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First Principal Investigations to Explore the Half-metallicity, Structural, Mechanical, and Optoelectronic Properties of Sodium-Based Fluoroperovskites NaYF3 (Y = Sc and Ti) for Applications in Spintronics and Optoelectronics
Authors:
Saeed Ullah,
Uzma Gul,
Saad Tariq,
Riaz Ullah,
Nasir Rahman,
Essam A. Ali,
Mudasser Husain,
Munawar Abbas,
Hafeez Ullah
Abstract:
A theoretical investigation was conducted on Na-based fluoro-perovskites NaYF3 (Y = Sc, Ti) to examine their structural, optical, electronic, and mechanical characteristics for the first time. These cubic compounds exhibit structural stability, maintaining perovskite structures with lattice spacing ranging from 4.15 to 4.26 Å. Computation of elastic parameters confirms their stability, ionic bondi…
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A theoretical investigation was conducted on Na-based fluoro-perovskites NaYF3 (Y = Sc, Ti) to examine their structural, optical, electronic, and mechanical characteristics for the first time. These cubic compounds exhibit structural stability, maintaining perovskite structures with lattice spacing ranging from 4.15 to 4.26 Å. Computation of elastic parameters confirms their stability, ionic bonding, ductility, and anisotropy. Computed band profiles reveal the half-metallic nature with indirect (M-Γ) bandgaps for the spin-down configurations. Furthermore, density-of-states analysis highlights the role of Y (Sc, Ti) atoms in the metallic character and conduction band contribution. The lack of absorbance in the visible region highlights the materials' suitability for optoelectronic devices. This investigation aims to provide comprehensive insights and encourage further experimental research.
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Submitted 4 December, 2023;
originally announced December 2023.
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Electrically-programmable frequency comb for compact quantum photonic circuits
Authors:
Shakir Ullah,
Mehmet Emre Tasgin,
Rasim Volga Ovali,
Mehmet Günay
Abstract:
Recent efforts have demonstrated the first prototypes of compact and programmable photonic quantum computers~(PQCs). Utilization of time-bin encoding in loop-like architectures enabled a programmable generation of quantum states and execution of different~(programmable) logic gates on a single circuit. Actually, there is still space for better compactness and complexity of available quantum states…
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Recent efforts have demonstrated the first prototypes of compact and programmable photonic quantum computers~(PQCs). Utilization of time-bin encoding in loop-like architectures enabled a programmable generation of quantum states and execution of different~(programmable) logic gates on a single circuit. Actually, there is still space for better compactness and complexity of available quantum states: photonic circuits~(PCs) can function at different frequencies. This necessitates an optical component, which can make different frequencies talk with each other. This component should be integrable into PCs and be controlled -- preferably -- by voltage for programmable generation of multifrequency quantum states and PQCs. Here, we propose a device that controls a four-wave mixing process, essential for frequency combs. We utilize nonlinear Fano resonances. Entanglement generated by the device can be tuned continuously by the applied voltage which can be delivered to the device via nm-thick wires. The device is integrable, CMOS-compatible, and operates within a timescale of hundreds of femtoseconds.
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Submitted 1 August, 2023;
originally announced August 2023.
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Environmental-induced work extraction
Authors:
Rasim Volga Ovali,
Shakir Ullah,
Mehmet Günay,
Mehmet Emre Tasgin
Abstract:
A measurement can extract work from an entangled, e.g., two-mode system. Here, we inquire the extracted work when no intellectual creature, like an ancilla/daemon, is present. When the monitoring is carried out by the environmental modes, that is when no measurement-apparatus is present, the measurement-basis becomes the coherent state. This implies a Gaussian measurement with a fixed strength…
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A measurement can extract work from an entangled, e.g., two-mode system. Here, we inquire the extracted work when no intellectual creature, like an ancilla/daemon, is present. When the monitoring is carried out by the environmental modes, that is when no measurement-apparatus is present, the measurement-basis becomes the coherent state. This implies a Gaussian measurement with a fixed strength $λ=1$. For two-mode Gaussian states, extracted work is already independent from the measurement outcome. After the strength is also fixed, this makes nature assign a particular amount of work to a given entanglement degree. Extracted work becomes the entanglement-degree times the entire thermal energy at low temperatures -- e.g., room temperature for optical modes. Environment, nature itself, converts entanglement to an ordered, macroscopic, directional~(kinetic) energy from a disordered, microscopic, randomized thermal energy. And the converted amount is solely determined by the entanglement.
