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The impact of strain on the GeV-color center in diamond
Authors:
Thijs G. I. van Wijk,
E. Aylin Melan,
Rani Mary Joy,
Emerick Y. Guillaume,
Paulius Pobedinskas,
Ken Haenen,
Danny E. P. Vanpoucke
Abstract:
Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV$^0$. Both hydrostatic and linear strain are modeled using density functional theory for GeV$^0$ concentrations of $1.61$ \% down to $0.10$ \%. We present qualitative and quantitative differences between th…
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Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV$^0$. Both hydrostatic and linear strain are modeled using density functional theory for GeV$^0$ concentrations of $1.61$ \% down to $0.10$ \%. We present qualitative and quantitative differences between the two strain types: for hydrostatic tensile and compressive strain, red-and blue-shifted ZPL positions are expected, respectively, with a linear relation between the ZPL shift and the experienced stress. By calculating the ZPL shift for varying GeV$^0$ concentrations, a shift of $0.15$ nm/GPa ($0.38$ meV/GPa) is obtained at experimentally relevant concentrations using a hybrid functional. In contrast, only red-shifted ZPL are found for tensile and compressive linear strain along the $\langle100\rangle$ direction. The calculated ZPL shift exceeds that of hydrostatic strain by at least one order of magnitude, with a significant difference between tensile and compressive strains: $3.2$ and $4.8$ nm/GPa ($8.1$ and $11.7$ meV/GPa), respectively. In addition, a peak broadening is expected due to the lifted degeneracy of the GeV$^0$ $e_g$ state, calculated to be about $6$ meV/GPa. These calculated results are placed in perspective with experimental observations, showing values of ZPL shifts and splittings of comparable magnitude.
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Submitted 16 January, 2025; v1 submitted 18 December, 2024;
originally announced December 2024.
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First-principles investigation of hydrogen-related reactions on (100)--(2$\times$1)$:$H diamond surfaces
Authors:
Emerick Y. Guillaume,
Danny E. P. Vanpoucke,
Rozita Rouzbahani,
Luna Pratali Maffei,
Matteo Pelucchi,
Yoann Olivier,
Luc Henrard,
Ken Haenen
Abstract:
Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis of the reactions involving H-radical and vacancies on H-passivated diamond surfaces exposed to hydrogen radical-rich atmosphere. By means of first principles calculations -- density func…
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Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis of the reactions involving H-radical and vacancies on H-passivated diamond surfaces exposed to hydrogen radical-rich atmosphere. By means of first principles calculations -- density functional theory and climbing image nudged elastic band method -- transition states related to these mechanisms are identified and characterised. In addition, accurate reaction rates are computed using variational transition state theory. Together, these methods provide -- for a broad range of temperatures and hydrogen radical concentrations -- a picture of the relative likelihood of the migration or radical attack processes, along with a statistical description of the hydrogen coverage fraction of the (100) H-passivated surface, refining earlier results via a more thorough analysis of the processes at stake. Additionally, the migration of H-vacancy is shown to be anisotropic, and occurring preferentially across the dimer rows of the reconstructed surface. The approach used in this work can be generalised to other crystallographic orientations of diamond surfaces or other semiconductors.
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Submitted 20 February, 2024;
originally announced February 2024.
