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Phonon-polaritons in Zn(1-x)MgxTe (x<0.09): A Raman scattering study
Authors:
D. Singh,
A. Elmahjoubi,
O. Pages,
V. J. B. Torres,
C. Gardiennet,
G. Kervern,
A. Polian,
Y. Le Godec,
J. -P. Itie,
S. Diliberto,
S. Michel,
P. Franchetti,
K. Strzalkowski
Abstract:
Phonon-polaritons (PP) are phonon-photon coupled modes. Using near-forward Raman scattering, the PP of the cubic Zn(1-x)MgxTe (x<0.09) semiconductor alloy could be measured. While the PP-coupling hardly develops in pure ZnTe, minor Mg-alloying suffices to stabilize a long-lifetime PP strongly bound to the lattice, i.e., with a pronounced phonon character, and yet a fast one originating from the hi…
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Phonon-polaritons (PP) are phonon-photon coupled modes. Using near-forward Raman scattering, the PP of the cubic Zn(1-x)MgxTe (x<0.09) semiconductor alloy could be measured. While the PP-coupling hardly develops in pure ZnTe, minor Mg-alloying suffices to stabilize a long-lifetime PP strongly bound to the lattice, i.e., with a pronounced phonon character, and yet a fast one originating from the highly dispersive photon-like bottleneck of the PP-dispersion. By combining the advantages of a phonon and of a photon, the long-lifetime PP generated by minor Mg-alloying of ZnTe marks an improvement over the PP of pristine ZnTe, that, from the Raman cross section calculation, can only achieve a balanced compromise between the two kinds of advantages, intensity and speed. The discussion of the PP-related lattice dynamics of Zn(1-x)MgxTe (x<0.09) is grounded in a preliminary study of the lattice macro- and microstructure using X-ray diffraction and solid-state nuclear magnetic resonance, respectively, and further relies on ab initio calculations of the native phonon modes behind the PP in the Mg-dilute limit of Zn(1-x)MgxTe (x~0), considering various Mg-isotopes.
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Submitted 15 April, 2025;
originally announced April 2025.
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Hydrogen reactions with dopants and impurities in solar silicon from first principles
Authors:
José Coutinho,
Diana Gomes,
Vitor J. B. Torres,
Tarek O. Abdul Fattah,
Vladimir P. Markevich,
Anthony R. Peaker
Abstract:
We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight…
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We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight a comparative study of acceptor-enhanced dissociation of hydrogen molecules in B- and Ga-doped material, their subsequent reaction steps toward formation of acceptor-hydrogen pairs, the proposal of mechanisms which explain the observed kinetics of photo-/carrier-induced dissociation of PH and CH pairs in n-type Si, analysis of reactions involving direct interactions between molecules with P and C, and the assignment of several electron and hole traps with detailed atomistic- and wavefunction-resolved models.
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Submitted 1 February, 2024;
originally announced February 2024.
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Theory of reactions between hydrogen and group-III acceptors in silicon
Authors:
José Coutinho,
Diana Gomes,
Vitor J. B. Torres,
Tarek O. Abdul Fattah,
Vladimir P. Markevich,
Anthony R. Peaker
Abstract:
The thermodynamics of several reactions involving atomic and molecular hydrogen with group-III acceptors is investigated. The results provide a first-principles-level account of thermally- and carrier-activated processes involving these species. Acceptor-hydrogen pairing is revisited as well. We present a refined physicochemical picture of long-range migration, compensation effects, and short-rang…
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The thermodynamics of several reactions involving atomic and molecular hydrogen with group-III acceptors is investigated. The results provide a first-principles-level account of thermally- and carrier-activated processes involving these species. Acceptor-hydrogen pairing is revisited as well. We present a refined physicochemical picture of long-range migration, compensation effects, and short-range reactions, leading to fully passivated $\equiv\textrm{Si-H}\cdots X\equiv$ structures, where $X$ is a group-III acceptor element. The formation and dissociation of acceptor-H and acceptor-H$_{2}$ complexes is considered in the context of Light and elevated Temperature Induced Degradation (LeTID) of silicon-based solar cells. Besides explaining observed trends and answering several fundamental questions regarding the properties of acceptor-hydrogen pairing, we find that the BH$_{2}$ complex is a by-product along the reaction of H$_{2}$ molecules with boron toward the formation of BH pairs (along with subtraction of free holes). The calculated changes in Helmholtz free energies upon the considered defect reactions, as well as activation barriers for BH$_{2}$ formation/dissociation (close to $\sim1$ eV) are compatible with the experimentally determined activation energies of degradation/recovery rates of Si:B-based cells during LeTID. Dihydrogenated acceptors heavier than boron are anticipated to be effective-mass-like shallow donors, and therefore, unlikely to show similar non-radiative recombination activity.