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Submitted 2 January, 2023;
originally announced January 2023.
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Unveiling the multi-level structure of midgap states in Sb-doped MoX$_2$ (X = S, Se, Te) monolayers
Authors:
Marcos G. Menezes,
Saif Ullah
Abstract:
In this study, we use DFT calculations to investigate the electronic and structural properties of MoX$_2$ (X = S, Se, Te) monolayers doped with substitutional Sb atoms, with a central focus on the Sb(Mo) substitution. In MoS$_2$, we observe that this substitution is energetically favored under S rich conditions, where the S$_2$ gaseous phase is likely to be present. This result is compatible with…
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In this study, we use DFT calculations to investigate the electronic and structural properties of MoX$_2$ (X = S, Se, Te) monolayers doped with substitutional Sb atoms, with a central focus on the Sb(Mo) substitution. In MoS$_2$, we observe that this substitution is energetically favored under S rich conditions, where the S$_2$ gaseous phase is likely to be present. This result is compatible with a recent experimental observation in Sb-doped MoS$_2$ nanosheets grown by CVD. A similar behavior is found in MoSe$_2$, but in MoTe$_2$ the Sb(Mo) substitution is less likely to occur due to the possible absence of gaseous Te phases in experimental setups. In all cases, several impurity-induced states are found inside the band gap, with energies that span the entire gap. The Fermi energy is pinned a few tenths of eV above the top of the valence band, suggesting a predominant $p$-type behavior. The orbital nature of these states is investigated with projected and local density of states calculations, which reveal similarities to defect states induced by single Mo vacancies as well as their rehybridization with the $5s$ orbital from Sb. Additionally, we find that the band gap of the doped systems is increased in comparison with the pristine materials, in contrast with a previous calculation in Sb-doped MoS$_2$ that predicts a gap reduction with a different assignment of valence band and impurity levels. We discuss the similarities, discrepancies, and the limitations of both calculations. We also speculate possible reasons for the experimentally observed redshifts of the A and B excitons in the presence of the Sb dopants in MoS$_2$. We hope that these results spark future investigations on other aspects of the problem, particularly those concerning the effects of disorder and electron-hole interaction, and continue to reveal the potential of doped TMDCs for applications in optoelectronic devices.
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Submitted 30 September, 2021;
originally announced October 2021.
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Electronic properties of substitutional impurities in graphene-like C$_2$N, $tg$-C$_3$N$_4$, and $hg$-C$_3$N$_4$
Authors:
Saif Ullah,
Pablo A. Denis,
Marcos G. Menezes,
Fernando Sato,
Rodrigo B. Capaz
Abstract:
We study the electronic and structural properties of substitutional impurities of graphenelike nanoporous materials C$_2$N, $tg$-, and $hg$-C$_3$N$_4$ by means of density functional theory calculations. We consider four types of impurities; boron substitution on carbon sites (B(C)), carbon substitution on nitrogen sites (C(N)), nitrogen substitution on carbon sites (N(C)), and sulfur substitution…
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We study the electronic and structural properties of substitutional impurities of graphenelike nanoporous materials C$_2$N, $tg$-, and $hg$-C$_3$N$_4$ by means of density functional theory calculations. We consider four types of impurities; boron substitution on carbon sites (B(C)), carbon substitution on nitrogen sites (C(N)), nitrogen substitution on carbon sites (N(C)), and sulfur substitution on nitrogen sites (S(N)). From cohesive energy calculations, we find that the C(N) and B(C) substitutions are the most energetically favorable and induce small bond modifications in the vicinity of the impurity, while the S(N) induces strong lattice distortions. Though all of the studied impurities induce defect levels inside the band gap of these materials, their electronic properties are poles apart depending on the behavior of the impurity as an acceptor or a donor. It is also observed that acceptor (donor) wavefunctions are composed only of $σ$ ($π$) orbitals from the impurity itself and/or neighboring sites. Consequently, acceptor wavefunctions are directed towards the pores and donor wavefunctions are more extended throughout the neighboring atoms, a property that could further be explored to modify the interaction between these materials and adsorbates. Moreover, impurity properties display a strong site sensitivity and ground state binding energies ranging from $0.03$ to $1.13$ eV, thus offering an interesting route for tuning the optical properties of these materials. Finally, spin-polarized calculations reveal that all impurity configurations have a magnetic ground state that rises from the spin splitting of the impurity levels. In a few configurations, more than one impurity level can be found inside the gap and two of them could potentially be explored as two-level systems for single-photon emission, following similar proposals recently made on defect complexes on TMDCs.
