Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures
Authors:
Jan Tröger,
Reinhard Kersting,
Birgit Hagenhoff,
Dominique Bougeard,
Nikolay V. Abrosimov,
Jan Klos,
Lars R. Schreiber,
Hartmut Bracht
Abstract:
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced p…
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The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced profile broadening. As model system, a state-of-the-art Molecular Beam Epitaxy (MBE) grown multilayer homostructure consisting of $^{\textit{nat}}$Si/$^{28}$Si bilayers with only 2 nm in thickness is investigated while varying the most relevant sputter parameters. Atomic concentration-depth profiles are determined and an error function based description model is used to quantify layer thicknesses as well as profile broadening. The optimization process leads to an excellent resolution of the multilayer homostructure. The results of this optimization guide to a ToF-SIMS analysis of another MBE grown heterostructure consisting of a strained and highly purified $^{28}$Si layer sandwiched between two Si$_{0.7}$Ge$_{0.3}$ layers. The sandwiched $^{28}$Si layer represents a quantum well that has proven to be an excellent host for the implementation of electron-spin qubits.
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Submitted 25 July, 2024;
originally announced July 2024.
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Authors:
Jan Klos,
Jan Tröger,
Jens Keutgen,
Merritt P. Losert,
Helge Riemann,
Nikolay V. Abrosimov,
Joachim Knoch,
Hartmut Bracht,
Susan N. Coppersmith,
Mark Friesen,
Oana Cojocaru-Mirédin,
Lars R. Schreiber,
Dominique Bougeard
Abstract:
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing…
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Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.
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Submitted 30 May, 2024;
originally announced May 2024.
