Imaging the indirect-to-direct band-gap crossover in PbI2
Authors:
M. Rosmus,
A. Antezak,
A. Ptok,
F. Fortuna,
C. P. Sonny Tsotezem,
E. M. Staicu Casagrande,
A. Momeni,
A. Ouvrard,
C. Bigi,
M. Zonno,
A. Ouerghi,
H. Khemliche,
A. F. Santander-Syro,
E. Frantzeskakis
Abstract:
The nature of the band-gap in PbI2 (i.e. direct or indirect) is crucial for its applications. Here we directly image, using angle-resolved photoemission spectroscopy, its thickness-dependent crossover from an indirect to a direct band-gap. We experimentally probe a large shift of the valence band maximum towards the center of the Brillouin zone, when the thickness of PbI2 films is greater than a m…
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The nature of the band-gap in PbI2 (i.e. direct or indirect) is crucial for its applications. Here we directly image, using angle-resolved photoemission spectroscopy, its thickness-dependent crossover from an indirect to a direct band-gap. We experimentally probe a large shift of the valence band maximum towards the center of the Brillouin zone, when the thickness of PbI2 films is greater than a monolayer. Our experimental results, accompanied by density functional theory calculations, suggest that the band-gap crossover is driven by interlayer interactions and the hybridization of iodine pz orbitals. These findings demonstrate the tunable electronic properties of PbI2, highlighting its potential for applications in optoelectronics.
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Submitted 10 June, 2025;
originally announced June 2025.
Correlated Structural and Optical Characterization during Van der Waals Epitaxy of PbI2 on Graphene
Authors:
C. P. Sonny Tsotezem,
E. M. Staicu Casagrande,
A. Momeni,
A. Ouvrard,
A. Ouerghi,
M. Rosmus,
A. Antezak,
F. Fortuna,
A. F. Santander-Syro,
E. Frantzeskakis,
A. M. Lucero Manzano,
E. D. Cantero,
E. A. Sánchez,
H. Khemliche
Abstract:
Van der Waals heterostructures of 2D layered materials have gained much attention due to their flexible electronic properties, which make them promising candidates for energy, sensing, catalytic, and biomedical applications. Lead iodide (PbI2), a 2D layered semiconductor material belonging to the metal halide family, shows a thickness-dependent band gap with an indirect-to-direct transition above…
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Van der Waals heterostructures of 2D layered materials have gained much attention due to their flexible electronic properties, which make them promising candidates for energy, sensing, catalytic, and biomedical applications. Lead iodide (PbI2), a 2D layered semiconductor material belonging to the metal halide family, shows a thickness-dependent band gap with an indirect-to-direct transition above one monolayer. It has emerged as an excellent candidate for photodetectors and is a key component in metal halide perovskites solar cells. In the current work, we investigated the growth dynamics and the real-time correlation between structural and optical properties of PbI2 layers deposited on graphene/SiC(0001) by Molecular Beam Epitaxy. The structural and optical properties are probed respectively by Grazing Incidence Fast Atom Diffraction and Surface Differential Reflectance Spectroscopy. The growth proceeds layer-by-layer in a van der Waals-like epitaxy, with the zigzag direction of PbI2 parallel to the armchair direction of graphene. Both techniques bring evidence of significant modifications of the structural, electronic, and optical properties of the first PbI2 monolayer, characterized by a 1% tensile strain that relaxes over 3 to 5 monolayers. For a single monolayer, Angle-Resolved Photoemission Spectroscopy reveals a charge transfer from graphene to PbI2, demonstrated by an energy shift of the order of 50 meV in the graphene band structure.
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Submitted 6 June, 2025;
originally announced June 2025.
