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Reactive Molecular Dynamics Simulation on DNA Double Strand Breaks Induced by Hydrogen Elimination
Authors:
Hiroaki Nakamura,
Kento Ishiguro,
Ayako Nakata,
Shunsuke Usami,
Seiki Saito,
Susumu Fujiwara
Abstract:
We propose a scar model to reproduce how double-strand breaks occur in the telomeric DNA damaged by the effect of the $β$-decay of tritium to helium. In this scar model, the two hydrogens bonded to the 5$^\prime$ carbon connecting the pent saccharides and phosphate are removed. Molecular dynamics simulations using the reactive force field are carried out for 10 cases for the telomeric DNA consisti…
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We propose a scar model to reproduce how double-strand breaks occur in the telomeric DNA damaged by the effect of the $β$-decay of tritium to helium. In this scar model, the two hydrogens bonded to the 5$^\prime$ carbon connecting the pent saccharides and phosphate are removed. Molecular dynamics simulations using the reactive force field are carried out for 10 cases for the telomeric DNA consisting of 16 base pairs (32 nucleotides). It results in double-strand breaks (DSBs) being observed for structures with more than 24 scars. For 16 scar cases, only single-strand breaks (SSB) are observed. Moreover, in the case of $\left\{16, 0 \right\}$ and $\left\{ 0, 16 \right\},$ where only one of the strands had scars, SSB occurs only in the scarred strand. Secondly, in the $\left\{16, 8 \right\}$ and $\left\{ 8, 16 \right\}$ cases, DSBs occurs. Therefore, we conclude that the following conditions are necessary for DSBs:(i) Scars must occur on both the L and R strands. (ii) A large number of scars (24 or more) must occur in close proximity to each other.
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Submitted 8 July, 2024;
originally announced July 2024.
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Molecular dynamics simulation for coalescence of vacancies in tungsten crystal
Authors:
Sotaro Tsuru,
Hiroaki Nakamura,
Yuki Goto,
Miyuki Yajima,
Seiki Saito,
Shunsuke Usami
Abstract:
We performed molecular dynamics simulations of coalescence of two vacancies in a tungsten (W) crystal to elucidate the effect of temperature and hydrogen atoms. Simulations were performed for two types of vacancy structures, $\mathrm{V}_9 + \mathrm{W}_1 + \mathrm{V}_9$ and $\mathrm{V}_{10} + \mathrm{W}_4 + \mathrm{V}_{10}$ ($\mathrm{V}_{n}$ means that a vacancy corresponds to the absence of $n$ W…
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We performed molecular dynamics simulations of coalescence of two vacancies in a tungsten (W) crystal to elucidate the effect of temperature and hydrogen atoms. Simulations were performed for two types of vacancy structures, $\mathrm{V}_9 + \mathrm{W}_1 + \mathrm{V}_9$ and $\mathrm{V}_{10} + \mathrm{W}_4 + \mathrm{V}_{10}$ ($\mathrm{V}_{n}$ means that a vacancy corresponds to the absence of $n$ W atoms, and $\mathrm{W}_{m}$ indicates that there are $m$ W atoms between two vacancies) in various cases of temperature and hydrogen atom concentration. Under the vacancy structure $\mathrm{V}_9 + \mathrm{W}_1 + \mathrm{V}_9$, we observed vacancy coalescence for all the cases of the temperature and the number of hydrogen atoms. Evaluating the potential energy required for removing one of the W atoms between two vacancies, we found that high temperature and existing hydrogen atoms in the vacancies facilitate vacancy coalescence, and that under the structure $\mathrm{V}_{10} + \mathrm{W}_4 + \mathrm{V}_{10}$, hydrogen atoms facilitate vacancy coalescence most strongly when the number is around 45 to 54 in each vacancy.
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Submitted 2 July, 2024;
originally announced July 2024.
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Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
Authors:
Takashi Nakano,
Yosuke Harashima,
Kenta Chokawa,
Kenji Shiraishi,
Atsushi Oshiyama,
Yoshihiro Kangawa,
Shigeyoshi Usami,
Norihito Mayama,
Kazuya Toda,
Atsushi Tanaka,
Yoshio Honda,
Hiroshi Amano
Abstract:
Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in…
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Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in the energy gap induced by the dislocations are elevated towards the conduction band as the Mg impurity approaches the dislocation line, indicating that the Mg-TSD complex is a donor. The formation of the Mg-TSD complex is unequivocally evidenced by our atom probe tomography in which Mg condensation and diffusion through [0001] screw dislocations is observed in p-n diodes. These findings provide a novel picture that the Mg being a p-type impurity in GaN diffuses toward the TSD and then locally forms an n-type region. The appearance of this region along the TSD results the reverse leakage current.
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Submitted 15 April, 2020;
originally announced April 2020.