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Submitted 28 July, 2023;
originally announced July 2023.
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Vibrational and mechanical properties of the highly mismatched (Cd,Be)Te semiconductor alloy : Experiment and ab initio calculations
Authors:
A. Elmahjoubi,
M. B. Shoker,
O. Pages,
V. J. B. Torres,
A. Polian,
A. V. Postnikov,
C. Bellin,
K. Beneut,
C. Gardiennet,
G. Kervern,
A. EnNaciri,
L. Broch,
R. Hajj Hussein,
J. -P. Itie,
L. Nataf,
S. Ravy,
P. Franchetti,
S. Diliberto,
S. Michel,
A. Abouais,
K. Strzalkowski
Abstract:
The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combini…
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The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combining Raman scattering with X ray diffraction at high pressure and ab initio calculations (x around 0, 0.5 and 1). The (macroscopic) bulk modulus B drops below the CdTe value on minor Be incorporation, at variance with a linear B versus x increase predicted ab initio, thus hinting at large anharmonic effects in the real crystal. Yet, no anomaly occurs at the microscopic (bond) scale as the regular bimodal PM Raman signal predicted ab initio for the BeTe bond in minority (x around 0 and 0.5) is (barely) detected experimentally. Although at large Be content (x around 1) the same bimodal signal relaxes down to inversion, an unprecedented case, specific pressure dependencies of the regular (x around 0 and 0.5) and inverted (x around 1) BeTe Raman doublets are in line with PM predictions. Hence, the PM applies as such to (Cd, Be)Te albeit in a relaxed form, without further refinement. This enhances the scheme validity as a generic descriptor of phonons in alloys.
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Submitted 3 March, 2023;
originally announced March 2023.
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Theory of shallow and deep boron defects in 4H-SiC
Authors:
Vitor J. B. Torres,
Ivana Capan,
José Coutinho
Abstract:
Abstract Despite advances toward improving the quality of $p$-type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related optical, junction, and paramagnetic resonance experiments available in the literature. A conspicuous puzzle is the observation of two shallow boron defects with rather distinct axial orientations as found by electron parama…
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Abstract Despite advances toward improving the quality of $p$-type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related optical, junction, and paramagnetic resonance experiments available in the literature. A conspicuous puzzle is the observation of two shallow boron defects with rather distinct axial orientations as found by electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) data. This feature is not observed in material doped with other group-III elements. Another open issue involves conflicting conclusions from photoluminescence and EPR studies of a deeper boron center, which has been linked to rather distinct models, either based on substitutional or vacancy-related boron defects. We unlock these and other problems by means of first-principles calculations, where the temperature-dependent stability, the electronic activity, and the paramagnetic response of boron defects in 4H-SiC are investigated.
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Submitted 5 January, 2023;
originally announced January 2023.
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Silicon carbide diodes for neutron detection
Authors:
José Coutinho,
Vitor J. B. Torres,
Ivana Capan,
Tomislav Brodar,
Zoran Ereš,
Robert Bernat,
Vladimir Radulović,
Klemen Ambrožič,
Luka Snoj,
Željko Pastuović,
Adam Sarbutt,
Takeshi Ohshima,
Yuichi Yamazaki,
Takahiro Makino
Abstract:
In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the stronger contenders, particularly those based on materials possessing a wide band…
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In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the stronger contenders, particularly those based on materials possessing a wide band gap like silicon carbide. We review the workings of SiC-based neutron detectors, along with several issues related to material properties, device fabrication and testing. The paper summarizes the experimental and theoretical work carried out within the E-SiCure project, co-funded by the NATO SPS Programme. Among the achievements, we have the development of successful Schottky barrier based detectors and the identification of the main carrier life-time-limiting defects in the SiC active areas, either already present in pristine devices or introduced upon exposure to radiation fields. The physical processes involved in neutron detection are described. Material properties as well as issues related to epitaxial growth and device fabrication are addressed. The presence of defects in as-grown material, as well as those introduced by ionizing radiation are reported. We finally describe several experiments carried out at the Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where a set of SiC-based neutron detectors were tested, some of which being equipped with a thermal neutron converter layer. We show that despite the existence of large room for improvement, Schottky barrier diodes based on state-of-the-art 4H-SiC are closing the gap regarding the sensitivity offered by gas-based and that of semiconductor detectors.
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Submitted 30 October, 2020; v1 submitted 30 September, 2020;
originally announced September 2020.
