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Real-space grid representation of momentum and kinetic energy operators for electronic structure calculations
Authors:
Domenico Ninno,
Giovanni Cantele,
Fabio Trani
Abstract:
We show that the central finite difference formula for the first and the second derivative of a function can be derived, in the context of quantum mechanics, as matrix elements of the momentum and kinetic energy operators using, as a basis set, the discrete coordinate eigenkets $\vert x_n\rangle$ defined on the uniform grid $x_n=na$. Simple closed form expressions of the matrix elements are obtain…
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We show that the central finite difference formula for the first and the second derivative of a function can be derived, in the context of quantum mechanics, as matrix elements of the momentum and kinetic energy operators using, as a basis set, the discrete coordinate eigenkets $\vert x_n\rangle$ defined on the uniform grid $x_n=na$. Simple closed form expressions of the matrix elements are obtained starting from integrals involving the canonical commutation rule. A detailed analysis of the convergence toward the continuum limit with respect to both the grid spacing and the approximation order is presented. It is shown that the convergence from below of the eigenvalues in electronic structure calculations is an intrinsic feature of the finite difference method.
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Submitted 18 November, 2017; v1 submitted 11 November, 2017;
originally announced November 2017.
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High critical temperature nodal superconductors as building block for time-reversal invariant topological superconductivity
Authors:
Fabio Trani,
Gabriele Campagnano,
Arturo Tagliacozzo,
Procolo Lucignano
Abstract:
We study possible applications of high critical temperature nodal superconductors for the search for Majorana bound states in the DIII class. We propose a microscopic analysis of the proximity effect induced by d-wave superconductors on a semiconductor wire with strong spin-orbit coupling. We characterize the induced superconductivity on the wire employing a numerical self-consistent tight-binding…
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We study possible applications of high critical temperature nodal superconductors for the search for Majorana bound states in the DIII class. We propose a microscopic analysis of the proximity effect induced by d-wave superconductors on a semiconductor wire with strong spin-orbit coupling. We characterize the induced superconductivity on the wire employing a numerical self-consistent tight-binding Bogoliubov-de Gennes approach, and analytical considerations on the Green's function. The order parameter induced on the wire, the pair correlation function, and the renormalization of the Fermi points are analyzed in detail, as well as the topological phase diagram in the case of weak coupling. We highlight optimal Hamiltonian parameters to access the nontrivial topological phase which could display time-reversal invariant Majorana doublets at the boundaries of the wire.
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Submitted 20 November, 2016;
originally announced November 2016.
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Effects of polarization on the band-structure of delafossite transparent conductive oxides
Authors:
Julien Vidal,
Fabio Trani,
Fabien Bruneval,
Miguel A. L. Marques,
Silvana Botti
Abstract:
We use hybrid functionals and restricted self-consistent GW, state-of-the-art theoretical approaches for quasiparticle band structures, to study the electronic states of delafossite Cu(Al,In)O$_2$, the first p-type and bipolar transparent conductive oxides. We show that self-consistent GW gives remarkably wider band gaps than all the other approaches used so far. Accounting for polaronic effects i…
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We use hybrid functionals and restricted self-consistent GW, state-of-the-art theoretical approaches for quasiparticle band structures, to study the electronic states of delafossite Cu(Al,In)O$_2$, the first p-type and bipolar transparent conductive oxides. We show that self-consistent GW gives remarkably wider band gaps than all the other approaches used so far. Accounting for polaronic effects in the GW scheme we recover a very nice agreement with experiments. Furthermore, the modifications with respect to the Kohn-Sham bands are strongly k-dependent, which makes questionable the common practice of using a scissor operator. Finally, our results support the view that the low energy structures found in optical experiments, and initially attributed to an indirect transition, are due to intrinsic defects in the samples.
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Submitted 29 July, 2010; v1 submitted 3 December, 2009;
originally announced December 2009.
