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Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
Authors:
I. Fattal,
J. Van Damme,
B. Raes,
C. Godfrin,
G. Jaliel,
K. Chen,
T. Van Caekenberghe,
A. Loenders,
S. Kubicek,
S. Massar,
Y. Canvel,
J. Jussot,
Y. Shimura,
R. Loo,
D. Wan,
M. Mongillo,
K. De Greve
Abstract:
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolit…
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Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolithically integrated SET placed next to a double quantum dot in a Si/SiGe heterostructure is wire-bonded to a superconducting niobium inductor forming the impedance-transforming network. Compared to RF reflectometry, the proposed set-up is experimentally simpler without the need for directional couplers. Read-out performance is benchmarked by the signal-to-noise (SNR) of a dot-reservoir transition (DRT) and an interdot charge transition (ICT) in the double quantum dot near the SET as a function of RF power and integration time. The minimum integration time for unitary SNR is found to be 100 ns for ICT and 300 ns for DRT. The obtained minimum integration times are comparable to the state of the art in conventional RF reflectometry set-ups. Furthermore, we study the turn-on properties of the RF-SET to investigate capacitive shifts and RF losses. Understanding these effects are crucial for further optimisations of the impedance transforming network as well as the device design to assist RF read-out. This new RF read-out scheme also shows promise for multiplexing spin-qubit readout and further studies on rapid charge dynamics in quantum dots.
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Submitted 7 April, 2025;
originally announced April 2025.
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Reversing Hydrogen-Related Loss in $α$-Ta Thin Films for Quantum Device Fabrication
Authors:
D. P. Lozano,
M. Mongillo,
B. Raes,
Y. Canvel,
S. Massar,
A. M. Vadiraj,
Ts. Ivanov,
R. Acharya,
J. Van Damme,
J. Van de Vondel,
D. Wan,
A. Potocnik,
K. De Greve
Abstract:
$α$-Tantalum ($α$-Ta) is an emerging material for superconducting qubit fabrication due to the low microwave loss of its stable native oxide. However, hydrogen absorption during fabrication, particularly when removing the native oxide, can degrade performance by increasing microwave loss. In this work, we demonstrate that hydrogen can enter $α…
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$α$-Tantalum ($α$-Ta) is an emerging material for superconducting qubit fabrication due to the low microwave loss of its stable native oxide. However, hydrogen absorption during fabrication, particularly when removing the native oxide, can degrade performance by increasing microwave loss. In this work, we demonstrate that hydrogen can enter $α$-Ta thin films when exposed to 10 vol% hydrofluoric acid for 3 minutes or longer, leading to an increase in power-independent ohmic loss in high-Q resonators at millikelvin temperatures. Reduced resonator performance is likely caused by the formation of non-superconducting tantalum hydride (TaH$_x$) precipitates. We further show that annealing at 500°C in ultra-high vacuum (10$^{-8}$ Torr) for one hour fully removes hydrogen and restores the resonators' intrinsic quality factors to ~4 million at the single-photon level. These findings identify a previously unreported loss mechanism in $α$-Ta and offer a pathway to reverse hydrogen-induced degradation in quantum devices based on Ta and, by extension also Nb, enabling more robust fabrication processes for superconducting qubits.
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Submitted 17 March, 2025;
originally announced March 2025.
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Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
Authors:
D. P. Lozano,
M. Mongillo,
X. Piao,
S. Couet,
D. Wan,
Y. Canvel,
A. M. Vadiraj,
Ts. Ivanov,
J. Verjauw,
R. Acharya,
J. Van Damme,
F. A. Mohiyaddin,
J. Jussot,
P. P. Gowda,
A. Pacco,
B. Raes,
J. Van de Vondel,
I. P. Radu,
B. Govoreanu,
J. Swerts,
A. Potočnik,
K. De Greve
Abstract:
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised…
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The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.
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Submitted 30 November, 2022; v1 submitted 29 November, 2022;
originally announced November 2022.
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Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
Authors:
J. Verjauw,
R. Acharya,
J. Van Damme,
Ts. Ivanov,
D. Perez Lozano,
F. A. Mohiyaddin,
D. Wan,
J. Jussot,
A. M. Vadiraj,
M. Mongillo,
M. Heyns,
I. Radu,
B. Govoreanu,
A. Potočnik
Abstract:
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and li…
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As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and lift-off techniques used for current, state-of-the art superconducting qubits are generally incompatible with modern day manufacturable processes. Here, we demonstrate a fully CMOS compatible qubit fabrication method, and show results from overlap Josephson junction devices with long coherence and relaxation times, on par with the state-of-the-art. We experimentally verify that Argon milling - the critical step during junction fabrication - and a subtractive etch process nevertheless result in qubits with average qubit energy relaxation times T1 reaching 70 $μ$s, with maximum values exceeding 100 $μ$s. Furthermore, we show that our results are still limited by surface losses and not, crucially, by junction losses. The presented fabrication process therefore heralds an important milestone towards a manufacturable 300 mm CMOS process for high-coherence superconducting qubits and has the potential to advance the scaling of superconducting device architectures.
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Submitted 21 February, 2022;
originally announced February 2022.