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Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
Authors:
M. B. Shoker,
O. Pagès,
V. J. B. Torres,
A. Polian,
J. -P. Itié,
G. K. Pradhan,
C. Narayana,
M. N. Rao,
R. Rao,
C. Gardiennet,
G. Kervern,
K. Strzałkowski,
F. Firszt
Abstract:
The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes…
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The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (ZnBeSe, ZnSeS) or it opens (ZnCdSe), depending on the hardening rates of the two environments under pressure. A partition of II-VI and III-V mixed crystals is accordingly outlined. Of special interest is the closure case, in which the system resonantly stabilizes ante transition at its exceptional point corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity.
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Submitted 17 August, 2020;
originally announced August 2020.
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Theory of the carbon vacancy in $4H$-SiC: crystal field and pseudo Jahn-Teller effects
Authors:
José Coutinho,
Vitor J. B. Torres,
Kamel Demmouche,
Sven Öberg
Abstract:
The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literature regarding the characterization and modeling of the defect, many fundamental questions persist. Among them we have the shaky connection of the EPR data to the electrical measurements, the physical origin of the pseudo-J…
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The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literature regarding the characterization and modeling of the defect, many fundamental questions persist. Among them we have the shaky connection of the EPR data to the electrical measurements, the physical origin of the pseudo-Jahn-Teller (pJT) effect, the reasoning for the observed sub-lattice dependence of the paramagnetic states, and the severe temperature-dependence of some hyperfine signals which cannot be accounted for by a thermally-activated dynamic averaging between equivalent JT-distorted structures. In this work we address these problems by means of semi-local and hybrid density functional calculations. We start by inventorying a total of four vacancy structures. Diamagnetic states have well defined low-energy structures, whereas paramagnetic states display metastability. This rich structural variety is traced back to the filling of electronic states which are shaped by a crystal-field-dependent pJT effect. From calculated minimum energy paths for defect rotation and transformation mechanisms, combined with the calculated formation energies and electrical levels, we arrived at a configuration-coordinate diagram of the defect. The diagram provides us with a detailed first-principles picture of the defect when subject to optical and thermal excitations. The calculated acceptor and donor transitions agree well with Z$_{1/2}$ and EH$_{6/7}$ trap energies, respectively. From comparison of calculated and measured $U$-values, and correlating the site-dependent formation energies with the relative intensity of the DLTS peaks in as-grown material, we assign Z$_{1}$ (EH$_{6}$) and Z$_{2}$ (EH$_{7}$) signals to acceptor (donor) transitions of carbon vacancies located on the $h$ and $k$ sub-lattice sites, respectively.
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Submitted 2 November, 2017; v1 submitted 20 October, 2017;
originally announced October 2017.
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A first-principles model of copper-boron interactions in Si: implications for the light-induced degradation of solar Si
Authors:
E. Wright,
J. Coutinho,
S. Öberg,
V. J. B. Torres
Abstract:
The recent discovery that Cu contamination of Si combined with light exposure has a significant detrimental impact on carrier life-time has drawn much concern within the solar-Si community. The effect, known as the copper-related light-induced degradation (Cu-LID) of Si solar cells, has been connected to the release of Cu interstitials within the bulk [Solar Energy Materials & Solar Cells, 147:115…
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The recent discovery that Cu contamination of Si combined with light exposure has a significant detrimental impact on carrier life-time has drawn much concern within the solar-Si community. The effect, known as the copper-related light-induced degradation (Cu-LID) of Si solar cells, has been connected to the release of Cu interstitials within the bulk [Solar Energy Materials & Solar Cells, 147:115-126, 2016]. In this paper, we describe a comprehensive analysis of the formation/dissociation process of the CuB pair in Si by means of first-principles modelling, as well as the interaction of CuB defects with photo-excited minority carriers. We confirm that the long-range interaction between the Cu cation and the B anion has a Coulomb-like behaviour, in line with the trapping-limited diffusivity of Cu observed by transient ion drift measurements. On the other hand, the short-range interaction between the d-electrons of Cu and the excess of negative charge on B produces a repulsive effect, thereby decreasing the binding energy of the pair when compared to the ideal point-charge Coulomb model. We also find that metastable CuB pairs produce acceptor states just below the conduction band minimum, which arise from the Cu level emptied by the B acceptor. Based on these results, we argue that photo-generated minority carriers trapped by the metastable pairs can switch off the Coulomb interaction that holds the pairs together, enhancing the release of Cu interstitials, and acting as a catalyst for Cu-LID.
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Submitted 9 November, 2016;
originally announced November 2016.
