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Exsolution of oxygen impurity from diamond lattice and formation of pressurized CO2-I precipitates
Authors:
Andrei A. Shiryaev,
Yurii Chesnokov,
Alexander L. Vasiliev,
Thomas Hainschwang
Abstract:
Diamond single crystals showing Infra-red features of pressurized CO2-I phase were studied using Transmission Electron Microscopy (TEM) and tomography. Numerous O-containing precipitates with sizes up to 45 nm are observed. The absolute majority of these precipitates decorate dislocation loops or are located inside them; individual scattered precipitates are also present. Morphology of the precipi…
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Diamond single crystals showing Infra-red features of pressurized CO2-I phase were studied using Transmission Electron Microscopy (TEM) and tomography. Numerous O-containing precipitates with sizes up to 45 nm are observed. The absolute majority of these precipitates decorate dislocation loops or are located inside them; individual scattered precipitates are also present. Morphology of the precipitates varies from quasi-isometric octahedra to highly flattened elongated ones. Close association of the precipitates with the dislocation loops implies their formation by exsolution of oxygen impurity from diamond lattice; the size distribution of the precipitates suggests that the equilibrium state is not yet reached. Presumably, the morphology and precise chemical composition depend on P-T-t evolution of the diamond crystal and corresponding changes in oxygen supersaturation in the lattice. The CO2-containing diamonds often contain micron-sized hexagonal lamellar inclusions. TEM investigation of a lamellae reveals that it consists of high quality graphite showing partial epitaxial relation with comprising diamond. The gap between the graphite and diamond may be enriched with oxygen impurity.
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Submitted 20 May, 2023;
originally announced May 2023.
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Formation and characterization of an Al-rich metastable phase in Al-B phase diagram
Authors:
A. I. Malkin,
V. V. Chernyshev,
A. A. Ryazantseva,
A. L. Vasiliev,
M. S. Nickolsky,
A. A. Shiryaev
Abstract:
Vacuum heat treatment of mechanically-alloyed powders of boron and aluminum leads to formation of a metastable Al-rich phase, which can be quenched. Its structure, composition, and thermal stability are established. With chemical formula Al1.28B the rhombohedral phase is unusually rich in Al. Parameters of the unit cell determined from X-ray powder diffraction are: a=18.3464(19) Å, c=8.9241(9) Å,…
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Vacuum heat treatment of mechanically-alloyed powders of boron and aluminum leads to formation of a metastable Al-rich phase, which can be quenched. Its structure, composition, and thermal stability are established. With chemical formula Al1.28B the rhombohedral phase is unusually rich in Al. Parameters of the unit cell determined from X-ray powder diffraction are: a=18.3464(19) Å, c=8.9241(9) Å, 2601.3(6) Å3, space group R-3. It is stable at heating up to 630 °C. It is suggested that this phase is an important intermediate step in formation of AlB2 and, eventually, of other borides and its nucleation and thermal stability are explained by high elastic energy hindering formation of equilibrium phases at low temperatures.
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Submitted 3 June, 2021;
originally announced June 2021.
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Tunable spin-flop transition in artificial ferrimagnets
Authors:
N. O. Antropov,
E. A. Kravtsov,
M. V. Makarova,
V. V. Proglyado,
T. Keller,
I. A. Subbotin,
E. M. Pashaev,
G. V. Prutskov,
A. L. Vasiliev,
Yu. M. Chesnokov,
N. G. Bebenin,
V. V. Ustinov,
B. Keimer,
Yu. N. Khaydukov
Abstract:
Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many applications of a rapidly developing antiferromagnetic spintronics. However, the difficulty of using them in conventional antiferromagnets lies in (a) too large switching…
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Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many applications of a rapidly developing antiferromagnetic spintronics. However, the difficulty of using them in conventional antiferromagnets lies in (a) too large switching magnetic fields (b) the need for presence of a magnetic anisotropy, and (c) requirement to apply magnetic field along the correspondent anisotropy axis. In this work we propose to use artificial ferrimagnets in which the spin-flop transition occurs without anisotropy and the transition field can be lowered by adjusting exchange coupling in the structure. This is proved by experiment on artificial Fe-Gd ferrimagnets where usage of Pd spacers allowed us to suppress the transition field by two orders of magnitude.
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Submitted 1 February, 2021; v1 submitted 15 January, 2021;
originally announced January 2021.
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Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (CoFeB)x(LiNbO3)100-x nanocomposite
Authors:
M. N. Martyshov,
A. V. Emelyanov,
V. A. Demin,
K. E. Nikiruy,
A. A. Minnekhanov,
S. N. Nikolaev,
A. N. Taldenkov,
A. V. Ovcharov,
M. Yu. Presnyakov,
A. V. Sitnikov,
A. L. Vasiliev,
P. A. Forsh,
A. B. Granovskiy,
P. K. Kashkarov,
M. V. Kovalchuk,
V. V. Rylkov
Abstract:
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogr…
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Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogranules of 3-6 nm in size, contained a large number of dispersed Co (Fe) atoms (up to ~10^22 cm^-3). Measurements were performed both in DC and AC (frequency range 5-13 MHz) regimes. When switching structures from high-resistance (Roff) to low-resistance (Ron) state, the effect of a strong increase in their capacity was found, which reaches 8 times at x $\approx$ 15 at. % and the resistance ratio Roff/Ron $\approx$ 40. The effect is explained by the synergetic combination of the multifilamentary character of resistive switching (RS) and structural features of the samples associated, in particular, with the formation of high-resistance and strongly polarizable LiNbO3 layer near the bottom electrode of the structures. The proposed model is confirmed by investigations of RS of two-layer nanoscale M/NC/LiNbO3/M structures as well as by studies of the magnetization of M/NC/M structures in the pristine state and after RS.
