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Development of TiN/AlN-based superconducting qubit components
Authors:
Benedikt Schoof,
Moritz Singer,
Simon Lang,
Harsh Gupta,
Daniela Zahn,
Johannes Weber,
Marc Tornow
Abstract:
This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), ato…
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This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiN / AlN / TiN junctions yielded values ranging from 150 $μ$A to 2 $μ$A, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.
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Submitted 11 September, 2024;
originally announced September 2024.
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Tantalum thin films sputtered on silicon and on different seed layers: material characterization and coplanar waveguide resonator performance
Authors:
Moritz Singer,
Benedikt Schoof,
Harsh Gupta,
Daniela Zahn,
Johannes Weber,
Marc Tornow
Abstract:
Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with pot…
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Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AlN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600°C) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors $Q_i$ reaching 1 x $10^6$ in the single-photon regime, measured at $T=100 {\space \rm mK}$.
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Submitted 9 September, 2024;
originally announced September 2024.
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Mono-exponential Current Attenuation with Distance across 16 nm Thick Bacteriorhodopsin Multilayers
Authors:
Domenikos Chryssikos,
Jerry A. Fereiro,
Jonathan Rojas,
Sudipta Bera,
Defne Tüzün,
Evanthia Kounoupioti,
Rui N. Pereira,
Christian Pfeiffer,
Ali Khoshouei,
Hendrik Dietz,
Mordechai Sheves,
David Cahen,
Marc Tornow
Abstract:
The remarkable ability of natural proteins to conduct electricity in the dry state over long distances remains largely inexplicable despite intensive research. In some cases, a (weakly) exponential length-attenuation, as in off-resonant tunneling transport, extends to thicknesses even beyond 10 nm. This report deals with such charge transport characteristics observed in self-assembled multilayers…
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The remarkable ability of natural proteins to conduct electricity in the dry state over long distances remains largely inexplicable despite intensive research. In some cases, a (weakly) exponential length-attenuation, as in off-resonant tunneling transport, extends to thicknesses even beyond 10 nm. This report deals with such charge transport characteristics observed in self-assembled multilayers of the protein bacteriorhodopsin (bR). About 7.5 nm to 15.5 nm thick bR layers were prepared on conductive titanium nitride (TiN) substrates using aminohexylphosphonic acid and poly-diallyl-dimethylammonium electrostatic linkers. Using conical EGaIn top contacts, an intriguing, mono-exponential conductance attenuation as a function of the bR layer thickness with a small attenuation coefficient $β\approx 0.8 \space {\rm nm}^{-1}$ is measured at zero bias. Variable-temperature measurements using evaporated Ti/Au top contacts yield effective energy barriers of about 100 meV from fitting the data to tunneling, hopping, and carrier cascade transport models. The observed temperature-dependence is assigned to the protein-electrode interfaces. The transport length and temperature dependence of the current densities are consistent with tunneling through the protein-protein and protein-electrode interfaces, respectively. Importantly, our results call for new theoretical approaches to find the microscopic mechanism behind the remarkably efficient, long-range electron transport within bR.
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Submitted 17 August, 2024;
originally announced August 2024.
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Current rectification via Photosystem I monolayers induced by their orientation on hydrophilic self-assembled monolayers on titanium nitride
Authors:
Jonathan Rojas,
Zhe Wang,
Feng Liu,
Jerry A. Fereiro,
Domenikos Chryssikos,
Thomas Dittrich,
Dario Leister,
David Cahen,
Marc Tornow
Abstract:
Photosystem I (PSI) is a photosynthetic protein which evolved to efficiently transfer electrons through the thylakoid membrane. This remarkable process attracted the attention of the biomolecular electronics community, which aims to study and understand the underlying electronic transport through these proteins by contacting ensembles of PSI with solid-state metallic contacts. This paper extends p…
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Photosystem I (PSI) is a photosynthetic protein which evolved to efficiently transfer electrons through the thylakoid membrane. This remarkable process attracted the attention of the biomolecular electronics community, which aims to study and understand the underlying electronic transport through these proteins by contacting ensembles of PSI with solid-state metallic contacts. This paper extends published work of immobilizing monolayers of PSI with a specific orientation, by using organophosphonate self-assembled molecules with hydrophilic heads on ultra-flat titanium nitride. Electrical measurements carried out with eutectic GaIn top contacts showed current rectification ratios of up to ~200. The previously proposed rectification mechanism, relying on the protein's internal electric dipole, was inquired by measuring shifts in the work function. Our straightforward bottom-up fabrication method may allow for further experimental studies on PSI molecules, such as embedding them in solid-state, transparent top contact schemes for optoelectronic measurements.
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Submitted 17 August, 2024;
originally announced August 2024.