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Submitted 19 October, 2020;
originally announced October 2020.
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Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
Authors:
Zahir Muhammad,
Yuliang Li,
Sami Ullah,
Firoz Khan,
Saleh S Alarfaji,
Abdulaziz M. Alanazi,
Zhe Sun,
Thamraa Alshahrani,
Yue Zhang,
Weisheng Zhao
Abstract:
Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the electronic properties of Hf doped ZrSe2 single crystals using angle-resolved photoemission spectroscopy (ARPES) combined with first principles density function…
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Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the electronic properties of Hf doped ZrSe2 single crystals using angle-resolved photoemission spectroscopy (ARPES) combined with first principles density functional theory (DFT) calculations. It is observed that the valence band maxima of ZrSe2, located below the Fermi level, undergo a significant change with the introduction of Hf substitution. Hf can introduce extra charges into the conduction band, rather than making a mixed structure of HfSe2 and ZrSe2 band structure, which can cross the Fermi level. Compared to the semiconducting band structure of ZrSe2, we observed that the conduction band crosses the Fermi level at the high symmetry M point in Hf-doped ZrSe2. This suggests an increase of electron type carriers around the Fermi level, resulting in an extrinsic charge carrier density in the conduction band, which can form a metallic behaviour. It can be noticed that the Hf cations can create disorder in the form of excess atoms of Zr, which yields more carriers in the conduction band in the shape of smeared bands. The tails of the smeared band occupied the d-orbitals extended into the Fermi level and left the d band below. Similarly, the electrical resistance measurements further confirm the metallic-like character of Hf doped ZrSe2 compared to the semiconductor ZrSe2, indicating increased carriers. This metallic like behavior is suggested to be predisposed by the extrinsic electrons induced by the substitutional disorder. This study further demonstrates the possibility of band gap engineering through heavy metal doping in 2D materials.
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Submitted 25 January, 2024; v1 submitted 1 December, 2018;
originally announced December 2018.
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Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids
Authors:
F. C. D. Moraes,
S. Ullah,
M. G. A. Balanta,
F. Iikawa,
Y. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
B. N. Zvonkov,
F. G. G. Hernandez
Abstract:
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variat…
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Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variation in the effective magnetic field induced by the dynamical relaxation of the Mn spins. Two processes are observed during electron spin precession: a quasi-instantaneous alignment of the Mn spins with photo-excited holes, followed by a slow alignment of Mn spins with the external transverse magnetic field. The first process leads to an equilibrium state imprinted in the initial precession frequency, which depends on pump power, while the second process promotes a linear frequency increase, with acceleration depending on temperature and external magnetic field. This observation yields new information about exchange process dynamics and on the possibility of constructing spin memories, which can rapidly respond to light while retaining information for a longer period.
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Submitted 4 February, 2019; v1 submitted 14 November, 2018;
originally announced November 2018.
