Showing 1–9 of 9 results for author: Valle, N

Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer

Authors: Taowen Wang, Longfei Song, Saeed Bayat, Michele Melchiorre, Nathalie Valle, Adrian-Marie Philippe, Emmanuel Defay, Sebastjan Glinsek, Susanne Siebentritt

Abstract: Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard Cu(In,Ga)Se2 backside recombination is suppressed by a bandgap gradient, acting as a back surface field. This gradient is difficult to maintain in sub-micron th… ▽ More Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard Cu(In,Ga)Se2 backside recombination is suppressed by a bandgap gradient, acting as a back surface field. This gradient is difficult to maintain in sub-micron thick absorbers. In this study, a hole transport layer passivates the back contact and enables efficient sub-micron Cu(In,Ga)Se2 solar cells without the need of a Ga gradient. The backside passivation by the hole transport layer is as effective as an optimized Ga gradient, resulting in a significant increase in open-circuit voltage by 80 mV in comparison to the reference sample without passivation. Moreover, the hole transport layer exhibits good transport properties, leading to a fill factor as high as 77%. Photoluminescence quantum yield of 0.15% and solar cell efficiency above 18% are demonstrated in sub-micron Cu(In,Ga)Se2 absorbers. △ Less

Submitted 6 May, 2025; originally announced May 2025.

The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells

Authors: Sevan Gharabeiki, Francesco Lodola, Tilly Schaaf, Taowen Wang, Michele Melchiorre, Nathalie Valle, Jérémy Niclout, Manha Ali, Yucheng Hu, Gunnar Kusch, Rachel A. Oliver, Susanne Siebentritt

Abstract: The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transition. This broadening effect has been attributed to band gap fluctuations and or to Urbach tails. In this report, we use modelling based on Planck s generalized law to distinguish between these two effects. Our results d… ▽ More The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transition. This broadening effect has been attributed to band gap fluctuations and or to Urbach tails. In this report, we use modelling based on Planck s generalized law to distinguish between these two effects. Our results demonstrate that Urbach tails have only a minimal effect on the absorptance edge broadening and clarify that even an ideal direct semiconductor with no band gap fluctuations shows broadening at the absorptance onset. Furthermore, state of the art inorganic thin film solar cells often incorporate a band gap gradient across their thickness, which can further contribute to absorptance broadening. Using Cu(In,Ga)Se2 (CIGSe) absorbers as a case study, we perform a comprehensive analysis of voltage losses through absolute photoluminescence and electroluminescence spectroscopy, combined with photospectrometry and high-spatial-resolution cathodoluminescence measurements. We find that the loss analysis based on the combination of radiative, generation and non-radiative losses is complete. Samples with a graded band gap profile show more pronounced broadening of the absorptance onset and up to 16 mV higher radiative losses compared to the samples with uniform band gap. There is indication, that band gap-graded samples also have larger lateral band gap inhomogeneity. △ Less

Submitted 18 March, 2025; originally announced March 2025.

Ferroelectric HfO$_2$-ZrO$_2$ multilayers with reduced wake-up

Authors: Barnik Mandal, Adrian-Marie Philippe, Nathalie Valle, Emmanuel Defay, Torsten Granzow, Sebastjan Glinsek

Abstract: Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this approach has not yet been fully explored in HfO$_2$-ZrO$_2$ films. This work demonstrates ferroelectricity in a 50 nm thick, solution-processed HfO$_2$-ZrO$_2$ mult… ▽ More Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this approach has not yet been fully explored in HfO$_2$-ZrO$_2$ films. This work demonstrates ferroelectricity in a 50 nm thick, solution-processed HfO$_2$-ZrO$_2$ multilayer film, marking it as the thickest multilayer film to date exhibiting ferroelectric properties. The multilayer structure was confirmed through transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy, with high-resolution TEM revealing grain continuity across multiple layers. This finding indicates that a polar phase in the originally paraelectric ZrO$_2$ layer, can be stabilized by the HfO$_2$ layer. The film attains a remanent polarization of 9 uC/cm$^2$ and exhibits accelerated wake-up behavior, attributed to its higher breakdown strength resulting from the incorporation of multiple interfaces. These results offer a faster wake-up mechanism for thick ferroelectric hafnia films. △ Less

Submitted 29 March, 2025; v1 submitted 13 November, 2024; originally announced November 2024.

Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages

Authors: Thomas Paul Weiss, Ignacio Minguez-Bacho, Elena Zuccalà, Michele Melchiorre, Nathalie Valle, Brahime El Adib, Tadahiro Yokosawa, Erdmann Spiecker, Julien Bachmann, Phillip J. Dale, Susanne Siebentritt

Abstract: Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recom… ▽ More Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature dependent current-voltage characteristics. It is found that a post-deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb$_2$Se$_3$ absorber. The increased activation energy is accompanied by an increased photoluminescence yield, i.e. reduced non-radiative recombination. Finished Sb$_2$Se$_3$ solar cell devices reach open circuit voltages as high as 485 mV. Contrarily, the short-circuit current density of these devices is limiting the efficiency after the post-deposition annealing. It is shown that atomic layer deposited intermediate buffer layers such as TiO$_2$ or Sb$_2$Se$_3$ can pave the way for overcoming this limitation. △ Less

Submitted 26 April, 2022; originally announced April 2022.

Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence

Authors: T. Wang, F. Ehre, T. P. Weiss, B. Veith-Wolf, V. Titova, N. Valle, M. Melchiorre, J. Schmidt, S. Siebentritt

Abstract: Metastable defects can decisively influence the diode factor and thus the efficiency of a solar cell. The diode factor is also influenced by the doping level and the recombination mechanisms in the solar cell. Here we quantify how the various parameters change the diode factor by photoluminescence measurements and simulations. In addition, we show that backside recombination reduces the open circu… ▽ More Metastable defects can decisively influence the diode factor and thus the efficiency of a solar cell. The diode factor is also influenced by the doping level and the recombination mechanisms in the solar cell. Here we quantify how the various parameters change the diode factor by photoluminescence measurements and simulations. In addition, we show that backside recombination reduces the open circuit voltage in CuInSe2 solar cells by more than 40 mV. Passivation by a Ga gradient is shown to be as efficient as a passivation by dielectric layers. Increased backside recombination reduces the diode factor, not because of less metastable defect transformation but because of a sublinear increase in photo generated carriers with excitation. This reduction in diode factor is unwanted, since the increased recombination reduces the voltage. A higher doping level, on the other hand, reduces the diode factor, thereby increasing the fill factor, and at the same time increases the voltage. △ Less

Submitted 13 April, 2022; originally announced April 2022.

Critical field anisotropy in the antiferroelectric switching of PbZrO3 films

Authors: Cosme Milesi-Brault, Nicolas Godard, Stéphanie Girod, Yves Fleming, Brahime El Adib, Nathalie Valle, Sebastjan Glinsek, Emmanuel Defay, Mael Guennou

Abstract: Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e. the possibility to induce a phase transition to a polar phase by an electric field. Here we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed… ▽ More Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e. the possibility to induce a phase transition to a polar phase by an electric field. Here we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behaviour is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature. △ Less

Submitted 21 December, 2020; v1 submitted 14 September, 2020; originally announced September 2020.

Topologically protected states in $δ$-doped junctions with band inversion

Authors: A. Diaz-Fernandez, N. del Valle, E. Diaz, F. Dominguez-Adame

Abstract: A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty to isolate their response from that of the bulk. In this work, we propose to deposit a $δ$ layer of donor… ▽ More A topological boundary can be formed at the interface between a trivial and a topological insulator. The difference in the topological index across the junction leads to robust gapless surface states. Optical studies of these states are scarce in the literature, the reason being the difficulty to isolate their response from that of the bulk. In this work, we propose to deposit a $δ$ layer of donor impurities in close proximity to a topological boundary to help detecting gapless surface states. As we will show, gapless surface states are robust against this perturbation and they enhance intraband optical transitions as measured by the oscillator strength. These results allow to understand the interplay of surface and bulk states in topological insulators. △ Less

Submitted 24 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. B 98, 085424 (2018)

Robust midgap states in band-inverted junctions under electric and magnetic fields

Authors: A. Diaz-Fernandez, N. del Valle, F. Dominguez-Adame

Abstract: Several IV-VI semiconductor compounds made of heavy atoms, such as Pb$_{1-x}$Sn$_{x}$Te, may undergo band-inversion at the $L$ point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to topologically distinct phases, characterized by a change in a topological invariant. In the framework of the $\mathbf{k}\cdot\mathbf{p}$ theory, band-inversion can be vie… ▽ More Several IV-VI semiconductor compounds made of heavy atoms, such as Pb$_{1-x}$Sn$_{x}$Te, may undergo band-inversion at the $L$ point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to topologically distinct phases, characterized by a change in a topological invariant. In the framework of the $\mathbf{k}\cdot\mathbf{p}$ theory, band-inversion can be viewed as a change of sign of the fundamental gap. A two-band model within the envelope-function approximation predicts the appearance of midgap interface states with Dirac cone dispersions in band-inverted junctions, namely, when the gap changes sign along the growth direction. We present a thorough study of these interface electron states in the presence of crossed electric and magnetic fields, the electric field being applied along the growth direction of a band-inverted junction. We show that the Dirac cone is robust and persists even if the fields are strong. In addition, we point out that Landau levels of electron states lying in the semiconductor bands can be tailored by the electric field. Tunable devices are thus likely to be realizable exploiting the properties studied herein. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Beilstein J. Nanotechnol. 2018, 9, 1405

New Reversal Mode in Exchange Coupled Antiferromagnetic/Ferromagnetic Disks: Distorted Viscous Vortex

Authors: Dustin A. Gilbert, Li Ye, Aïda Varea, Sebastià Agramunt-Puig, Nuria del Valle, Carles Navau, José Francisco López-Barbera, Kristen S. Buchanan, Axel Hoffmann, Alvar Sánchez, Jordi Sort, Kai Liu, Josep Nogués

Abstract: Magnetic vortices have generated intense interest in recent years due to their unique reversal mechanisms, fascinating topological properties, and exciting potential applications. Additionally, the exchange coupling of magnetic vortices to antiferromagnets has also been shown to lead to a range of novel phenomena and functionalities. Here we report a new magnetization reversal mode of magnetic vor… ▽ More Magnetic vortices have generated intense interest in recent years due to their unique reversal mechanisms, fascinating topological properties, and exciting potential applications. Additionally, the exchange coupling of magnetic vortices to antiferromagnets has also been shown to lead to a range of novel phenomena and functionalities. Here we report a new magnetization reversal mode of magnetic vortices in exchange coupled Ir20Mn80/Fe20Ni80 microdots: distorted viscous vortex reversal. Contrary to the previously known or proposed reversal modes, the vortex is distorted close to the interface and viscously dragged due to the uncompensated spins of a thin antiferromagnet, which leads to unexpected asymmetries in the annihilation and nucleation fields. These results provide a deeper understanding of the physics of exchange coupled vortices and may also have important implications for applications involving exchange coupled nanostructures. △ Less

Submitted 27 April, 2015; originally announced April 2015.

Comments: 27 pages, 4 figures and a supplemental information section

Journal ref: Nanoscale, 7, 9878 - 9885 (2015)