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Broadband Fourier transform spectroscopy of quantum emitters photoluminescence with sub-nanosecond temporal resolution
Authors:
Issam Belgacem,
Pasquale Cilibrizzi,
Muhammad Junaid Arshad,
Daniel White,
Malte Kroj,
Christiaan Bekker,
Margherita Mazzera,
Brian D. Gerardot,
Angelo C. Frangeskou,
Gavin W. Morley,
Nguyen Tien Son,
Jawad Ul-Hassan,
Takeshi Ohshima,
Hiroshi Abe,
Lorenzo Vinco,
Dario Polli,
Giulio Cerullo,
Cristian Bonato
Abstract:
The spectral characterization of quantum emitter luminescence over broad wavelength ranges and fast timescales is important for applications ranging from biophysics to quantum technologies. Here we present the application of time-domain Fourier transform spectroscopy, based on a compact and stable birefringent interferometer coupled to low-dark-count superconducting single-photon detectors, to the…
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The spectral characterization of quantum emitter luminescence over broad wavelength ranges and fast timescales is important for applications ranging from biophysics to quantum technologies. Here we present the application of time-domain Fourier transform spectroscopy, based on a compact and stable birefringent interferometer coupled to low-dark-count superconducting single-photon detectors, to the study of quantum emitters. We experimentally demonstrate that the system enables spectroscopy of quantum emitters over a broad wavelength interval from the near-infrared to the telecom range, where grating-based spectrometers coupled to InGaAs cameras are typically noisy and inefficient. We further show that the high temporal resolution of single-photon detectors, which can be on the order of tens of picoseconds, enables the monitoring of spin-dependent spectral changes on sub-nanosecond timescales.
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Submitted 21 April, 2025;
originally announced April 2025.
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Minute-long quantum coherence enabled by electrical depletion of magnetic noise
Authors:
Cyrus Zeledon,
Benjamin Pingault,
Jonathan C. Marcks,
Mykyta Onizhuk,
Yeghishe Tsaturyan,
Yu-xin Wang,
Benjamin S. Soloway,
Hiroshi Abe,
Misagh Ghezellou,
Jawad Ul-Hassan,
Takeshi Ohshima,
Nguyen T. Son,
F. Joseph Heremans,
Giulia Galli,
Christopher P. Anderson,
David D. Awschalom
Abstract:
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically purified silicon carbide (SiC) p-i-n diode, the depletion of not only electrical noise sources but also magnetic noise sources, resulting in record coherences for…
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Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically purified silicon carbide (SiC) p-i-n diode, the depletion of not only electrical noise sources but also magnetic noise sources, resulting in record coherences for SiC electron spin qubits. We also uncover complementary improvements to the relaxation times of nuclear spin registers controllable by the defect, and measure diode-enhanced coherences. These improvements lead to record-long nuclear spin Hahn-echo times on the scale of minutes. These results demonstrate the power of materials control and electronic device integration to create highly coherent solid-state quantum network nodes and processors.
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Submitted 17 April, 2025;
originally announced April 2025.
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Effective uniaxial dielectric function tensor and optical phonons in ($\bar{2}01$)-plane oriented $β$-Ga$_2$O$_3$ films with equally-distributed six-fold rotation domains
Authors:
Alyssa Mock,
Steffen Richter,
Alexis Papamichail,
Vallery Stanishev,
Misagh Ghezellou,
Jawad Ul-Hassan,
Andreas Popp,
Saud Bin Anooz,
Daniella Gogova,
Praneeth Ranga,
Sriram Krishnamoorthy,
Rafal Korlacki,
Mathias Schubert,
Vanya Darakchieva
Abstract:
Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-inf…
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Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-infrared ellipsometry data from undoped and electrically insulating films with an effective uniaxial dielectric tensor based on projections of all phonon modes within the rotation domains parallel and perpendicular to the sample normal, i.e., to the reciprocal lattice vector $\mathbf{g}_{\bar{2}01}$. Two effective response functions are described by model, and found sufficient to calculate ellipsometry data that best-match measured ellipsometry data from a representative film. We propose to render either effective dielectric functions, or inverse effective dielectric functions, each separately for electric field directions parallel and perpendicular to $\mathbf{g}_{\bar{2}01}$, by sums of Lorentz oscillators, which permit to determine either sets of transverse optical phonon mode parameters, or sets of longitudinal optical phonon mode parameters, respectively. Transverse optical modes common to both dielectric functions can be traced back to single crystal modes with $B_{\mathrm{u}}$ character, while modes with $A_{\mathrm{u}}$ character only appear within the dielectric function for polarization perpendicular to the sample surface. The thereby obtained parameter sets reveal all phonon modes anticipated from averaging over the six-fold rotation domains of single crystal $β$-Ga$_2$O$_3$, but with slightly shifted transverse optical, and completely different longitudinal optical phonon modes.