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How to verify the precision of density-functional-theory implementations via reproducible and universal workflows
Authors:
Emanuele Bosoni,
Louis Beal,
Marnik Bercx,
Peter Blaha,
Stefan Blügel,
Jens Bröder,
Martin Callsen,
Stefaan Cottenier,
Augustin Degomme,
Vladimir Dikan,
Kristjan Eimre,
Espen Flage-Larsen,
Marco Fornari,
Alberto Garcia,
Luigi Genovese,
Matteo Giantomassi,
Sebastiaan P. Huber,
Henning Janssen,
Georg Kastlunger,
Matthias Krack,
Georg Kresse,
Thomas D. Kühne,
Kurt Lejaeghere,
Georg K. H. Madsen,
Martijn Marsman
, et al. (20 additional authors not shown)
Abstract:
In the past decades many density-functional theory methods and codes adopting periodic boundary conditions have been developed and are now extensively used in condensed matter physics and materials science research. Only in 2016, however, their precision (i.e., to which extent properties computed with different codes agree among each other) was systematically assessed on elemental crystals: a firs…
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In the past decades many density-functional theory methods and codes adopting periodic boundary conditions have been developed and are now extensively used in condensed matter physics and materials science research. Only in 2016, however, their precision (i.e., to which extent properties computed with different codes agree among each other) was systematically assessed on elemental crystals: a first crucial step to evaluate the reliability of such computations. We discuss here general recommendations for verification studies aiming at further testing precision and transferability of density-functional-theory computational approaches and codes. We illustrate such recommendations using a greatly expanded protocol covering the whole periodic table from Z=1 to 96 and characterizing 10 prototypical cubic compounds for each element: 4 unaries and 6 oxides, spanning a wide range of coordination numbers and oxidation states. The primary outcome is a reference dataset of 960 equations of state cross-checked between two all-electron codes, then used to verify and improve nine pseudopotential-based approaches. Such effort is facilitated by deploying AiiDA common workflows that perform automatic input parameter selection, provide identical input/output interfaces across codes, and ensure full reproducibility. Finally, we discuss the extent to which the current results for total energies can be reused for different goals (e.g., obtaining formation energies).
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Submitted 26 May, 2023;
originally announced May 2023.
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Linker Functionalization in MIL-47(V)-R Metal-Organic Frameworks: Understanding the Electronic Structure
Authors:
Danny E. P. Vanpoucke
Abstract:
Metal-Organic Frameworks (MOFs) have gained much interest due to their intrinsic tunable nature. In this work, we study how linker functionalization modifies the electronic structure of the host MOF, more specifically the MIL-47(V)-R (R=-F, -Cl, -Br, -OH, -CH$_3$, -CF$_3$, and -OCH$_3$). It is shown that the presence of a functional group leads to a splitting of the $π$-orbital on the linker. More…
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Metal-Organic Frameworks (MOFs) have gained much interest due to their intrinsic tunable nature. In this work, we study how linker functionalization modifies the electronic structure of the host MOF, more specifically the MIL-47(V)-R (R=-F, -Cl, -Br, -OH, -CH$_3$, -CF$_3$, and -OCH$_3$). It is shown that the presence of a functional group leads to a splitting of the $π$-orbital on the linker. Moreover, the upward shift of the split-off $π$-band correlates well with the electron withdrawing/donating nature of the functional groups. For halide functional groups the presence of lone-pair back donation is corroborated by calculated Hirshfeld-I charges. In case of the ferromagnetic configuration of the host MIL-47(V$^{\mathrm{+IV}}$) material a half-metal to insulator transition is noted for the -Br, -OCH$_3$, and -OH functional groups, while for the anti-ferromagnetic configuration only the hydroxy-group results in an effective reduction of the band gap.
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Submitted 27 April, 2021;
originally announced April 2021.
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Fingerprinting defects in diamond: Partitioning the vibrational spectrum
Authors:
Danny E. P. Vanpoucke
Abstract:
In this work, we present a computational scheme for isolating the vibrational spectrum of a defect in a solid. By quantifying the defect character of the atom-projected vibrational spectra, the contributing atoms are identified and the strength of their contribution determined. This method could be used to systematically improve phonon fragment calculations. More interestingly, using the atom-proj…
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In this work, we present a computational scheme for isolating the vibrational spectrum of a defect in a solid. By quantifying the defect character of the atom-projected vibrational spectra, the contributing atoms are identified and the strength of their contribution determined. This method could be used to systematically improve phonon fragment calculations. More interestingly, using the atom-projected vibrational spectra of the defect atoms directly, it is possible to obtain a well-converged defect spectrum at lower computational cost, which also incorporates the host-lattice interactions. Using diamond as the host material, four test case defects, each presenting a distinctly different vibrational behaviour, are considered: a heavy substitutional dopant (Eu), two intrinsic defects (neutral vacancy and split interstitial), and the negatively charged N-vacancy center. The heavy dopant and split interstitial present localized modes at low and high frequencies, respectively, showing little overlap with the host spectrum. In contrast, the neutral vacancy and the N-vacancy center show a broad contribution to the upper spectral range of the host spectrum, making them challenging to extract. Independent of the vibrational behaviour, the main atoms contributing to the defect spectrum can be clearly identified. Recombination of their atom-projected spectra results in the isolated defect spectrum.
