Strain-balanced type-II superlattices for efficient multi-junction solar cells
Authors:
A. Gonzalo,
A. D. Utrilla,
D. F. Reyes,
V. Braza,
J. M. Llorens,
D. Fuertes Marron,
B. Alen,
T. Ben,
D. Gonzalez,
A. Guzman,
A. Hierro,
J. M. Ulloa
Abstract:
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of bo…
▽ More
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of both elements in GaAsSbN layers. This approach not only reduces clustering and improves crystal quality and interface abruptness, but also allows for additional control of the effective bandgap in the 1.0-1.15 eV spectral region through the SL period thickness. The optimized SL structure exhibits a type-II band alignment and strong electronic coupling at 0 V. Both effects cooperate to increase the minority carrier collection and leads to a net strong enhancement of the external quantum efficiency (EQE) under photovoltaic conditions with respect to bulk layers of equivalent thickness.
△ Less
Submitted 21 December, 2016; v1 submitted 15 December, 2016;
originally announced December 2016.
Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology
Authors:
José M. Llorens,
Lukasz Wewior,
Edson R. Cardozo de Oliveira,
José M. Ulloa,
Antonio D. Utrilla,
Álvaro Guzmán,
Adrián Hierro,
Benito Alén
Abstract:
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuous…
▽ More
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
△ Less
Submitted 13 November, 2015; v1 submitted 8 June, 2015;
originally announced June 2015.
