Showing 1–4 of 4 results for author: Tu, C W

THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN

Authors: J. N. Heyman, E. M. Weiss, J. R. Rollag, K. M. Yu, O. D. Dubon, Y. J. Kuang, C. W. Tu, W. Walukiewicz

Abstract: THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bim… ▽ More THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy. △ Less

Submitted 10 May, 2018; originally announced May 2018.

Comments: 12 pages, 4 figures

Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor

Authors: J. N. Heyman, A. M. Schwartzberg, K. M. Yu, A. V. Luce, O. D. Dubon, Y. J. Kuang, C. W. Tu, W. Walukiewicz

Abstract: We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponen… ▽ More We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponentially with a time constant 23ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2 10^-8 cm-3/s. In our experiment an optical pump pulse excited electrons from the valance band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption was probed with a delayed white light pulse. We modeled the optical properties of our samples using the band anti-crossing model to extract carrier densities as a function of time. These results indicate that the minority carrier lifetimes are too short for efficient solar power conversion and that improvements in material quality will be required for practical applications of GaPAsN based intermediate band solar cells. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Comments: 15 pages, 7 figures

Journal ref: Phys. Rev. Applied 7, 014016 (2017)

Evidence for Macroscopic Quantum Tunneling of Phase Slips in Long One-Dimensional Superconducting Al Wires

Authors: Fabio Altomare, Albert M. Chang, Michael R. Melloch, Yuguang Hong, Charles W. Tu

Abstract: Quantum phase slips have received much attention due to their relevance to superfluids in reduced dimensions and to models of cosmic string production in the Early Universe. Their establishment in one-dimensional superconductors has remained controversial. Here we study the nonlinear voltage-current characteristics and linear resistance in long superconducting Al wires with lateral dimensions… ▽ More Quantum phase slips have received much attention due to their relevance to superfluids in reduced dimensions and to models of cosmic string production in the Early Universe. Their establishment in one-dimensional superconductors has remained controversial. Here we study the nonlinear voltage-current characteristics and linear resistance in long superconducting Al wires with lateral dimensions $\sim$ 5 nm. We find that, in a magnetic field and at temperatures well below the superconducting transition, the observed behaviors can be described by the non-classical, macroscopic quantum tunneling of phase slips, and are inconsistent with the thermal-activation of phase slips. △ Less

Submitted 26 March, 2007; v1 submitted 31 May, 2005; originally announced May 2005.

Comments: 4 pages, 4 figures, submitted to Phys. Rev. Lett. Manuscript, figure and EPAPS have been revised to streamline the presentation. Added erratum Fixed title in the erratum

Journal ref: Phys. Rev. Lett 97, 017001 (2006)

Ultra narrow AuPd and Al wires

Authors: Fabio Altomare, Albert M. Chang, Michael R. Melloch, Yuguang Hong, Charles W. Tu

Abstract: In this letter we discuss a novel and versatile template technique aimed to the fabrication of sub-10 nm wide wires. Using this technique, we have successfully measured AuPd wires, 12 nm wide and as long as 20 $μ$m. Even materials that form a strong superficial oxide, and thus not suited to be used in combination with other techniques, can be successfully employed. In particular we have measured… ▽ More In this letter we discuss a novel and versatile template technique aimed to the fabrication of sub-10 nm wide wires. Using this technique, we have successfully measured AuPd wires, 12 nm wide and as long as 20 $μ$m. Even materials that form a strong superficial oxide, and thus not suited to be used in combination with other techniques, can be successfully employed. In particular we have measured Al wires, with lateral width smaller or comparable to 10 nm, and length exceeding 10 $μ$m. △ Less

Submitted 2 March, 2007; v1 submitted 8 December, 2004; originally announced December 2004.

Comments: 4 pages, 4 figures. Pubblished in APL 86, 172501 (2005). Added erratum and revised Fig.4