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Tuning electronic properties and contact type in van der Waals heterostructures of bilayer SnS and graphene
Authors:
M. R. Ebrahimi,
T. Vazifehshenas
Abstract:
Using first-principles calculations, we study the structural and electronic properties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene (AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayer SnS/graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic properties of all components of the vdW heterostructures are well preserved, which reflects the weakness of t…
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Using first-principles calculations, we study the structural and electronic properties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene (AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayer SnS/graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic properties of all components of the vdW heterostructures are well preserved, which reflects the weakness of the vdW interaction. In the cases of bilayer SnS/graphene and bilayer SnS/bilayer graphene (AA-stacked), an Ohmic contact is formed which can be turned first into p-type and then into n-type Schottky contacts via application of an external electric field. Calculations show that an Ohmic contact is also formed at the interface of bilayer SnS/bilayer graphene (AB-stacked) heterostructure, but interestingly, by applying the perpendicular electric field a transition from semimetal/semiconductor contact to semiconductor/semiconductor one occurs which can enhance its optical properties. Alternatively, in the monolayer SnS/graphene/monolayer SnS vdW heterosructure, a p-type Schottky contact is established that changes into Ohmic contact under an applied electric field. Our results clearly indicate that the electronic properties of the vdW heterostructures can be tuned efficiently by external electric field, which is important in designing of new nanoelectronic devices.
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Submitted 21 January, 2023;
originally announced January 2023.
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Coulomb drag in metal monochalcogenides double-layer structures with Mexican-hat band dispersions
Authors:
S. Rostami,
T. Vazifehshenas,
T. Salavati-fard
Abstract:
We theoretically study the Coulomb drag resistivity and plasmon modes behavior for a system composed of two parallel p-type doped GaS monolayers with Mexican-hat valence energy band using the Boltzmann transport theory formalism. We investigate the effect of temperature,$\ T$, carrier density,$\ p$, and layer separation,$\ d$, on the plasmon modes and drag resistivity within the energy-independent…
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We theoretically study the Coulomb drag resistivity and plasmon modes behavior for a system composed of two parallel p-type doped GaS monolayers with Mexican-hat valence energy band using the Boltzmann transport theory formalism. We investigate the effect of temperature,$\ T$, carrier density,$\ p$, and layer separation,$\ d$, on the plasmon modes and drag resistivity within the energy-independent scattering time approximation. Our results show that the density dependence of plasmon modes can be approximated by$\ p^{0.5}$. Also, the calculations suggest a$\ d^{0.2}$ and a$\ d^{0.1}$ dependencies for the acoustic and optical plasmon energies, respectively. Interestingly, we obtain that the behavior of drag resistivity in the double-layer metal monochalcogenides swings between the behavior of a double-quantum well system with parabolic dispersion and that of a double-quantum wire structure with a large carrier density of states. In particular, the transresistivity value reduces exponentially with increasing the distance between layers. Furthermore, the drag resistivity changes as$\ T^{2}/p^{4}$ ($\ T^{2.8}/p^{4.5}$) at low (intermediate) temperatures. Finally, we compare the drag resistivity as a function of temperature for GaS with other Mexican-hat materials including GaSe and InSe and find that it adopts higher values when the metal monochalcogenide has smaller Mexican-hat height.
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Submitted 6 January, 2022;
originally announced January 2022.
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Strong anisotropic optical properties of 8-Pmmn borophene: a many-body perturbation study
Authors:
N. Deily Nazar,
T. Vazifehshenas,
M. R. Ebrahimi,
F. M. Peeters
Abstract:
Using first-principle many-body perturbation theory, we investigate the optical properties of 8- borophene at two levels of approximations; the GW method considering only the electron-electron interaction and the GW in combination with the Bethe-Salpeter equation including electron-hole coupling. The band structure exhibits anisotropic Dirac cones with semimetallic character. The optical absorptio…
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Using first-principle many-body perturbation theory, we investigate the optical properties of 8- borophene at two levels of approximations; the GW method considering only the electron-electron interaction and the GW in combination with the Bethe-Salpeter equation including electron-hole coupling. The band structure exhibits anisotropic Dirac cones with semimetallic character. The optical absorption spectra are obtained for different light polarizations and we predict strong optical absorbance anisotropy. The absorption peaks undergo a global redshift when the electron-hole interaction is taken into account due to the formation of bound excitons which have an anisotropic excitonic wave function.
