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Analog control of electrical conductivity in La0.5Sr0.5FeO3-δ through oxygen deficiency induced magnetic transition
Authors:
Paul Nizet,
Francesco Chiabrera,
Nicolau López-Pintó,
Nerea Alayo,
Philipp Langner,
Sergio Valencia,
Arantxa Fraile-Rodríguez,
Federico Baiutti,
Alevtina Smekhova,
Alex Morata,
Jordi Sort,
Albert Tarancón
Abstract:
Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays. One of the most exciting approaches to modulate materials performance is mobile ion/vacancy insertion for inducing changes in relevant electrical, optical, or m…
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Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays. One of the most exciting approaches to modulate materials performance is mobile ion/vacancy insertion for inducing changes in relevant electrical, optical, or magnetic properties, among others. Unveiling the interplay between changes in the concentration of mobile defects (like oxygen vacancies) and functional properties in relevant materials represents a step forward for underpinning the emerging oxide iontronics discipline. In this work, electrochemical oxide-ion pumping cells were fabricated for an analog control of the oxygen stoichiometry in thin films of mixed ionic-electronic conductor La0.5Sr0.5FeO3-δ. We demonstrate over more than 4 orders of magnitude electronic conductivity control within the same crystallographic phase through the precise and continuous voltage control of the oxygen stoichiometry. We show that behind the modification of the transport properties of the material lays a paramagnetic-to-antiferromagnetic transition. We exploit such magnetoelectric coupling to show control over the exchange interaction between La0.5Sr0.5FeO3-δ and a ferromagnetic Co layer deposited on top.
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Submitted 6 August, 2024; v1 submitted 5 August, 2024;
originally announced August 2024.
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Configuration of the magnetosome chain: a natural magnetic nanoarchitecture
Authors:
I. Orue,
L. Marcano,
P. Bender,
A. García-Prieto,
S. Valencia,
M. A. Mawass,
D. Gil-Cartón,
D. Alba Venero,
D. Honecker,
A. García-Arribas,
L. Fernández Barquín,
A. Muela,
M. L. Fdez-Gubieda
Abstract:
Magnetospirillum gryphiswaldense is a microorganism with the ability to biomineralize magnetite nanoparticles, called magnetosomes, and arrange them into a chain that behaves like a magnetic compass. Rather than straight lines, magnetosome chains are slightly bent, as evidenced by electron cryotomography. Our experimental and theoretical results suggest that due to the competition between the magn…
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Magnetospirillum gryphiswaldense is a microorganism with the ability to biomineralize magnetite nanoparticles, called magnetosomes, and arrange them into a chain that behaves like a magnetic compass. Rather than straight lines, magnetosome chains are slightly bent, as evidenced by electron cryotomography. Our experimental and theoretical results suggest that due to the competition between the magnetocrystalline and shape anisotropies, the effective magnetic moment of individual magnetosomes is tilted out of the [111] crystallographic easy axis of magnetite. This tilt does not affect the direction of the chain net magnetic moment, which remains along the [111] axis, but explains the arrangement of magnetosomes in helical-like shaped chains. Indeed, we demonstrate that the chain shape can be reproduced by considering an interplay between the magnetic dipolar interactions between magnetosomes, ruled by the orientation of the magnetosome magnetic moment, and a lipid/protein-based mechanism, modeled as an elastic recovery force exerted on the magnetosomes.
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Submitted 9 February, 2024;
originally announced February 2024.
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Domain nucleation across the metal-insulator transition of self-strained V2O3 films
Authors:
Alexandre Pofelski,
Sergio Valencia,
Yoav Kalcheim,
Pavel Salev,
Alberto Rivera,
Chubin Huang,
Mohamad A. Mawass,
Florian Kronast,
Ivan K. Schuller,
Yimei Zhu,
Javier del Valle
Abstract:
Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-ori…
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Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.
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Submitted 14 December, 2023;
originally announced December 2023.
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Size-dependence and high temperature stability of radial vortex magnetic textures imprinted by superconductor stray fields
Authors:
D. Sanchez-Manzano,
G. Orfila,
A. Sander,
L. Marcano,
F. Gallego,
M. A. Mawass,
F. Grilli,
A. Arora,
A. Peralta,
F. A. Cuellar,
J. A. Fernandez-Roldan,
N. Reyren,
F. Kronast,
C. Leon,
A. Rivera-Calzada,
J. E. Villegas,
J. Santamaria,
S. Valencia
Abstract:
Swirling spin textures, including topologically non-trivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental and applied points of view. However, their creation, controlled manipulation, and stability are typically constrained to certain systems with specific crystall…
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Swirling spin textures, including topologically non-trivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental and applied points of view. However, their creation, controlled manipulation, and stability are typically constrained to certain systems with specific crystallographic symmetries, bulk, or interface interactions, and/or a precise stacking sequence of materials. Here, we make use of the stray field of YBa2Cu3O7-δ superconducting microstructures in ferromagnet/superconductor hybrids to imprint magnetic radial vortices in permalloy at temperatures below the superconducting transition temperature (TC), a method easily extended to other ferromagnets with in-plane magnetic anisotropy. We examine the size dependence and temperature stability of the imprinted magnetic configurations. We show that above TC, magnetic domains retain memory of the imprinted spin texture. Micromagnetic modelling coupled with a SC field model reveals that the stabilization mechanism leading to this memory effect is mediated by microstructural defects. Superconducting control of swirling spin textures below and above the superconducting transition temperature holds promising prospects for shaping spintronics based on magnetic textures.