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Submitted 17 January, 2020;
originally announced January 2020.
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Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study
Authors:
Danny E. P. Vanpoucke,
Shannon S. Nicley,
Jorne Raymakers,
Wouter Maes,
Ken Haenen
Abstract:
The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 ele…
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The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 electron. Hybrid-functional electronic-band-structures show the luminescence of the Eu defect to be strongly dependent on the local defect geometry. The 4-coordinated Eu substitutional dopant is the most promising candidate to present the typical Eu3+ luminescence, while the 6-coordinated Eu-vacancy complex is expected not to present any luminescent behaviour. Preliminary experimental results on the treatment of diamond films with Eu-containing precursor indicate the possible incorporation of Eu into diamond films treated by drop-casting. Changes in the PL spectrum, with the main luminescent peak shifting from approximately 614 nm to 611 nm after the growth plasma exposure, and the appearance of a shoulder peak at 625 nm indicate the potential incorporation. Drop-casting treatment with an electronegative polymer material was shown not to be necessary to observe the Eu signature following the plasma exposure, and increased the background luminescence.
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Submitted 23 April, 2019;
originally announced April 2019.
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Models and Simulations in Material Science: Two Cases Without Error Bars
Authors:
Sylvia Wenmackers,
Danny E. P. Vanpoucke
Abstract:
We discuss two research projects in material science in which the results cannot be stated with an estimation of the error: a spectro- scopic ellipsometry study aimed at determining the orientation of DNA molecules on diamond and a scanning tunneling microscopy study of platinum-induced nanowires on germanium. To investigate the reliability of the results, we apply ideas from the philosophy of mod…
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We discuss two research projects in material science in which the results cannot be stated with an estimation of the error: a spectro- scopic ellipsometry study aimed at determining the orientation of DNA molecules on diamond and a scanning tunneling microscopy study of platinum-induced nanowires on germanium. To investigate the reliability of the results, we apply ideas from the philosophy of models in science. Even if the studies had reported an error value, the trustworthiness of the result would not depend on that value alone.
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Submitted 14 November, 2013;
originally announced November 2013.
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Aliovalent Doping of CeO$_2$: DFT-study of Oxidation State and Vacancy Effects
Authors:
Danny E. P. Vanpoucke,
Patrick Bultinck,
Stefaan Cottenier,
Veronique Van Speybroeck,
Isabel Van Driessche
Abstract:
The modification of the properties of CeO$_2$ through aliovalent doping are investigated within the \emph{ab-initio} density functional theory framework. Lattice parameters, dopant atomic radii, bulk moduli and thermal expansion coefficients of fluorite type Ce$_{1-x}$M$_{x}$O$_{2-y}$ (with M$ = $ Mg, V, Co, Cu, Zn, Nb, Ba, La, Sm, Gd, Yb, and Bi)are presented for dopant concentrations in the rang…
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The modification of the properties of CeO$_2$ through aliovalent doping are investigated within the \emph{ab-initio} density functional theory framework. Lattice parameters, dopant atomic radii, bulk moduli and thermal expansion coefficients of fluorite type Ce$_{1-x}$M$_{x}$O$_{2-y}$ (with M$ = $ Mg, V, Co, Cu, Zn, Nb, Ba, La, Sm, Gd, Yb, and Bi)are presented for dopant concentrations in the range $0.00 \leq x \leq 0.25$. The stability of the dopants is compared and discussed, and the influence of oxygen vacancies is investigated. It is shown that oxygen vacancies tend to increase the lattice parameter, and strongly decrease the bulk modulus. Defect formation energies are correlated with calculated crystal radii and covalent radii of the dopants, but are shown to present no simple trend. The previously observed inverse relation between the thermal expansion coefficient and the bulk modulus is shown to persist independent of the inclusion of charge compensating vacancies.
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Submitted 14 November, 2013;
originally announced November 2013.