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Submitted 10 April, 2024;
originally announced April 2024.
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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
Authors:
Pasquale Cilibrizzi,
Muhammad Junaid Arshad,
Benedikt Tissot,
Nguyen Tien Son,
Ivan G. Ivanov,
Thomas Astner,
Philipp Koller,
Misagh Ghezellou,
Jawad Ul-Hassan,
Daniel White,
Christiaan Bekker,
Guido Burkard,
Michael Trupke,
Cristian Bonato
Abstract:
Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitte…
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Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.
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Submitted 24 November, 2023; v1 submitted 2 May, 2023;
originally announced May 2023.
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Characterization of single shallow silicon-vacancy centers in 4H-SiC
Authors:
Harpreet Singh,
Mario Alex Hollberg,
Misagh Ghezellou,
Jawad Ul-Hassan,
Florian Kaiser,
Dieter Suter
Abstract:
Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin polarization, affecting the optically detected magnetic resonance (ODMR) signal. This makes it essential to characterize these centers. Here we present the relevant spi…
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Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin polarization, affecting the optically detected magnetic resonance (ODMR) signal. This makes it essential to characterize these centers. Here we present the relevant spin properties of such centers. ODMR with a contrast of up to 6 %, which is better than the state of the art, allowed us to determine the zero field splitting, which is relevant for most sensing applications. We also present intensity-correlation data to verify that the signal originates from a single center and to extract transition rates between different electronic states.
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Submitted 6 April, 2023; v1 submitted 26 September, 2022;
originally announced September 2022.
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Broadband single-mode planar waveguides in monolithic 4H-SiC
Authors:
Tom Bosma,
Joop Hendriks,
Misagh Ghezellou,
Nguyen T. Son,
Jawad Ul-Hassan,
Caspar H. van der Wal
Abstract:
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavit…
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Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color-centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency (RF) control together with high-intensity optical control of defects in silicon carbide.
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Submitted 22 February, 2022;
originally announced February 2022.
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Five-second coherence of a single spin with single-shot readout in silicon carbide
Authors:
Christopher P. Anderson,
Elena O. Glen,
Cyrus Zeledon,
Alexandre Bourassa,
Yu Jin,
Yizhi Zhu,
Christian Vorwerk,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul-Hassan,
Takeshi Ohshima,
Nguyen T. Son,
Giulia Galli,
David D. Awschalom
Abstract:
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selec…
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An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selection, resulting in a high signal-to-noise ratio (SNR) that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.
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Submitted 5 October, 2021; v1 submitted 4 October, 2021;
originally announced October 2021.
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Entanglement and control of single quantum memories in isotopically engineered silicon carbide
Authors:
Alexandre Bourassa,
Christopher P. Anderson,
Kevin C. Miao,
Mykyta Onizhuk,
He Ma,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul-Hassan,
Takeshi Ohshima,
Nguyen T. Son,
Giulia Galli,
David D. Awschalom
Abstract:
Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nu…
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Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nuclear spins and present an ab initio method to predict the optimal isotopic fraction which maximizes the number of usable nuclear memories. We bolster these results by reporting high-fidelity electron spin control (F=99.984(1)%), alongside extended coherence times (T2=2.3 ms, T2DD>14.5 ms), and a >40 fold increase in dephasing time (T2*) from isotopic purification. Overall, this work underlines the importance of controlling the nuclear environment in solid-state systems and provides milestone demonstrations that link single photon emitters with nuclear memories in an industrially scalable material.
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Submitted 15 May, 2020;
originally announced May 2020.
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Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
Authors:
Péter Udvarhelyi,
Gergő Thiering,
Naoya Morioka,
Charles Babin,
Florian Kaiser,
Daniil Lukin,
Takeshi Ohshima,
Jawad Ul-Hassan,
Nguyen Tien Son,
Jelena Vučković,
Jörg Wrachtrup,
Adam Gali
Abstract:
Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the t…
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Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain polaronic gap around 5 and 22~meV for V1 and V2 centers, respectively, that results in significant difference in the temperature dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon-line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.
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Submitted 18 April, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