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Submitted 17 October, 2023;
originally announced October 2023.
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Probing magnetic ordering in air stable iron-rich van der Waals minerals
Authors:
Muhammad Zubair Khan,
Oleg E. Peil,
Apoorva Sharma,
Oleksandr Selyshchev,
Sergio Valencia,
Florian Kronast,
Maik Zimmermann,
Muhammad Awais Aslam,
Johann G. Raith,
Christian Teichert,
Dietrich R. T. Zahn,
Georgeta Salvan,
Aleksandar Matković,
Chair of Physics,
Department Physics,
Mechanics,
Electrical engineering,
Montanuniversität Leoben,
8700,
Leoben,
Austria.,
Materials Center Leoben Forschung GmbH,
8700,
Leoben,
Austria.
, et al. (24 additional authors not shown)
Abstract:
In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layere…
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In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layered magnetic materials have been vastly overlooked. These minerals offer a unique opportunity to explore air-stable complex layered systems with high concentration of local moment bearing ions. We demonstrate magnetic ordering in iron-rich two-dimensional phyllosilicates, focusing on mineral species of minnesotaite, annite, and biotite. These are naturally occurring van der Waals magnetic materials which integrate local moment baring ions of iron via magnesium/aluminium substitution in their octahedral sites. Due to self-inherent capping by silicate/aluminate tetrahedral groups, ultra-thin layers are air-stable. Chemical characterization, quantitative elemental analysis, and iron oxidation states were determined via Raman spectroscopy, wavelength disperse X-ray spectroscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Superconducting quantum interference device magnetometry measurements were performed to examine the magnetic ordering. These layered materials exhibit paramagnetic or superparamagnetic characteristics at room temperature. At low temperature ferrimagnetic or antiferromagnetic ordering occurs, with the critical ordering temperature of 38.7 K for minnesotaite, 36.1 K for annite, and 4.9 K for biotite. In-field magnetic force microscopy on iron bearing phyllosilicates confirmed the paramagnetic response at room temperature, present down to monolayers.
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Submitted 13 April, 2023;
originally announced April 2023.
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Strain-induced Shape Anisotropy in Antiferromagnetic Structures
Authors:
Hendrik Meer,
Olena Gomonay,
Christin Schmitt,
Rafael Ramos,
Leo Schnitzspan,
Florian Kronast,
Mohamad-Assaad Mawass,
Sergio Valencia,
Eiji Saitoh,
Jairo Sinova,
Lorenzo Baldrati,
Mathias Kläui
Abstract:
We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by…
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We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.
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Submitted 1 September, 2022; v1 submitted 5 May, 2022;
originally announced May 2022.
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Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$
Authors:
Jin Hong Lee,
Takayuki Harada,
Felix Trier,
Lourdes Marcano,
Florian Godel,
Sergio Valencia,
Atsushi Tsukazaki,
Manuel Bibes
Abstract:
Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivitie…
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Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials.
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Submitted 29 September, 2021;
originally announced September 2021.
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Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
Authors:
Christin Schmitt,
Lorenzo Baldrati,
Luis Sanchez-Tejerina,
Felix Schreiber,
Andrew Ross,
Mariia Filianina,
Shilei Ding,
Felix Fuhrmann,
Rafael Ramos,
Francesco Maccherozzi,
Dirk Backes,
Mohamad A. Mawass,
Florian Kronast,
Sergio Valencia,
Eiji Saitoh,
Giovanni Finocchio,
Mathias Kläui
Abstract:
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes.…
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Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.
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Submitted 28 February, 2021; v1 submitted 19 August, 2020;
originally announced August 2020.
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Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films
Authors:
Andrew Ross,
Romain Lebrun,
Camilo Ulloa,
Daniel A. Grave,
Asaf Kay,
Lorenzo Baldrati,
Florian Kronast,
Sergio Valencia,
Avner Rothschild,
Mathias Kläui
Abstract:
Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse…
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Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.
