framework of known magnetoresistance mechanisms and find that none of the existing models can explain our results.
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Submitted 27 April, 2005;
originally announced April 2005.
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Large magnetoresistance at room-temperature in small molecular weight organic semiconductor sandwich devices
Authors:
Ö. Mermer,
G. Veeraraghavan,
T. L. Francis,
M. Wohlgenannt
Abstract:
We present an extensive study of a large, room temperature negative magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich devices in weak magnetic fields. The effect is similar to that previously discovered in polymer devices. We characterize this effect and discuss its dependence on field direction, voltage, temperature, film thickness, and electrode materials. The MR eff…
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We present an extensive study of a large, room temperature negative magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich devices in weak magnetic fields. The effect is similar to that previously discovered in polymer devices. We characterize this effect and discuss its dependence on field direction, voltage, temperature, film thickness, and electrode materials. The MR effect reaches almost 10% at fields of approximately 10 mT at room temperature. The effect shows only a weak temperature dependence and is independent of the sign and direction of the magnetic field. Measuring the devices' current-voltage characteristics, we find that the current depends on the voltage through a power-law. We find that the magnetic field changes the prefactor of the power-law, whereas the exponent remains unaffected. We also studied the effect of the magnetic field on the electroluminescence (MEL) of the devices and analyze the relationship between MR and MEL. We find that the largest part of MEL is simply a consequence of a change in device current caused by the MR effect.
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Submitted 6 January, 2005;
originally announced January 2005.
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Large magnetoresistance at room-temperature in semiconducting polymer sandwich devices
Authors:
T. L. Francis,
Ö. Mermer,
G. Veeraraghavan,
M. Wohlgenannt
Abstract:
We report on the discovery of a large, room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and discuss its dependence on voltage, temperature, film thickness, electrode materials, and (unintentional) impurity concentration. We usually observed negative MR, but positive MR can also be achieved under high applied elec…
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We report on the discovery of a large, room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and discuss its dependence on voltage, temperature, film thickness, electrode materials, and (unintentional) impurity concentration. We usually observed negative MR, but positive MR can also be achieved under high applied electric fields. The MR effect reaches up to 10% at fields of 10mT at room temperature. The effect shows only a weak temperature dependence and is independent of the sign and direction of the magnetic field. We find that the effect is related to the hole current in the devices.
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Submitted 29 September, 2004;
originally announced September 2004.
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Weak localization and antilocalization in semiconducting polymer sandwich devices
Authors:
Ö. Mermer,
M. Wohlgenannt,
G. Veeraraghavan,
T. L. Francis
Abstract:
We have performed magnetoresistance measurements on polyfluorene sandwich devices in weak magnetic fields as a function of applied voltage, device temperature (10K to 300K), film thickness and electrode materials. We observed either negative or positive magnetoresistance, dependent mostly on the applied voltage, with a typical magnitude of several percent. The shape of the magnetoresistance curv…
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We have performed magnetoresistance measurements on polyfluorene sandwich devices in weak magnetic fields as a function of applied voltage, device temperature (10K to 300K), film thickness and electrode materials. We observed either negative or positive magnetoresistance, dependent mostly on the applied voltage, with a typical magnitude of several percent. The shape of the magnetoresistance curve is characteristic of weak localization and antilocalization. Using weak localization theory, we find that the phase-breaking length is relatively large even at room temperature, and spin-orbit interaction is a function of the applied electric field.
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Submitted 8 December, 2003;
originally announced December 2003.