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Mössbauer parameters of Fe-related defects in group-IV semiconductors: first principles calculations
Authors:
E. Wright,
J. Coutinho,
V. J. B. Torres,
S. Öberg
Abstract:
We employ a combination of pseudopotential and all-electron density functional calculations, to relate the structure of defects in supercells to the isomer shifts and quadrupole splittings observed in Mössbauer spectroscopy experiments. The methodology is comprehensively reviewed and applied to the technologically relevant case of iron-related defects in silicon, and to other group-IV hosts to a l…
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We employ a combination of pseudopotential and all-electron density functional calculations, to relate the structure of defects in supercells to the isomer shifts and quadrupole splittings observed in Mössbauer spectroscopy experiments. The methodology is comprehensively reviewed and applied to the technologically relevant case of iron-related defects in silicon, and to other group-IV hosts to a lesser degree. Investigated defects include interstitial and substitutional iron, iron-boron pairs, iron-vacancy and iron-divacancy. We find that in general, agreement between the calculations and Mössbauer data is within a 10% error bar. Nonetheless, we show that the methodology can be used to make accurate assignments, including to separate peaks of similar defects in slightly different environments.
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Submitted 3 May, 2016; v1 submitted 28 April, 2016;
originally announced April 2016.
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SiGe Raman spectra vs. local clustering/anticlustering : Percolation scheme and ab initio calculations
Authors:
Olivier Pages,
Rami Hajj Hussein,
Vitor J. B. Torres
Abstract:
We formalize within the percolation scheme, that operates along the linear chain approximation, namely at one dimension (1D), an intrinsic ability behind Raman scattering to achieve a quantitative insight into local clustering or anticlustering in an alloy, using SiGe as a case study. For doing so, we derive general expressions of the individual fractions of the six SiGe percolation-type oscillato…
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We formalize within the percolation scheme, that operates along the linear chain approximation, namely at one dimension (1D), an intrinsic ability behind Raman scattering to achieve a quantitative insight into local clustering or anticlustering in an alloy, using SiGe as a case study. For doing so, we derive general expressions of the individual fractions of the six SiGe percolation-type oscillators [1(Ge-Ge), 3(Si-Ge), 2(Si-Si)], which monitor directly the Raman intensities, via a relevant order parameter k. This is introduced by adapting to the 1D oscillators of the SiGe diamond version of the 1D percolation scheme, namely along a fully consistent 1D treatment, the approach originally used by Verleur and Barker for the three-dimensional (3D) oscillators of their 1D cluster scheme applying to zincblende alloys [H.W. Verleur and A.S. Barker, Phys. Rev. 149, 715 (1966)], a somehow problematic one in fact, due to its 3D vs. 1D ambivalence. Predictive k-dependent intensity interplays between the SiGe (50 at.%Si) Raman lines are confronted with existing experimental data and with ab initio Raman spectra obtained by using large (32 atom) disordered supercells matching the required k values, with special attention to the Si-Ge triplet and to the Si-Si doublet, respectively.
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Submitted 30 April, 2013;
originally announced April 2013.
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Re-examination of the SiGe Raman spectra - Linear chain approximation and ab initio calculations
Authors:
O. Pagès,
J. Souhabi,
V. J. B. Torres,
A. V. Postnikov,
K. C. Rustagi
Abstract:
We propose a (three-dimension) -> (one-dimension) shift of paradigm for basic understanding of Raman spectra of random Si-Ge. Fair contour modeling of Raman spectra is achieved along the linear chain approximation via 1D-cluster version of the phenomenological Percolation scheme, originally developed for zincblende alloys, after ab initio calibration of the intrinsic Si-Si, Ge-Ge and Si-Ge Raman e…
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We propose a (three-dimension) -> (one-dimension) shift of paradigm for basic understanding of Raman spectra of random Si-Ge. Fair contour modeling of Raman spectra is achieved along the linear chain approximation via 1D-cluster version of the phenomenological Percolation scheme, originally developed for zincblende alloys, after ab initio calibration of the intrinsic Si-Si, Ge-Ge and Si-Ge Raman efficiencies. The 1D-cluster scheme introduces a seven-oscillator [1x(Ge-Ge), 4x(Si-Ge), 2x(Si-Si)] Raman behavior for SiGe, which considerably deviates from the currently admitted six-oscillator [1x(Ge-Ge), 1x(Si-Ge), 4x(Si-Si)] one. The 1D-cluster re-assignment of Raman lines is based on remarkable intensity-interplays with composition, known from the literature, but so far not properly understood. It is independently supported by ab initio calculation of the frequencies of bond-stretching modes along prototype impurity motifs taken as quasi-linear. Different numbers of Raman modes per bond indicate different sensitivities to the local environment of the Ge-Ge (insensitive), Si-Si (sensitive to 1st neighbors) and Si-Ge (sensitive to 2nd neighbors) bond-stretchings. Last, we compare the SiGe Percolation scheme with the current version for zincblende alloys, using GaAsP as a natural reference. The SiGe vs. GaAsP comparison is supported by ab initio calculation of local lattice relaxation/dynamics related to prototype impurity motifs that are directly transposable to the two crystal structures.
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Submitted 9 November, 2011; v1 submitted 29 September, 2011;
originally announced September 2011.