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Submitted 6 January, 2022;
originally announced January 2022.
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Collective plasmonic excitations in double-layer silicene at finite temperature
Authors:
N. Dadkhah,
T. Vazifehshenas,
M. Farmanbar,
T. Salavati-fard
Abstract:
We explore the temperature-dependent plasmonic modes of an n-doped double-layer silicene system which is composed of two spatially separated single layers of silicene with a distance large enough to prevent the interlayer electron tunneling. By applying an externally applied electric field, we numerically obtain the poles of the loss function within the so-called random phase approximation, to inv…
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We explore the temperature-dependent plasmonic modes of an n-doped double-layer silicene system which is composed of two spatially separated single layers of silicene with a distance large enough to prevent the interlayer electron tunneling. By applying an externally applied electric field, we numerically obtain the poles of the loss function within the so-called random phase approximation, to investigate the effects of temperature and geometry on the plasmon branches in three different regimes: topological insulator, valley-spin polarized metal, and band insulator. Also, we present the finite-temperature numerical results along with the zero-temperature analytical ones to support a discussion of the distinct effects of the external electric field and temperature on the plasmon dispersion. Our results show that at zero temperature both the acoustic and optical modes decrease by increasing the applied electric field and experience a discontinuity at the valley-spin polarized metal phase as the system transitions from a topological insulator to a band insulator. At finite temperature, the optical plasmons are damped around this discontinuity and the acoustic modes may exhibit a continuous transition. Moreover, while the optical branch of plasmons changes non-monotonically and noticeably with temperature, the acoustic branch dispersion displays a negligible growth with temperature for all phases of silicene. Furthermore, our finite-temperature results indicate that the dependency of two plasmonic branches on the interlayer separation is not affected by temperature at long wavelengths; the acoustic mode energy varies slightly with increasing the interlayer distance, whereas the optical mode remains unchanged.
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Submitted 30 November, 2018;
originally announced November 2018.
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Anisotropic charge density wave in electron-hole double monolayers: Applied to phosphorene
Authors:
S. Saberi-Pouya,
M. Zarenia,
T. Vazifehshenas,
F. M. Peeters
Abstract:
The possibility of an inhomogeneous charge density wave phase is investigated in a system of two coupled electron and hole monolayers separated by a hexagonal boron nitride insulating layer. The charge density wave state is induced through the assumption of negative compressibility of electron/hole gases in a Coulomb drag configuration between the electron and hole sheets. Under equilibrium condit…
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The possibility of an inhomogeneous charge density wave phase is investigated in a system of two coupled electron and hole monolayers separated by a hexagonal boron nitride insulating layer. The charge density wave state is induced through the assumption of negative compressibility of electron/hole gases in a Coulomb drag configuration between the electron and hole sheets. Under equilibrium conditions, we derive analytical expressions for the density oscillation along the zigzag and armchair directions. We find that the density modulation not only depends on the sign of the compressibility but also on the anisotropy of the low energy bands. Our results are applicable to any two dimensional system with anisotropic parabolic bands, characterized by different effective masses. For equal effective masses, i.e., isotropic energy bands, our results agree with Hrolak et al.[1]. Our numerical results are applied to phosphorene.
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Submitted 29 November, 2018;
originally announced November 2018.
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Plasmon-phonon coupling in a valley-spin-polarized two-dimensional electron system: a theoretical study on monolayer silicene
Authors:
M. Mirzaei,
T. Vazifehshenas,
T. Salavati-fard,
M. Farmanbar,
B. Tanatar
Abstract:
We study the hybrid excitations due to the coupling between surface optical phonons of a polar insulator substrate and plasmons in the valley-spin-polarized metal phase of silicene under an exchange field. We perform the calculations within the generalized random-phase approximation where the plasmon-phonon coupling is taken into account by the long-range Fr$\ddot{\mathrm{o}}$hlich interaction. Ou…
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We study the hybrid excitations due to the coupling between surface optical phonons of a polar insulator substrate and plasmons in the valley-spin-polarized metal phase of silicene under an exchange field. We perform the calculations within the generalized random-phase approximation where the plasmon-phonon coupling is taken into account by the long-range Fr$\ddot{\mathrm{o}}$hlich interaction. Our investigation on two hybridized plasmon branches in different spin and valley subbands shows distinct behavior compared to the uncoupled case. Interestingly, in one valley, it is found that while the high energy hybrid branch is totally damped in the spin-up state, it can be well-defined in the the spin-down state. Moreover, we show that the electron-phonon coupling is stronger in both spin-down subbands, regardless of valley index, due to their higher electron densities. In addition, we study the effects of electron-phonon coupling on the quasiparticle scattering rate of four distinct spin-valley locked subbands. The results of our calculations predict a general enhancement in the scattering rate for all subbands, and a jump in the case of spin-down states. This sharp increase associated to the damping of hybrid plasmon modes is almost absent in the uncoupled case. The results suggest an effective way for manipulating collective modes of valley-spin-polarized silicene which may become useful in future valleytronic and spintronic applications.