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Submitted 15 July, 2020; v1 submitted 9 January, 2020;
originally announced January 2020.
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Giant topological Hall effect in correlated oxide thin films
Authors:
Lorenzo Vistoli,
Wenbo Wang,
Anke Sander,
Qiuxiang Zhu,
Blai Casals,
Rafael Cichelero,
Agnès Barthélémy,
Stéphane Fusil,
Gervasi Herranz,
Sergio Valencia,
Radu Abrudan,
Eugen Weschke,
Kazuki Nakazawa,
Hiroshi Kohno,
Jacobo Santamaria,
Weida Wu,
Vincent Garcia,
Manuel Bibes
Abstract:
Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in t…
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Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low doping, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields.
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Submitted 19 September, 2019;
originally announced September 2019.
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Switching on superferromagnetism
Authors:
A. Arora,
L. C. Phillips,
P. Nukala,
M. Ben Hassine,
A. A. Ünal,
B. Dkhil,
Ll. Balcells,
O. Iglesias,
A. Barthélémy,
F. Kronast,
M. Bibes,
S. Valencia
Abstract:
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenu…
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Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenue for its implementation in magnetoelectric data storage devices. Here we show the possibility to locally switch on superferromagnetism in a wedge-shaped polycrystalline Fe thin film deposited on top of a ferroelectric and ferroelastic BaTiO3 substrate. A superparamagnetic to superferromagnetic transition is observed for confined regions for which a voltage applied to the ferroelectric substrate induces a sizable strain. We argue that electric-field-induced changes of magnetic anisotropy lead to an increase of the critical temperature separating the two regimes so that superparamagnetic regions develop collective long-range superferromagnetic behavior.
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Submitted 12 February, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
Authors:
Lorenzo Baldrati,
Olena Gomonay,
Andrew Ross,
Mariia Filianina,
Romain Lebrun,
Rafael Ramos,
Cyril Leveille,
Felix Fuhrmann,
Thomas Forrest,
Francesco Maccherozzi,
Sergio Valencia,
Florian Kronast,
Eiji Saitoh,
Jairo Sinova,
Mathias Kläui
Abstract:
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching…
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We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
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Submitted 15 August, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Spin-orbit effects surfacing on manganites
Authors:
S. Valencia,
M. J. Calderón,
L. López-Mir,
Z. Kostantinovic,
E. Schierle,
E. Weschke,
L. Brey,
B. Martínez,
Ll. Balcells
Abstract:
Spin-orbit coupling in magnetic systems lacking inversion symmetry can give rise to non trivial spin textures. Magnetic thin films and heterostructures are potential candidates for the formation of skyrmions and other non-collinear spin configurations as inversion symmetry is inherently lost at their surfaces and interfaces. However, manganites, in spite of their extraordinarily rich magnetic phas…
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Spin-orbit coupling in magnetic systems lacking inversion symmetry can give rise to non trivial spin textures. Magnetic thin films and heterostructures are potential candidates for the formation of skyrmions and other non-collinear spin configurations as inversion symmetry is inherently lost at their surfaces and interfaces. However, manganites, in spite of their extraordinarily rich magnetic phase diagram, have not yet been considered of interest within this context as their spin-orbit coupling is assumed to be negligible. We demonstrate here, by means of angular dependent X-ray linear dichroism experiments and theoretical calculations, the existence of a noncollinear antiferromagnetic ordering at the surface of ferromagnetic La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin films whose properties can only be explained by an unexpectedly large enhancement of the spin-orbit interaction. Our results reveal that spin-orbit coupling, usually assumed to be very small on manganites, can be significantly enhanced at surfaces and interfaces adding a new twist to the possible magnetic orders that can arise in electronically reconstructed systems.
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Submitted 29 August, 2018;
originally announced August 2018.
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Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces
Authors:
M. N. Grisolia,
J. Varignon,
G. Sanchez-Santolino,
A. Arora,
S. Valencia,
M. Varela,
R. Abrudan,
E. Weschke,
E. Schierle,
J. E. Rault,
J. -P. Rueff,
A. Barthelemy,
J. Santamaria,
M. Bibes
Abstract:
At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more comp…
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At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more complex electronic structure, with charge, orbital and/or spin orders arising from correlations between transition metal and oxygen ions. Strong correlations thus offer a rich playground to engineer functional interfaces but their compatibility with the classical band alignment picture remains an open question. Here we show that beyond differences in electron affinities and polar effects, a key parameter determining charge transfer at correlated oxide interfaces is the energy required to alter the covalence of the metaloxygen bond. Using the perovskite nickelate (RNiO3) family as a template, we probe charge reconstruction at interfaces with gadolinium titanate GdTiO3. X-ray absorption spectroscopy shows that the charge transfer is thwarted by hybridization effects tuned by the rare-earth (R) size. Charge transfer results in an induced ferromagnetic-like state in the nickelate, exemplifying the potential of correlated interfaces to design novel phases. Further, our work clarifies strategies to engineer two-dimensional systems through the control of both doping and covalence.
