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Click chemistry in ultra-high vacuum - tetrazine coupling with methyl enol ether covalently linked to Si(001)
Authors:
T. Glaser,
J. Meinecke,
L. Freund,
C. Länger,
J. -N. Luy,
R. Tonner,
U. Koert,
M. Dürr
Abstract:
The additive-free tetrazine/enol ether click reaction was performed in ultra-high vacuum (UHV) with an enol ether group covalently linked to a silicon surface: Dimethyl 1,2,4,5-tetrazine-3,6-dicarboxylate molecules were coupled to the enol ether group of a functionalized cyclooctyne which was adsorbed on the silicon (001) surface via the strained triple bond of cyclooctyne. The reaction was observ…
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The additive-free tetrazine/enol ether click reaction was performed in ultra-high vacuum (UHV) with an enol ether group covalently linked to a silicon surface: Dimethyl 1,2,4,5-tetrazine-3,6-dicarboxylate molecules were coupled to the enol ether group of a functionalized cyclooctyne which was adsorbed on the silicon (001) surface via the strained triple bond of cyclooctyne. The reaction was observed at a surface temperature of 380 K by means of X-ray photoelectron spectroscopy (XPS). No indications for tetrazine molecules which bind directly to the Si(001) surface via the nitrogen atoms were detected. A moderate energy barrier was deduced for this click reaction in vacuum by means of density functional theory based calculations, in good agreement with the experimental results. This UHV-compatible click reaction thus opens a new, flexible route for synthesizing covalently bound organic architectures.
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Submitted 4 December, 2020;
originally announced December 2020.
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Understanding the correlation between electronic coupling and energetic stability of molecular crystal polymorphs: The instructive case of quinacridone
Authors:
Christian Winkler,
Andreas Jeindl,
Florian Mayer,
Oliver T. Hofmann,
Ralf Tonner,
Egbert Zojer
Abstract:
A crucial factor determining charge transport in organic semiconductors is the electronic coupling between the molecular constituents, which is heavily influenced by the relative arrangement of the molecules. This renders quinacridone, with its multiple, structurally fundamentally different polymorphs and their diverse intermolecular interactions an ideal test case for analyzing the correlation be…
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A crucial factor determining charge transport in organic semiconductors is the electronic coupling between the molecular constituents, which is heavily influenced by the relative arrangement of the molecules. This renders quinacridone, with its multiple, structurally fundamentally different polymorphs and their diverse intermolecular interactions an ideal test case for analyzing the correlation between the electronic coupling in a specific configuration and the configuration's energetic stability. To provide an in-depth analysis of this correlation, starting from the $α$-polymorph of quinacridone, we also construct a coplanar model crystal. This allows us to systematically compare the displacement-dependence of the electronic coupling with that of the total energy. In this way, we identify the combination of Pauli repulsion and orbital rehybridization as the driving force steering the system towards a structure in which the electronic coupling is minimal (especially for the valence band and at small displacements). The general nature of these observations is supported by equivalent trends for an analogous pentacene model system. This underlines that the design of high-performance materials cannot rely on the "natural" assembly of the $π$-conjugated backbones of organic semiconductors into their most stable configurations. Rather, it must include the incorporation of functional groups that steer crystal packing towards more favorable structures, where aiming for short-axis displacements or realizing comparably large long-axis displacements appear as strategies worthwhile exploring.
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Submitted 5 August, 2019; v1 submitted 17 May, 2019;
originally announced May 2019.
