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Interface traps in graphene field effect devices: extraction methods and influence on characteristics
Authors:
G. I. Zebrev,
E. V. Melnik,
A. A. Tselykovskiy
Abstract:
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage measurements are described and discussed. It has been found that the effects of electron-electron or hole-hole interactions and electron-hole puddles can be mixed in C…
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We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage measurements are described and discussed. It has been found that the effects of electron-electron or hole-hole interactions and electron-hole puddles can be mixed in C-V characteristics putting obstacles in the way of uniquely determined extraction of the interface trap density in graphene. Influence of the interface traps on DC and AC capacitance and conductance characteristics of graphene field-effect structures is described. It has been shown that variety of widths of resistivity peaks in various samples could be explained by different interface trap capacitance values.
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Submitted 22 May, 2014;
originally announced May 2014.
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Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors
Authors:
Gennady I. Zebrev,
Alexander A. Tselykovskiy,
Daria K. Batmanova,
Evgeny V. Melnik
Abstract:
The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance c…
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The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled taking into account the two modes of drain current saturation including drift velocity saturation or electrostatic pinch-off. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. The model allows describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain and cut-off frequency.
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Submitted 16 December, 2011;
originally announced December 2011.
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Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes
Authors:
Gennady I. Zebrev,
Alexander A. Tselykovskiy,
Valentin O. Turin
Abstract:
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.
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Submitted 2 February, 2012; v1 submitted 28 October, 2011;
originally announced October 2011.
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Influence of Interface Traps and Electron-Hole Puddles on Quantum Capacitance and Conductivity in Graphene Field-Effect Transistors
Authors:
G. I. Zebrev,
E. V. Melnik,
A. A. Tselykovskiy
Abstract:
We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on the small-signal capacitance and conductance characteristics of the gated graphene structures. Based on the self-consistent electrostatic consideration and taking into account the interface trap capacitance the explicit analytic expressions for charge carrier density and the quantum capacitance…
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We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on the small-signal capacitance and conductance characteristics of the gated graphene structures. Based on the self-consistent electrostatic consideration and taking into account the interface trap capacitance the explicit analytic expressions for charge carrier density and the quantum capacitance as functions of the gate voltage were obtained. This allows to extract the interface trap capacitance and density of interface states from the gate capacitance measurements. It has shown that self-consistent account of the interface trap capacitance enables to reconcile discrepancies in universal quantum capacitance vs the Fermi energy extracted for different samples. The electron-hole puddles and the interface traps impact on transfer I-V characteristics and conductivity has been investigated. It has been shown that variety of widths of resistivity peaks in various samples could be explained by different interface trap capacitance values.
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Submitted 28 June, 2011; v1 submitted 23 November, 2010;
originally announced November 2010.