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Submitted 29 August, 2017;
originally announced August 2017.
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Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: An insight into flexomagnetic phenomenon
Authors:
Jin Hong Lee,
Kwang-Eun Kim,
Byung-Kweon Jang,
Ahmet A. Ünal,
Sergio Valencia,
Florian Kronast,
Kyung-Tae Ko,
Stefan Kowarik,
Jan Seidel,
Chan-Ho Yang
Abstract:
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discover…
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Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discovered a correlation between an electrically-written straight-stripe mixed-phase boundary and an in-plane antiferromagnetic spin axis in highly-elongated La-5%-doped BiFeO$_{3}$ thin films by performing polarization-dependent photoemission electron microscopy in conjunction with cluster model calculations. Model Hamiltonian calculation for the single-ion anisotropy including the spin-orbit interaction has been performed to figure out the physical origin of the link between the strain gradient present in the mixed phase area and its antiferromagnetic spin axis. Our findings enable estimation of the strain-gradient-induced magnetic anisotropy energy per Fe ion at around 5$\times$10$^{-12}$ eV m, and provide a new pathway towards an electric-field-induced 90$^{\circ}$ rotation of antiferromagnetic spin axis at room temperature by flexomagnetism.
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Submitted 21 April, 2017;
originally announced April 2017.
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Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi$_{1-x}$Mn$_x)_2$Se$_3$
Authors:
J. Sánchez-Barriga,
A. Varykhalov,
G. Springholz,
H. Steiner,
R. Kirchschlager,
G. Bauer,
O. Caha,
E. Schierle,
E. Weschke,
A. A. Ünal,
S. Valencia,
M. Dunst,
J. Braun,
H. Ebert,
J. Minár,
E. Golias,
L. V. Yashina,
A. Ney,
V. Holý,
O. Rader
Abstract:
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surf…
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Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.
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Submitted 9 March, 2016;
originally announced March 2016.
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2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes
Authors:
Olivio Chiatti,
Christian Riha,
Dominic Lawrenz,
Marco Busch,
Srujana Dusari,
Jaime Sánchez-Barriga,
Anna Mogilatenko,
Lada V. Yashina,
Sergio Valencia,
Akin A. Ünal,
Oliver Rader,
Saskia F. Fischer
Abstract:
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related…
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Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.
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Submitted 6 June, 2016; v1 submitted 4 December, 2015;
originally announced December 2015.
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Ferrimagnetic nanostructures for magnetic memory bits
Authors:
A. A. Ünal,
S. Valencia,
D. Marchenko,
K. J. Merazzo,
F. Radu,
M. Vázquez,
J. Sánchez-Barriga
Abstract:
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the p…
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Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the potential of heat-assisted magnetic recording on a patterned sample; a ferrimagnetic alloy composed of a rare earth and a transition metal, DyCo$_5$, which is grown on a hexagonal-ordered nanohole array membrane. The magnetization of the antidot array sample is out-of-plane oriented at room temperature and rotates towards in-plane upon heating above its spin-reorientation temperature (T$_R$) of ~350 K, just above room temperature. Upon cooling back to room temperature (below T$_R$), we observe a well-defined and unexpected in-plane magnetic domain configuration modulating with ~45 nm. We discuss the underlying mechanisms giving rise to this behavior by comparing the magnetic properties of the patterned sample with the ones of its extended thin film counterpart. Our results pave the way for novel applications of ferrimagnetic antidot arrays of superior functionality in magnetic nano-devices near room temperature.
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Submitted 17 October, 2015;
originally announced October 2015.
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Local electrical control of magnetic order and orientation by ferroelastic domain arrangements just above room temperature
Authors:
L. C. Phillips,
Ryan O. Cherifi,
Viktoria Ivanovskaya,
Alberto Zobelli,
Ingrid C. Infante,
Eric Jacquet,
Nicolas Guiblin,
Ahmet A. Unal,
Florian Kronast,
Brahim Dkhil,
Agnes Barthelemy,
Manuel Bibes,
Sergio Valencia
Abstract:
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic…
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Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics.
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Submitted 11 December, 2014;
originally announced December 2014.