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Structure and vibrational properties of the PTCDA/Ag(111) interface: Bilayer vs. monolayer
Authors:
N. L. Zaitsev,
P. Jakob,
R. Tonner
Abstract:
The structural and vibrational properties of metal-organic interfaces have been examined by means of infrared (IR) absorption spectroscopy and density functional theory (DFT) with an approach accounting for long-range dispersive interactions. We focus on a comparative study of the PTCDA monolayer and bilayer on Ag(111). The equilibrium geometry at the molecule-metal interface and the infrared spec…
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The structural and vibrational properties of metal-organic interfaces have been examined by means of infrared (IR) absorption spectroscopy and density functional theory (DFT) with an approach accounting for long-range dispersive interactions. We focus on a comparative study of the PTCDA monolayer and bilayer on Ag(111). The equilibrium geometry at the molecule-metal interface and the infrared spectrum of the chemisorbed monolayer of PTCDA on Ag(111) are well described by the computations. In the bilayer structure, the presence of a physisorbed adlayer on top of PTCDA/Ag(111) presents a challenge for DFT. As previously described for other systems, the polarization of the substrate is not captured correctly and results in too low energies of frontier molecular orbitals. This results in an apparent contribution from the vibrations of second-layer PTCDA to the IR spectrum from interfacial dynamical charge transfer processes. After removing these peaks with artificially strong intensity, calculated and experimental data show good agreement and the IR spectrum can be described as the sum of the spectra of the PTCDA/Ag(111) contact layer and a physisorbed PTCDA monolayer on top.
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Submitted 23 January, 2018;
originally announced January 2018.
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Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
Authors:
Phil Rosenow,
Lars C. Bannow,
Eric W. Fischer,
Wolfgang Stolz,
Kerstin Volz,
Stephan W. Koch,
Ralf Tonner
Abstract:
While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calcul…
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While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches. The root of this lies in the strong distortion N atoms exert on most host materials. Here, we resolve these issues by combining density functional theory calculations based on the meta-GGA functional presented by Tran and Blaha (TB09) with a supercell approach for the dilute nitride Ga(NAs). Exploring the requirements posed to supercells, we show that the distortion field of a single N atom must be allowed to decrease so far, that it does not overlap with its periodic images. This also prevents spurious electronic interactions between translational symmetric atoms, allowing to compute band gaps in very good agreement with experimentally derived reference values. These results open up the field of dilute nitride compound semiconductors to predictive ab initio calculations.
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Submitted 30 May, 2017;
originally announced May 2017.
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An ab initio based approach to optical properties of semiconductor heterostructures
Authors:
L. C. Bannow,
P. Rosenow,
P. Springer,
E. W. Fischer,
J. Hader,
J. V. Moloney,
R. Tonner,
S. W. Koch
Abstract:
A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function…
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A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well using the kp-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger parameters derived from band structures computed with the TB09 density functional reproduce extrapolated values. The procedure is illustrated by computing the absorption spectra for a (AlGa)As/Ga(AsP)/(AlGa)As quantum well system with varying phosphide content in the active layer.
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Submitted 4 April, 2017;
originally announced April 2017.
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Adsorption geometry and the interface states: The relaxed and compressed phases of NTCDA/Ag(111)
Authors:
P. Jakob,
N. L. Zaitsev,
A. Namgalies,
R. Tonner,
I. A. Nechaev,
F. S. Tautz,
U. Höfer,
D. Sanchez-Portal
Abstract:
The theoretical modelling of metal-organic interfaces represents a formidable challenge, especially in consideration of the delicate balance of various interaction mechanisms and the large size of involved molecular species. In the present study, the energies of interface states, which are known to display a high sensitivity to the adsorption geometry and electronic structure of the deposited mole…
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The theoretical modelling of metal-organic interfaces represents a formidable challenge, especially in consideration of the delicate balance of various interaction mechanisms and the large size of involved molecular species. In the present study, the energies of interface states, which are known to display a high sensitivity to the adsorption geometry and electronic structure of the deposited molecular species, have been used to test the suitability and reliability of current theoretical approaches. Two well-ordered overlayer structures (relaxed and compressed monolayer) of NTCDA on Ag(111) have been investigated using two-photon-photoemission to derive precise interface state energies for these closely related systems. The experimental values are reproduced by our DFT calculations using different treatments of dispersion interactions (optB88, PBE-D3) and basis set approaches (localized numerical atomic orbitals, plane waves) with remarkable accuracy. This underlines the trustworthiness regarding the description of geometric and electronic properties.