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Density functional study of oxygen vacancies at the SnO2 surface and subsurface sites
Authors:
F. Trani,
M. Causa',
D. Ninno,
G. Cantele,
V. Barone
Abstract:
Oxygen vacancies at the SnO2(110) and (101) surface and subsurface sites have been studied in the framework of density functional theory by using both all-electron Gaussian and pseudopotential plane-wave methods. The all-electron calculations have been performed using the B3LYP exchange-correlation functional with accurate estimations of energy gaps and density of states. We show that bulk oxyge…
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Oxygen vacancies at the SnO2(110) and (101) surface and subsurface sites have been studied in the framework of density functional theory by using both all-electron Gaussian and pseudopotential plane-wave methods. The all-electron calculations have been performed using the B3LYP exchange-correlation functional with accurate estimations of energy gaps and density of states. We show that bulk oxygen vacancies are responsible for the appearance of a fully occupied flat energy level lying at about 1 eV above the top valence band, and an empty level resonant with the conduction band. Surface oxygen vacancies strongly modify the surface band structures with the appearance of intragap states covering most of the forbidden energy window, or only a small part of it, depending on the vacancy depth from the surface. Oxygen vacancies can account for electron affinity variations with respect to the stoichiometric surfaces as well. A significant support to the present results is found by comparing them to the available experimental data.
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Submitted 6 June, 2008; v1 submitted 22 April, 2008;
originally announced April 2008.
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Screening in semiconductor nanocrystals: \textit{Ab initio} results and Thomas-Fermi theory
Authors:
F. Trani,
D. Ninno,
G. Cantele,
G. Iadonisi,
K. Hameeuw,
E. Degoli,
S. Ossicini
Abstract:
A first-principles calculation of the impurity screening in Si and Ge nanocrystals is presented. We show that isocoric screening gives results in agreement with both the linear response and the point-charge approximations. Based on the present ab initio results, and by comparison with previous calculations, we propose a physical real-space interpretation of the several contributions to the scree…
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A first-principles calculation of the impurity screening in Si and Ge nanocrystals is presented. We show that isocoric screening gives results in agreement with both the linear response and the point-charge approximations. Based on the present ab initio results, and by comparison with previous calculations, we propose a physical real-space interpretation of the several contributions to the screening. Combining the Thomas-Fermi theory and simple electrostatics, we show that it is possible to construct a model screening function that has the merit of being of simple physical interpretation. The main point upon which the model is based is that, up to distances of the order of a bond length from the perturbation, the charge response does not depend on the nanocrystal size. We show in a very clear way that the link between the screening at the nanoscale and in the bulk is given by the surface polarization. A detailed discussion is devoted to the importance of local field effects in the screening. Our first-principles calculations and the Thomas-Fermi theory clearly show that in Si and Ge nanocrystals, local field effects are dominated by surface polarization, which causes a reduction of the screening in going from the bulk down to the nanoscale. Finally, the model screening function is compared with recent state-of-the-art ab initio calculations and tested with impurity activation energies.
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Submitted 15 January, 2008;
originally announced January 2008.
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Ab initio calculations of electron affinity and ionization potential of carbon nanotubes
Authors:
F. Buonocore,
F. Trani,
D. Ninno,
A. Di Matteo,
G. Cantele,
G. Iadonisi
Abstract:
By combining ab initio all-electron localized orbital and pseudopotential plane-wave approaches we report on calculations of the electron affinity (EA) and the ionization potential (IP) of (5, 5) and (7, 0) single-wall carbon nanotubes. The role played by finite-size effects and nanotube termination has been analysed by comparing several hydrogen-passivated and not passivated nanotube segments.…
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By combining ab initio all-electron localized orbital and pseudopotential plane-wave approaches we report on calculations of the electron affinity (EA) and the ionization potential (IP) of (5, 5) and (7, 0) single-wall carbon nanotubes. The role played by finite-size effects and nanotube termination has been analysed by comparing several hydrogen-passivated and not passivated nanotube segments. The dependence of the EA and IP on both the quantum confinement effect, due to the nanotube finite length, and the charge accumulation on the edges, is studied in detail. Also, the EA and IP are compared to the energies of the lowest unoccupied and highest occupied states, respectively, upon increasing the nanotube length. We report a slow convergence with respect to the number of atoms. The effect of nanotube packing in arrays on the electronic properties is eventually elucidated as a function of the intertube distance.
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Submitted 13 January, 2008;
originally announced January 2008.
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Role of local fields in the optical properties of silicon nanocrystals using the tight binding approach
Authors:
F. Trani,
D. Ninno,
G. Iadonisi
Abstract:
The role of local fields in the optical response of silicon nanocrystals is analyzed using a tight binding approach. Our calculations show that, at variance with bulk silicon, local field effects dramatically modify the silicon nanocrystal optical response. An explanation is given in terms of surface electronic polarization and confirmed by the fair agreement between the tight binding results an…
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The role of local fields in the optical response of silicon nanocrystals is analyzed using a tight binding approach. Our calculations show that, at variance with bulk silicon, local field effects dramatically modify the silicon nanocrystal optical response. An explanation is given in terms of surface electronic polarization and confirmed by the fair agreement between the tight binding results and that of a classical dielectric model. From such a comparison, it emerges that the classical model works not only for large but also for very small nanocrystals. Moreover, the dependence on size of the optical response is discussed, in particular treating the limit of large size nanocrystals.
