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Rotating atomic quantum gases with light-induced azimuthal gauge potentials and the observation of Hess-Fairbank effect
Authors:
P. -K. Chen,
L. -R. Liu,
M. -J. Tsai,
N. -C. Chiu,
Y. Kawaguchi,
S. -K. Yip,
M. -S. Chang,
Y. -J. Lin
Abstract:
We demonstrate synthetic azimuthal gauge potentials for Bose-Einstein condensates from engineering atom-light couplings. The gauge potential is created by adiabatically loading the condensate into the lowest energy Raman-dressed state, achieving a coreless vortex state. The azimuthal gauge potentials act as effective rotations and are tunable by the Raman coupling and detuning. We characterize the…
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We demonstrate synthetic azimuthal gauge potentials for Bose-Einstein condensates from engineering atom-light couplings. The gauge potential is created by adiabatically loading the condensate into the lowest energy Raman-dressed state, achieving a coreless vortex state. The azimuthal gauge potentials act as effective rotations and are tunable by the Raman coupling and detuning. We characterize the spin textures of the dressed states, in agreements with the theory. The lowest energy dressed state is stable with a 4.5-s half-atom-number-fraction lifetime. In addition, we exploit the azimuthal gauge potential to demonstrate the Hess-Fairbank effect, the analogue of Meissner effect in superconductors. The atoms in the absolute ground state has a zero quasi-angular momentum and transits into a polar-core vortex when the synthetic magnetic flux is tuned to exceed a critical value. Our demonstration serves as a paradigm to create topological excitations by tailoring atom-light interactions where both types of SO(3) vortices in the $|\langle \vec{F}\rangle|=1$ manifold, coreless vortices and polar-core vortices, are created in our experiment. The gauge field in the stationary Hamiltonian opens a path to investigating rotation properties of atomic superfluids under thermal equilibrium.
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Submitted 17 December, 2018; v1 submitted 2 August, 2018;
originally announced August 2018.
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Nitrogen-Functionalized Graphene Nanoflakes (GNFs:N): Tunable Photoluminescence and Electronic Structures
Authors:
J. W. Chiou,
Sekhar C. Ray,
S. I. Peng,
C. H. Chuang,
B. Y. Wang,
H. M. Tsai,
C. W. Pao,
H. -J. Lin,
Y. C. Shao,
Y. F. Wang,
S. C. Chen,
W. F. Pong,
Y. C. Yeh,
C. W. Chen,
L. -C. Chen,
K. -H. Chen,
M. -H. Tsai,
A. Kumar,
A. Ganguly,
P. Papakonstantinou,
H. Yamane,
N. Kosugi,
T. Regier,
L. Liu,
T. K. Sham
Abstract:
This study investigates the strong photoluminescence (PL) and X-ray excited optical luminescence observed in nitrogen-functionalized 2D graphene nanoflakes (GNFs:N), which arise from the significantly enhanced density of states in the region of π states and the gap between π and π* states. The increase in the number of the sp2 clusters in the form of pyridine-like N-C, graphite-N-like, and the C=O…
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This study investigates the strong photoluminescence (PL) and X-ray excited optical luminescence observed in nitrogen-functionalized 2D graphene nanoflakes (GNFs:N), which arise from the significantly enhanced density of states in the region of π states and the gap between π and π* states. The increase in the number of the sp2 clusters in the form of pyridine-like N-C, graphite-N-like, and the C=O bonding and the resonant energy transfer from the N and O atoms to the sp2 clusters were found to be responsible for the blue shift and the enhancement of the main PL emission feature. The enhanced PL is strongly related to the induced changes of the electronic structures and bonding properties, which were revealed by the X-ray absorption near-edge structure, X-ray emission spectroscopy, and resonance inelastic X-ray scattering. The study demonstrates that PL emission can be tailored through appropriate tuning of the nitrogen and oxygen contents in GNFs and pave the way for new optoelectronic devices.
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Submitted 4 August, 2012;
originally announced August 2012.
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The electronic and transport properties of a molecular junction studied by an integrated piecewise thermal equilibrium approach
Authors:
M. -H. Tsai,
T. -H. Lu,
Y. -H. Tang
Abstract:
An integrated piecewise thermal equilibrium approach based on the first-principles calculation method has been developed to calculate bias dependent electronic structures and current- and differential conductance-voltage characteristics of the gold-benzene-1,4-dithiol-gold molecular junction. The calculated currents and differential conductance have the same order of magnitude as experimental on…
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An integrated piecewise thermal equilibrium approach based on the first-principles calculation method has been developed to calculate bias dependent electronic structures and current- and differential conductance-voltage characteristics of the gold-benzene-1,4-dithiol-gold molecular junction. The calculated currents and differential conductance have the same order of magnitude as experimental ones. An electron transfer was found between the two electrodes when a bias is applied, which renders the two electrodes to have different local electronic structures. It was also found that when Au 5d electrons were treated as core electrons the calculated currents were overestimated, which can be understood as an underestimate of the Au-S covalent bonding and consequently the contact potential barrier and the replacement of delocalized Au 5d carriers by more itinerant delocalized Au 6sp carriers in the electrodes.
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Submitted 4 June, 2008; v1 submitted 30 May, 2008;
originally announced May 2008.
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Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles
Authors:
M. -H. Tsai,
Y. -H. Tang,
H. Chou,
W. T. Wu
Abstract:
The complicated electronic, magnetic, and colossal magnetoresistant (CMR) properties of Sr and Ca doped lanthanum manganites can be understood by spin-polarized first-principles calculations. The electronic properties can be attributed to a detailed balancing between Sr and Ca induced metal-like O 2p and majority-spin (majority-spin) Mn eg delocalized states and the insulator-like minority-spin…
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The complicated electronic, magnetic, and colossal magnetoresistant (CMR) properties of Sr and Ca doped lanthanum manganites can be understood by spin-polarized first-principles calculations. The electronic properties can be attributed to a detailed balancing between Sr and Ca induced metal-like O 2p and majority-spin (majority-spin) Mn eg delocalized states and the insulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level (EF). The magnetic properties can be attributed to a detailed balancing between O mediated antiferromagnetic superexchange and delocalized majority-spin Mn eg-state mediated ferromagnetic spin-spin couplings. While CMR can be attributed to the lining up of magnetic domains trigged by the applied magnetic field, which suppresses the trapping ability of the empty Mn t2g states that resists the motion of conducting Mn majority-spin eg electrons.
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Submitted 13 April, 2006;
originally announced April 2006.
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Self-regulated charge transfer and band tilt in nm-scale polar GaN films
Authors:
M. -H Tsai,
S. K. Dey
Abstract:
To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improvements in nitride materials and the performance of optoelectronic devices have been limited. The current first-principles calculation for the electronic structures of nm-scale [0001] GaN films show that the internal ele…
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To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improvements in nitride materials and the performance of optoelectronic devices have been limited. The current first-principles calculation for the electronic structures of nm-scale [0001] GaN films show that the internal electric fields and the band tilt of these films are in opposite direction to those predicted by PBFV. Additionally, it is determined that an intrinsic self-regulated charge transfer across the film limits the electrostatic potential difference across the film, which renders the local conduction band energy minimum (at the Ga-terminated surface) approximately equal to the local valence band energy maximum (at the N-terminated surface). This effect is found to occur in films thicker than ~4nm.
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Submitted 13 April, 2006;
originally announced April 2006.