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Submitted 9 September, 2016; v1 submitted 3 August, 2016;
originally announced August 2016.
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Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches
Authors:
Phil Rosenow,
Ralf Tonner
Abstract:
The extent of hydrogen coverage of the Si(001)c(4x2) surface in the presence of hydrogen gas has been studied with dispersion corrected density functional theory. Electronic energy contributions are well described using a hybrid functional. The temperature dependence of the coverage in thermodynamic equilibrium was studied computing the phonon spectrum in a supercell approach. As an approximation…
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The extent of hydrogen coverage of the Si(001)c(4x2) surface in the presence of hydrogen gas has been studied with dispersion corrected density functional theory. Electronic energy contributions are well described using a hybrid functional. The temperature dependence of the coverage in thermodynamic equilibrium was studied computing the phonon spectrum in a supercell approach. As an approximation to these demanding computations, an interpolated phonon approach was found to give comparable accuracy. The simpler ab initio thermodynamic approach is not accurate enough for the system studied, even if corrections by the Einstein model for surface vibrations are considered. The on-set of H2 desorption from the fully hydrogenated surface is predicted to occur at temperatures around 750 K. Strong changes in hydrogen coverage are found between 1000 and 1200 K in good agreement with previous reflectance anisotropy spectroscopy experiments. These findings allow a rational choice for the surface state in the computational treatment of chemical reactions under typical metal organic vapor phase epitaxy conditions on Si(001).
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Submitted 10 March, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
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Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys
Authors:
Lars C. Bannow,
Oleg Rubel,
Phil Rosenow,
Stefan C. Badescu,
Jorg Hader,
Jerome V. Moloney,
Ralf Tonner,
Stephan W. Koch
Abstract:
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This de…
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Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This dependence breaks down at high concentrations where empirical models accounting only for the As-Bi interaction are not applicable. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.
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Submitted 5 February, 2016;
originally announced February 2016.
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Inelastic Decay of Electrons in the Shockley-type Metal-Organic Interface States
Authors:
S. S. Tsirkin,
N. L. Zaitsev,
I. A. Nechaev,
R. Tonner,
U. Hoefer,
E. V. Chulkov
Abstract:
We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer depo…
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We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer deposition plays a minor role in the phase space for electron decay, and hence weakly affects the resulting lifetimes. The presence of the unoccupied molecular states below the IS gives a small contribution to the IS decay rate mostly determined by the change of the phase space of bulk states upon the energy shift of the IS. The calculated lifetimes follow the experimentally observed trends. In particular, we explain the trend of the unusual increase of the IS lifetimes with rising temperature.
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Submitted 27 July, 2015;
originally announced July 2015.
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Electron-Vibron Coupling at Metal-Organic Interfaces from Theory and Experiment
Authors:
Phil Rosenow,
Peter Jakob,
Ralf Tonner
Abstract:
We study the significance and characteristics of interfacial dynamical charge transfer at metal-organic interfaces for the organic semiconductor model system 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA) on Ag(111) quantitatively. We combine infrared absorption spectroscopy and dispersion-corrected density functional theory calculations to analyze dynamic dipole moments and electron-vibr…
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We study the significance and characteristics of interfacial dynamical charge transfer at metal-organic interfaces for the organic semiconductor model system 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA) on Ag(111) quantitatively. We combine infrared absorption spectroscopy and dispersion-corrected density functional theory calculations to analyze dynamic dipole moments and electron-vibron coupling at the interface. We demonstrate that interfacial dynamical charge transfer is the dominant cause of infrared activity in these systems and that it correlates with results from partial charge and density of states analysis. Nuclear motion generates an additional dynamic dipole moment but represents a minor effect except for modes with significant out-of-plane amplitudes.
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Submitted 10 February, 2016; v1 submitted 15 March, 2015;
originally announced March 2015.