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Submitted 17 August, 2020; v1 submitted 8 December, 2019;
originally announced December 2019.
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High temperature magnetism and microstructure of semiconducting ferromagnetic alloy (GaSb)$_{1-x}$(MnSb)$_{x}$
Authors:
L. N. Oveshnikov,
E. I. Nekhaeva,
A. V. Kochura,
A. B. Davydov,
M. A. Shakhov,
S. F. Marenkin,
O. A. Novodvorskii,
A. P. Kuzmenko,
A. L. Vasiliev,
B. A. Aronzon,
E. Lahderanta
Abstract:
We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition method using (GaSb)$_{0.59}$(MnSb)$_{0.41}$ eutectic compound as a target for sputtering. For the studied films we have observed ferromagnetism and anomalous Hall effect above the room temperature, it manifests the presence of spin-polarized carriers. Electron microscopy, ato…
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We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition method using (GaSb)$_{0.59}$(MnSb)$_{0.41}$ eutectic compound as a target for sputtering. For the studied films we have observed ferromagnetism and anomalous Hall effect above the room temperature, it manifests the presence of spin-polarized carriers. Electron microscopy, atomic and magnetic force microscopy results suggests that films under study have homogenous columnar structure in the bulk while MnSb inclusions accumulate near it's surface. This is in good agreement with high mobility values of charge carriers. Based on our data we conclude that room temperature magnetic and magnetotransport properties of the films are defined by MnSb inclusions.
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Submitted 18 March, 2018;
originally announced March 2018.
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Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu
Authors:
B. A. Aronzon,
L. N. Oveshnikov,
V. A. Prudkoglyad,
Yu. G. Selivanov,
E. G. Chizhevskii,
K. I. Kugel,
I. A. Karateev,
A. L. Vasiliev,
E. Lahderanta
Abstract:
Structural, magnetic and magnetotransport properties of (Bi$_{1-x}$Eu$_x$)$_2$Se$_3$ thin films have been studied experimentally as a function of Eu content. The films were synthesized by MBE. It is demonstrated that Eu distribution is not uniform, it enter quint-layers forming inside them plain (pancake-like) areas containing Eu atoms, which sizes and concentration increase with the growth of Eu…
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Structural, magnetic and magnetotransport properties of (Bi$_{1-x}$Eu$_x$)$_2$Se$_3$ thin films have been studied experimentally as a function of Eu content. The films were synthesized by MBE. It is demonstrated that Eu distribution is not uniform, it enter quint-layers forming inside them plain (pancake-like) areas containing Eu atoms, which sizes and concentration increase with the growth of Eu content. Positive magnetoresistance related to the weak antilocalization was observed up to 15K. The antilocalization was not followed by weak localization as theory predicts for nontrivial topological states. Surprisingly, the features of antilocalization were seen even at Eu content $x$ $=$ 0.21. With the increase of Eu content the transition to ferromagnetic state occurs at $x$ about 0.1 and with the Curie temperature $\approx$ 8K, that rises up to 64K for $x$ $=$ 0.21. At temperatures above 1-2 K, the dephasing length is proportional to $T^{-1/2}$ indicating the dominant contribution of inelastic $e-e$ scattering into electron phase breaking. However, at low temperatures the dephasing length saturates, that could be due to the scattering on magnetic ions.
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Submitted 18 September, 2017;
originally announced September 2017.
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Tunneling anomalous Hall effect in the nanogranular CoFe-B-Al-O films near the metal-insulator transition
Authors:
V. V. Rylkov,
S. N. Nikolaev,
K. Yu. Chernoglazov,
V. A. Demin,
A. V. Sitnikov,
M. Yu. Presnyakov,
A. L. Vasiliev,
N. S. Perov,
A. S. Vedeneev,
Yu. E. Kalinin,
V. V. Tugushev,
A. B. Granovsky
Abstract:
We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix.…
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We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix. Our investigations are focused on the anomalous Hall effect (AHE) resistivity Rh and longitudinal resistivity R at T=5-200 K on the metallic side of metal-insulator transition in samples with the metal content x=49-56 at.%, that nominally corresponds to (Co40Fe40B20)x(Al2O3)100-x in the formula approximation. The conductivity at T > 15 K follows the lnT behavior that matches a strong tunnel coupling between nanogranules. It is shown that the scaling power-laws between AHE resistivity and longitudinal resistivity strongly differ, if temperature T or metal content x are variable parameters: Rh(T)~R(T)^0.4-0.5 obtained from the temperature variation of R and Rh at fixed x, while Rh(x)/x~R(x)^0.24, obtained from measurements at the fixed low temperature region (10-40 K) for samples with different x. We qualitatively describe our experimental data in the frame of phenomenological model of two sources of AHE e.m.f. arising from metallic nanogranules and insulating tunneling regions, respectively, at that the tunneling AHE (TAHE) source is strongly shunted due to generation of local circular Hall currents. We consider our experimental results as the first experimental proof of the TAHE manifestation.