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Intrinsic robust antiferromagnetism at manganite surfaces and interfaces
Authors:
S. Valencia,
L. Peña,
Z. Konstantinovic,
Ll. Balcells,
R. Galceran,
D. Schmitz,
F. Sandiumenge,
M. Casanove,
B. Martínez
Abstract:
Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. Thi…
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Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. This breakdown has been usually associated to surface and interface related problems but its physical origin has not been clearly established yet. In this work we investigate the interface between La2/3Sr1/3MnO3 (LSMO) thin films and different capping layers by means of x-ray linear dichroism and transport measurements. Our data reveal that, irrespective to the capping material, LSMO/capping layer bilayers exhibit an antiferromegnetic/insulating phase at the interface, likely to originate from a preferential occupancy of Mn 3d 3z2-r2 eg orbitals. This phase, which extends ca. 2 unit cells, is also observed in an uncapped LSMO reference sample thus, pointing to an intrinsic interfacial phase separation phenomenon, likely to be promoted by the structural disruption and symmetry breaking at the LSMO free surface/interface. These experimental observations strongly suggest that the structural disruption at the LSMO interfaces play a major role on the observed depressed magnetotransport properties in manganite-based magnetic tunneling junctions and it is at the origin of the so-called dead layer.
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Submitted 21 February, 2013;
originally announced February 2013.
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Magnetic frustration, phase competition and the magneto-electric effect in NdFe3(BO3)4
Authors:
J. E. Hamann-Borrero,
S. Partzsch,
S. Valencia,
C. Mazzoli,
J. Herrero-Martin,
R. Feyerherm,
E. Dudzik,
C. Hess,
A. Vasiliev,
L. Bezmaternykh,
B. Buechner,
J. Geck
Abstract:
We present an element selective resonant magnetic x-ray scattering study of NdFe3(BO3)4 as a function of temperature and applied magnetic field. Our measurements show that the magnetic order of the Nd sublattice is induced by the Fe spin order. When a magnetic field is applied parallel to the hexagonal basal plane, the helicoidal spin order is suppressed and a collinear ordering, where the moments…
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We present an element selective resonant magnetic x-ray scattering study of NdFe3(BO3)4 as a function of temperature and applied magnetic field. Our measurements show that the magnetic order of the Nd sublattice is induced by the Fe spin order. When a magnetic field is applied parallel to the hexagonal basal plane, the helicoidal spin order is suppressed and a collinear ordering, where the moments are forced to align in a direction perpendicular to the applied magnetic field, is stabilized. This result excludes a non-collinear spin order as the origin of the magnetically induced electric polarization in this compound. Instead our data imply that magnetic frustration results in a phase competition, which is the origin of the magneto-electric response.
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Submitted 30 July, 2012;
originally announced July 2012.
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Complex charge ordering in CeRuSn
Authors:
R. Feyerherm,
E. Dudzik,
S. Valencia,
J. A. Mydosh,
Y. -K. Huang,
W. Hermes,
R. Pöttgen
Abstract:
At ambient temperatures, CeRuSn exhibits an extraordinary structure with a coexistence of two types of Ce ions in a metallic environment, namely trivalent Ce3+ and intermediate valent Ce(4-x)+. Charge ordering produces a doubling of the unit cell along the c-axis with respect to the basic monoclinic CeCoAl type structure. Below room temperature, a phase transition with very broad hysteresis has be…
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At ambient temperatures, CeRuSn exhibits an extraordinary structure with a coexistence of two types of Ce ions in a metallic environment, namely trivalent Ce3+ and intermediate valent Ce(4-x)+. Charge ordering produces a doubling of the unit cell along the c-axis with respect to the basic monoclinic CeCoAl type structure. Below room temperature, a phase transition with very broad hysteresis has been observed in various bulk properties like electrical resistivity, magnetic susceptibility, and specific heat. The present x-ray diffraction results show that at low temperatures the doubling of the CeCoAl type structure is replaced by an ill-defined modulated ground state. In this state, at least three different modulation periods compete, with the dominant mode close to a tripling of the basic cell. The transition is accompanied by a significant contraction of the c axis. XANES data suggest that the average Ce valence remains constant, thus the observed c axis contraction is not due to any valence transition. We propose a qualitative structure model with modified stacking sequences of Ce3+ and Ce(4-x)+ layers in the various modulated phases. Surprisingly, far below 100 K the modulated state is sensitive to x-ray irradiation at photon fluxes available at a synchrotron. With photon fluxes of order 10E12/s, the modulated ground state can be destroyed on a timescale of minutes and the doubling of the CeCoAl cell observed at room temperature is recovered. The final state is metastable at 10 K. Heating the sample above 60 K again leads to a recovery of the modulated state. Thus, CeRuSn exhibits both thermally and x-ray induced reversible transformations of the Ce3+/Ce(4-x)+ charge ordering pattern. Such a behavior is unique among any know intermetallic compound.
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Submitted 24 November, 2011;
originally announced November 2011.