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Submitted 29 November, 2018;
originally announced November 2018.
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High temperature electron-hole superfluidity with strong anisotropic gaps in double phosphorene monolayers
Authors:
S. Saberi-Pouya,
M. Zarenia,
A. Perali,
T. Vazifehshenas,
F. M. Peeters
Abstract:
Excitonic superfluidity in double phosphorene monolayers is investigated using the BCS mean-field equations. Highly anisotropic superfluidity is predicted where we found that the maximum superfluid gap is in the BEC regime along the armchair direction and in the BCS-BEC crossover regime along the zigzag direction. We estimate the highest Kosterlitz-Thouless transition temperature with maximum valu…
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Excitonic superfluidity in double phosphorene monolayers is investigated using the BCS mean-field equations. Highly anisotropic superfluidity is predicted where we found that the maximum superfluid gap is in the BEC regime along the armchair direction and in the BCS-BEC crossover regime along the zigzag direction. We estimate the highest Kosterlitz-Thouless transition temperature with maximum value up to $\sim 90$ K with onset carrier densities as high as $4 \times 10^{12}$ cm$^{-2}$. This transition temperature is significantly larger than what is found in double electron-hole few-layers of graphene. Our results can guide experimental research towards the realization of anisotropic condensate states in electron-hole phosphorene monolayers.
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Submitted 18 April, 2018;
originally announced April 2018.
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Phononic thermal conductivity in silicene: the role of vacancy defects and boundary scattering
Authors:
M. Barati,
T. Vazifehshenas,
T. Salavati-fard,
M. Farmanbar
Abstract:
We calculate the thermal conductivity of free-standing silicene using the phonon Boltzmann transport equation within the relaxation time approximation. In this calculation, we investigate the effects of sample size and different scattering mechanisms such as phonon-phonon, phonon-boundary, phonon-isotope and phonon-vacancy defect. Moreover, the role of different phonon modes is examined. We show t…
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We calculate the thermal conductivity of free-standing silicene using the phonon Boltzmann transport equation within the relaxation time approximation. In this calculation, we investigate the effects of sample size and different scattering mechanisms such as phonon-phonon, phonon-boundary, phonon-isotope and phonon-vacancy defect. Moreover, the role of different phonon modes is examined. We show that, in contrast to graphene, the dominant contribution to the thermal conductivity of silicene originates from the in-plane acoustic branches, which is about 70\% at room temperature and this contribution becomes larger by considering vacancy defects. Our results indicate that while the thermal conductivity of silicene is significantly suppressed by the vacancy defects, the effect of isotopes on the phononic transport is small. Our calculations demonstrate that by removing only one of every 400 silicon atoms, a substantial reduction of about 58\% in thermal conductivity is achieved. Furthermore, we find that the phonon-boundary scattering is important in defectless and small-size silicene samples, specially at low temperatures.
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Submitted 28 December, 2017;
originally announced December 2017.
