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First Principal Investigations to Explore the Half-metallicity, Structural, Mechanical, and Optoelectronic Properties of Sodium-Based Fluoroperovskites NaYF3 (Y = Sc and Ti) for Applications in Spintronics and Optoelectronics
Authors:
Saeed Ullah,
Uzma Gul,
Saad Tariq,
Riaz Ullah,
Nasir Rahman,
Essam A. Ali,
Mudasser Husain,
Munawar Abbas,
Hafeez Ullah
Abstract:
A theoretical investigation was conducted on Na-based fluoro-perovskites NaYF3 (Y = Sc, Ti) to examine their structural, optical, electronic, and mechanical characteristics for the first time. These cubic compounds exhibit structural stability, maintaining perovskite structures with lattice spacing ranging from 4.15 to 4.26 Å. Computation of elastic parameters confirms their stability, ionic bondi…
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A theoretical investigation was conducted on Na-based fluoro-perovskites NaYF3 (Y = Sc, Ti) to examine their structural, optical, electronic, and mechanical characteristics for the first time. These cubic compounds exhibit structural stability, maintaining perovskite structures with lattice spacing ranging from 4.15 to 4.26 Å. Computation of elastic parameters confirms their stability, ionic bonding, ductility, and anisotropy. Computed band profiles reveal the half-metallic nature with indirect (M-Γ) bandgaps for the spin-down configurations. Furthermore, density-of-states analysis highlights the role of Y (Sc, Ti) atoms in the metallic character and conduction band contribution. The lack of absorbance in the visible region highlights the materials' suitability for optoelectronic devices. This investigation aims to provide comprehensive insights and encourage further experimental research.
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Submitted 4 December, 2023;
originally announced December 2023.
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Strain Modulated Electronic and Optical Properties of Laterally Stitched MoSi2N4/XSi2N4 (X=W, Ti) 2D Heterostructures
Authors:
Ghulam Hussain,
Mumtaz Manzoor,
Muhammad Waqas Iqbal,
Imran Muhammad,
Asadollah Bafekry,
Hamid Ullah,
Carmine Autieri
Abstract:
We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.…
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We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.35 eV, while the MoSi2N4/TiSi2N4-lateral heterostructure (MTLH) revealed metallic behavior. Moreover, the effect of biaxial strain on the electronic and optical properties of MWLH is studied, which indicated substantial modifications in their electronic and optical spectra. In particular, an indirect to direct bandgap semiconducting transition can be achieved in MWLH via compressive strain. Besides, the absorbance, transmittance and reflectance spectra can effectively be tuned by means of biaxial strain. Our findings provide insights into the strain engineering of electronic and optical features, which could pave the way for future nano- and optoelectronic applications.
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Submitted 20 June, 2022; v1 submitted 18 May, 2022;
originally announced May 2022.
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Exploring the Structural Stability, Electronic and Thermal Attributes of synthetic 2D Materials and their Heterostructures
Authors:
Ghulam Hussain,
Mazia Asghar,
Muhammad Waqas Iqbal,
Hamid Ullah,
Carmine Autieri
Abstract:
Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra…
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Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra. The XSi2N4 (X= Ti, Mo, W) monolayers, the TiSi2N4/MoSi2N4-LH, MoSi2N4/WSi2N4-LH, and MoSi2N4/WSi2N4-VH possess a semiconducting nature with an indirect band gap ranging from 0.30 to 2.60 eV. At room temperature, the Cv values are found to be between 100 and 416 J/K.mol for the monolayers and their heterostructures, suggesting the better ability to retain heat with respect to transition metal dichalcogenides. Our study unveils the excellent attributes of XSi2N4 2D monolayers and their heterostructures, proposing them as potential candidates in nanoelectronics and thermoelectric applications.
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Submitted 26 January, 2022;
originally announced January 2022.
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Highly ordered lead-free double perovskite halides by design
Authors:
Chang Won Ahn,
Jae Hun Jo,
Jong Chan Kim,
Hamid Ullah,
Sangkyun Ryu,
Younghun Hwang,
Jin San Choi,
Jongmin Lee,
Sanghan Lee,
Hyoungjeen Jeen,
Young-Han Shin,
Hu Young Jeong,
Ill Won Kim,
Tae Heon Kim
Abstract:
Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to no…
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Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices. Here, we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale. We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis. The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further. Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity.
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Submitted 29 June, 2020;
originally announced June 2020.