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Tetravalent doping of CeO$_2$: The impact of valence electron character on group IV dopant influence
Authors:
D. E. P. Vanpoucke,
S. Cottenier,
V. Van Speybroeck,
I. Van Driessche,
P. Bultinck
Abstract:
Fluorite CeO$_2$ doped with group IV elements is studied within the DFT and DFT+U framework. Concentration dependent formation energies are calculated for Ce$_{1-x}$Z$_x$O$_2$ (Z= C, Si, Ge, Sn, Pb, Ti, Zr, Hf) with $0\leq x \leq 0.25$ and a roughly decreasing trend with ionic radius is observed. The influence of the valence and near valence electronic configuration is discussed, indicating the im…
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Fluorite CeO$_2$ doped with group IV elements is studied within the DFT and DFT+U framework. Concentration dependent formation energies are calculated for Ce$_{1-x}$Z$_x$O$_2$ (Z= C, Si, Ge, Sn, Pb, Ti, Zr, Hf) with $0\leq x \leq 0.25$ and a roughly decreasing trend with ionic radius is observed. The influence of the valence and near valence electronic configuration is discussed, indicating the importance of filled $d$ and $f$ shells near the Fermi level for all properties investigated. A clearly different behavior of group IVa and IVb dopants is observed: the former are more suitable for surface modifications, the latter are more suitable for bulk modifications.\\ \indent For the entire set of group IV dopants, there exists an inverse relation between the change, due to doping, of the bulk modulus and the thermal expansion coefficients. Hirshfeld-I atomic charges show that charge transfer effects due to doping are limited to the nearest neighbor oxygen atoms.
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Submitted 14 November, 2013;
originally announced November 2013.
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Reply to 'Comment on "Extending Hirshfeld-I to bulk and periodic materials" '
Authors:
D. E. P. Vanpoucke,
I. Van Driessche,
P. Bultinck
Abstract:
The issues raised in the comment by T.A. Manz are addressed through the presentation of calculated atomic charges for NaF, NaCl, MgO, SrTiO$_3$ and La$_2$Ce$_2$O$_7$, using our previously presented method for calculating Hirshfeld-I charges in Solids [J. Comput. Chem.. doi: 10.1002/jcc.23088]. It is shown that the use of pseudo-valence charges is sufficient to retrieve the full all-electron Hirshf…
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The issues raised in the comment by T.A. Manz are addressed through the presentation of calculated atomic charges for NaF, NaCl, MgO, SrTiO$_3$ and La$_2$Ce$_2$O$_7$, using our previously presented method for calculating Hirshfeld-I charges in Solids [J. Comput. Chem.. doi: 10.1002/jcc.23088]. It is shown that the use of pseudo-valence charges is sufficient to retrieve the full all-electron Hirshfeld-I charges to good accuracy. Furthermore, we present timing results of different systems, containing up to over $200$ atoms, underlining the relatively low cost for large systems. A number of theoretical issues is formulated, pointing out mainly that care must be taken when deriving new atoms in molecules methods based on "expectations" for atomic charges.
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Submitted 14 November, 2013;
originally announced November 2013.
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Extending Hirshfeld-I to bulk and periodic materials
Authors:
D. E. P. Vanpoucke,
P. Bultinck,
I. Van Driessche
Abstract:
In this work, a method is described to extend the iterative Hirshfeld-I method, generally used for molecules, to periodic systems. The implementation makes use of precalculated pseudo-potential based charge density distributions, and it is shown that high quality results are obtained for both molecules and solids, such as ceria, diamond, and graphite. The use of such grids makes the implementation…
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In this work, a method is described to extend the iterative Hirshfeld-I method, generally used for molecules, to periodic systems. The implementation makes use of precalculated pseudo-potential based charge density distributions, and it is shown that high quality results are obtained for both molecules and solids, such as ceria, diamond, and graphite. The use of such grids makes the implementation independent of the solid state or quantum chemical code used for studying the system. The extension described here allows for easy calculation of atomic charges and charge transfer in periodic and bulk systems.
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Submitted 14 November, 2013;
originally announced November 2013.