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Plasmon modes in monolayer and double-layer black phosphorus under applied uniaxial strain
Authors:
S. Saberi-Pouya,
T. Vazifehshenas,
M. Saleh,
M. Farmanbar,
T. Salavati-fard
Abstract:
We study the effects of an applied in-plane uniaxial strain on the plasmon dispersions of monolayer, bilayer and double-layer phosphorene structures in the long-wavelength limit within the linear elasticity theory. In the low energy limit, these effects can be modeled through the change in the curvature of the anisotropic energy band along the armchair and zigzag directions. We derive analytical r…
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We study the effects of an applied in-plane uniaxial strain on the plasmon dispersions of monolayer, bilayer and double-layer phosphorene structures in the long-wavelength limit within the linear elasticity theory. In the low energy limit, these effects can be modeled through the change in the curvature of the anisotropic energy band along the armchair and zigzag directions. We derive analytical relations for the plasmon modes under uniaxial strain and show that the direction of the applied strain is important. Moreover, we observe that along the armchair direction, the changes of the plasmon dispersion with strain are different and larger than those along the zigzag direction. Using the analytical relations for two-layer phosphorene systems, we find that the strain-dependent orientation factor of layers could be considered as a means to control the variations of the plasmon energy. Furthermore, our study shows that the plasmonic collective modes are more affected when the strain is applied equally to the layers compared to the case in which the strain is applied asymmetrically to the layers. We also calculate the effect of strain on the drag resistivity in a double-layer phosphorene structure and obtain that the changes in the plasmonic excitations, due to an applied strain, are mainly responsible for the predicted results. This study can be easily extended to other anisotropic two-dimensional materials.
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Submitted 21 October, 2017;
originally announced October 2017.
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Anisotropic hybrid excitation modes in monolayer and double-layer phosphorene on polar substrates
Authors:
S. Saberi-Pouya,
T. Vazifehshenas,
T. Salavati-fard,
M. Farmanbar
Abstract:
We investigate the anisotropic hybrid plasmon-SO phonon dispersion relations in monolayer and double-layer phosphorene systems located on the polar substrates, such as SiO2, h-BN and Al2O3. We calculate these hybrid modes with using the dynamical dielectric function in the RPA by considering the electron-electron interaction and long-range electric field generated by the substrate SO phonons via F…
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We investigate the anisotropic hybrid plasmon-SO phonon dispersion relations in monolayer and double-layer phosphorene systems located on the polar substrates, such as SiO2, h-BN and Al2O3. We calculate these hybrid modes with using the dynamical dielectric function in the RPA by considering the electron-electron interaction and long-range electric field generated by the substrate SO phonons via Frohlich interaction. In the long-wavelength limit, we obtain some analytical expressions for the hybrid plasmon-SO phonon dispersion relations which represent the behavior of these modes akin to the modes obtaining from the loss function. Our results indicate a strong anisotropy in plasmon-SO phonon modes, whereas they are stronger along the light-mass direction in our heterostructures. Furthermore, we find that the type of substrate has a significant effect on the dispersion relations of the coupled modes. Also, by tuning the misalignment and separation between layers in double-layer phosphorene on polar substrates, we can engineer the hybrid modes.
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Submitted 1 May, 2017;
originally announced May 2017.
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Strong anisotropic optical conductivity in two dimensional puckered structures: The role of Rashba effect
Authors:
S. Saberi-Pouya,
T. Vazifehshenas,
T. Salavati-fard,
M. Farmanbar,
F. M. Peeters
Abstract:
We calculate the optical conductivity of an anisotropic two-dimensional system with Rashba spin-flip excitation within the Kubo formalism. We show that the anisotropic Rashba effect caused by an external field changes significantly the magnitude of the spin splitting. Furthermore, we obtain an analytical expression for the longitudinal optical conductivity associated with inter-band transitions as…
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We calculate the optical conductivity of an anisotropic two-dimensional system with Rashba spin-flip excitation within the Kubo formalism. We show that the anisotropic Rashba effect caused by an external field changes significantly the magnitude of the spin splitting. Furthermore, we obtain an analytical expression for the longitudinal optical conductivity associated with inter-band transitions as a function of the frequency for an arbitrary polarization angle. We find that the diagonal components of the optical conductivity tensor are direction-dependent and the spectrum of optical absorption is strongly anisotropic with an absorption window. The height and width of this absorption window are very sensitive to the system anisotropy. While the height of absorption peak increases with increasing effective mass anisotropy ratio, the peak intensity is larger when the light polarization is along the armchair direction. Moreover, the absorption peak width becomes broader as the density of state mass or Rashba interaction is enhanced. These features can be used to determine parameters relevant for spintronics through the optical absorption spectrum.
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Submitted 18 April, 2017;
originally announced April 2017.