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Optically-detected long-lived spin coherence in multilayer systems: Double and triple quantum wells
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
In this contribution, we investigated the spin coherence of high-mobility dense two-dimensional electron gases confined in multilayer systems. The dynamics of optically-induced spin polarization was experimentally studied employing the time-resolved Kerr rotation and resonant spin amplification techniques. For both the double and triple quantum wells doped beyond the metal-insulator transition, wh…
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In this contribution, we investigated the spin coherence of high-mobility dense two-dimensional electron gases confined in multilayer systems. The dynamics of optically-induced spin polarization was experimentally studied employing the time-resolved Kerr rotation and resonant spin amplification techniques. For both the double and triple quantum wells doped beyond the metal-insulator transition, where the spin coherence is greatly suppressed, we found remarkably long spin lifetimes limited by the Dyakonov-Perel mechanism and spin hopping process between the donor sites as well as the spread of ensemble g-factor. The double quantum well structure yields a spin lifetime of 6.25 ns at T = 5 K while the triple quantum well shows a spin lifetime exceeding 25 ns at T = 8 K.
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Submitted 8 June, 2018;
originally announced June 2018.
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Characterization of ultra-low carbon steel: A preliminary approach to investigate the quality and standards of locally-available steel
Authors:
Sulaiman,
Falak Niaz,
Muhammad Riaz Khan,
Saeed Ullah,
Azim Khan,
Abdur Rahim,
Syed Sohail Ahmad Shah
Abstract:
In the present work, experimental study has been carried out to expose the thermal, mechanical, and microstructural properties of low carbon steel as well as to inspects the influence of etchant concentration and etching time on its microstructure. Ultra-low carbon steel, in the form of a sheet, was collected from the Mughal Steel Industry, Peshawar, Pakistan. The sample was chemically etched, usi…
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In the present work, experimental study has been carried out to expose the thermal, mechanical, and microstructural properties of low carbon steel as well as to inspects the influence of etchant concentration and etching time on its microstructure. Ultra-low carbon steel, in the form of a sheet, was collected from the Mughal Steel Industry, Peshawar, Pakistan. The sample was chemically etched, using Nital as an etchant, by two different methods: first, by changing the etching time while keeping the composition of etchant the same and second, by keeping the time constant while varying the etchant composition in a range of 5-14 %. The microstructure analysis revealed that ultra-fine grain can be obtained for the etchant composition of 8 % nitric acid in ethanol. Additionally, we noticed that the best etching time, for getting a clear morphology, was 90 s. The X-ray diffraction revealed mainly alpha-iron. Thermal analysis showed a minor weight loss followed by weight gain of 1.31 wt %. Contraction and expansion, observed on the TDA curve, suggested the transformation of BCC to FCC structure. Our results indicated that the specimen is highly ductile, malleable and soft.
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Submitted 25 May, 2018;
originally announced May 2018.
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Influence of P2O5 and SiO2 addition on the phase, microstructure, and electrical properties of KNbO3
Authors:
S. Ullah,
I. Ullah,
Y. Iqbal,
A. Manan,
S. Ali,
A. Khan
Abstract:
In this contribution, the effect of P2O5 and SiO2 addition on the phase, microstructure, and electrical properties of KNbO3 was studied. Sample powders with the general formula (1-x)KNbO3.xP2O5 (x = 0.03, 0.05) and (1-x)KNbO3.xSiO2 (x = 0.1) were prepared via mixed-oxide route. The thermal behavior of the mixed-milled powder was investigated by TG/DTA which revealed an overall weight loss of 33.4…
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In this contribution, the effect of P2O5 and SiO2 addition on the phase, microstructure, and electrical properties of KNbO3 was studied. Sample powders with the general formula (1-x)KNbO3.xP2O5 (x = 0.03, 0.05) and (1-x)KNbO3.xSiO2 (x = 0.1) were prepared via mixed-oxide route. The thermal behavior of the mixed-milled powder was investigated by TG/DTA which revealed an overall weight loss of 33.4 wt % in the temperature range of 30 < T < 1200 C and crystallization exotherm occurring at about 795 C. The present results indicated that P2O5 acted as a sintering aid and lowered the sintering temperature by about 30 C and promoted densification of KNbO3. Sample compositions at various stages of processing were characterized using X-ray diffraction. Samples sintered at T < 1020 C revealed mainly KNbO3 together with a couple of low-intensity K3NbO4 peaks as a secondary phase. The SEM images of (1-x)KNbO3.xSiO2 (x = 0.1) samples showed a slight increase in the average grain size from 3.76 um to 3.86 um with an increase in sintering temperature from 1000 C to 1020 C. Strong variations in dielectric constant and loss tangent were observed due to P2O5 and SiO2 addition as well as frequency of the applied AC signals.