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Submitted 16 November, 2016;
originally announced November 2016.
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Grain-size dependent high-temperature ferromagnetism of polycrystalline MnxSi1-x (x~0.5) films
Authors:
S. N. Nikolaev,
A. S. Semisalova,
V. V. Rylkov,
V. V. Tugushev,
A. V. Zenkevich,
A. L. Vasiliev,
E. M. Pashaev,
K. Yu. Chernoglazov,
Yu. M. Chesnokov,
I. A. Likhachev,
N. S. Perov,
Yu. A. Matveyev,
O. A. Novodvorskii,
E. T. Kulatov,
A. S. Bugaev,
Y. Wang,
S. Zhou
Abstract:
We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth.…
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We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth. It is found that studied films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature TC ~ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the layered polycrystalline structure with a self-organizing grain size distribution. The HT FM order is originated from the bottom interfacial nanocrystalline layer, while the upper layer possesses the low temperature (LT) type of FM order with TC = 46 K, gives essential contribution to the magnetization below 50 K and is homogeneous on the nanometer size scale. Under these conditions, AHE changes its sign from positive to negative at T < 30 K. We attribute observed properties to the synergy of self-organizing distribution of MnxSi1-x crystallites in size and peculiarities of defect-induced FM order in PLD grown polycrystalline MnxSi1-x (x~0.5) films.
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Submitted 8 October, 2015;
originally announced October 2015.
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Hybrid heterostructures with superconducting/antiferromagnetic interfaces
Authors:
G. A. Ovsyannikov,
K. Y. Constantinian,
Yu. V. Kislinskii,
A. V. Shadrin,
Yu. Khaydukov,
T. Keller,
A. L. Vasiliev
Abstract:
We report on structural, DC, X-ray and neutron studies of hybrid superconducting mesa-heterostructures with a cuprate antiferromagnetic interlayer Ca1-xSrxCuO2 (CSCO). The upper electrode was bilayer Nb/Au superconductor and copper oxide superconductor YBa2Cu3O7 (YBCO) was the bottom electrode. It was experimentally shown that during the epitaxial growth of the two films YBCO and CSCO a charge car…
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We report on structural, DC, X-ray and neutron studies of hybrid superconducting mesa-heterostructures with a cuprate antiferromagnetic interlayer Ca1-xSrxCuO2 (CSCO). The upper electrode was bilayer Nb/Au superconductor and copper oxide superconductor YBa2Cu3O7 (YBCO) was the bottom electrode. It was experimentally shown that during the epitaxial growth of the two films YBCO and CSCO a charge carrier doping takes place in the CSCO interlayer with a depth about 20 nm. The conductivity of the doped part of CSCO layer is close to the metal type, while the reference CSCO film, deposited directly on NdGaO3 substrate, behaves as Mott insulator with the hopping conductivity. The interface Au/CSCO is clearly seen on bright-field image of the cross-section of heterostructure and gives the main contribution to the total resistance of mesa-heterostructure.
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Submitted 20 February, 2013;
originally announced February 2013.
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Quantum phase slip phenomenon in ultra-narrow superconducting nanorings
Authors:
K. Yu. Arutyunov,
T. T. Hongisto,
J. S. Lehtinen,
L. I. Leino,
A. L. Vasiliev
Abstract:
The smaller the system, typically - the higher is the impact of fluctuations. In narrow superconducting wires sufficiently close to the critical temperature Tc thermal fluctuations are responsible for the experimentally observable finite resistance. Quite recently it became possible to fabricate sub-10 nm superconducting structures, where the finite resistivity was reported within the whole range…
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The smaller the system, typically - the higher is the impact of fluctuations. In narrow superconducting wires sufficiently close to the critical temperature Tc thermal fluctuations are responsible for the experimentally observable finite resistance. Quite recently it became possible to fabricate sub-10 nm superconducting structures, where the finite resistivity was reported within the whole range of experimentally obtainable temperatures. The observation has been associated with quantum fluctuations capable to quench zero resistivity in superconducting nanowires even at temperatures T-->0. Here we demonstrate that in tiny superconducting nanorings the same phenomenon is responsible for suppression of another basic attribute of superconductivity - persistent currents - dramatically affecting their magnitude, the period and the shape of the current-phase relation. The effect is of fundamental importance demonstrating the impact of quantum fluctuations on the ground state of a macroscopically coherent system, and should be taken into consideration in various nanoelectronic applications.
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Submitted 24 May, 2012;
originally announced May 2012.