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Tuning of CeO$_2$ buffer layers for coated superconductors through doping
Authors:
Danny E. P. Vanpoucke,
Stefaan Cottenier,
Veronique Van Speybroeck,
Patrick Bultinck,
Isabel Van Driessche
Abstract:
The appearance of microcracks in CeO$_2$ buffer layers, as used in buffer layer architectures for coated superconductors, indicates the presence of stress between this buffer layer and the substrate. This stress can originate from the differences in thermal expansion or differences in lattice parameters between the CeO$_2$ buffer layer and the substrate. In this article, we study, by means of \tex…
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The appearance of microcracks in CeO$_2$ buffer layers, as used in buffer layer architectures for coated superconductors, indicates the presence of stress between this buffer layer and the substrate. This stress can originate from the differences in thermal expansion or differences in lattice parameters between the CeO$_2$ buffer layer and the substrate. In this article, we study, by means of \textit{ab initio} density functional theory calculations, the influence of group IV doping elements on the lattice parameter and bulk modulus of CeO$_2$. Vegard's law behavior is found for the lattice parameter in systems without oxygen vacancies, and the Shannon crystal radii for the doping elements are retrieved from the lattice expansions. We show that the lattice parameter of the doped CeO$_2$ can be matched to that of the La$_2$Zr$_2$O$_7$ coated NiW substrate substrate for dopant concentrations of about $5\%$, and that bulk modulus matching is either not possible or would require extreme doping concentrations.
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Submitted 14 November, 2013;
originally announced November 2013.
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DFT study of La$_2$Ce$_2$O$_7$: disordered fluorite vs pyrochlore structure
Authors:
D. E. P. Vanpoucke,
P. Bultinck,
S. Cottenier,
V. Van Speybroeck,
I. Van Driessche
Abstract:
The crystal structure of Lanthanum Cerium Oxide (La$_2$Ce$_2$O$_7$) is investigated using \textit{ab initio} density functional theory (DFT) calculations. The relative stability of fluorite- and pyrochlore-like structures is studied through comparison of their formation energies. These formation energies show the pyrochlore structure to be favored over the fluorite structure, apparently contradict…
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The crystal structure of Lanthanum Cerium Oxide (La$_2$Ce$_2$O$_7$) is investigated using \textit{ab initio} density functional theory (DFT) calculations. The relative stability of fluorite- and pyrochlore-like structures is studied through comparison of their formation energies. These formation energies show the pyrochlore structure to be favored over the fluorite structure, apparently contradicting the conclusions based on experimental neutron and X-ray diffraction (XRD). By calculating and comparing XRD spectra for a set of differently ordered and random structures, we show that the pyrochlore structure is consistent with diffraction experiments. For these reasons, we suggest the pyrochlore structure as the ground state crystal structure for La$_2$Ce$_2$O$_7$. %we show that among the structures considered in this work, the pyrochlore geometry is clearly favorable over the disordered fluorite geometry.
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Submitted 14 November, 2013;
originally announced November 2013.
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Modeling 1D structures on semiconductor surfaces: Synergy of theory and experiment
Authors:
Danny E. P. Vanpoucke
Abstract:
Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry,…
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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt- and Au-induced nanowires on Ge(001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.
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Submitted 14 November, 2013;
originally announced November 2013.
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The Formation of Self-Assembled Nanowire Arrays on Ge(001): a DFT Study of Pt Induced Nanowire Arrays
Authors:
Danny E. P. Vanpoucke,
Geert Brocks
Abstract:
Nanowire (NW) arrays form spontaneously after high temperature annealing of a submonolayer deposition of Pt on a Ge(001) surface. These NWs are a single atom wide, with a length limited only by the underlying beta-terrace to which they are uniquely connected. Using ab-initio density functional theory (DFT) calculations we study possible geometries of the NWs and substrate. Direct comparison to exp…
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Nanowire (NW) arrays form spontaneously after high temperature annealing of a submonolayer deposition of Pt on a Ge(001) surface. These NWs are a single atom wide, with a length limited only by the underlying beta-terrace to which they are uniquely connected. Using ab-initio density functional theory (DFT) calculations we study possible geometries of the NWs and substrate. Direct comparison to experiment is made via calculated scanning tunneling microscope (STM) images. Based on these images, geometries for the beta-terrace and the NWs are identified, and a formation path for the nanowires as function of increasing local Pt density is presented. We show the beta-terrace to be a dimer row surface reconstruction with a checkerboard pattern of Ge-Ge and Pt-Ge dimers. Most remarkably, comparison of calculated to experimental STM images shows the NWs to consist of germanium atoms embedded in the Pt-lined troughs of the underlying surface, contrary to what was assumed previously in experiments.
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Submitted 1 February, 2011;
originally announced February 2011.