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Valence change of praseodymium in Pr0.5Ca0.5CoO3 investigated by x-ray absorption spectroscopy
Authors:
J. Herrero-Martín,
J. L. García-Muñoz,
S. Valencia,
C. Frontera,
J. Blasco,
A. J. Barón-González,
G. Subías,
R. Abrudan,
F. Radu,
E. Dudzik,
R. Feyerherm
Abstract:
X-ray absorption spectroscopy measurements in Pr0.5Ca0.5CoO3 were performed at the Pr M4,5, Pr L3, and Ca L2,3 absorption edges as a function of temperature below 300 K. Ca spectra show no changes down to 10 K while a noticeable thermally dependent evolution takes place at the Pr edges across the metal-insulator transition. Spectral changes are analyzed by different methods, including multiple sca…
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X-ray absorption spectroscopy measurements in Pr0.5Ca0.5CoO3 were performed at the Pr M4,5, Pr L3, and Ca L2,3 absorption edges as a function of temperature below 300 K. Ca spectra show no changes down to 10 K while a noticeable thermally dependent evolution takes place at the Pr edges across the metal-insulator transition. Spectral changes are analyzed by different methods, including multiple scattering simulations, which provide quantitative details on an electron loss at Pr 4f orbitals. We conclude that in the insulating phase a fraction [15(+5)%] of Pr3+ undergoes a further oxidation to adopt a hybridized configuration composed of an admixture of atomic-like 4f1 states (Pr4+) and f- symmetry states on the O 2p valence band (Pr3+L states) indicative of a strong 4f- 2p interaction.
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Submitted 5 September, 2011;
originally announced September 2011.
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Observation of a valence transition in (Pr,Ca)CoO3 cobaltites: charge migration at the metal-insulator transition
Authors:
José Luis García-Muñoz,
Carlos Frontera,
Aura J. Barón-González,
Sergio Valencia,
Javier Blasco,
Ralf Feyerherm,
Esther Dudzik,
Radu Abrudan,
Florin Radu
Abstract:
X-ray absorption spectroscopy measurements in Pr0.5Ca0.5CoO3 and (Pr,Y)0.55Ca0.45CoO3 compositions reveal that the valence of praseodymium ions is stable and essentially +3 (Pr [4f 2]) in the metallic state, but abruptly changes when carriers localize approaching the oxidation state +4 (Pr [4f 1]). This mechanism appears to be the driving force of the metal-insulator transition. The ground insulat…
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X-ray absorption spectroscopy measurements in Pr0.5Ca0.5CoO3 and (Pr,Y)0.55Ca0.45CoO3 compositions reveal that the valence of praseodymium ions is stable and essentially +3 (Pr [4f 2]) in the metallic state, but abruptly changes when carriers localize approaching the oxidation state +4 (Pr [4f 1]). This mechanism appears to be the driving force of the metal-insulator transition. The ground insulating state of Pr0.5Ca0.5CoO3 is an homogeneous Co3.5-d state stabilized by a charge transfer from Pr to Co sites: 1/2Pr3+ + Co3.5 \to 1/2Pr3+2d + Co3.5-d, with 2d \approx 0.26 e-.
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Submitted 18 March, 2011;
originally announced March 2011.
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Transition from a phase-segregated state to single-phase incommensurate sodium ordering in Na_xCoO_2 with x \approx 0.53
Authors:
R. Feyerherm,
E. Dudzik,
S. Valencia,
A. U. B. Wolter,
C. J. Milne,
S. Landsgesell,
D. Alber,
D. N. Argyriou
Abstract:
Synchrotron X-ray diffraction investigations of two single crystals of Na_xCoO_2 from different batches with composition x = 0.525-0.530 reveal homogeneous incommensurate sodium ordering with propagation vector (0.53 0.53 0) at room-temperature. The incommensurate (qq0) superstructure exists between 220 K and 430 K. The value of q varies between q = 0.514 and 0.529, showing a broad plateau at the…
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Synchrotron X-ray diffraction investigations of two single crystals of Na_xCoO_2 from different batches with composition x = 0.525-0.530 reveal homogeneous incommensurate sodium ordering with propagation vector (0.53 0.53 0) at room-temperature. The incommensurate (qq0) superstructure exists between 220 K and 430 K. The value of q varies between q = 0.514 and 0.529, showing a broad plateau at the latter value between 260 K and 360 K. On cooling, unusual reversible phase segregation into two volume fractions is observed. Below 220 K, one volume fraction shows the well-known commensurate orthorhombic x = 0.50 superstructure, while a second volume fraction with x = 0.55 exhibits another commensurate superstructure, presumably with a 6a x 6a x c hexagonal supercell. We argue that the commensurate-to-incommensurate transition is an intrinsic feature of samples with Na concentrations x = 0.5 + d with d ~ 0.03.
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Submitted 4 June, 2010; v1 submitted 28 April, 2010;
originally announced April 2010.