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Submitted 26 October, 2007;
originally announced October 2007.
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Engineering Silicon Nanocrystals: Theoretical study of the effect of Codoping with Boron and Phosphorus
Authors:
Federico Iori,
Elena Degoli,
Rita Magri,
Ivan Marri,
G. Cantele,
D. Ninno,
F. Trani,
O. Pulci,
Stefano Ossicini
Abstract:
We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with either one or two atomic species, a significant modification of both the absorption and the emission of light can be achieved. We have considered impurities,…
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We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with either one or two atomic species, a significant modification of both the absorption and the emission of light can be achieved. We have considered impurities, either boron or phosphorous (doping) or both (codoping), located at different substitutional sites of silicon nanocrystals with size ranging from 1.1 nm to 1.8 nm in diameter. We have found that the codoped nanocrystals have the lowest impurity formation energies when the two impurities occupy nearest neighbor sites near the surface. In addition, such systems present band-edge states localized on the impurities giving rise to a red-shift of the absorption thresholds with respect to that of undoped nanocrystals. Our detailed theoretical analysis shows that the creation of an electron-hole pair due to light absorption determines a geometry distortion that in turn results in a Stokes shift between adsorption and emission spectra. In order to give a deeper insight in this effect, in one case we have calculated the absorption and emission spectra going beyond the single-particle approach showing the important role played by many-body effects. The entire set of results we have collected in this work give a strong indication that with the doping it is possible to tune the optical properties of silicon nanocrystals.
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Submitted 26 July, 2007;
originally announced July 2007.
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Polarization anisotropy in the optical properties of silicon ellipsoids
Authors:
F. Trani
Abstract:
A new real space quantum mechanical approach with local field effects included is applied to the calculation of the optical properties of silicon nanocrystals. Silicon ellipsoids are studied and the role of surface polarization is discussed in details. In particular, surface polarization is shown to be responsible for a strong optical anisotropy in silicon ellipsoids, much more pronounced with r…
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A new real space quantum mechanical approach with local field effects included is applied to the calculation of the optical properties of silicon nanocrystals. Silicon ellipsoids are studied and the role of surface polarization is discussed in details. In particular, surface polarization is shown to be responsible for a strong optical anisotropy in silicon ellipsoids, much more pronounced with respect to the case in which only quantum confinement effects are considered. The static dielectric constant and the absorption spectra are calculated, showing that the perpendicular and parallel components have a very different dependence on the ellipsoid aspect ratio. Then, a comparison with the classical dielectric model is performed, showing that the model only works for large and regular structures, but it fails for thin elongated ellipsoids.
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Submitted 10 July, 2007;
originally announced July 2007.
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Tight binding formulation of the dielectric response in semiconductor nanocrystals
Authors:
F. Trani,
D. Ninno,
G. Iadonisi
Abstract:
We report on a theoretical derivation of the electronic dielectric response of semiconductor nanocrystals using a tight-binding framework. Extending to the nanoscale the Hanke and Sham approach [Phys. Rev. B 12, 4501 (1975)] developed for bulk semiconductors, we show how local field effects can be included in the study of confined systems. A great advantage of this scheme is that of being formul…
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We report on a theoretical derivation of the electronic dielectric response of semiconductor nanocrystals using a tight-binding framework. Extending to the nanoscale the Hanke and Sham approach [Phys. Rev. B 12, 4501 (1975)] developed for bulk semiconductors, we show how local field effects can be included in the study of confined systems. A great advantage of this scheme is that of being formulated in terms of localized orbitals and thus it requires very few computational resources and times. Applications to the optical and screening properties of semiconductor nanocrystals are presented here and discussed. Results concerning the absorption cross section, the static polarizability and the screening function of InAs (direct gap) and Si (indirect gap) nanocrystals compare well to both first principles results and experimental data. We also show that the present scheme allows us to easily go beyond the continuum dielectric model, based on the Clausius-Mossotti equation, which is frequently used to include the nanocrystal surface polarization. Our calculations indicate that the continuum dielectric model, used in conjunction with a size dependent dielectric constant, underestimates the nanocrystal polarizability, leading to exceedingly strong surface polarization fields.
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Submitted 17 August, 2007; v1 submitted 15 May, 2007;
originally announced May 2007.