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Coulomb drag in anisotropic systems: a theoretical study on a double-layer phosphorene
Authors:
S. Saberi-Pouya,
T. Vazifehshenas,
M. Farmanbar,
T. Salavati-fard
Abstract:
We theoretically study the Coulomb drag resistivity in a double-layer electron system with highly anisotropic parabolic band structure using Boltzmann transport theory. As an example, we consider a double-layer phosphorene on which we apply our formalism. This approach, in principle, can be tuned for other double-layered systems with paraboloidal band structures. Our calculations show the rotation…
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We theoretically study the Coulomb drag resistivity in a double-layer electron system with highly anisotropic parabolic band structure using Boltzmann transport theory. As an example, we consider a double-layer phosphorene on which we apply our formalism. This approach, in principle, can be tuned for other double-layered systems with paraboloidal band structures. Our calculations show the rotation of one layer with respect to another layer can be considered a way of controlling the drag resistivity in such systems. As a result of rotation, the off-diagonal elements of drag resistivity tensor have non-zero values at any temperature. In addition, we show that the anisotropic drag resistivity is very sensitive to the direction of momentum transfer between two layers due to highly anisotropic inter-layer electron-electron interaction and also the plasmon modes. In particular, the drag anisotropy ratio, \r{ho}yy/\r{ho}xx, can reach up to ~ 3 by changing the temperature. Furthermore,our calculations suggest that including the local field correction in dielectric function changes the results significantly. Finally, We examine the dependence of drag resistivity and its anisotropy ratio on various parameters like inter-layer separation, electron density, short-range interaction and insulating substrate/spacer.
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Submitted 26 May, 2016; v1 submitted 31 January, 2016;
originally announced February 2016.
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Geometrical Asymmetry Effect on Energy and Momentum Transfer Rates in a Double-quantum-well Structure: Linear Regime
Authors:
T. Vazifehshenas,
T. Salavati-fard
Abstract:
We investigate theoretically the effect of spatial asymmetry on the energy and momentum transfer rates in a double-quantum-well system using balance equation approach. Our study is limited to the linear regime where the applied electric field is sufficiently weak. We calculate the screened potential by using the random phase approximation and Hubbard approximation for the cases of high and low ele…
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We investigate theoretically the effect of spatial asymmetry on the energy and momentum transfer rates in a double-quantum-well system using balance equation approach. Our study is limited to the linear regime where the applied electric field is sufficiently weak. We calculate the screened potential by using the random phase approximation and Hubbard approximation for the cases of high and low electron densities, respectively. Our numerical results predict that the spatial asymmetry affects considerably both the energy transfer and drag rates as a result of changes in plasmon modes. Also, we find that the spatial asymmetry effect disappears at lower temperatures by inclusion the short-range interaction.
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Submitted 12 August, 2014;
originally announced August 2014.
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Energy Transfer Rate in Double-Layer Graphene Systems: Linear Regime
Authors:
B. Bahrami,
T. Vazifehshenas
Abstract:
We investigate theoretically the energy transfer phenomenon in a double-layer graphene (DLG) system in which two layers are coupled due to the Coulomb interlayer interaction without appreciable interlayer tunneling. We use the balance equation approach and the dynamic and temperature dependent random phase approximation (RPA) screening function in our calculations to obtain the rates of energy tra…
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We investigate theoretically the energy transfer phenomenon in a double-layer graphene (DLG) system in which two layers are coupled due to the Coulomb interlayer interaction without appreciable interlayer tunneling. We use the balance equation approach and the dynamic and temperature dependent random phase approximation (RPA) screening function in our calculations to obtain the rates of energy transfer between two graphene layers at different layer electron temperatures, densities and interlayer spacings and compare the results with those calculated for the conventional double-layer two-dimensional electron gas (2DEG) systems. In addition, we study the effect of changing substrate dielectric constant on the rate of energy transfer. The general behavior of the energy transfer rate in the DLG is qualitatively similar to that obtained in the double-layer 2DEG but quantitatively its DLG values are an order of magnitude greater. Also, at large electron temperature differences between two layers, the electron density dependence of the energy transfer for the DLG system is significantly different from that found for the double-layer 2DEG system, particularly in case of unequal layer electron densities.
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Submitted 28 January, 2012; v1 submitted 23 January, 2012;
originally announced January 2012.