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Quadratic X-ray magneto-optical effect in reflection at the M-edges of 3d transition metals
Authors:
S. Valencia,
A. Kleibert,
A. Gaupp,
J. Rusz,
D. Legut,
J. Bansmann,
W. Gudat,
P. M. Oppeneer
Abstract:
We have observed a quadratic x-ray magneto-optical effect in near-normal incidence reflection at the M-edges of iron. The effect appears as the magnetically induced rotation of ca. 0.1$ degrees of the polarization plane of linearly polarized x-ray radiation upon reflection. A comparison of the measured rotation spectrum with results from x-ray magnetic linear dichroism data demonstrates that thi…
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We have observed a quadratic x-ray magneto-optical effect in near-normal incidence reflection at the M-edges of iron. The effect appears as the magnetically induced rotation of ca. 0.1$ degrees of the polarization plane of linearly polarized x-ray radiation upon reflection. A comparison of the measured rotation spectrum with results from x-ray magnetic linear dichroism data demonstrates that this is the first observation of the Schaefer-Hubert effect in the x-ray regime. Ab initio density-functional theory calculations reveal that hybridization effects of the 3p core states necessarely need to be considered when interpreting experimental data. The discovered magneto-x-ray effect holds promise for future ultrafast and element-selective studies of ferromagnetic as well as antiferromagnetic materials.
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Submitted 15 December, 2009;
originally announced December 2009.
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Dual Behavior of Antiferromagnetic Uncompensated Spins in NiFe/IrMn Exchange Biased Bilayers
Authors:
S. K. Mishra,
F. Radu,
S. Valencia,
D. Schmitz,
E. Schierle,
H. A. Dürr,
W. Eberhardt
Abstract:
We present a comprehensive study of the exchange bias effect in a model system. Through numerical analysis of the exchange bias and coercive fields as a function of the antiferromagnetic layer thickness we deduce the absolute value of the averaged anisotropy constant of the antiferromagnet. We show that the anisotropy of IrMn exhibits a finite size effect as a function of thickness. The interfac…
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We present a comprehensive study of the exchange bias effect in a model system. Through numerical analysis of the exchange bias and coercive fields as a function of the antiferromagnetic layer thickness we deduce the absolute value of the averaged anisotropy constant of the antiferromagnet. We show that the anisotropy of IrMn exhibits a finite size effect as a function of thickness. The interfacial spin disorder involved in the data analysis is further supported by the observation of the dual behavior of the interfacial uncompensated spins. Utilizing soft x-ray resonant magnetic reflectometry we have observed that the antiferromagnetic uncompensated spins are dominantly frozen with nearly no rotating spins due to the chemical intermixing, which correlates to the inferred mechanism for the exchange bias.
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Submitted 9 December, 2009;
originally announced December 2009.
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Mn valence instability in La2/3Ca1/3MnO3 thin films
Authors:
S. Valencia,
A. Gaupp,
W. Gudat,
Ll. Abad,
Ll. Balcells,
A. Cavallaro,
B. Martinez,
F. J. Palomares
Abstract:
A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie temperature well below that of the bulk material. Upon air exposure a reduction of the saturation magnetization, MS, of the films is detected. Simultaneously a Mn2+…
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A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie temperature well below that of the bulk material. Upon air exposure a reduction of the saturation magnetization, MS, of the films is detected. Simultaneously a Mn2+ spectral signature develops, in addition to the expected Mn3+ and Mn4+ contributions, which increases with time. The similarity of the spectral results obtained by total electron yield and fluorescence yield spectroscopy indicates that the location of the Mn valence anomalies is not confined to a narrow surface region of the film, but can extend throughout the whole thickness of the sample. High temperature annealing at 1000 C in air, immediately after growth, improves the magnetic and transport properties of such films towards the bulk values and the Mn2+ signature in the spectra does not appear. The Mn valence is then stable even to prolonged air exposure. We propose a mechanism for the Mn2+ ions formation and discuss the importance of these observations with respect to previous findings and production of thin films devices.
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Submitted 16 September, 2009;
originally announced September 2009.