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Submitted 19 July, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
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Tailoring multilayer quantum wells for spin devices
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with a rem…
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The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with a remarkably long dephasing time T2* > 13 ns for the structure doped beyond metal-insulator transition. Dyakonov-Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factors for the spin coherence time. In the metallic regime, we found that the electron-electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov-Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, Dyakonov-Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T2*. Our findings, namely, long-lived spin coherence persisting up to about room temperature, spin polarization decay time with and without a magnetic field, the spin-orbit field, single electron relaxation time, transport scattering time, and the electron-electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices.
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Submitted 13 January, 2018;
originally announced January 2018.
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Robustness of spin coherence of the exciton bound to neutral donor states in multilayer system
Authors:
S. Ullah,
F. C. D. Moraes,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane magnetic field the TRKR measurements show the robustness of carrier's spin polarization against temperature which can be easily traced in an extended range up to 250 K…
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We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane magnetic field the TRKR measurements show the robustness of carrier's spin polarization against temperature which can be easily traced in an extended range up to 250 K. By tuning the pump-probe wavelength to the exciton bound to a neutral donor transition, we observed a remarkably long-lasting spin coherence (with dephasing time T2* > 14 ns) limited by the spin hopping process and exchange interaction between the donor sites as well as the ensemble spread of g-factor. The temperature dependent spin dephasing time revealed a double linear dependence due to the different relaxation mechanisms active at respective temperature ranges. We observed that the increase of sample temperature from 5 K to 250 K, leads to a strong T2* reduction by almost 98%/97% for the excitation wavelengths of 823/821 nm. Furthermore, we noticed that the temperature increase not only causes the reduction of spin lifetime but can also lead to the variation of electron g-factor. Additionally, the spin dynamics was studied through the dependencies on the applied magnetic field and optical pump power.
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Submitted 17 May, 2018; v1 submitted 13 January, 2018;
originally announced January 2018.
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Coexisted Three-component Bosons and Two-component Weyl Bosons in TiS, ZrSe and HfTe
Authors:
J. X. Li,
Q. Xie,
S. Ullah,
R. H. Li,
H. Ma,
D. Z. Li,
Y. Y. Li,
Xing-Qiu Chen
Abstract:
In analogy to various fermions of electrons in topological semimetals, topological mechanical states with two type of bosons, Dirac and Weyl bosons, were reported in some macroscopic systems of kHz frequency and those with a type of doubly-Weyl phonons in atomic vibrational framework of THz frequency of solid crystals were recently predicted. However, to date no three-component bosons of phonon ha…
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In analogy to various fermions of electrons in topological semimetals, topological mechanical states with two type of bosons, Dirac and Weyl bosons, were reported in some macroscopic systems of kHz frequency and those with a type of doubly-Weyl phonons in atomic vibrational framework of THz frequency of solid crystals were recently predicted. However, to date no three-component bosons of phonon has been reported. Here, through first-principles calculations, we have reported that the phonon spectra of the WC-type TiS, ZrSe, and HfTe commonly host the unique triply degenerate nodal points (TDNPs) and single two-component Weyl points (WPs) in THz frequency. Quasiparticle excitations near TDNPs of phonons are three-component bosons, beyond the conventional and known classifications of Dirac, Weyl and doubly-Weyl phonons. {Moreover, we have found that both TiS and ZrSe have five pairs of type-I Weyl phonons and a pair of type-II Weyl phonons, whereas HfTe only has four pairs of type-I Weyl phonons. They carry non-zero topological charges. On the (10$\bar{1}$0) crystal surfaces, we observe topological protected surface arc states connecting two WPs with opposite charges, which host modes that propagate nearly in one direction on the surface.
