Electronic structure and transport properties of La_0.7Ce_0.3MnO_3
Authors:
W. J. Chang,
J. Y. Tsai,
H. -T. Jeng,
J. -Y. Lin,
Kenneth Y. -J. Zhang,
H. L. Liu,
J. M. Lee,
J. M. Chen,
K. H. Wu,
T. M. Uen,
Y. S. Gou,
J. Y. Juang
Abstract:
X-ray absorption spectroscopy (XAS), optical reflectance spectroscopy, and the Hall effect measurements were used to investigate the electronic structure in La_0.7Ce_0.3MnO_3 thin films (LCeMO). The XAS results are consistent with those obtained from LDA+U calculations. In that the doping of Ce has shifted up the Fermi level and resulted in marked shrinkage of hole pockets originally existing in…
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X-ray absorption spectroscopy (XAS), optical reflectance spectroscopy, and the Hall effect measurements were used to investigate the electronic structure in La_0.7Ce_0.3MnO_3 thin films (LCeMO). The XAS results are consistent with those obtained from LDA+U calculations. In that the doping of Ce has shifted up the Fermi level and resulted in marked shrinkage of hole pockets originally existing in La_0.7Ca_0.3MnO_3 (LCaMO). The Hall measurements indicate that in LCeMO the carriers are still displaying the characteristics of holes as LDA+U calculations predict. Analyses of the optical reflectance spectra evidently disapprove the scenario that the present LCeMO might have been dominated by the La-deficient phases.
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Submitted 13 September, 2005;
originally announced September 2005.