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Magnetic-field induced effects on the electric polarization in RMnO3 (R = Dy, Gd)
Authors:
R. Feyerherm,
E. Dudzik,
A. U. B. Wolter,
S. Valencia,
O. Prokhnenko,
A. Maljuk,
S. Landsgesell,
N. Aliouane,
L. Bouchenoire,
S. Brown,
D. N. Argyriou
Abstract:
X-ray resonant magnetic scattering studies of rare earth magnetic ordering were performed on perovskite manganites RMnO3 (R = Dy, Gd) in an applied magnetic field. The data reveal that the field-induced three-fold polarization enhancement for H || a (H approx. 20 kOe) observed in DyMnO3 below 6.5 K is due to a re-emergence of the Mn-induced Dy spin order with propagation vector k(Dy) = k(Mn) = 0…
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X-ray resonant magnetic scattering studies of rare earth magnetic ordering were performed on perovskite manganites RMnO3 (R = Dy, Gd) in an applied magnetic field. The data reveal that the field-induced three-fold polarization enhancement for H || a (H approx. 20 kOe) observed in DyMnO3 below 6.5 K is due to a re-emergence of the Mn-induced Dy spin order with propagation vector k(Dy) = k(Mn) = 0.385 b*, which accompanies the suppression of the independent Dy magnetic ordering, k(Dy) = 1/2 b*. For GdMnO3, the Mn-induced ordering of Gd spins is used to track the Mn-ordering propagation vector. The data confirm the incommensurate ordering reported previously, with k(Mn) varying from 0.245 to 0.16 b* on cooling from T_N(Mn) down to a transition temperature T'. New superstructure reflections which appear below T' suggest a propagation vector k(Mn) = 1/4 b* in zero magnetic field, which may coexist with the previously reported A-type ordering of Mn. The Gd spins order with the same propagation vector below 7 K. Within the ordered state of Gd at T = 1.8 K we find a phase boundary for an applied magnetic field H || b, H = 10 kOe, which coincides with the previously reported transition between the ground state paraelectric and the ferroelectric phase of GdMnO3. Our results suggest that the magnetic ordering of Gd in magnetic field may stabilize a cycloidal ordering of Mn that, in turn, produces ferroelectricity.
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Submitted 24 February, 2009; v1 submitted 23 February, 2009;
originally announced February 2009.
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Magnetic dead layers in La2/3Ca1/3MnO3 thin films probed by X-ray magnetic circular dichroism in reflection
Authors:
S. Valencia,
A. Gaupp,
W. Gudat,
Ll. Abad,
Ll. Balcells,
B. Martinez
Abstract:
Surface magnetic properties of perovskite manganites have been a recurrent topic during last years since they play a major role in the implementation of magnetoelectronic devices. Magneto-optical techniques, such as X-ray magnetic circular dichroism, turn out to be a very efficient tool to study surface magnetism due to their sensitivity to magnetic and chemical variations across the sample dept…
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Surface magnetic properties of perovskite manganites have been a recurrent topic during last years since they play a major role in the implementation of magnetoelectronic devices. Magneto-optical techniques, such as X-ray magnetic circular dichroism, turn out to be a very efficient tool to study surface magnetism due to their sensitivity to magnetic and chemical variations across the sample depth. Nevertheless, the application of the sum rules for the determination of the spin magnetic moment might lead to uncertainties as large as 40% in case of Mn ions. To overcome this problem we present an alternative approach consisting of using X-ray magnetic circular dichroism in reflection geometry. Fit of the data by using a computer code based in a 4X4 matrix formalism leads to realistic results. In particular, we show that surface and interface roughness are of major relevance for a proper description of the experimental data and a correct interpretation of the results. By using such an approach we demonstrate the presence of a narrow surface region with strongly depressed magnetic properties in La2/3Ca1/3MnO3 thin films.
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Submitted 6 June, 2007;
originally announced June 2007.
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Formation of Mn2+ in La2/3Ca1/3MnO3 Thin Films due to Air Exposure
Authors:
S. Valencia,
A. Gaupp,
Ll. Abad,
Ll. Balcells,
F. J. Palomares,
A. Cavallaro,
B. Martinez,
W. Gudat
Abstract:
We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on LaAlO3 substrates. As-grown thin films, exhibiting Curie temperature, TC, well below that of the LCMO bulk material, develop an unexpected Mn2+ contribution af…
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We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on LaAlO3 substrates. As-grown thin films, exhibiting Curie temperature, TC, well below that of the LCMO bulk material, develop an unexpected Mn2+ contribution after a few days of air exposure which increases with time. Moreover, a reduction of the saturation magnetization, MS, is also detected. The similarity of the results obtained by electron yield and fluorescence yield demonstrates that the location of the Mn valence anomalies are not confined to a narrow surface region of the film but can extend throughout the film thickness in case of granular films. High temperature annealing not only improves the magnetic and transport properties of such as-grown films but also recovers the expected 2/3-1/3 Mn3+/Mn4+ ratio, which thereafter is stable to air exposure. Similar results on La2/3Ca1/3MnO3 films grown on SrTiO3 and NdGaO3 substrates demonstrate that there is no direct relation between the observed Mn valence instability and the strain state of the films due to their lattice mismatch with the substrate. A mechanism for the formation of Mn2+ ions formation is discussed.
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Submitted 20 September, 2005;
originally announced September 2005.