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Submitted 22 November, 2017;
originally announced November 2017.
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Three-component bosons in TiS, ZrSe and HfTe
Authors:
Sami Ullah,
Jiangxu Li,
Ronghan Li,
Qing Xie,
Hui Ma,
Dianzhong Li,
Yiyi Li,
Xing-Qiu Chen
Abstract:
Topological semimetals with several types of three-dimensional (3D) fermion of electrons, such as Dirac fermions, Weyl fermions, Dirac nodal lines and triply degenerate nodal points have been theoretically predicted and then experimentally discovered in the electronic structures of a series of solid crystals. In analogy of various typical fermions, topological mechanical states with two type of bo…
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Topological semimetals with several types of three-dimensional (3D) fermion of electrons, such as Dirac fermions, Weyl fermions, Dirac nodal lines and triply degenerate nodal points have been theoretically predicted and then experimentally discovered in the electronic structures of a series of solid crystals. In analogy of various typical fermions, topological mechanical states with two type of bosons, Dirac and Weyl bosons, were also experimentally reported in some macroscopic systems of kHz frequency and with a type of doubly-Weyl phonons in atomic vibrational framework of THz frequency of solid crystal was also recently predicted. However, to date no triply degenerate nodal point of phonon beyond the conventional Dirac, Weyl and doubly-Weyl phonons has been reported. Here, through first-principles calculations, we have reported on the prediction that the WC-type TiS, ZrSe, and HfTe commonly host the unique triply degenerate nodal point of phonon in THz frequency due to the occurrence of the phonon band inversion between the doubly degenerate planar vibrational mode and the singlet vertical vibrational mode at the boundary A point of the bulk Brillouin zone. Quasiparticle excitations near this triply degenerate nodal point of phonons are three-component bosons, different from the known classifications. The underlying mechanism can be attributed to the leading role of the comparable atomic masses of constituent elements in compounds in competition with the interatomic interaction. Additionally, the electronic structures in their bulk crystals exhibit the coexisted triply degenerate nodal point and Weyl fermions. The novel coexistence of three-component bosons, three-component fermions and Weyl fermions in these materials thus suggest an enriched platform for studying the interplay between different types of fermions and bosons.
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Submitted 21 June, 2017;
originally announced June 2017.
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Topological nodal line states and a potential catalyst of hydrogen evolution in the TiSi family
Authors:
Jiangxu Li,
Hui Ma,
Shaobo Feng,
Sami Ullah,
Ronghan Li,
Junhua Dong,
Dianzhong Li,
Yiyi Li,
Xing-Qiu Chen
Abstract:
Topological nodal line (DNL) semimetals, formed by a closed loop of the inverted bands in the bulk, result in the nearly flat drumhead-like surface states with a high electronic density near the Fermi level. The high catalytic active sites associated with the high electronic densities, the good carrier mobility, and the proper thermodynamic stabilities with $ΔG_{H^*}$$\approx$0 are currently the p…
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Topological nodal line (DNL) semimetals, formed by a closed loop of the inverted bands in the bulk, result in the nearly flat drumhead-like surface states with a high electronic density near the Fermi level. The high catalytic active sites associated with the high electronic densities, the good carrier mobility, and the proper thermodynamic stabilities with $ΔG_{H^*}$$\approx$0 are currently the prerequisites to seek the alternative candidates to precious platinum for catalyzing electrochemical hydrogen (HER) production from water. Within this context, it is natural to consider whether or not the DNLs are a good candidate for the HER because its non-trivial surface states provide a robust platform to activate possibly chemical reactions. Here, through first-principles calculations we reported on a new DNL TiSi-type family with a closed Dirac nodal line consisting of the linear band crossings in the $k_y$ = 0 plane. The hydrogen adsorption on the (010) and (110) surfaces yields the $ΔG_{H^*}$ to be almost zero. The topological charge carries have been revealed to participate in this HER. The results are highlighting that TiSi not only is a promising catalyst for the HER but also paves a new routine to design topological quantum catalyst utilizing the topological DNL-induced surface bands as active sites, rather than edge sites-, vacancy-, dopant-, strain-, or heterostructure-created active sites.