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CO adsorption on Pt induced Ge nanowires
Authors:
Danny E. P. Vanpoucke,
Geert Brocks
Abstract:
Using density functional theory, we investigate the possible adsorption sites of CO molecules on the recently discovered Pt induced Ge nanowires on Ge(001). Calculated STM images are compared to experimental STM images to identify the experimentally observed adsorption sites. The CO molecules are found to adsorb preferably onto the Pt atoms between the Ge nanowire dimer segments. This adsorption s…
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Using density functional theory, we investigate the possible adsorption sites of CO molecules on the recently discovered Pt induced Ge nanowires on Ge(001). Calculated STM images are compared to experimental STM images to identify the experimentally observed adsorption sites. The CO molecules are found to adsorb preferably onto the Pt atoms between the Ge nanowire dimer segments. This adsorption site places the CO in between two nanowire dimers, pushing them outward, blocking the nearest equivalent adsorption sites. This explains the observed long-range repulsive interaction between CO molecules on these Pt induced nanowires.
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Submitted 1 February, 2011; v1 submitted 3 September, 2009;
originally announced September 2009.
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Pt-induced nanowires on Ge(001): a DFT study
Authors:
Danny E. P. Vanpoucke,
Geert Brocks
Abstract:
We study formation of the nanowires formed after deposition of Pt on a Ge(001) surface. The nanowires form spontaneously after high temperature annealing. They are thermodynamically stable, only one atom wide and up to a few hundred atoms long. Ab initio density functional theory calculations are performed to identify possible structures of the Pt-Ge (001) surface with nanowires on top. A large nu…
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We study formation of the nanowires formed after deposition of Pt on a Ge(001) surface. The nanowires form spontaneously after high temperature annealing. They are thermodynamically stable, only one atom wide and up to a few hundred atoms long. Ab initio density functional theory calculations are performed to identify possible structures of the Pt-Ge (001) surface with nanowires on top. A large number of structures is studied. With nanowires that are formed out of Pt or Ge dimers or mixed Pt-Ge dimers. By comparing simulated scanning tunneling microscopy images with experimental ones we model the formation of the nanowires and identify the geometries of the different phases in the formation process. We find that the formation of nanowires on a Pt-Ge(001) surface is a complex process based on increasing the Pt density in the top layers of the Ge(001) surface. Most remarkably we find the nanowires to consist of germanium dimers placed in troughs lined by mixed Pt-Ge dimer rows.
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Submitted 1 February, 2011; v1 submitted 19 January, 2009;
originally announced January 2009.
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DFT study of Pt-induced Ge(001) reconstructions
Authors:
Danny E. P. Vanpoucke,
Geert Brocks
Abstract:
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodynamically stable and can be hundreds of atoms long. The nanowires only occur on a reconstructed Pt-Ge-surface where they fill the troughs between the dimer rows on the surface. This unique connection between the nanowires and the underlying substrate make a thorough understanding of the latter necess…
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Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodynamically stable and can be hundreds of atoms long. The nanowires only occur on a reconstructed Pt-Ge-surface where they fill the troughs between the dimer rows on the surface. This unique connection between the nanowires and the underlying substrate make a thorough understanding of the latter necessary for understanding the growth of the nanowires. In this paper we study possible surface reconstructions containing 0.25 and 0.5 of a monolayer of Pt. Comparison of calculated STM images to experimental STM images of the surface reconstruction reveal that the Pt atoms are located in the top layer, creating a structure with rows of alternating Pt-Ge and Ge-Ge dimers in a c(4x2) arrangement. Our results also show that Pt atoms in the second or third layer can not be responsible for the experimentally observed STM images.
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Submitted 1 February, 2011; v1 submitted 19 January, 2009;
originally announced January 2009.
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Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a DFT study
Authors:
Danny E. P. Vanpoucke,
Geert Brocks
Abstract:
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning tunneling microscopy images are compared to the calculated local densities of states. On the ba…
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Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning tunneling microscopy images are compared to the calculated local densities of states. On the basis of this comparison and the stability of the structures, we conclude that the formation of nanowires is driven by an increased concentration of Pt atoms in the Ge surface layers. Surprisingly, the atomic nanowires consist of Ge instead of Pt atoms.
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Submitted 2 June, 2008; v1 submitted 11 April, 2008;
originally announced April 2008.