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Submitted 24 April, 2017;
originally announced April 2017.
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Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral dono…
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We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power.
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Submitted 2 May, 2017; v1 submitted 21 March, 2017;
originally announced March 2017.
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Weyl Ferroelectric Semimetal
Authors:
Ronghan Li,
Yuanfeng Xu,
Jianggang He,
Sami Ullah,
Jiangxiu Li,
Jun-Ming Liu,
Dianzhong Li,
Cesare Franchini,
Hongming Weng,
Xing-Qiu Chen
Abstract:
The recent discoveries of ferroelectric metal and Weyl semimetal (WSM) have stimulated a natural question: whether these two exotic states of matter can coexist in a single material or not. These two discoveries ensure us that physically it is possible since both of them share the same necessary condition, the broken inversion symmetry. Here, by using first-principles calculations, we demonstrate…
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The recent discoveries of ferroelectric metal and Weyl semimetal (WSM) have stimulated a natural question: whether these two exotic states of matter can coexist in a single material or not. These two discoveries ensure us that physically it is possible since both of them share the same necessary condition, the broken inversion symmetry. Here, by using first-principles calculations, we demonstrate that the experimentally synthesized nonmagnetic HgPbO$_3$ represents a unique example of such hybrid "\emph{Weyl ferroelectric semimetal}". Its centrosymmetric $R\bar{3}c$ phase will undergo a ferroelectric phase transition to the ferroelectric $R3c$ structure. Both phases are metallic and the ferroelectric phase owns a spontaneous polarization of 33 $μ$C/cm$^2$. Most importantly, it also harbors six pairs of chiral Weyl nodes around the Fermi level to be an oxide WSM. The structural symmetry broken phase transition induces a topological phase transition. The coexistence of ferroelectricity and Weyl nodes in HgPbO$_3$ is an ideal platform for exploring multiphase interaction and mutual control. The Weyl nodes can be tuned by external pulse electric field, which is promising for potential applications of integrated topotronic and ferroelectric devices.
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Submitted 23 October, 2016;
originally announced October 2016.
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Macroscopic transport of a current-induced spin polarization
Authors:
S. Ullah,
G. J. Ferreira,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the spin polarization about a current-controlled spin-orbit magnetic field. Spatially-resolved imaging showed a large variation of the electron g-factor and the drift transport of coherent electron spins…
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Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the spin polarization about a current-controlled spin-orbit magnetic field. Spatially-resolved imaging showed a large variation of the electron g-factor and the drift transport of coherent electron spins over distances exceeding half-millimetre in a direction transverse to the electric field.
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Submitted 24 August, 2016;
originally announced August 2016.
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Macroscopic transverse drift of long current-induced spin coherence in two-dimensional electron gases
Authors:
F. G. G. Hernandez,
S. Ullah,
G. J. Ferreira,
N. M. Kawahala,
G. M. Gusev,
A. K. Bakarov
Abstract:
We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hal…
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We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hall bar device. We observed coherence times in the nanoseconds range transported beyond half-millimeter distances in a direction transverse to the applied electric field. The measured long spin transport length can be explained by two material properties: large mean free path for charge diffusion in clean systems and enhanced spin-orbit coefficients in the triple well.
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Submitted 14 July, 2016; v1 submitted 22 May, 2016;
originally announced May 2016.
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Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored…
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We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width and electron density (Dresselhaus linear and cubic constants) which allows us to attain long dephasing times in the nanoseconds range. The determination of the scales: transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices.
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Submitted 17 May, 2016; v1 submitted 15 December, 2015;
originally announced December 2015.
